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  • 北京元坤伟业科技有限公司

         该会员已使用本站17年以上

  • GSOT15C-GS08
  • 数量-
  • 厂家-
  • 封装-
  • 批号-
  • -
  • QQ:857273081QQ:857273081 复制
    QQ:1594462451QQ:1594462451 复制
  • 010-62104931、62106431、62104891、62104791 QQ:857273081QQ:1594462451
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  • GSOT15C-GS08图
  • 深圳市凯鑫跃电子有限公司

     该会员已使用本站13年以上
  • GSOT15C-GS08 现货库存
  • 数量60000 
  • 厂家VISHAY 
  • 封装SOT-23-5 
  • 批号2023+PB 
  • ★专业经营贴片二,三极管,桥堆★★现货低价抛售★
  • QQ:2885514887QQ:2885514887 复制
  • 0755-83987779 QQ:2885514887
  • GSOT15C-GS08图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • GSOT15C-GS08 现货库存
  • 数量6980 
  • 厂家VISHAY 
  • 封装SOT23-3 
  • 批号22+ 
  • 新到现货、一手货源、当天发货、bom配单
  • QQ:2881512844QQ:2881512844 复制
  • 075584507705 QQ:2881512844
  • GSOT15C-GS08图
  • 深圳市羿芯诚电子有限公司

     该会员已使用本站7年以上
  • GSOT15C-GS08
  • 数量16000 
  • 厂家VISHAY/威世 
  • 封装SOT-23 
  • 批号21+ 
  • 羿芯诚只做原装 原厂渠道 价格优势
  • QQ:2881498351QQ:2881498351 复制
  • 0755-22968581 QQ:2881498351
  • GSOT15C-GS08图
  • 深圳市卓越微芯电子有限公司

     该会员已使用本站12年以上
  • GSOT15C-GS08
  • 数量5300 
  • 厂家VISHAY 
  • 封装SOT23 
  • 批号20+ 
  • 百分百原装正品 真实公司现货库存 本公司只做原装 可开13%增值税发票,支持样品,欢迎来电咨询!
  • QQ:1437347957QQ:1437347957 复制
    QQ:1205045963QQ:1205045963 复制
  • 0755-82343089 QQ:1437347957QQ:1205045963
  • GSOT15C-GS08图
  • 深圳市欧立现代科技有限公司

     该会员已使用本站12年以上
  • GSOT15C-GS08
  • 数量10049 
  • 厂家VISHAY 
  • 封装SOT-23 
  • 批号24+ 
  • 全新原装现货,欢迎询购!
  • QQ:1950791264QQ:1950791264 复制
    QQ:221698708QQ:221698708 复制
  • 0755-83222787 QQ:1950791264QQ:221698708
  • GSOT15C-GS08图
  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • GSOT15C-GS08
  • 数量5000 
  • 厂家Littelfuse 
  • 封装贴/插片 
  • 批号2024+ 
  • 百分百原装正品,现货库存
  • QQ:857273081QQ:857273081 复制
    QQ:1594462451QQ:1594462451 复制
  • 010-62104791 QQ:857273081QQ:1594462451
  • GSOT15C-GS08图
  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • GSOT15C-GS08
  • 数量83500 
  • 厂家VISHAY-威世 
  • 封装SOT-23-3 
  • 批号▉▉:2年内 
  • ▉▉¥10一一有问必回一一有长期订货一备货HK仓库
  • QQ:43871025QQ:43871025 复制
  • 131-4700-5145---Q-微-恭-候---有-问-秒-回 QQ:43871025
  • GSOT15C-GS08图
  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • GSOT15C-GS08
  • 数量78800 
  • 厂家VISHAY-威世 
  • 封装SOT-23-3 
  • 批号▉▉:2年内 
  • ▉▉¥10一一有问必回一一有长期订货一备货HK仓库
  • QQ:43871025QQ:43871025 复制
  • 131-4700-5145---Q-微-恭-候---有-问-秒-回 QQ:43871025
  • GSOT15C-GS08图
  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • GSOT15C-GS08
  • 数量5000 
  • 厂家VISHAY 
  • 封装SOT23 
  • 批号16+ 
  • 百分百原装正品,现货库存
  • QQ:857273081QQ:857273081 复制
    QQ:1594462451QQ:1594462451 复制
  • 010-62106431 QQ:857273081QQ:1594462451
  • GSOT15C-GS08图
  • 深圳市华芯盛世科技有限公司

     该会员已使用本站13年以上
  • GSOT15C-GS08
  • 数量8650000 
  • 厂家VISHAY/PL 
  • 封装SOT-23 
  • 批号最新批号 
  • 一级代理,原装特价现货!
  • QQ:2881475757QQ:2881475757 复制
  • 0755-83225692 QQ:2881475757
  • GSOT15C-GS08图
  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • GSOT15C-GS08
  • 数量12000 
  • 厂家VISHAY/威世 
  • 封装NA/ 
  • 批号23+ 
  • 优势代理渠道,原装正品,可全系列订货开增值税票
  • QQ:3007977934QQ:3007977934 复制
    QQ:3007947087QQ:3007947087 复制
  • 0755-82546830 QQ:3007977934QQ:3007947087
  • GSOT15C-GS08图
  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
  • GSOT15C-GS08
  • 数量21580 
  • 厂家VISHAY 
  • 封装SOT23 
  • 批号2023+ 
  • 绝对原装正品全新进口深圳现货
  • QQ:1002316308QQ:1002316308 复制
    QQ:515102657QQ:515102657 复制
  • 深圳分公司0755-83777708“进口原装正品专供” QQ:1002316308QQ:515102657
  • GSOT15C-GS08图
  • 深圳市三得电子有限公司

     该会员已使用本站15年以上
  • GSOT15C-GS08
  • 数量91752 
  • 厂家VISHAY/威世 
  • 封装SOT-23 
  • 批号2024 
  • 深圳原装现货库存,欢迎咨询合作
  • QQ:414322027QQ:414322027 复制
    QQ:565106636QQ:565106636 复制
  • 15026993318 QQ:414322027QQ:565106636
  • GSOT15C-GS08图
  • 深圳市华来深电子有限公司

     该会员已使用本站13年以上
  • GSOT15C-GS08
  • 数量8560 
  • 厂家VISHAY 
  • 封装SOT23-3 
  • 批号17+ 
  • 受权代理!全新原装现货特价热卖!
  • QQ:1258645397QQ:1258645397 复制
    QQ:876098337QQ:876098337 复制
  • 0755-83238902 QQ:1258645397QQ:876098337
  • GSOT15C-GS08图
  • 深圳市硅诺电子科技有限公司

     该会员已使用本站8年以上
  • GSOT15C-GS08
  • 数量89000 
  • 厂家Vishay 
  • 封装SOT-23 
  • 批号17+ 
  • 原厂指定分销商,有意请来电或QQ洽谈
  • QQ:1091796029QQ:1091796029 复制
    QQ:916896414QQ:916896414 复制
  • 0755-82772151 QQ:1091796029QQ:916896414
  • GSOT15C-GS08图
  • 深圳市凯鑫跃电子有限公司

     该会员已使用本站13年以上
  • GSOT15C-GS08
  • 数量36000 
  • 厂家VISHAY 
  • 封装SOT-23 
  • 批号2023+PB 
  • 进口全新原装无铅房间现货
  • QQ:2885514887QQ:2885514887 复制
  • 0755-83987779 QQ:2885514887
  • GSOT15C-GS08图
  • 深圳市宏世佳电子科技有限公司

     该会员已使用本站13年以上
  • GSOT15C-GS08
  • 数量7695 
  • 厂家Vishay 
  • 封装SOT-23 
  • 批号2023+ 
  • 全新原厂原装产品、公司现货销售
  • QQ:2881894392QQ:2881894392 复制
    QQ:2881894393QQ:2881894393 复制
  • 0755- QQ:2881894392QQ:2881894393
  • GSOT15C-GS08图
  • 昂富(深圳)电子科技有限公司

     该会员已使用本站4年以上
  • GSOT15C-GS08
  • 数量166808 
  • 厂家Vishay 
  • 封装SOT-23 
  • 批号23+ 
  • 一站式BOM配单,短缺料找现货,怕受骗,就找昂富电子.
  • QQ:GTY82dX7
  • 0755-23611557【陈妙华 QQ:GTY82dX7
  • GSOT15C-GS08图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • GSOT15C-GS08
  • 数量26980 
  • 厂家VISHAY 
  • 封装SOT23 
  • 批号全新环保批次 
  • 新到现货、一手货源、当天发货、bom配单
  • QQ:1435424310QQ:1435424310 复制
  • 0755-84507451 QQ:1435424310
  • GSOT15C-GS08 TEL:88834448图
  • 深圳市汇满鑫电子科技有限公司

     该会员已使用本站3年以上
  • GSOT15C-GS08 TEL:88834448
  • 数量2021 
  • 厂家回收IC 
  • 封装回收公司呆料 回收此型号 寻找代理渠道 
  • 批号
  • QQ:492609889QQ:492609889 复制
  • 0755-13828837567 QQ:492609889
  • GSOT15C-GS08图
  • 万三科技(深圳)有限公司

     该会员已使用本站2年以上
  • GSOT15C-GS08
  • 数量6500000 
  • 厂家Vishay 
  • 封装原厂原装 
  • 批号22+ 
  • 万三科技 秉承原装 实单可议
  • QQ:3008961396QQ:3008961396 复制
  • 0755-21008751 QQ:3008961396
  • GSOT15C-GS08图
  • 深圳市晶美隆科技有限公司

     该会员已使用本站15年以上
  • GSOT15C-GS08
  • 数量98000 
  • 厂家VISHAY/威世 
  • 封装SOT-23 
  • 批号24+ 
  • 假一罚十,原装进口正品现货供应,价格优势。
  • QQ:198857245QQ:198857245 复制
  • 0755-82865294 QQ:198857245
  • GSOT15C-GS08图
  • 北京云中青城科技有限公司

     该会员已使用本站8年以上
  • GSOT15C-GS08
  • 数量6000 
  • 厂家VISHAY 
  • 封装SOT-23 
  • 批号20+ 
  • 只做原装.诚信经营
  • QQ:1290208342QQ:1290208342 复制
    QQ:260779663QQ:260779663 复制
  • 010-62669145 QQ:1290208342QQ:260779663
  • GSOT15C-GS08图
  • 深圳市科庆电子有限公司

     该会员已使用本站16年以上
  • GSOT15C-GS08
  • 数量6900 
  • 厂家VISHAY 
  • 封装SOT-23 
  • 批号23+ 
  • 只做进口原装/到货/可含13%税
  • QQ:2850188252QQ:2850188252 复制
    QQ:2850188256QQ:2850188256 复制
  • 0755 QQ:2850188252QQ:2850188256
  • GSOT15C-GS08图
  • 深圳市瑞天芯科技有限公司

     该会员已使用本站7年以上
  • GSOT15C-GS08
  • 数量20000 
  • 厂家VISHAY/威世 
  • 封装SOT-23 
  • 批号22+ 
  • 深圳现货库存,保证原装正品
  • QQ:1940213521QQ:1940213521 复制
  • 15973558688 QQ:1940213521
  • GSOT15C-GS08图
  • 深圳市创思克科技有限公司

     该会员已使用本站2年以上
  • GSOT15C-GS08
  • 数量7800 
  • 厂家VISHAY/威世 
  • 封装SOT-23 
  • 批号20+ 
  • 全新原装原厂实力挺实单欢迎来撩
  • QQ:1092793871QQ:1092793871 复制
  • -0755-88910020 QQ:1092793871
  • GSOT15C-GS08图
  • 深圳市澳亿芯电子

     该会员已使用本站13年以上
  • GSOT15C-GS08
  • 数量
  • 厂家Vishay 
  • 封装SOT-23 
  • 批号 
  • QQ:634389814QQ:634389814 复制
  • 0755-83227826 QQ:634389814
  • GSOT15C-GS08图
  • 深圳市一线半导体有限公司

     该会员已使用本站11年以上
  • GSOT15C-GS08
  • 数量28000 
  • 厂家原厂品牌 
  • 封装原厂外观 
  • 批号 
  • 全新原装部分现货其他订货
  • QQ:2881493920QQ:2881493920 复制
    QQ:2881493921QQ:2881493921 复制
  • 0755-88608801多线 QQ:2881493920QQ:2881493921
  • GSOT15C-GS08图
  • 深圳市晨豪科技有限公司

     该会员已使用本站12年以上
  • GSOT15C-GS08
  • 数量89630 
  • 厂家VISHAY/威世 
  • 封装SOT-23 
  • 批号23+ 
  • 当天发货全新原装现货
  • QQ:1743149803QQ:1743149803 复制
    QQ:1852346906QQ:1852346906 复制
  • 0755-82732291 QQ:1743149803QQ:1852346906

产品型号GSOT15C-GS08的概述

GSOT15C-GS08芯片概述及详细参数分析 一、芯片概述 GSOT15C-GS08是一款主要用于电源保护和电压管理的保护芯片,广泛应用于各类电子产品中。这款芯片以其优良的性能和可靠性,在消费电子、汽车电子及通信设备等领域得到了广泛的应用。GSOT15C-GS08在电路设计中提供了重要的保护功能,能够有效防止瞬态过电压对敏感电子元件的损害。 二、详细参数 芯片的详细参数是评估其性能的重要依据。GSOT15C-GS08的主要参数包括: 1. 工作电压范围:GSOT15C-GS08在4.5V至15V的范围内正常工作,适用于多种电源配置环境。 2. 静态电流:芯片在静态情况下的电流消耗较低,通常在几个微安级别,适合用于低功耗设备。 3. 浪涌电流承受能力:该芯片能够承受高达30A的浪涌电流,确保在电流瞬变情况下的稳定性。 4. 内部电阻:GSOT15C-GS08的内部电阻较低,通常在几个...

产品型号GSOT15C-GS08的Datasheet PDF文件预览

GSOT03C to GSOT36C  
Vishay Semiconductors  
Two-Line ESD-Protection in SOT-23  
FEATURES  
• Two-line ESD-protection device  
1
2
• ESD-protection acc. IEC 61000-4-2  
ꢀ0 kV contact discharge  
ꢀ0 kV air discharge  
3
• Space saving SOT-2ꢀ package  
• AEC-Q101 qualified  
• eꢀ - Sn  
20456  
20512  
1
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
MARKING (example only)  
YYY  
20357  
YYY = type code (see table below)  
XX = date code  
ORDERING INFORMATION  
ENVIRONMENTAL  
STATUS  
TAPED UNITS PER REEL  
(8 mm TAPE ON 7" REEL)  
MINIMUM ORDER  
QUANTITY  
DEVICE NAME  
GSOT0ꢀC  
GSOT04C  
GSOT05C  
GSOT08C  
GSOT12C  
GSOT15C  
GSOT24C  
GSOTꢀ6C  
ORDERING CODE  
Standard  
Green  
GSOT0ꢀC-GS08  
GSOT0ꢀC-V-G-08  
GSOT04C-GS08  
GSOT04C-V-G-08  
GSOT05C-GS08  
GSOT05C-V-G-08  
GSOT08C-GS08  
GSOT08C-V-G-08  
GSOT12C-GS08  
GSOT12C-V-G-08  
GSOT15C-GS08  
GSOT15C-V-G-08  
GSOT24C-GS08  
GSOT24C-V-G-08  
GSOTꢀ6C-GS08  
GSOTꢀ6C-V-G-08  
ꢀ000  
ꢀ000  
ꢀ000  
ꢀ000  
ꢀ000  
ꢀ000  
ꢀ000  
ꢀ000  
15 000  
15 000  
15 000  
15 000  
15 000  
15 000  
15 000  
15 000  
Standard  
Green  
Standard  
Green  
Standard  
Green  
Standard  
Green  
Standard  
Green  
Standard  
Green  
Standard  
Green  
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902  
Document Number: 85824  
Rev. 2.0, 22-Jul-10  
For technical questions, contact: ESDprotection@vishay.com  
www.vishay.com  
1
GSOT03C to GSOT36C  
Two-Line ESD-Protection in SOT-2ꢀ  
Vishay Semiconductors  
PACKAGE DATA  
MOLDING  
DEVICE  
NAME  
PACKAGE  
NAME  
TYPE  
CODE  
ENVIRONMENTAL  
STATUS  
COMPOUND  
FLAMMABILITY SENSITIVITY LEVEL  
RATING  
MOISTURE  
SOLDERING  
CONDITIONS  
WEIGHT  
0ꢀC  
C1G  
04C  
C8G  
05C  
C2C  
08C  
CꢀG  
12C  
C4G  
15C  
C5G  
24C  
C6G  
ꢀ6C  
C7G  
Standard  
Green  
8.8 mg  
8.1 mg  
8.8 mg  
8.1 mg  
8.8 mg  
8.1 mg  
8.8 mg  
8.1 mg  
8.8 mg  
8.1 mg  
8.8 mg  
8.1 mg  
8.8 mg  
8.1 mg  
8.8 mg  
8.1 mg  
MSL level 1  
UL 94 V-0  
GSOT0ꢀC  
GSOT04C  
GSOT05C  
GSOT08C  
GSOT12C  
GSOT15C  
GSOT24C  
GSOTꢀ6C  
SOT-2ꢀ  
SOT-2ꢀ  
SOT-2ꢀ  
SOT-2ꢀ  
SOT-2ꢀ  
SOT-2ꢀ  
SOT-2ꢀ  
SOT-2ꢀ  
260 °C/10 s at terminals  
260 °C/10 s at terminals  
260 °C/10 s at terminals  
260 °C/10 s at terminals  
260 °C/10 s at terminals  
260 °C/10 s at terminals  
260 °C/10 s at terminals  
260 °C/10 s at terminals  
(according J-STD-020)  
Standard  
Green  
MSL level 1  
UL 94 V-0  
(according J-STD-020)  
Standard  
Green  
MSL level 1  
UL 94 V-0  
(according J-STD-020)  
Standard  
Green  
MSL level 1  
UL 94 V-0  
(according J-STD-020)  
Standard  
Green  
MSL level 1  
UL 94 V-0  
(according J-STD-020)  
Standard  
Green  
MSL level 1  
UL 94 V-0  
(according J-STD-020)  
Standard  
Green  
MSL level 1  
UL 94 V-0  
(according J-STD-020)  
Standard  
Green  
MSL level 1  
UL 94 V-0  
(according J-STD-020)  
ABSOLUTE MAXIMUM RATINGS GSOT03C  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
Pin 1 to ꢀ or pin 2 to ꢀ  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
ꢀ0  
ꢀ0  
A
Peak pulse current  
IPPM  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
A
Pin 1 to ꢀ or pin 2 to ꢀ  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
ꢀ69  
504  
W
W
Peak pulse power  
ESD immunity  
PPP  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
Contact discharge acc. IEC 61000-4-2; 10 pulses  
Air discharge acc. IEC 61000-4-2; 10 pulses  
Junction temperature  
ꢀ0  
ꢀ0  
kV  
kV  
°C  
°C  
VESD  
Operating temperature  
Storage temperature  
TJ  
- 40 to + 125  
- 55 to + 150  
TSTG  
ABSOLUTE MAXIMUM RATINGS GSOT04C  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
Pin 1 to ꢀ or pin 2 to ꢀ  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
ꢀ0  
A
Peak pulse current  
IPPM  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
ꢀ0  
A
Pin 1 to ꢀ or pin 2 to ꢀ  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
429  
564  
W
W
Peak pulse power  
ESD immunity  
PPP  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
Contact discharge acc. IEC 61000-4-2; 10 pulses  
Air discharge acc. IEC 61000-4-2; 10 pulses  
Junction temperature  
ꢀ0  
ꢀ0  
kV  
kV  
°C  
°C  
VESD  
Operating temperature  
Storage temperature  
TJ  
- 40 to + 125  
- 55 to + 150  
TSTG  
www.vishay.com  
2
For technical questions, contact: ESDprotection@vishay.com  
Document Number: 85824  
Rev. 2.0, 22-Jul-10  
GSOT03C to GSOT36C  
Two-Line ESD-Protection in SOT-2ꢀ  
Vishay Semiconductors  
ABSOLUTE MAXIMUM RATINGS GSOT05C  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
Pin 1 to ꢀ or pin 2 to ꢀ  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
ꢀ0  
A
Peak pulse current  
IPPM  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
ꢀ0  
A
Pin 1 to ꢀ or pin 2 to ꢀ  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
480  
612  
W
W
Peak pulse power  
ESD immunity  
PPP  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
Contact discharge acc. IEC 61000-4-2; 10 pulses  
Air discharge acc. IEC 61000-4-2; 10 pulses  
Junction temperature  
ꢀ0  
ꢀ0  
kV  
kV  
°C  
°C  
VESD  
Operating temperature  
Storage temperature  
TJ  
- 40 to + 125  
- 55 to + 150  
TSTG  
ABSOLUTE MAXIMUM RATINGS GSOT08C  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
Pin 1 to ꢀ or pin 2 to ꢀ  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
18  
A
Peak pulse current  
IPPM  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
18  
A
Pin 1 to ꢀ or pin 2 to ꢀ  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
ꢀ45  
400  
W
W
Peak pulse power  
ESD immunity  
PPP  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
Contact discharge acc. IEC 61000-4-2; 10 pulses  
Air discharge acc. IEC 61000-4-2; 10 pulses  
Junction temperature  
ꢀ0  
ꢀ0  
kV  
kV  
°C  
°C  
VESD  
Operating temperature  
Storage temperature  
TJ  
- 40 to + 125  
- 55 to + 150  
TSTG  
ABSOLUTE MAXIMUM RATINGS GSOT12C  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
Pin 1 to ꢀ or pin 2 to ꢀ  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
12  
A
Peak pulse current  
IPPM  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
12  
A
Pin 1 to ꢀ or pin 2 to ꢀ  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
ꢀ12  
ꢀꢀ7  
W
W
Peak pulse power  
ESD immunity  
PPP  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
Contact discharge acc. IEC 61000-4-2; 10 pulses  
Air discharge acc. IEC 61000-4-2; 10 pulses  
Junction temperature  
ꢀ0  
ꢀ0  
kV  
kV  
°C  
°C  
VESD  
Operating temperature  
Storage temperature  
TJ  
- 40 to + 125  
- 55 to + 150  
TSTG  
Document Number: 85824  
Rev. 2.0, 22-Jul-10  
For technical questions, contact: ESDprotection@vishay.com  
www.vishay.com  
GSOT03C to GSOT36C  
Two-Line ESD-Protection in SOT-2ꢀ  
Vishay Semiconductors  
ABSOLUTE MAXIMUM RATINGS GSOT15C  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
Pin 1 to ꢀ or pin 2 to ꢀ  
8
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
Peak pulse current  
IPPM  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
8
A
Pin 1 to ꢀ or pin 2 to ꢀ  
ꢀ45  
400  
W
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
Peak pulse power  
ESD immunity  
PPP  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
Contact discharge acc. IEC 61000-4-2; 10 pulses  
Air discharge acc. IEC 61000-4-2; 10 pulses  
Junction temperature  
ꢀ0  
ꢀ0  
kV  
kV  
°C  
°C  
VESD  
Operating temperature  
Storage temperature  
TJ  
- 40 to + 125  
- 55 to + 150  
TSTG  
ABSOLUTE MAXIMUM RATINGS GSOT24C  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
Pin 1 to ꢀ or pin 2 to ꢀ  
5
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
Peak pulse current  
IPPM  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
5
A
Pin 1 to ꢀ or pin 2 to ꢀ  
2ꢀ5  
240  
W
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
Peak pulse power  
ESD immunity  
PPP  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
Contact discharge acc. IEC 61000-4-2; 10 pulses  
Air discharge acc. IEC 61000-4-2; 10 pulses  
Junction temperature  
ꢀ0  
ꢀ0  
kV  
kV  
°C  
°C  
VESD  
Operating temperature  
Storage temperature  
TJ  
- 40 to + 125  
- 55 to + 150  
TSTG  
ABSOLUTE MAXIMUM RATINGS GSOT36C  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
Pin 1 to ꢀ or pin 2 to ꢀ  
ꢀ.5  
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
Peak pulse current  
IPPM  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
ꢀ.5  
248  
252  
A
Pin 1 to ꢀ or pin 2 to ꢀ  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
W
W
Peak pulse power  
ESD immunity  
PPP  
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected  
acc. IEC 61000-4-5, tp = 8/20 μs; single shot  
Contact discharge acc. IEC 61000-4-2; 10 pulses  
Air discharge acc. IEC 61000-4-2; 10 pulses  
Junction temperature  
ꢀ0  
ꢀ0  
kV  
kV  
°C  
°C  
VESD  
Operating temperature  
Storage temperature  
TJ  
- 40 to + 125  
- 55 to + 150  
TSTG  
BiAs-MODE (2-line bidirectional asymmetrical protection mode)  
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground  
and pin ꢀ connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line  
is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1  
and pin ꢀ offer a high isolation to the ground line. The protection device behaves like an open switch.  
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode  
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The  
clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance  
(resistance and inductance) of the protection device.  
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of  
the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.  
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is bidirectional and  
asymmetrical (BiAs).  
www.vishay.com  
4
For technical questions, contact: ESDprotection@vishay.com  
Document Number: 85824  
Rev. 2.0, 22-Jul-10  
GSOT03C to GSOT36C  
Two-Line ESD-Protection in SOT-2ꢀ  
Vishay Semiconductors  
L1  
L2  
2
1
BiAs  
Ground  
20358  
If a higher surge current or peak pulse current (IPP) is needed, both protection diodes in the GSOTxxC can also be used in  
parallel in order to “double” the performance.  
This offers:  
• double surge power = double peak pulse current (2 x IPPM  
• half of the line inductance = reduced clamping voltage  
• half of the line resistance = reduced clamping voltage  
• double line capacitance (2 x CD)  
)
• double reverse leakage current (2 x IR)  
L1  
2
1
Ground  
20ꢀ59  
ELECTRICAL CHARACTERISTICS GSOT03C  
PARAMETER  
TEST CONDITIONS/REMARKS  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
2
UNIT  
lines  
V
Protection paths  
Number of lines which can be protected  
at IR = 100 μA  
-
ꢀ.ꢀ  
-
Reverse working voltage  
Reverse current  
-
-
at VR = ꢀ.ꢀ V  
-
100  
-
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
4
-
4.6  
5.7  
10  
1
at IPP = 1 A  
7.5  
12.ꢀ  
1.2  
-
V
Reverse clamping voltage  
Forward clamping voltage  
Capacitance  
VC  
VF  
at IPP = IPPM = ꢀ0 A  
at IPP = 1 A  
-
V
-
V
at IPP = IPPM = ꢀ0 A  
at VR = 0 V; f = 1 MHz  
at VR = 1.6 V; f = 1 MHz  
-
4.5  
420  
260  
V
-
600  
-
pF  
pF  
CD  
-
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)  
ELECTRICAL CHARACTERISTICS GSOT04C  
PARAMETER  
TEST CONDITIONS/REMARKS  
Number of lines which can be protected  
at IR = 20 μA  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
UNIT  
lines  
V
Protection paths  
-
4
-
2
-
Reverse working voltage  
Reverse current  
-
at VR = 4 V  
-
20  
-
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
5
-
6.1  
7.5  
11.2  
1
at IPP = 1 A  
9
V
Reverse clamping voltage  
Forward clamping voltage  
Capacitance  
VC  
VF  
at IPP = IPPM = ꢀ0 A  
at IPP = 1 A  
-
14.ꢀ  
1.2  
-
V
-
V
at IPP = IPPM = ꢀ0 A  
at VR = 0 V; f = 1 MHz  
at VR = 2 V; f = 1 MHz  
-
4.5  
ꢀ10  
200  
V
-
450  
-
pF  
pF  
CD  
-
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)  
Document Number: 85824  
Rev. 2.0, 22-Jul-10  
For technical questions, contact: ESDprotection@vishay.com  
www.vishay.com  
5
GSOT03C to GSOT36C  
Two-Line ESD-Protection in SOT-2ꢀ  
Vishay Semiconductors  
ELECTRICAL CHARACTERISTICS GSOT05C  
PARAMETER  
TEST CONDITIONS/REMARKS  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
2
UNIT  
lines  
V
Protection paths  
Number of lines which can be protected  
at IR = 10 μA  
-
5
-
Reverse working voltage  
Reverse current  
-
-
at VR = 5 V  
-
10  
-
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
6
-
6.8  
7
at IPP = 1 A  
8.7  
16  
1.2  
-
V
Reverse clamping voltage  
Forward clamping voltage  
Capacitance  
VC  
VF  
at IPP = IPPM = ꢀ0 A  
at IPP = 1 A  
-
12  
1
V
-
V
at IPP = IPPM = ꢀ0 A  
at VR = 0 V; f = 1 MHz  
at VR = 2.5 V; f = 1 MHz  
-
4.5  
260  
150  
V
-
ꢀ50  
-
pF  
pF  
CD  
-
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)  
ELECTRICAL CHARACTERISTICS GSOT08C  
PARAMETER  
TEST CONDITIONS/REMARKS  
Number of lines which can be protected  
at IR = 5 μA  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
UNIT  
lines  
V
Protection paths  
-
8
-
2
-
Reverse working voltage  
Reverse current  
-
at VR = 8 V  
-
5
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
9
-
10  
10.7  
15.2  
1
-
at IPP = 1 A  
1ꢀ  
19.2  
1.2  
-
V
Reverse clamping voltage  
Forward clamping voltage  
Capacitance  
VC  
VF  
at IPP = IPPM = 18 A  
at IPP = 1 A  
-
V
-
V
at IPP = IPPM = 18 A  
at VR = 0 V; f = 1 MHz  
at VR = 4 V; f = 1 MHz  
-
V
-
160  
80  
250  
-
pF  
pF  
CD  
-
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)  
ELECTRICAL CHARACTERISTICS GSOT12C  
PARAMETER  
TEST CONDITIONS/REMARKS  
Number of lines which can be protected  
at IR = 1 μA  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
UNIT  
lines  
V
Protection paths  
-
2
-
Reverse working voltage  
Reverse current  
12  
-
at VR = 12 V  
-
-
1
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
1ꢀ.5  
15  
15.4  
21.2  
1
-
at IPP = 1 A  
-
-
-
-
-
-
18.7  
26  
1.2  
-
V
Reverse clamping voltage  
Forward clamping voltage  
Capacitance  
VC  
VF  
at IPP = IPPM = 12 A  
at IPP = 1 A  
V
V
at IPP = IPPM = 12 A  
at VR = 0 V; f = 1 MHz  
at VR = 6 V; f = 1 MHz  
2.2  
115  
50  
V
150  
-
pF  
pF  
CD  
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)  
www.vishay.com  
6
For technical questions, contact: ESDprotection@vishay.com  
Document Number: 85824  
Rev. 2.0, 22-Jul-10  
GSOT03C to GSOT36C  
Two-Line ESD-Protection in SOT-2ꢀ  
Vishay Semiconductors  
ELECTRICAL CHARACTERISTICS GSOT15C  
PARAMETER  
TEST CONDITIONS/REMARKS  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
UNIT  
lines  
V
Protection paths  
Number of lines which can be protected  
at IR = 1 μA  
-
2
-
Reverse working voltage  
Reverse current  
15  
-
at VR = 15 V  
-
-
1
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
16.5  
18  
19.4  
24.8  
1
-
at IPP = 1 A  
-
-
-
-
-
-
2ꢀ.5  
28.8  
1.2  
-
V
Reverse clamping voltage  
Forward clamping voltage  
Capacitance  
VC  
VF  
at IPP = IPPM = 8 A  
at IPP = 1 A  
V
V
at IPP = IPPM = 8 A  
at VR = 0 V; f = 1 MHz  
at VR = 7.5 V; f = 1 MHz  
1.8  
90  
ꢀ5  
V
120  
-
pF  
pF  
CD  
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)  
ELECTRICAL CHARACTERISTICS GSOT24C  
PARAMETER  
TEST CONDITIONS/REMARKS  
Number of lines which can be protected  
at IR = 1 μA  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
UNIT  
lines  
V
Protection paths  
-
24  
-
2
-
Reverse working voltage  
Reverse current  
-
at VR = 24 V  
-
1
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
27  
-
ꢀ0  
ꢀ4  
41  
1
-
at IPP = 1 A  
41  
47  
1.2  
-
V
Reverse clamping voltage  
Forward clamping voltage  
Capacitance  
VC  
VF  
at IPP = IPPM = 5 A  
at IPP = 1 A  
-
V
-
V
at IPP = IPPM = 5 A  
at VR = 0 V; f = 1 MHz  
at VR = 12 V; f = 1 MHz  
-
1.4  
65  
20  
V
-
80  
-
pF  
pF  
CD  
-
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)  
ELECTRICAL CHARACTERISTICS GSOT36C  
PARAMETER  
TEST CONDITIONS/REMARKS  
Number of lines which can be protected  
at IR = 1 μA  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
UNIT  
lines  
V
Protection paths  
-
ꢀ6  
-
2
-
Reverse working voltage  
Reverse current  
-
at VR = ꢀ6 V  
-
1
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
ꢀ9  
-
4ꢀ  
49  
59  
1
-
at IPP = 1 A  
60  
71  
1.2  
-
V
Reverse clamping voltage  
Forward clamping voltage  
Capacitance  
VC  
VF  
at IPP = IPPM = ꢀ.5 A  
at IPP = 1 A  
-
V
-
V
at IPP = IPPM = ꢀ.5 A  
at VR = 0 V; f = 1 MHz  
at VR = 18 V; f = 1 MHz  
-
1.ꢀ  
52  
12  
V
-
65  
-
pF  
pF  
CD  
-
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)  
BiSy-MODE (1-line bidirectional symmetrical protection mode)  
If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore  
pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin ꢀ must not be connected.  
Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes  
one diode in forward direction and the other one in reverse direction. The clamping voltage (VC) is defined by the breakthrough  
voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances  
(resistances and inductances) of the protection device.  
Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional  
and symmetrical (BiSy).  
Document Number: 85824  
Rev. 2.0, 22-Jul-10  
For technical questions, contact: ESDprotection@vishay.com  
www.vishay.com  
7
GSOT03C to GSOT36C  
Two-Line ESD-Protection in SOT-2ꢀ  
Vishay Semiconductors  
L1  
BiSy  
Ground  
20361  
ELECTRICAL CHARACTERISTICS GSOT03C  
PARAMETER  
TEST CONDITIONS/REMARKS  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
1
UNIT  
lines  
V
Protection paths  
Number of lines which can be protected  
at IR = 100 μA  
-
ꢀ.8  
-
Reverse working voltage  
Reverse current  
-
-
at VR = ꢀ.8 V  
-
100  
-
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
4.5  
-
5.ꢀ  
7
at IPP = 1 A  
8.4  
16.8  
ꢀ00  
-
V
Reverse clamping voltage  
Capacitance  
VC  
CD  
at IPP = IPPM = ꢀ0 A  
at VR = 0 V; f = 1 MHz  
at VR = 1.6 V; f = 1 MHz  
-
14  
210  
190  
V
-
pF  
pF  
-
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)  
ELECTRICAL CHARACTERISTICS GSOT04C  
PARAMETER  
TEST CONDITIONS/REMARKS  
Number of lines which can be protected  
at IR = 20 μA  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
UNIT  
lines  
V
Protection paths  
-
4.5  
-
1
-
Reverse working voltage  
Reverse current  
-
at VR = 4:5 V  
-
20  
-
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
5.5  
-
6.8  
7.5  
15.7  
155  
1ꢀ5  
at IPP = 1 A  
9
V
Reverse clamping voltage  
Capacitance  
VC  
CD  
at IPP = IPPM = ꢀ0 A  
at VR = 0 V; f = 1 MHz  
at VR = 2 V; f = 1 MHz  
-
18.8  
225  
-
V
-
pF  
pF  
-
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)  
ELECTRICAL CHARACTERISTICS GSOT05C  
PARAMETER  
TEST CONDITIONS/REMARKS  
Number of lines which can be protected  
at IR = 10 μA  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
1
UNIT  
lines  
V
Protection paths  
-
5.5  
-
Reverse working voltage  
Reverse current  
-
-
at VR = 5.5 V  
-
10  
-
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
6.5  
-
7.5  
8.1  
17  
1ꢀ0  
100  
at IPP = 1 A  
9.7  
20.4  
175  
-
V
Reverse clamping voltage  
Capacitance  
VC  
CD  
at IPP = IPPM = 18 A  
at VR = 0 V; f = 1 MHz  
at VR = 4 V; f = 1 MHz  
-
V
-
pF  
pF  
-
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)  
www.vishay.com  
8
For technical questions, contact: ESDprotection@vishay.com  
Document Number: 85824  
Rev. 2.0, 22-Jul-10  
GSOT03C to GSOT36C  
Two-Line ESD-Protection in SOT-2ꢀ  
Vishay Semiconductors  
ELECTRICAL CHARACTERISTICS GSOT08C  
PARAMETER  
TEST CONDITIONS/REMARKS  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
UNIT  
lines  
V
Protection paths  
Number of lines which can be protected  
at IR = 5 μA  
-
8.5  
-
1
-
Reverse working voltage  
Reverse current  
-
at VR = 8.5 V  
-
5
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
9.5  
-
10.7  
11.7  
18.5  
80  
-
at IPP = 1 A  
14  
22.2  
125  
-
V
Reverse clamping voltage  
Capacitance  
VC  
CD  
at IPP = IPPM = 18 A  
at VR = 0 V; f = 1 MHz  
at VR = 4 V; f = 1 MHz  
-
V
-
pF  
pF  
-
60  
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)  
ELECTRICAL CHARACTERISTICS GSOT12C  
PARAMETER  
TEST CONDITIONS/REMARKS  
Number of lines which can be protected  
at IR = 1 μA  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
UNIT  
lines  
V
Protection paths  
-
1
-
Reverse working voltage  
Reverse current  
12.5  
-
at VR = 12.5 V  
-
-
1
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
1ꢀ.5  
15.7  
16.4  
2ꢀ.4  
58  
-
at IPP = 1 A  
-
-
-
-
19.7  
28.1  
75  
-
V
Reverse clamping voltage  
Capacitance  
VC  
CD  
at IPP = IPPM = 12 A  
at VR = 0 V; f = 1 MHz  
at VR = 7.5 V; f = 1 MHz  
V
pF  
pF  
ꢀ6  
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)  
ELECTRICAL CHARACTERISTICS GSOT15C  
PARAMETER  
TEST CONDITIONS/REMARKS  
Number of lines which can be protected  
at IR = 1 μA  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
UNIT  
lines  
V
Protection paths  
-
1
-
Reverse working voltage  
Reverse current  
15.5  
-
at VR = 15.5 V  
-
17  
-
-
1
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
18.7  
20.4  
26.6  
45  
-
at IPP = 1 A  
24.5  
ꢀ0.6  
60  
-
V
Reverse clamping voltage  
Capacitance  
VC  
CD  
at IPP = IPPM = 8 A  
-
V
at VR = 0 V; f = 1 MHz  
at VR = 7.5 V; f = 1 MHz  
-
pF  
pF  
-
25  
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)  
ELECTRICAL CHARACTERISTICS GSOT24C  
PARAMETER  
TEST CONDITIONS/REMARKS  
Number of lines which can be protected  
at IR = 1 μA  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
UNIT  
lines  
V
Protection paths  
-
1
-
Reverse working voltage  
Reverse current  
24.5  
-
at VR = 24.5 V  
-
-
1
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
27.5  
ꢀ0.7  
ꢀ4  
40  
ꢀꢀ  
18  
-
at IPP = 1 A  
-
-
-
-
41  
48  
40  
-
V
Reverse clamping voltage  
Capacitance  
VC  
CD  
at IPP = IPPM = 5 A  
V
at VR = 0 V; f = 1 MHz  
at VR = 12 V; f = 1 MHz  
pF  
pF  
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)  
Document Number: 85824  
Rev. 2.0, 22-Jul-10  
For technical questions, contact: ESDprotection@vishay.com  
www.vishay.com  
9
GSOT03C to GSOT36C  
Two-Line ESD-Protection in SOT-2ꢀ  
Vishay Semiconductors  
ELECTRICAL CHARACTERISTICS GSOT36C  
PARAMETER  
TEST CONDITIONS/REMARKS  
SYMBOL  
Nchannel  
VRWM  
IR  
MIN.  
TYP.  
-
MAX.  
UNIT  
lines  
V
Protection paths  
Number of lines which can be protected  
at IR = 1 μA  
-
1
-
Reverse working voltage  
Reverse current  
ꢀ6.5  
-
at VR = ꢀ6.5 V  
-
-
1
μA  
V
Reverse breakdown voltage  
at IR = 1 mA  
VBR  
ꢀ9.5  
4ꢀ.7  
50  
60  
26  
10  
-
at IPP = 1 A  
-
-
-
-
60  
72  
ꢀꢀ  
-
V
Reverse clamping voltage  
Capacitance  
VC  
CD  
at IPP = IPPM = ꢀ.5 A  
at VR = 0 V; f = 1 MHz  
at VR = 18 V; f = 1 MHz  
V
pF  
pF  
Note  
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)  
PACKAGE DIMENSIONS in millimeters (inches): SOT-23  
ꢀ.1 (0.122)  
2.8 (0.110)  
0.550 ref. (0.022 ref.)  
0.5 (0.020)  
0.ꢀ (0.012)  
0.45 (0.018)  
0.ꢀ5 (0.014)  
0.45 (0.018)  
0.ꢀ5 (0.014)  
2.6 (0.102)  
2.ꢀ5 (0.09ꢀ)  
0.45 (0.018)  
0.ꢀ5 (0.014)  
Foot print recommendation:  
0.7 (0.028)  
1 (0.0ꢀ9)  
0.9 (0.0ꢀ5)  
1 (0.0ꢀ9)  
0.9 (0.0ꢀ5)  
0.95 (0.0ꢀ7)  
0.95 (0.0ꢀ7)  
Document no.: 6.541-5014.01-4  
Rev. 8 - Date: 2ꢀ.Sept.2009  
17418  
www.vishay.com  
10  
For technical questions, contact: ESDprotection@vishay.com  
Document Number: 85824  
Rev. 2.0, 22-Jul-10  
SOT-23  
Vishay Semiconductors  
SOT-23  
PACKAGE DIMENSIONS in millimeters (inches)  
3.1 (0.122)  
2.8 (0.110)  
0.550 ref. (0.022 ref.)  
0.5 (0.020)  
0.3 (0.012)  
0.45 (0.018)  
0.35 (0.014)  
0.45 (0.018)  
0.35 (0.014)  
2.6 (0.102)  
2.35 (0.093)  
0.45 (0.018)  
0.35 (0.014)  
Foot print recommendation:  
0.7 (0.028)  
1 (0.039)  
0.9 (0.035)  
1 (0.039)  
0.9 (0.035)  
0.95 (0.037)  
0.95 (0.037)  
Document no.: 6.541-5014.01-4  
Rev. 8 - Date: 23.Sept.2009  
17418  
Document Number: 84004  
Rev. 1.3, 01-Jul-10  
For technical questions within your region, please contact one of the following:  
Diodes Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
28  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1
配单直通车
GSOT15C-GS08产品参数
型号:GSOT15C-GS08
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Obsolete
IHS 制造商:VISHAY SEMICONDUCTORS
包装说明:R-PDSO-G3
针数:3
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.10.00.50
风险等级:5.7
Is Samacsys:N
最小击穿电压:16.5 V
最大钳位电压:35 V
配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-G3
JESD-609代码:e3
最大非重复峰值反向功率耗散:400 W
元件数量:2
端子数量:3
最高工作温度:125 °C
最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性:BIDIRECTIONAL
认证状态:Not Qualified
最大重复峰值反向电压:15 V
子类别:Transient Suppressors
表面贴装:YES
技术:AVALANCHE
端子面层:Matte Tin (Sn)
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:10
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