GS1000FL - GS1010FL
SURFACE MOUNT RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.0 A
Features
For surface mounted applications
Low profile package
!
!
!
!
Ideal for automated placement
High temperaturesoldering : 260°C /10
seconds at terminals
B
!
Glass Passivated Chip Junction
C
E
SOD-123FL
Mechanical Data
Dim Min Max
Typ
3.58 3.72 3.65
2.72 2.78 2.75
1.77 1.83 1.80
1.02 1.08 1.05
0.097 1.03 1.00
0.13 0.17 0.15
0.53 0.57 0.55
A
B
C
D
E
H
L
Case: JEDEC SOD-123FL molded
!
!
plastic body over passivated chip
D
H
!
Terminals
: Plated axial leads,
!
!
L
Method 2026
solderable per MIL-STD-750,
Polarity
: Color band denotes cathode end
All Dimensions in mm
E
!
!
Mounting Position
: Any
Weight
:0.0007 ounce, 0.02 grams
A
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
GS1000FL
Symbol
GS1002FL GS1003FL GS1004FL GS1006FL GS1008FL GS1010FL
Unit
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
700
V
V
Maximum RMS voltage
VRMS
35
50
70
140
200
280
400
420
600
560
800
Maximum DC blocking voltage
1000
100
VDC
V
A
Maximum average forward rectified current
I(AV)
1.0
25.0
1.1
at TA=65 C (NOTE 1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
A
V
rated load (JEDEC Method)
TL=25 C
VF
IR
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
10.0
50.0
µ
A
TA=125 C
pF
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
4
CJ
RθJA
K/W
65
Operating junction and storage temperature range
TJ,TSTG
-50 to +150
C
Note:
1.Averaged over any 20ms period.
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
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