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产品型号GBU8J-E3/51的概述

芯片GBU8J-E3/51概述 GBU8J-E3/51是一种广泛应用于电力电子领域的整流二极管，专门设计用于提高电源电路的效率和稳定性。其作为一种通用的整流器件，在多个电子设备中扮演着至关重要的角色，尤其是在直流电源转换和高频电源电路中。GBU8J-E3/51凭借其良好的热管理性能和优越的电气特性，成为许多工程师解决电流处理问题的首选组件。芯片GBU8J-E3/51的详细参数 GBU8J-E3/51的技术参数制定了其在各种应用场景中的适配性。以下是其主要参数： - 最大反向电压（VR）：最高可达800V，这使得其能够在高压应用中表现出色。 - 正向电流（IF）：最大值为8A，适合处理中等负荷的应用。 - 正向压降（VF）：在IF=8A时，VF约为1.1V，体现了其较低的能量损耗。 - 脉冲电流（IFSM）：能够承受的脉冲电流可达到200A，提供了抗冲击能力。 - 工作温度范围：芯片可...

产品型号GBU8J-E3/51的Datasheet PDF文件预览

GBU8A thru GBU8M

Vishay General Semiconductor

Glass Passivated Single-Phase Bridge Rectifier

FEATURES

• UL recognition file number E54214

• Ideal for printed circuit boards

• High surge current capability

• High case dielectric strength of 1500 V

• Solder dip 260 °C, 40 s

RMS

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Case Style GBU

TYPICAL APPLICATIONS

General purpose use in ac-to-dc bridge full wave

rectification for monitor, TV, printer, power supply,

switching mode power supply, adapter, audio

equipment and home appliances applications.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: GBU

I_F(AV)

8 A

V_RRM

I_FSM

I_R

50 V to 1000 V

200 A

Epoxy meets UL 94V-0 flammability rating

5 µA

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

V_F

1.0 V

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

T_Jmax.

150 °C

Polarity: As marked on body

Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.

Recommended Torque: 5.7 cm-kg (5 inches-lbs)

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

100

1000

Maximum average forward

rectified output current at

T_C= 60 °C ⁽¹⁾

T_A= 40 °C ⁽²⁾

8.0

3.9

I_F(AV)

Peak forward surge current single sine-wave

super-imposed on rated load

I_FSM

I²t

200

166

Rating for fusing (t < 8.3 ms)

A²s

°C

Operating junction and storage

temperature range

T_J, T_STG

- 55 to + 150

Notes:

(1) Unit case mounted on aIuminum plate heatsink

(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length

Document Number: 88616

Revision: 21-Jan-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

GBU8A thru GBU8M

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M UNIT

Maximum

instantaneous forward

voltage drop per diode

8.0 A

V_F

1.0

Maximum DC reverse

current at rated DC

blocking voltage per diode

_A= 25 °C

_A= 125 °C

5.0

500

I_R

µA

Typical junction

capacitance per diode

4 V, 1 MHz

C_J

211

THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M UNIT

(2)

R_θJA

R_θJC

4.0

Typical thermal resistance

°C/W

(1)(3)

Notes:

(1) Units case mounted on aIuminum plate heatsink

(2) Units mounted in free air, no heatsink on P.C.B., 0.5 x 0.5" (12 x 12 mm) copper pads, 0.375" (9.5 mm) lead length

(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screws

ORDERING INFORMATION

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

Tube

GBU8J-E3/45

3.857

GBU8J-E3/51

3.857

250

Paper tray

RATINGS AND CHARACTERISTICS CURVES

(T = 25 °C unless otherwise noted)

250

200

150

100

8.0

T_J= 150 °C

8.3 ms Single Half Sine-Wave

Heatsink Mounting, T_C

6.0

4.0

2.0

P.C.B. Mounting, T_A

0.47 x 0.47" (12 x 12 mm) Copper

Pads 0.375" (9.5 mm) Lead Length

60 Hz Resistive or Inductive Load

100

125

150

Number of Cycles at 60 Hz

Temperature (°C)

Figure 1. Derating Curve Output Rectified Current

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88616

Revision: 21-Jan-08

GBU8A thru GBU8M

Vishay General Semiconductor

100

1000

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mVp-p

0.1

T_J= 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

50 - 400 V

600 - 1000 V

0.01

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.1

Reverse Voltage (V)

100

Instantaneous Forward Voltage (V)

Figure 3. Typical Forward Characteristics Per Diode

Figure 5. Typical Junction Capacitance Per Diode

1000

100

T_J= 150 °C

100

T_J= 125 °C

50 - 400 V

600 - 1000 V

0.1

0.01

T_J= 25 °C

0.1

0.01

0.1

100

Percent of Rated Peak Reverse Voltage (%)

t - Heating Time (s)

Figure 4. Typical Reverse Leakage Characteristics Per Diode

Figure 6. Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Case Type GBU

0.140 (3.56)

0.130 (3.30)

0.880 (22.3)

0.860 (21.8)

0.020 R (TYP.)

0.125 (3.2) x 45°

Chamfer

9° TYP.

0.310 (7.9)

0.290 (7.4)

0.160 (4.1)

0.140 (3.5)

0.740 (18.8)

0.720 (18.3)

0.075

(2.03)

(1.52)

0.080

0.060

0.085 (2.16)

0.065 (1.65)

(1.9)

5° TYP.

0.085 (2.16)

0.710 (18.0)

0.075 (1.90)

0.690 (17.5)

0.100 (2.54)

0.085 (2.16)

0.050 (1.27)

0.040 (1.02)

0.022 (0.56)

0.018 (0.46)

(4.83)

(5.33)

0.080 (2.03)

0.065 (1.65)

0.190

0.210

Polarity shown on front side of case, positive lead by beveled corner

Document Number: 88616

Revision: 21-Jan-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

GBU8J-E3/51相关文章

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GBU8J-E3/51产品参数

型号:	GBU8J-E3/51
是否无铅：	不含铅
生命周期：	Active
IHS 制造商：	VISHAY SEMICONDUCTORS
包装说明：	R-PSFM-T4
针数：	4
制造商包装代码：	CASE GBU
Reach Compliance Code：	unknown
HTS代码：	8541.10.00.80
风险等级：	1.22
其他特性：	UL RECOGNIZED
最小击穿电压：	600 V
外壳连接：	ISOLATED
配置：	BRIDGE, 4 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：	1 V
JESD-30 代码：	R-PSFM-T4
JESD-609代码：	e3
最大非重复峰值正向电流：	200 A
元件数量：	4
相数：	1
端子数量：	4
最高工作温度：	150 °C
最低工作温度：	-55 °C
最大输出电流：	3.9 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT APPLICABLE
认证状态：	Not Qualified
最大重复峰值反向电压：	600 V
子类别：	Bridge Rectifier Diodes
表面贴装：	NO
端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT APPLICABLE
Base Number Matches：	1

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