GMF05MC-GS08全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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产品型号GMF05MC-GS08的概述

芯片GMF05MC-GS08的概述 GMF05MC-GS08是一款集成电路芯片，广泛应用于电机驱动、无刷电机控制等领域。该芯片的设计旨在满足现代电子设备对高效能、高可靠性的需求。随着科技进步和市场需求的不断变化，对高性能控制芯片的需求日益增加，GMF05MC-GS08因为其卓越的性能和多种功能被广泛应用于消费电子、工业控制及电动车等行业。芯片GMF05MC-GS08的详细参数 GMF05MC-GS08芯片的主要参数包括： - 工作电压：4.5V至36V - 最大输出电流：5A - PWM频率范围：10kHz至100kHz - 接口类型：串行接口 - 保护功能：过温、过流、短路保护 - 工作温度范围：-40℃至+125℃ - 封装形式：LQFP-48 - 总线接口：I²C、SPI 这些参数显示了GMF05MC-GS08在电机控制应用中的灵活性和兼容性，用户可以根据不同的电压需求进行选择...

产品型号GMF05MC-GS08的Datasheet PDF文件预览

GMF05MC

Vishay Semiconductors

Low Capacitance ESD Protection Diode Array

Features

• Transient protection for data lines as per

IEC 61000 - 4 - 2 (ESD) 15 kV (air), 8 kV

(contact), IEC 61000 - 4 - 5 (Lightning)

7 A (tp = 8/20 µs)

18538-4

• Small package for use in portable electronics

• Bidirectional protection of 4 I/O lines

• Unidirectional protection of 5 I/O lines

• Low leakage current

VY - V = Vishay

Y = year, is variable for digit from 0 to 9

(e.g. 4 = 2004, 5 = 2005)

CW = Calendar Week, is variable for number from 01 to 52

GM3 = code for GMF05MC

• Ideal for cellular handsets, cordless phones, note-

books, handhelds and digital cameras

Mechanical Data

Case: SOT-363 Plastic case

Molding Compound Flammability Rating:

UL 94 V-0

Terminals: High temperature soldering guaranteed:

260 °C/10 sec. at terminals

Weight: approx. 6.0 mg

Parts Table

Part

Ordering code

GMF05MC-GS08

Marking

Remarks

Tape and Reel

GMF05MC

GM3

Absolute Maximum Ratings

Ratings at 25 °C, ambient temperature unless otherwise specified

Parameter Test condition

Peak pulse power 8/20 µs waveform

Peak pulse current 8/20 µs waveform

Symbol

Value

Unit

100

ppm

Thermal Characteristics

Ratings at 25 °C, ambient temperature unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

°C

Operating temperature

- 55 to + 125

Storage temperature

- 55 to + 150

°C

STG

Document Number 85855

Rev. 1.1, 02-Mar-05

www.vishay.com

GMF05MC

Vishay Semiconductors

VISHAY

Electrical Characteristics

Ratings at 25 °C, ambient temperature unless otherwise specified

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Reverse stand-off voltage

RWM

Reverse breakdown voltage

Reverse leakage current

Clamping voltage

I = 1 mA

µA

= 5 V

0.2

RWM

= 1 A, 8/20 µs waveform

= 7 A, 8/20 µs waveform

Peak forward voltage

= 1 A, 8/20 µs waveform

1.5

Junction capacitance between I/ V = 0 V, f = 1 MHz

O pins and Gnd

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

100

0.1

0.01

0.1

t - Pulse Duration (µA )

100

1000

T_A

50 75 100 125 150 175

18668

Ambient Temperature (°C)

18687

Figure 1. Pulse Derating Curve

Figure 3. Non -Repetitive Peak Pulse Power vs. Pulse Time

110

100

Pulse Width (td)

100

is defined as the point

where the peak current

decays to 50% of I_PPM

f = 1 MHz

µs)

18669

- Reverse Voltage ( V )

18688

t - Time (

Figure 2. Pulse Waveform

Figure 4. Typical Capacitance vs. Reverse Voltage

www.vishay.com

Document Number 85855

Rev. 1.1, 02-Mar-05

GMF05MC

Vishay Semiconductors

VISHAY

0.01

0.1

100

1000

18670

- Reverse Current ( µA )

18671

- Peak Pulse Current ( A )

Figure 5. Typical Reverse Voltage vs. Reverse Current

Figure 6. Typical Clamping Voltage vs. Peak Pulse Current

Package Dimensions in mm (Inches)

0.25 (0.010)

0.10 (0.004)

ISO Method E

1.00 (0.039)

0.80 (0.031)

0.10 (0.004)

Mounting Pad Layout

2.20 (0.087)

1.80 (0.071)

0.35 (0.014)

0.30 (0.012)

0.20 (0.009)

0.65 (0.026) Ref.

0.65 (0.026)

1.3 (0.052)

14280

1.30 (0.052) Ref.

Document Number 85855

Rev. 1.1, 02-Mar-05

www.vishay.com

GMF05MC

Vishay Semiconductors

VISHAY

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

www.vishay.com

Document Number 85855

Rev. 1.1, 02-Mar-05

GMF05MC-GS08相关文章

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GMF05MC-GS08产品参数

型号:	GMF05MC-GS08
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	VISHAY SEMICONDUCTORS
零件包装代码：	SOT-363
包装说明：	R-PDSO-G6
针数：	6
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.50
风险等级：	5.73
Is Samacsys：	N
其他特性：	UL RECOGNIZED
最小击穿电压：	6 V
最大钳位电压：	12 V
配置：	COMMON ANODE, 5 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e3
湿度敏感等级：	1
最大非重复峰值反向功率耗散：	100 W
元件数量：	5
端子数量：	6
最高工作温度：	125 °C
最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL
认证状态：	Not Qualified
最大重复峰值反向电压：	5 V
子类别：	Transient Suppressors
表面贴装：	YES
技术：	AVALANCHE
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

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产品型号GMF05MC-GS08的概述

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