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    • 北京元坤伟业科技有限公司

           该会员已使用本站17年以上

    • GP1S093HCZ0F
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    • 深科创（香港）科技有限公司

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    • GP1S093HCZ0F
    • 数量5590 
    • 厂家SHARP/Socle Technology 
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    • GP1S093HCZ0F
    • 数量7536 
    • 厂家Sharp 
    • 封装光电断续器 
    • 批号23+ 
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    • 深圳市毅创腾电子科技有限公司

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    • GP1S093HCZ0F
    • 数量321448 
    • 厂家SHARP特价清货 
    • 封装DIP-4 
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    • GP1S093HCZ0F
    • 数量51000 
    • 厂家一级代理 
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    • GP1S093HCZ0F
    • 数量28771 
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    • GP1S093HCZ0F
    • 数量25548 
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    • 封装DIP4 
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    • 深圳市中杰盛科技有限公司

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    • GP1S093HCZ0F
    • 数量9532 
    • 厂家Sharp 
    • 封装光电断续器 
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    • 深圳市晶美隆科技有限公司

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    • GP1S093HCZ0F
    • 数量16200 
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    • GP1S093HCZ0F
    • 数量9358 
    • 厂家SHARP-夏普 
    • 封装车规-传感器 
    • 批号▉▉：2年内 
    • ▉▉￥5.3元一有问必回一有长期订货一备货HK仓库
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    • GP1S093HCZ0F
    • 数量5190 
    • 厂家Ｓｈａｒｐ 
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    • 原装正品★真实库存★价格优势★欢迎来电洽谈
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    • 数量865000 
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    • 深圳市华斯顿电子科技有限公司

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    • GP1S093HCZ0F
    • 数量13500 
    • 厂家FGC MISCELLANEOUS 
    • 封装100 
    • 批号2023+ 
    • 绝对原装正品现货/优势渠道商、原盘原包原盒
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    • GP1S093HCZ0F
    • 数量12600 
    • 厂家GUANGPUYUAN 
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    • 深圳市昌和盛利电子有限公司

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    • 数量26000 
    • 厂家SHARP 
    • 封装原装正品 
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    • 深圳市拓亿芯电子有限公司

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    • 数量30000 
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    • GP1S093HCZ0F
    • 数量12500 
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    • 深圳市诚达吉电子有限公司

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    • GP1S093HCZ0F
    • 数量11941 
    • 厂家SHARP 
    • 封装DIP-4 
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    • GP1S093HCZ0F
    • 数量38500 
    • 厂家SHARP 
    • 封装DIP-4 
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    • GP1S093HCZ0F
    • 数量6500000 
    • 厂家SHARP(夏普) 
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    • 数量28000 
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    • 深圳市晨豪科技有限公司

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    • 数量89630 
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    • 数量5800 
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    产品型号GP1S093HCZ0F的概述

    GP1S093HCZ0F芯片概述 GP1S093HCZ0F是一款由日本公司歌华电子（Sharp Corporation）生产的光电传感器。它是以发射和接收元件构成的集成光电开关模块，广泛应用于各种光纤通信、位置检测和物体传感等领域。通过光电技术，GP1S093HCZ0F能够实现高效、精准的工作方式，适用于需快速响应以及精准测距的场合。 此芯片通过内部的红外发光二极管（LED）与光敏晶体管（Phototransistor）共同作用，能在隔离的情况下感应到光的变化。它具备较高的灵敏度和良好的稳定性，使其成为现代电子产品中不可或缺的一部分。 GP1S093HCZ0F的详细参数 1. 电源电压（VCC）：通常在4.5V到20V之间，适合对电源要求不严格的系统。 2. 输出电流：可输出最大50mA电流。 3. 输入电流：发光二极管的输入电流要求在10mA至20mA范围内，具体值依据应用场景而定。...

    产品型号GP1S093HCZ0F的Datasheet PDF文件预览

    GP1S093HCZ0F  
    Gap : 2mm Slit : 0.3mm  
    Phototransistor Output,  
    Compact Transmissive  
    Photointerrupter  
    GP1S093HCZ0F  
    Description  
    Agency approvals/Compliance  
    ■
    ■
    GP1S093HCZ0F is a compact-package, photo-  
    1. Compliant with RoHS directive  
    transistor output, transmissive photointerrupter, with  
    opposing emitter and detector in a molding that provides  
    non-contact sensing. The compact package series is  
    a result of unique technology combing transfer and  
    injection molding.  
    Applications  
    ■
    1. General purpose detection of object presence or  
    motion.  
    2. Example : printer, lens control for camera  
    The device has a low profile, and wide gap.  
    Features  
    ■
    1. Transmissive with phototransistor output  
    2. Highlights :  
    • Compact Size  
    3. Key Parameters :  
    • Gap Width : 2mm  
    • Slit Width (detector side): 0.3mm  
    • Package : 4.5 2.6 2.9mm  
    ×
    ×
    4. Lead free and RoHS directive compliant  
    Notice The content of data sheet is subject to change without prior notice.  
    In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP  
    devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.  
    Sheet No.: D3-A00401EN  
    Date Oct. 3. 2005  
    © SHARP Corporation  
    1
    GP1S093HCZ0F  
    Internal Connection Diagram  
    ■
    Top view  
    1
    Anode  
    2
    3
    1
    4
    2
    3
    4
    Collector  
    Emitter  
    Cathode  
    (Unit : mm)  
    Outline Dimensions  
    ■
    Top view  
    (C0.3)  
    a-aʼ section  
    4.5  
    2
    (0.3)  
    Slit width  
    2.6  
    (C0.4)  
    Optical  
    center  
    ∗∗∗  
    (C0.3)  
    ∗∗∗  
    0.4  
    ∗∗∗  
    ∗∗  
    +0.2  
    −0.1  
    0.15  
    ∗2  
    ∗3.55  
    • Unspecified tolerance shall be ±0.2mm.  
    • Dimensions in parenthesis are shown for  
    reference.  
    3
    2
    4
    1
    • The dimensions indicated by refer to those  
    ∗
    measured from the lead base.  
    • The dimensions shown do not include those of  
    burrs.  
    Burr's dimension shall be 0.15mm MAX.  
    • The lead may be exposed at the shaded  
    portion.  
    •
    •
    This portion has no solder plating.  
    ∗∗  
    This portion does not have any solder  
    ∗∗∗  
    plating in some cases.  
    Product mass : approx. 0.05g  
    Plating material : SnCu (Cu : TYP. 2%)  
    Country of origin  
    Japan  
    Sheet No.: D3-A00401EN  
    2
    GP1S093HCZ0F  
    Absolute Maximum Ratings  
    ■
    (T 25˚C )  
    =
    a
    Parameter  
    Symbol  
    Rating  
    50  
    Unit  
    mA  
    V
    Forward current  
    IF  
    VR  
    Input Reverse voltage  
    Power dissipation  
    6
    P
    75  
    mW  
    V
    Collector-emitter voltage  
    VCEO  
    VECO  
    IC  
    35  
    Emitter-collector voltage  
    Collector current  
    6
    V
    Output  
    20  
    mA  
    mW  
    mW  
    ˚C  
    Collector power dissipation  
    PC  
    75  
    Total power dissipation  
    Operating temperature  
    Storage temperature  
    Ptot  
    Topr  
    Tstg  
    Tsol  
    100  
    1mm or more  
    Soldering area  
    25 to 85  
    −
    +
    40 to 100  
    ˚C  
    −
    +
    ∗
    1Soldering temperature  
    260  
    ˚C  
    ∗1 For 5s or less  
    Electro-optical Characteristics  
    ■
    (T 25˚C )  
    =
    a
    Parameter  
    Symbol  
    Condition  
    20mA  
    MIN.  
    TYP. MAX.  
    Unit  
    V
    Forward voltage  
    VF  
    IR  
    I
    1.2  
    −
    1.4  
    10  
    =
    −
    −
    F
    Input  
    Reverse current  
    VR 3V  
    A
    μ
    =
    Output Collector dark current  
    ICEO  
    IC  
    VCE(sat)  
    tr  
    VCE 20V  
    100  
    400  
    0.4  
    150  
    150  
    nA  
    =
    −
    −
    Collector current  
    VCE 5V, I 5mA  
    100  
    −
    A
    μ
    =
    =
    F
    −
    Transfer  
    Collector-emitter saturation voltage  
    I
    10mA, I 40 A  
    V
    =
    F
    =
    C
    μ
    −
    charac-  
    Rise time  
    Fall time  
    50  
    50  
    s
    s
    −
    μ
    teristics Response time  
    VCE 5V, I 100 A, R 1k  
    =
    =
    C
    μ
    =
    L
    Ω
    tf  
    −
    μ
    Sheet No.: D3-A00401EN  
    3
    GP1S093HCZ0F  
    Fig.1 Forward Current vs.  
    Fig.2 Power Dissipation vs.  
    Ambient Temperature  
    60  
    Ambient Temperature  
    120  
    Ptot  
    100  
    50  
    40  
    30  
    20  
    80  
    75  
    P, Pc  
    60  
    40  
    20  
    15  
    10  
    0
    0
    −25  
    0
    25  
    50  
    75 85 100  
    ꢀ25  
    0
    25  
    50  
    75 85 100  
    Ambient temperature Ta (˚C)  
    Ambient temperature Ta (˚C)  
    Fig.3 Forward Current vs. Forward Voltage  
    Fig.4 Collector Current vs.  
    Forward Current  
    1.1  
    100  
    VCE=5V  
    Ta=25˚C  
    1
    0.9  
    0.8  
    0.7  
    0.6  
    0.5  
    0.4  
    0.3  
    0.2  
    ꢀ25˚C  
    0˚C  
    ꢁ25˚C  
    ꢁ50˚C  
    ꢁ75˚C  
    10  
    0.1  
    0
    1
    0
    0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7  
    Forward voltage VF (V)  
    3
    0
    2
    4
    6
    8
    10 12 14 16 18 20  
    Forward current IF (mA)  
    Fig.5 Collector Current vs.  
    Collector-emitter Voltage  
    Fig.6 Relative Collector Current vs.  
    Ambient Temperature  
    120  
    3.3  
    IFꢂ5mA  
    VCEꢂ5V  
    Ta=25˚C  
    110  
    3
    100  
    90  
    80  
    70  
    60  
    50  
    40  
    30  
    20  
    2.7  
    IF=50mA  
    2.4  
    2.1  
    1.8  
    1.5  
    1.2  
    0.9  
    0.6  
    IF=40mA  
    IF=30mA  
    IF=20mA  
    IF=10mA  
    IF=5mA  
    10  
    0
    0.3  
    0
    ꢀ25  
    0
    25  
    50  
    75  
    0
    1
    2
    3
    4
    5
    6
    7
    8
    9
    10  
    Ambient temperature Ta (˚C)  
    Collector-emitter voltage VCE (V)  
    Sheet No.: D3-A00401EN  
    4
    GP1S093HCZ0F  
    Fig.7 Collector-emitter Saturation Voltage vs. Fig.8 Collector Dark Current vs.  
    Ambient Temperature  
    0.2  
    Ambient Temperature  
    10ꢀ6  
    IF=10mA  
    IC=40μA  
    VCEꢂ20V  
    0.18  
    0.16  
    0.14  
    0.12  
    0.1  
    10ꢀ7  
    10ꢀ8  
    10ꢀ9  
    0.08  
    0.06  
    0.04  
    10ꢀ10  
    −25  
    0
    25  
    50  
    75  
    0
    25  
    50  
    75  
    100  
    Ambient temperature Ta (˚C)  
    Ambient temperature Ta (˚C)  
    Fig.9 Response Time vs. Load Resistance  
    Fig.10 Test Circuit for Response Time  
    1 000  
    VCEꢂ5V  
    VCC  
    ICꢂ100MA  
    Taꢂ25˚C  
    RL  
    RD  
    Input  
    Output  
    Output  
    Input  
    10%  
    90%  
    100  
    tf  
    ts  
    tf  
    tr  
    td  
    tr  
    10  
    1
    td  
    ts  
    0.1  
    1
    10  
    100  
    Load resistance RL (k7)  
    Fig.11 Detecting Position Characteristics (1)  
    Fig.12 Detecting Position Characteristics (2)  
    100  
    100  
    IF=5mA  
    VCE=5V  
    IF=5mA  
    VCE=5V  
    90  
    90  
    80  
    80  
    L=0  
    L
    L=0  
    70  
    60  
    50  
    40  
    30  
    20  
    70  
    60  
    L
    50  
    40  
    30  
    20  
    10  
    0
    10  
    0
    0
    0.5  
    1
    1.5  
    2
    0
    0.5  
    1
    1.5  
    2
    Shield moving distance L (mm)  
    Shield moving distance L (mm)  
    Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.  
    Sheet No.: D3-A00401EN  
    5
    GP1S093HCZ0F  
    Design Considerations  
    ■
    ●
    Design guide  
    1) Prevention of faulty operation  
    To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to  
    the external light.  
    2) Position of opaque board  
    Opaque board shall be installed at place 1.6mm or more from the top of elements.  
    (Example)  
    1.6mm or more  
    1.6mm or more  
    This product is not designed against irradiation and incorporates non-coherent IRED.  
    ●
    ●
    Degradation  
    In general, the emission of the IRED used in photointerrupter will degrade over time.  
    In the case of long term operation, please take the general IRED degradation (50% degradation over 5  
    years) into the design consideration.  
    Parts  
    This product is assembled using the below parts.  
    • Photodetector (qty. : 1)  
    Maximum Sensitivity  
    wavelength (nm)  
    Sensitivity  
    wavelength (nm)  
    Category  
    Material  
    Response time (μs)  
    Phototransistor  
    Silicon (Si)  
    930  
    700 to 1 200  
    20  
    • Photo emitter (qty. : 1)  
    Maximum light emitting  
    wavelength (nm)  
    Category  
    Material  
    I/O Frequency (MHz)  
    0.3  
    Infrared emitting diode  
    (non-coherent)  
    Gallium arsenide (GaAs)  
    950  
    • Material  
    Case  
    Lead frame  
    42Alloy  
    Lead frame plating  
    SnCu plating  
    Black polyphernylene  
    sulfide resin (UL94 V-0)  
    Sheet No.: D3-A00401EN  
    6
    GP1S093HCZ0F  
    Manufacturing Guidelines  
    ■
    ●
    Soldering Method  
    Flow Soldering:  
    Soldering should be completed below 260˚C and within 5 s.  
    Please solder within one time.  
    Soldering area is 1mm or more away from the bottom of housing.  
    Please take care not to let any external force exert on lead pins.  
    Please don't do soldering with preheating, and please don't do soldering by reflow.  
    Hand soldering  
    Hand soldering should be completed within 3 s when the point of solder iron is below 350̊C.  
    Please solder within one time.  
    Please don't touch the terminals directly by soldering iron.  
    Soldered product shall treat at room temperature.  
    Other notice  
    Please test the soldering method in actual condition and make sure the soldering works fine, since the  
    impact on the junction between the device and PCB varies depending on the cooling and soldering  
    conditions.  
    ●
    Cleaning instructions  
    Solvent cleaning :  
    Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less.  
    Ultrasonic cleaning :  
    Do not execute ultrasonic cleaning.  
    Recommended solvent materials :  
    Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.  
    ●
    Presence of ODC  
    This product shall not contain the following materials.  
    And they are not used in the production process for this product.  
    Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform)  
    Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all.  
    This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).  
    •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated  
    diphenyl ethers (PBDE).  
    Sheet No.: D3-A00401EN  
    7
    GP1S093HCZ0F  
    Package specification  
    ■
    ●
    Sleeve package  
    Package materials  
    Sleeve : Polystyrene  
    Stopper : Styrene-Elastomer  
    Package method  
    MAX. 100 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless  
    stoppers.  
    MAX. 50 sleeves in one case.  
    Sheet No.: D3-A00401EN  
    8
    GP1S093HCZ0F  
    Important Notices  
    ■
    · The circuit application examples in this publication  
    are provided to explain representative applications of  
    SHARP devices and are not intended to guarantee any  
    circuit design or license any intellectual property rights.  
    SHARP takes no responsibility for any problems related  
    to any intellectual property right of a third party resulting  
    from the use of SHARP's devices.  
    with equipment that requires higher reliability such as:  
    --- Transportation control and safety equipment (i.e.,  
    aircraft, trains, automobiles, etc.)  
    --- Traffic signals  
    --- Gas leakage sensor breakers  
    --- Alarm equipment  
    --- Various safety devices, etc.  
    (iii) SHARP devices shall not be used for or in  
    connection with equipment that requires an extremely  
    high level of reliability and safety such as:  
    --- Space applications  
    · Contact SHARP in order to obtain the latest device  
    specification sheets before using any SHARP device.  
    SHARP reserves the right to make changes in the  
    specifications, characteristics, data, materials, structure,  
    and other contents described herein at any time  
    without notice in order to improve design or reliability.  
    Manufacturing locations are also subject to change  
    without notice.  
    --- Telecommunication equipment [trunk lines]  
    --- Nuclear power control equipment  
    --- Medical and other life support equipment (e.g.,  
    scuba).  
    · If the SHARP devices listed in this publication fall  
    within the scope of strategic products described in the  
    Foreign Exchange and Foreign Trade Law of Japan, it  
    is necessary to obtain approval to export such SHARP  
    devices.  
    · Observe the following points when using any devices  
    in this publication. SHARP takes no responsibility for  
    damage caused by improper use of the devices which  
    does not meet the conditions and absolute maximum  
    ratings to be used specified in the relevant specification  
    sheet nor meet the following conditions:  
    · This publication is the proprietary product of SHARP  
    and is copyrighted, with all rights reserved. Under  
    the copyright laws, no part of this publication may be  
    reproduced or transmitted in any form or by any means,  
    electronic or mechanical, for any purpose, in whole or in  
    part, without the express written permission of SHARP.  
    Express written permission is also required before any  
    use of this publication may be made by a third party.  
    (i) The devices in this publication are designed for use  
    in general electronic equipment designs such as:  
    --- Personal computers  
    --- Office automation equipment  
    --- Telecommunication equipment [terminal]  
    --- Test and measurement equipment  
    --- Industrial control  
    --- Audio visual equipment  
    --- Consumer electronics  
    · Contact and consult with a SHARP representative  
    if there are any questions about the contents of this  
    publication.  
    (ii) Measures such as fail-safe function and redundant  
    design should be taken to ensure reliability and safety  
    when SHARP devices are used for or in connection  
    Sheet No.: D3-A00401EN  
    [H129]  
    9
    配单直通车
    GP1S094HCZ产品参数
    型号:GP1S094HCZ
    是否Rohs认证： 不符合
    生命周期：Obsolete
    IHS 制造商：SHARP CORP
    Reach Compliance Code：unknown
    风险等级：5.82
    Coll-Emtr Bkdn Voltage-Min：35 V
    配置：SINGLE
    最大暗电源：100 nA
    最大正向电流：0.05 A
    功能数量：1
    标称通态集电极电流：0.04 mA
    最高工作温度：85 °C
    最低工作温度：-25 °C
    光电设备类型：TRANSISTOR OUTPUT SLOTTED SWITCH
    标称槽宽：3 mm
    Base Number Matches：1
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