G3VM-6芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号G3VM-6的Datasheet PDF文件预览

T^MOe^{S F}c^ETh^Ren^layi^scal Information

Introduction

New models with a wider range of characteristics provide an array of

solutions, meeting the needs of today’s high performance applications

The built-in Current Limit Function (CLR models) has many uses.

Traditionally used to clamp excessive over current fault conditions in

telecom equipment, this feature can also be used to good effect to

resist transient and short circuit conditions.

Our expanded range of MOS FET relays, Type G3VM, sets the

benchmark in Solid State Relays (SSRs). Products are manufactured

using the latest advances in automated production and include a

variety of improved construction technologies within the areas of the

input LED, PDA (Photo Diode Array used as a photocoupler) and

MOS FET chips used in the load switching circuit. As a result, further

reductions in package size and power requirements have been

achieved.

MOS FET relays are the ideal data and telecommunication solution

for line seizing, line switching, hook switching, Data Access Arrange-

ment (DAA) function, line transformer circuit control and other feature

phone functions. Central office applications require high reliability

and long life. Here the G3VM is ideal for use in the areas of Sub-

scriber Line Interfaces (SLICs) Multiplexers and Routers. In addition,

Local Area Networks (LANs) and Network Termination Units (NTUs)

including Set-Top Boxes (STBs) and Remote Metering Systems

(RMS) can take advantage of the G3VMs’ small size and low ON

resistance.

Combining the advantages of mechanical and solid state technology,

the new G3VM range gives you unprecedented capability to design.

All models featured include a double MOS FET load circuit, enabling

the designer complete versatility since it makes no difference

whether an AC or DC load in either direction is connected (Connec-

tion A). Thus, the MOS FET relay is a fully functional alternative to an

electromechanical relay with minimal additional drive circuitry.

Advances in performance and cost reduction enable MOS FET

relays to be considered as good alternatives to Reed Relays in appli-

cation areas such as security motion detectors (standard and anti-

mask PIRs), and Automated Test Equipment (ATE) probe cards.

Glossary

Term

Symbol

Description

LED forward current

I_F

Rated current that can flow continuously in the forward direction of the LED

Repetitive peak LED forward

current

I_FP

Rated current that can flow momentarily in the forward direction of the LED

LED forward current

reduction rate

<I_F/°C

Rated change of forward current flowing through the LED relative to ambient temperature above 25°C

LED reverse voltage

V_R

T_J

V_OFF

I_O

Rated reverse voltage that can be applied between the anode and the cathode

Connection temperature

Load voltage (AC peak / DC)

Continuous load current

ON current reduction rate

Rated temperature that can be allowed in the junction of the LED, Photodetector or MOS FET(s)

Rated voltage that can be applied between the MOS FET's output terminals in the OFF state

Rated current that can flow between the MOS FET's output terminals in the ON state

<I_ON/°C Rated change of load current flowing between MOS FET(s) output terminals relative to ambient tem-

perature above 25°C

Dielectric strength between

input and output

V_I-O

Isolation voltage between input and output terminals for a specified time

Operating temperature

T_a

T_stg

V_F

I_R

Ambient temperature range in which the relay may be operated without impairment

Ambient temperature range in which the relay may be stored while not operating

Voltage drop between the LED's anode and cathode at a certain forward current

Leakage current flowing in the LED's reverse direction (between cathode and anode)

Electrostatic capacitance between the anode and the cathode terminals of the LED

Storage temperature

LED forward voltage

LED reverse current

Capacity between (LED)

terminals

C_T

Trigger LED forward current

Maximum resistance with

output ON

I_FT

R_ON

Minimum value of input current necessary to put the output MOS FET(s) in to the ON state

Resistance between the MOS FET's output terminals specified with reference to ON state current

Current leakage when the

relay is open

I_LEAK

Leakage current flowing between the MOS FET's output terminals in the OFF state

Output Capacitance

Capacity between I/O

terminals

C_off

C_I-O

Electrostatic capacitance between the output terminals in the OFF state

Electrostatic capacitance between the input and output terminals of the relay

Insulation resistance

Turn-ON time

R_I-O

t_ON

Resistance between the input and output terminals at the specified voltage value

Time required for the output waveform to change from 0 (100%) to 90 (10%) after input goes from OFF

to ON state

Turn-OFF time

t_OFF

V_DD

Time required for the output waveform to change from 0 (100%) to 90 (10%) after input goes from ON

to OFF state

Rated load voltage that can be applied between the MOS FET's output terminals

Recommended Load Voltage

(AC peak / DC)

MOS FET Relays Technical Information

Precautions

Typical Relay Driving Circuit Examples

!WARNING

C-MOS

Be sure to turn OFF the power when wiring the Relay, otherwise

an electric shock may be received.

Load

!WARNING

Do not touch the charged terminals of the SSR, otherwise an elec-

tric shock may be received.

!CAUTION

Do not apply overvoltage or overcurrent to the I/O circuits of the

SSR, otherwise the SSR may malfunction or burn.

!CAUTION

Be sure to wire and solder the Relay under the proper soldering

conditions, otherwise the Relay in operation may generate exces-

sive heat and the Relay may burn.

Transistor

Load

10 to 100 kΩ

!CAUTION

Electrostatic sensitive devices. Keep in original packaging until re-

quired to use. Avoid touching device terminals. Take static han-

dling precautions during processing.

Use the following formula to obtain the LED current limiting resis-

tance value to assure that the relay operates accurately.

Appearance Examples

DIP (Dual Inline Package)

CC − VOL − V (ON)

R1 =

5 to 20 mA

OMRON logo

Model name

Use the following formula to obtain the LED forward voltage value to

assure that the relay releases accurately.

LOT No.

VF (OFF) = VCC − VOH < 0.8 V

SOP (Small Outline Package)

OMRON logo

Model name

■

Protection from Surge Voltage on the

Input Terminals

LOT No.

SSOP (Shrink Small Outline Package)

If any reversed surge voltage is imposed on the input terminals,

insert a diode in parallel to the input terminals as shown in the follow-

ing circuit diagram and do not impose a reversed voltage value of 3 V

or more.

211

Model name

OMRON mark

228

LOT No.

Surge Voltage Protection Circuit Example

Note: "G3VM" is not printed on the

actual product.

MOS FET Relays Technical Information

■

Protection from Spike Voltage on the

Output Terminals

■ Load Connection

Do not short-circuit the input and output terminals while the relay is

operating or the relay may malfunction.

If a spike voltage exceeding the absolute maximum rated value is

generated between the output terminals, insert a C-R snubber or

clamping diode in parallel to the load as shown in the following circuit

diagram to limit the spike voltage.

AC Connection

Or:

Load

−

Spike Voltage Protection Circuit Example

DC Single Connection

Load

−

Load

DC Parallel Connection

■

Unused Terminals (6-pin models only)

Load

Terminal 3 is connected to the internal circuit. Do not connect any-

thing to terminal 3 externally.

−

■

Pin Strength for Automatic Mounting

In order to maintain the characteristics of the relay, the force imposed

on any pin of the relay for automatic mounting must not exceed the

following.

In direction A: 1.96 N

In direction B: 1.96 N

Guidelines for Mounting Devices on PCBs

■ Cleaning

When ions in the flux enter into the product during soldering, fluctua-

tion in device performance or corrosion may occur. Be sure to wash

away any flux residue which contains Cl or Na ions.

Recommended conditions for standard ultrasonic cleaning

Frequency:

Output:

Time:

27kHz to 29kHz

0.25 W/cm²or less

30 seconds or less

The following types of solvents are recommended for cleaning the

flux:

Temperature: 50°C (may vary according to the type of solvent used)

• Asahi Clean AK-225AES

• Kao Cleanthru 750H

• Pine-Alpha ST-100S

Cleaning must be conducted with the printed circuit board or device

floating on the solvent, so as to avoid direct contact between the PCB

or device and the ultrasonic vibrator.

Cleaning Conditions

Handling Precautions

Cleaning conditions and precautions may vary according to product

specifications.

Do not touch the device’s mark-bearing surface with your hand or

with a brush while cleaning or applying cleaning liquid to the device.

This may erase device markings. It is important to confirm that nei-

ther the solvent used for cleaning nor the cleaning conditions will

damage the device package.

General precautions for dip cleaning

Dipping time varies according to the solvent used.

However, as a general guideline, it is recommended that the dip

time be limited to three minutes.

General precautions for ultrasonic cleaning

When ultrasonic cleaning is conducted for an excessively long

time, contact between the product resin and the metal leads may

lessen. Also, excessive ultrasonic stress may cause cracks in the

pellet.

It is recommended that the applied stress be minimized.

MOS FET Relays Technical Information

■ Solder Mounting

Perform solder mounting under the following recommended conditions

to prevent the temperature of the relays from rising, causing possible

damage to the relays.

SSOP Handling Precautions

Humidity-resistant Packaging

Component cases can crack if surface-mounted components that

have absorbed moisture are subjected to thermal stress when

mounting. To prevent this, observe the following precautions.

Flow Soldering

1. Unopened components can be stored in the packaging at

5 to 30°C and a humidity of 90% max. However, they should

be used within 12 months.

2. After the packaging has been opened, components can be

stored at 5 to 30°C and a humidity of 70% max. However, they

should be mounted within 168 hours.

3. If, after opening the packaging, the humidity indicator turns

pink to the 30% mark or the expiration date is exceeded, then

bake the components while they are still on the taping reel

and use them within 72 hours. Do not bake the same compo-

nents more than once.

Through Hole Packages (Once only)

Solder type

Preheating

Temperature

Solder

Temperature

Lead solder

(SnPb)

150°C,

60 to 120s

260°C,

10s max.

Lead-free solder 150°C,

(SnAgCu)

260°C,

10s max.

60 to 120s

Note: It is recommended that the suitability of solder mounting be

verified under actual conditions

Baking conditions: 60 ± 5°C, 64 to 72 hours

4. If the same components are baked repeatedly, then the tape

detachment strength will change, causing potential problems

when mounting. Use caution when mounting under these

conditions.

5. When mounting using dehumidifying measures, always take

countermeasures against component damage from static

electricity.

Reflow Soldering

Surface Mount Packages (Twice max.)

Solder type

Preheating

Temperature*

Soldering

Temperature*

6. Do not throw or drop the components. If the laminated pack-

Lead solder

(SnPb)

140 to 160°C,

60 to 120s

210°C,

Peak,

240°C max.

aging material is damaged, airtightness will be lost.

30s max.

7. Tape cut SSOP’s are packaged without humidity resistance.

Lead-free solder 180 to 190°C,

(SnAgCu)

230°C,

Peak,

260°C max.

Use manual soldering to mount them.

60 to 120s

30 to 50s

*Measured from the top surface of the relay package

Note: 1. It is recommended that the suitability of solder mounting be

verified under actual conditions

2. Tape cut SSOP’s are packaged without humidity resistance.

Use manual soldering to mount them.

Manual Soldering (Once only)

Manually solder at 350°C for 3s or less or at 260°C for 10s or less.

MOS FET Relays Technical Information

MEMO

All sales are subject to Omron Electronic Components LLC standard terms and conditions of sale, which

can be found at http://www.components.omron.com/components/web/webfiles.nsf/sales_terms.html

ALL DIMENSIONS SHOWN ARE IN MILLIMETERS.

To convert millimeters into inches, multiply by 0.03937. To convert grams into ounces, multiply by 0.03527.

OMRON ON-LINE

Global - http://www.omron.com

USA - http://www.components.omron.com

OMRON ELECTRONIC

COMPONENTS LLC

55 E. Commerce Drive, Suite B

Schaumburg, IL 60173

847-882-2288

12/10

Specifications subject to change without notice

Printed in USA

Cat. No. X302-E-1

MOS FET Relays Technical Information

配单直通车

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G3VM-6-S产品参数

型号:	G3VM-6-S
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	OMRON CORP
Reach Compliance Code：	unknown
HTS代码：	8541.40.95.00
风险等级：	5.84
配置：	SINGLE
最大正向电流：	0.025 A
最大绝缘电压：	10000 V
元件数量：	1
最大通态电流：	0.12 A
最大通态电阻：	12 Ω
最高工作温度：	80 °C
最低工作温度：	-20 °C
光电设备类型：	TRANSISTOR OUTPUT SSR
Base Number Matches：	1

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