GSOT36C-GS08全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

GSOT03C to GSOT36C

Vishay Semiconductors

Two-Line ESD-Protection in SOT-23

FEATURES

• Two-line ESD-protection device

1

2

• ESD-protection acc. IEC 61000-4-2

ꢀ0 kV contact discharge

ꢀ0 kV air discharge

3

• Space saving SOT-2ꢀ package

• AEC-Q101 qualified

• eꢀ - Sn

20456

20512

1

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

MARKING (example only)

YYY

20357

YYY = type code (see table below)

XX = date code

ORDERING INFORMATION

ENVIRONMENTAL

STATUS

TAPED UNITS PER REEL

(8 mm TAPE ON 7" REEL)

MINIMUM ORDER

QUANTITY

DEVICE NAME

GSOT0ꢀC

GSOT04C

GSOT05C

GSOT08C

GSOT12C

GSOT15C

GSOT24C

GSOTꢀ6C

ORDERING CODE

Standard

Green

GSOT0ꢀC-GS08

GSOT0ꢀC-V-G-08

GSOT04C-GS08

GSOT04C-V-G-08

GSOT05C-GS08

GSOT05C-V-G-08

GSOT08C-GS08

GSOT08C-V-G-08

GSOT12C-GS08

GSOT12C-V-G-08

GSOT15C-GS08

GSOT15C-V-G-08

GSOT24C-GS08

GSOT24C-V-G-08

GSOTꢀ6C-GS08

GSOTꢀ6C-V-G-08

ꢀ000

15 000

Standard

Green

Standard

Green

Standard

Green

Standard

Green

Standard

Green

Standard

Green

Standard

Green

** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902

Document Number: 85824

Rev. 2.0, 22-Jul-10

For technical questions, contact: ESDprotection@vishay.com

www.vishay.com

1

GSOT03C to GSOT36C

Two-Line ESD-Protection in SOT-2ꢀ

Vishay Semiconductors

PACKAGE DATA

MOLDING

DEVICE

NAME

PACKAGE

NAME

TYPE

CODE

ENVIRONMENTAL

STATUS

COMPOUND

FLAMMABILITY SENSITIVITY LEVEL

RATING

MOISTURE

SOLDERING

CONDITIONS

WEIGHT

0ꢀC

C1G

04C

C8G

05C

C2C

08C

CꢀG

12C

C4G

15C

C5G

24C

C6G

ꢀ6C

C7G

Standard

Green

8.8 mg

8.1 mg

8.8 mg

8.1 mg

8.8 mg

8.1 mg

8.8 mg

8.1 mg

8.8 mg

8.1 mg

8.8 mg

8.1 mg

8.8 mg

8.1 mg

8.8 mg

8.1 mg

MSL level 1

UL 94 V-0

GSOT0ꢀC

GSOT04C

GSOT05C

GSOT08C

GSOT12C

GSOT15C

GSOT24C

GSOTꢀ6C

SOT-2ꢀ

260 °C/10 s at terminals

(according J-STD-020)

Standard

Green

MSL level 1

UL 94 V-0

(according J-STD-020)

Standard

Green

MSL level 1

UL 94 V-0

(according J-STD-020)

Standard

Green

MSL level 1

UL 94 V-0

(according J-STD-020)

Standard

Green

MSL level 1

UL 94 V-0

(according J-STD-020)

Standard

Green

MSL level 1

UL 94 V-0

(according J-STD-020)

Standard

Green

MSL level 1

UL 94 V-0

(according J-STD-020)

Standard

Green

MSL level 1

UL 94 V-0

(according J-STD-020)

ABSOLUTE MAXIMUM RATINGS GSOT03C

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Pin 1 to ꢀ or pin 2 to ꢀ

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

ꢀ0

A

Peak pulse current

I_PPM

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

A

Pin 1 to ꢀ or pin 2 to ꢀ

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

ꢀ69

504

W

Peak pulse power

ESD immunity

P_PP

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses

Junction temperature

ꢀ0

kV

°C

V_ESD

Operating temperature

Storage temperature

T_J

- 40 to + 125

- 55 to + 150

T_STG

ABSOLUTE MAXIMUM RATINGS GSOT04C

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Pin 1 to ꢀ or pin 2 to ꢀ

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

ꢀ0

A

Peak pulse current

I_PPM

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

ꢀ0

A

Pin 1 to ꢀ or pin 2 to ꢀ

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

429

564

W

Peak pulse power

ESD immunity

P_PP

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses

Junction temperature

ꢀ0

kV

°C

V_ESD

Operating temperature

Storage temperature

T_J

- 40 to + 125

- 55 to + 150

T_STG

www.vishay.com

2

For technical questions, contact: ESDprotection@vishay.com

Document Number: 85824

Rev. 2.0, 22-Jul-10

GSOT03C to GSOT36C

Two-Line ESD-Protection in SOT-2ꢀ

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS GSOT05C

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Pin 1 to ꢀ or pin 2 to ꢀ

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

ꢀ0

A

Peak pulse current

I_PPM

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

ꢀ0

A

Pin 1 to ꢀ or pin 2 to ꢀ

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

480

612

W

Peak pulse power

ESD immunity

P_PP

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses

Junction temperature

ꢀ0

kV

°C

V_ESD

Operating temperature

Storage temperature

T_J

- 40 to + 125

- 55 to + 150

T_STG

ABSOLUTE MAXIMUM RATINGS GSOT08C

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Pin 1 to ꢀ or pin 2 to ꢀ

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

18

A

Peak pulse current

I_PPM

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

18

A

Pin 1 to ꢀ or pin 2 to ꢀ

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

ꢀ45

400

W

Peak pulse power

ESD immunity

P_PP

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses

Junction temperature

ꢀ0

kV

°C

V_ESD

Operating temperature

Storage temperature

T_J

- 40 to + 125

- 55 to + 150

T_STG

ABSOLUTE MAXIMUM RATINGS GSOT12C

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Pin 1 to ꢀ or pin 2 to ꢀ

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

12

A

Peak pulse current

I_PPM

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

12

A

Pin 1 to ꢀ or pin 2 to ꢀ

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

ꢀ12

ꢀꢀ7

W

Peak pulse power

ESD immunity

P_PP

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses

Junction temperature

ꢀ0

kV

°C

V_ESD

Operating temperature

Storage temperature

T_J

- 40 to + 125

- 55 to + 150

T_STG

Document Number: 85824

Rev. 2.0, 22-Jul-10

For technical questions, contact: ESDprotection@vishay.com

www.vishay.com

ꢀ

GSOT03C to GSOT36C

Two-Line ESD-Protection in SOT-2ꢀ

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS GSOT15C

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Pin 1 to ꢀ or pin 2 to ꢀ

8

A

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Peak pulse current

I_PPM

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

8

A

Pin 1 to ꢀ or pin 2 to ꢀ

ꢀ45

400

W

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Peak pulse power

ESD immunity

P_PP

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses

Junction temperature

ꢀ0

kV

°C

V_ESD

Operating temperature

Storage temperature

T_J

- 40 to + 125

- 55 to + 150

T_STG

ABSOLUTE MAXIMUM RATINGS GSOT24C

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Pin 1 to ꢀ or pin 2 to ꢀ

5

A

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Peak pulse current

I_PPM

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

5

A

Pin 1 to ꢀ or pin 2 to ꢀ

2ꢀ5

240

W

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Peak pulse power

ESD immunity

P_PP

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses

Junction temperature

ꢀ0

kV

°C

V_ESD

Operating temperature

Storage temperature

T_J

- 40 to + 125

- 55 to + 150

T_STG

ABSOLUTE MAXIMUM RATINGS GSOT36C

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Pin 1 to ꢀ or pin 2 to ꢀ

ꢀ.5

A

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Peak pulse current

I_PPM

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

ꢀ.5

248

252

A

Pin 1 to ꢀ or pin 2 to ꢀ

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

W

Peak pulse power

ESD immunity

P_PP

Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses

Junction temperature

ꢀ0

kV

°C

V_ESD

Operating temperature

Storage temperature

T_J

- 40 to + 125

- 55 to + 150

T_STG

BiAs-MODE (2-line bidirectional asymmetrical protection mode)

With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground

and pin ꢀ connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line

is between 0 V (ground level) and the specified maximum reverse working voltage (V_RWM) the protection diode between pin 1

and pin ꢀ offer a high isolation to the ground line. The protection device behaves like an open switch.

As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode

becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The

clamping voltage (V_C) is defined by the breakthrough voltage (V_BR) level plus the voltage drop at the series impedance

(resistance and inductance) of the protection device.

Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of

the protection diode. The low forward voltage (V_F) clamps the negative transient close to the ground level.

Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is bidirectional and

asymmetrical (BiAs).

www.vishay.com

4

For technical questions, contact: ESDprotection@vishay.com

Document Number: 85824

Rev. 2.0, 22-Jul-10

GSOT03C to GSOT36C

Two-Line ESD-Protection in SOT-2ꢀ

Vishay Semiconductors

L1

L2

2

1

BiAs

ꢀ

Ground

20358

If a higher surge current or peak pulse current (I_PP) is needed, both protection diodes in the GSOTxxC can also be used in

parallel in order to “double” the performance.

This offers:

• double surge power = double peak pulse current (2 x I_PPM

• half of the line inductance = reduced clamping voltage

• half of the line resistance = reduced clamping voltage

• double line capacitance (2 x C_D)

)

• double reverse leakage current (2 x I_R)

L1

2

1

ꢀ

Ground

20ꢀ59

ELECTRICAL CHARACTERISTICS GSOT03C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

2

UNIT

lines

V

Protection paths

Number of lines which can be protected

at I_R= 100 μA

-

ꢀ.ꢀ

-

Reverse working voltage

Reverse current

-

at V_R= ꢀ.ꢀ V

-

100

-

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

4

-

4.6

5.7

10

1

at I_PP= 1 A

7.5

12.ꢀ

1.2

-

V

Reverse clamping voltage

Forward clamping voltage

Capacitance

V_C

V_F

at I_PP= I_PPM= ꢀ0 A

at I_PP= 1 A

-

V

-

V

at I_PP= I_PPM= ꢀ0 A

at V_R= 0 V; f = 1 MHz

at V_R= 1.6 V; f = 1 MHz

-

4.5

420

260

V

-

600

-

pF

C_D

-

Note

•

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)

ELECTRICAL CHARACTERISTICS GSOT04C

PARAMETER

TEST CONDITIONS/REMARKS

Number of lines which can be protected

at I_R= 20 μA

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

UNIT

lines

V

Protection paths

-

4

-

2

-

Reverse working voltage

Reverse current

-

at V_R= 4 V

-

20

-

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

5

-

6.1

7.5

11.2

1

at I_PP= 1 A

9

V

Reverse clamping voltage

Forward clamping voltage

Capacitance

V_C

V_F

at I_PP= I_PPM= ꢀ0 A

at I_PP= 1 A

-

14.ꢀ

1.2

-

V

-

V

at I_PP= I_PPM= ꢀ0 A

at V_R= 0 V; f = 1 MHz

at V_R= 2 V; f = 1 MHz

-

4.5

ꢀ10

200

V

-

450

-

pF

C_D

-

Note

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)

•

Document Number: 85824

Rev. 2.0, 22-Jul-10

For technical questions, contact: ESDprotection@vishay.com

www.vishay.com

5

GSOT03C to GSOT36C

Two-Line ESD-Protection in SOT-2ꢀ

Vishay Semiconductors

ELECTRICAL CHARACTERISTICS GSOT05C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

2

UNIT

lines

V

Protection paths

Number of lines which can be protected

at I_R= 10 μA

-

5

-

Reverse working voltage

Reverse current

-

at V_R= 5 V

-

10

-

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

6

-

6.8

7

at I_PP= 1 A

8.7

16

1.2

-

V

Reverse clamping voltage

Forward clamping voltage

Capacitance

V_C

V_F

at I_PP= I_PPM= ꢀ0 A

at I_PP= 1 A

-

12

1

V

-

V

at I_PP= I_PPM= ꢀ0 A

at V_R= 0 V; f = 1 MHz

at V_R= 2.5 V; f = 1 MHz

-

4.5

260

150

V

-

ꢀ50

-

pF

C_D

-

Note

•

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)

ELECTRICAL CHARACTERISTICS GSOT08C

PARAMETER

TEST CONDITIONS/REMARKS

Number of lines which can be protected

at I_R= 5 μA

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

UNIT

lines

V

Protection paths

-

8

-

2

-

Reverse working voltage

Reverse current

-

at V_R= 8 V

-

5

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

9

-

10

10.7

15.2

1

-

at I_PP= 1 A

1ꢀ

19.2

1.2

-

V

Reverse clamping voltage

Forward clamping voltage

Capacitance

V_C

V_F

at I_PP= I_PPM= 18 A

at I_PP= 1 A

-

V

-

V

at I_PP= I_PPM= 18 A

at V_R= 0 V; f = 1 MHz

at V_R= 4 V; f = 1 MHz

-

ꢀ

V

-

160

80

250

-

pF

C_D

-

Note

•

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)

ELECTRICAL CHARACTERISTICS GSOT12C

PARAMETER

TEST CONDITIONS/REMARKS

Number of lines which can be protected

at I_R= 1 μA

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

UNIT

lines

V

Protection paths

-

2

-

Reverse working voltage

Reverse current

12

-

at V_R= 12 V

-

1

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

1ꢀ.5

15

15.4

21.2

1

-

at I_PP= 1 A

-

18.7

26

1.2

-

V

Reverse clamping voltage

Forward clamping voltage

Capacitance

V_C

V_F

at I_PP= I_PPM= 12 A

at I_PP= 1 A

V

at I_PP= I_PPM= 12 A

at V_R= 0 V; f = 1 MHz

at V_R= 6 V; f = 1 MHz

2.2

115

50

V

150

-

pF

C_D

Note

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)

•

www.vishay.com

6

For technical questions, contact: ESDprotection@vishay.com

Document Number: 85824

Rev. 2.0, 22-Jul-10

GSOT03C to GSOT36C

Two-Line ESD-Protection in SOT-2ꢀ

Vishay Semiconductors

ELECTRICAL CHARACTERISTICS GSOT15C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

UNIT

lines

V

Protection paths

Number of lines which can be protected

at I_R= 1 μA

-

2

-

Reverse working voltage

Reverse current

15

-

at V_R= 15 V

-

1

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

16.5

18

19.4

24.8

1

-

at I_PP= 1 A

-

2ꢀ.5

28.8

1.2

-

V

Reverse clamping voltage

Forward clamping voltage

Capacitance

V_C

V_F

at I_PP= I_PPM= 8 A

at I_PP= 1 A

V

at I_PP= I_PPM= 8 A

at V_R= 0 V; f = 1 MHz

at V_R= 7.5 V; f = 1 MHz

1.8

90

ꢀ5

V

120

-

pF

C_D

Note

•

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)

ELECTRICAL CHARACTERISTICS GSOT24C

PARAMETER

TEST CONDITIONS/REMARKS

Number of lines which can be protected

at I_R= 1 μA

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

UNIT

lines

V

Protection paths

-

24

-

2

-

Reverse working voltage

Reverse current

-

at V_R= 24 V

-

1

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

27

-

ꢀ0

ꢀ4

41

1

-

at I_PP= 1 A

41

47

1.2

-

V

Reverse clamping voltage

Forward clamping voltage

Capacitance

V_C

V_F

at I_PP= I_PPM= 5 A

at I_PP= 1 A

-

V

-

V

at I_PP= I_PPM= 5 A

at V_R= 0 V; f = 1 MHz

at V_R= 12 V; f = 1 MHz

-

1.4

65

20

V

-

80

-

pF

C_D

-

Note

•

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)

ELECTRICAL CHARACTERISTICS GSOT36C

PARAMETER

TEST CONDITIONS/REMARKS

Number of lines which can be protected

at I_R= 1 μA

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

UNIT

lines

V

Protection paths

-

ꢀ6

-

2

-

Reverse working voltage

Reverse current

-

at V_R= ꢀ6 V

-

1

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

ꢀ9

-

4ꢀ

49

59

1

-

at I_PP= 1 A

60

71

1.2

-

V

Reverse clamping voltage

Forward clamping voltage

Capacitance

V_C

V_F

at I_PP= I_PPM= ꢀ.5 A

at I_PP= 1 A

-

V

-

V

at I_PP= I_PPM= ꢀ.5 A

at V_R= 0 V; f = 1 MHz

at V_R= 18 V; f = 1 MHz

-

1.ꢀ

52

12

V

-

65

-

pF

C_D

-

Note

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)

•

BiSy-MODE (1-line bidirectional symmetrical protection mode)

If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore

pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin ꢀ must not be connected.

Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes

one diode in forward direction and the other one in reverse direction. The clamping voltage (V_C) is defined by the breakthrough

voltage (V_BR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances

(resistances and inductances) of the protection device.

Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional

and symmetrical (BiSy).

Document Number: 85824

Rev. 2.0, 22-Jul-10

For technical questions, contact: ESDprotection@vishay.com

www.vishay.com

7

GSOT03C to GSOT36C

Two-Line ESD-Protection in SOT-2ꢀ

Vishay Semiconductors

L1

BiSy

Ground

20361

ELECTRICAL CHARACTERISTICS GSOT03C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

1

UNIT

lines

V

Protection paths

Number of lines which can be protected

at I_R= 100 μA

-

ꢀ.8

-

Reverse working voltage

Reverse current

-

at V_R= ꢀ.8 V

-

100

-

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

4.5

-

5.ꢀ

7

at I_PP= 1 A

8.4

16.8

ꢀ00

-

V

Reverse clamping voltage

Capacitance

V_C

C_D

at I_PP= I_PPM= ꢀ0 A

at V_R= 0 V; f = 1 MHz

at V_R= 1.6 V; f = 1 MHz

-

14

210

190

V

-

pF

-

Note

•

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)

ELECTRICAL CHARACTERISTICS GSOT04C

PARAMETER

TEST CONDITIONS/REMARKS

Number of lines which can be protected

at I_R= 20 μA

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

UNIT

lines

V

Protection paths

-

4.5

-

1

-

Reverse working voltage

Reverse current

-

at V_R= 4:5 V

-

20

-

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

5.5

-

6.8

7.5

15.7

155

1ꢀ5

at I_PP= 1 A

9

V

Reverse clamping voltage

Capacitance

V_C

C_D

at I_PP= I_PPM= ꢀ0 A

at V_R= 0 V; f = 1 MHz

at V_R= 2 V; f = 1 MHz

-

18.8

225

-

V

-

pF

-

Note

•

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)

ELECTRICAL CHARACTERISTICS GSOT05C

PARAMETER

TEST CONDITIONS/REMARKS

Number of lines which can be protected

at I_R= 10 μA

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

1

UNIT

lines

V

Protection paths

-

5.5

-

Reverse working voltage

Reverse current

-

at V_R= 5.5 V

-

10

-

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

6.5

-

7.5

8.1

17

1ꢀ0

100

at I_PP= 1 A

9.7

20.4

175

-

V

Reverse clamping voltage

Capacitance

V_C

C_D

at I_PP= I_PPM= 18 A

at V_R= 0 V; f = 1 MHz

at V_R= 4 V; f = 1 MHz

-

V

-

pF

-

Note

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)

•

www.vishay.com

8

For technical questions, contact: ESDprotection@vishay.com

Document Number: 85824

Rev. 2.0, 22-Jul-10

GSOT03C to GSOT36C

Two-Line ESD-Protection in SOT-2ꢀ

Vishay Semiconductors

ELECTRICAL CHARACTERISTICS GSOT08C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

UNIT

lines

V

Protection paths

Number of lines which can be protected

at I_R= 5 μA

-

8.5

-

1

-

Reverse working voltage

Reverse current

-

at V_R= 8.5 V

-

5

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

9.5

-

10.7

11.7

18.5

80

-

at I_PP= 1 A

14

22.2

125

-

V

Reverse clamping voltage

Capacitance

V_C

C_D

at I_PP= I_PPM= 18 A

at V_R= 0 V; f = 1 MHz

at V_R= 4 V; f = 1 MHz

-

V

-

pF

-

60

Note

•

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)

ELECTRICAL CHARACTERISTICS GSOT12C

PARAMETER

TEST CONDITIONS/REMARKS

Number of lines which can be protected

at I_R= 1 μA

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

UNIT

lines

V

Protection paths

-

1

-

Reverse working voltage

Reverse current

12.5

-

at V_R= 12.5 V

-

1

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

1ꢀ.5

15.7

16.4

2ꢀ.4

58

-

at I_PP= 1 A

-

19.7

28.1

75

-

V

Reverse clamping voltage

Capacitance

V_C

C_D

at I_PP= I_PPM= 12 A

at V_R= 0 V; f = 1 MHz

at V_R= 7.5 V; f = 1 MHz

V

pF

ꢀ6

Note

•

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)

ELECTRICAL CHARACTERISTICS GSOT15C

PARAMETER

TEST CONDITIONS/REMARKS

Number of lines which can be protected

at I_R= 1 μA

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

UNIT

lines

V

Protection paths

-

1

-

Reverse working voltage

Reverse current

15.5

-

at V_R= 15.5 V

-

17

-

1

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

18.7

20.4

26.6

45

-

at I_PP= 1 A

24.5

ꢀ0.6

60

-

V

Reverse clamping voltage

Capacitance

V_C

C_D

at I_PP= I_PPM= 8 A

-

V

at V_R= 0 V; f = 1 MHz

at V_R= 7.5 V; f = 1 MHz

-

pF

-

25

Note

•

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)

ELECTRICAL CHARACTERISTICS GSOT24C

PARAMETER

TEST CONDITIONS/REMARKS

Number of lines which can be protected

at I_R= 1 μA

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

UNIT

lines

V

Protection paths

-

1

-

Reverse working voltage

Reverse current

24.5

-

at V_R= 24.5 V

-

1

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

27.5

ꢀ0.7

ꢀ4

40

ꢀꢀ

18

-

at I_PP= 1 A

-

41

48

40

-

V

Reverse clamping voltage

Capacitance

V_C

C_D

at I_PP= I_PPM= 5 A

V

at V_R= 0 V; f = 1 MHz

at V_R= 12 V; f = 1 MHz

pF

Note

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)

•

Document Number: 85824

Rev. 2.0, 22-Jul-10

For technical questions, contact: ESDprotection@vishay.com

www.vishay.com

9

GSOT03C to GSOT36C

Two-Line ESD-Protection in SOT-2ꢀ

Vishay Semiconductors

ELECTRICAL CHARACTERISTICS GSOT36C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

N_channel

V_RWM

I_R

MIN.

TYP.

-

MAX.

UNIT

lines

V

Protection paths

Number of lines which can be protected

at I_R= 1 μA

-

1

-

Reverse working voltage

Reverse current

ꢀ6.5

-

at V_R= ꢀ6.5 V

-

1

μA

V

Reverse breakdown voltage

at I_R= 1 mA

V_BR

ꢀ9.5

4ꢀ.7

50

60

26

10

-

at I_PP= 1 A

-

60

72

ꢀꢀ

-

V

Reverse clamping voltage

Capacitance

V_C

C_D

at I_PP= I_PPM= ꢀ.5 A

at V_R= 0 V; f = 1 MHz

at V_R= 18 V; f = 1 MHz

V

pF

Note

Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)

•

PACKAGE DIMENSIONS in millimeters (inches): SOT-23

ꢀ.1 (0.122)

2.8 (0.110)

0.550 ref. (0.022 ref.)

0.5 (0.020)

0.ꢀ (0.012)

0.45 (0.018)

0.ꢀ5 (0.014)

0.45 (0.018)

0.ꢀ5 (0.014)

2.6 (0.102)

2.ꢀ5 (0.09ꢀ)

0.45 (0.018)

0.ꢀ5 (0.014)

Foot print recommendation:

0.7 (0.028)

1 (0.0ꢀ9)

0.9 (0.0ꢀ5)

1 (0.0ꢀ9)

0.9 (0.0ꢀ5)

0.95 (0.0ꢀ7)

Document no.: 6.541-5014.01-4

Rev. 8 - Date: 2ꢀ.Sept.2009

17418

www.vishay.com

10

For technical questions, contact: ESDprotection@vishay.com

Document Number: 85824

Rev. 2.0, 22-Jul-10

SOT-23

Vishay Semiconductors

SOT-23

PACKAGE DIMENSIONS in millimeters (inches)

3.1 (0.122)

2.8 (0.110)

0.550 ref. (0.022 ref.)

0.5 (0.020)

0.3 (0.012)

0.45 (0.018)

0.35 (0.014)

0.45 (0.018)

0.35 (0.014)

2.6 (0.102)

2.35 (0.093)

0.45 (0.018)

0.35 (0.014)

Foot print recommendation:

0.7 (0.028)

1 (0.039)

0.9 (0.035)

1 (0.039)

0.9 (0.035)

0.95 (0.037)

Document no.: 6.541-5014.01-4

Rev. 8 - Date: 23.Sept.2009

17418

Document Number: 84004

Rev. 1.3, 01-Jul-10

For technical questions within your region, please contact one of the following:

Diodes Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

28

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical

requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements

about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular

product with the properties described in the product specification is suitable for use in a particular application. Parameters

provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All

operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree

to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and

damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay

or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to

obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by

any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 11-Mar-11

www.vishay.com

1

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