GT30J324各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

GT30J324

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT30J324

High Power Switching Applications

Fast Switching Applications

Unit: mm

·

The 4th generation

Enhancement-mode

Fast switching (FS): Operating frequency up to 50 kHz (reference)

High speed: t = 0.05 µs (typ.)

f

Low switching loss: E = 1.00 mJ (typ.)

on

: E = 0.80 mJ (typ.)

off

·

Low saturation voltage: V

= 2.0 V (typ.)

CE (sat)

FRD included between emitter and collector

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

V

600

±20

30

V

CES

GES

JEDEC

―

DC

I

C

JEITA

Collector current

1 ms

A

I

60

CP

TOSHIBA

2-16C1C

DC

I

30

F

Emitter-collector forward

A

Weight: 4.6 g (typ.)

current

1 ms

I

60

FM

Collector power dissipation

(Tc = 25°C)

P

170

W

C

Junction temperature

T

150

°C

j

Storage temperature range

T

−55 to 150

stg

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance (IGBT)

Thermal resistance (diode)

R

0.735

1.90

°C/W

th (j-c)

Equivalent Circuit

Collector

Gate

Emitter

1

2002-04-19

GT30J324

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

I

V

= ±20 V, V = 0

―

±500

1.0

nA

mA

V

GES

GE

CE

Collector cut-off current

= 600 V, V

= 0

CES

GE

Gate-emitter cut-off voltage

Collector-emitter saturation voltage

Input capacitance

V

I

= 3 mA, V = 5 V

3.5

―

6.5

GE (OFF)

C

CE

V

= 30 A, V

= 15 V

GE

2.0

4650

2.45

―

V

CE (sat)

C

ies

V

= 10 V, V = 0, f = 1 MHz

GE

―

pF

CE

Turn-on delay time

Rise time

t

―

0.09

0.07

0.24

0.30

0.05

0.43

―

d (on)

t

r

Turn-on time

t

on

d (off)

Inductive Load

Switching time

µs

V

= 300 V, I = 30 A

C

Turn-off delay time

Fall time

CC

GG

= +15 V, R = 24 Ω

G

t

f

(Note 1)

(Note 2)

Turn-off time

t

off

Turn-on switching

E

―

1.00

0.80

―

on

off

loss

Switching loss

mJ

Turn-off switching

loss

Peak forward voltage

Reverse recovery time

V

I

= 30 A, V = 0

GE

―

3.8

V

F

t

= 30 A, di/dt = −100 A/µs

60

―

ns

rr

Note 1: Switching time measurement circuit and input/output waveforms

V

GE

90%

10%

0

-V

GE

I

L

C

I

V

CC

C

90%

10%

90%

R

G

V

CE

10%

t

d (on)

10%

V

CE

t

d (off)

t

f

t

r

t

off

on

Note 2: Switching loss measurement waveforms

V

GE

90%

10%

0

I

C

V

5%

CE

E

off

on

2

2002-04-19

GT30J324

I

– V

V

– V

CE GE

C

CE

60

50

40

30

20

10

0

20

16

12

8

Common emitter

Tc = −40°C

Common emitter

Tc = 25°C

10

20

15

9

60

30

V

= 8 V

GE

4

I

= 10 A

C

0

1

2

3

4

5

0

4

8

12

16

20

Collector-emitter voltage

V

(V)

Gate-emitter voltage

V

(V)

CE

GE

V

– V

V

– V

CE GE

CE

GE

20

16

12

8

20

16

12

8

Common emitter

Tc = 25°C

Common emitter

Tc = 125°C

30

60

4

I

= 10 A

I

= 10 A

C

0

4

8

12

16

20

0

4

8

12

16

20

Gate-emitter voltage

V

(V)

Gate-emitter voltage

V

(V)

GE

I

– V

V – Tc

CE (sat)

C

GE

60

50

40

30

20

10

0

4

3

2

1

0

Common emitter

= 5 V

Common emitter

V = 15 V

GE

V

CE

60

30

I

= 10 A

C

25

Tc = 125°C

4

−40

0

8

12

16

20

−60

−20

20

60

100

140

Gate-emitter voltage

V

(V)

Case temperature Tc (°C)

GE

3

2002-04-19

GT30J324

Switching time

t

, t , t

– R

Switching time

t

, t , t

– I

d (on) C

on

r

d (on)

G

on

r

10

3

1

Common emitter

V

= 300 V

= 15 V

V

I

= 300 V

= 15 V

CC

GG

R

G

= 24 Ω

= 30 A

3

1

C

: Tc = 25°C

: Tc = 125°C

(Note 1)

: Tc = 125°C

(Note 1)

0.3

0.1

0.3

0.1

t

on

t

on

t

d (on)

t

d (on)

t

r

0.03

0.01

0.03

0.01

t

r

1

3

10

30

100

300

1000

0

5

10

15

20

25

30

Gate resistance

R

(Ω)

Collector current

I

(A)

G

C

Switching time

t

, t , t

f

– R

Switching time

t

, t , t

– I

d (off) C

off

d (off)

G

off

f

10

3

Common emitter

V

= 300 V

= 15 V

V

= 300 V

= 15 V

CC

GG

CC

GG

R

= 24 Ω

3

1

I

= 30 A

G

C

: Tc = 25°C

: Tc = 125°C

(Note 1)

: Tc = 125°C

(Note 1)

1

t

off

t

d (off)

0.3

0.1

0.3

0.1

t

off

d (off)

t

f

t

0.03

0.01

0.03

0.01

t

f

1

3

10

30

100

(Ω)

300

0

5

10

15

20

25

30

Gate resistance

R

Collector current

I

(A)

G

C

Switching loss

E

, E – R

on off

Switching loss

E , E – I

on off C

G

30

10

3

Common emitter

V

= 300 V

= 15 V

CC

GG

E

on

I

= 30 A

C

1

: Tc = 25°C

: Tc = 125°C

(Note 2)

E

on

0.3

0.1

3

1

E

off

Common emitter

E

off

V

= 300 V

= 15 V

CC

GG

0.3

0.1

0.03

0.01

R

= 24 Ω

G

: Tc = 25°C

: Tc = 125°C

(Note 2)

1

3

10

30

100

(Ω)

300

0

5

10

15

20

25

30

Gate resistance

R

Collector current

I

(A)

G

C

4

2002-04-19

GT30J324

C – V

V

, V

– Q

G

CE

CE GE

10000

500

400

300

200

100

0

20

16

12

8

Common emitter

= 10 Ω

Tc = 25°C

R

L

C

ies

3000

1000

200

300

100

300

V

CE

= 100 V

Common emitter

= 0

f = 1 MHz

C

oes

V

GE

4

30

10

C

res

Tc = 25°C

0

0.1

0.3

1

3

10

30

100

300 1000

(V)

0

40

80

120

160

200

Collector-emitter voltage

V

Gate charge

Q

G

(nC)

CE

I

– V

t , I – I

rr rr

F

60

50

40

30

20

10

0

10

1000

Common collector

= 0

V

GE

I

rr

3

1

300

100

t

rr

Common collector

25

0.3

0.1

30

10

di/dt = −100 A/µs

Tc = 125°C

1.2

V

GE

= 0

: Tc = 25°C

−40

2.4

: Tc = 125°C

0

0.6

1.8

3.0

3.6

0

5

10

15

20

25

30

Forward voltage

V

(V)

Forward current

I

F

(A)

F

Safe Operating Area

Reverse Bias SOA

100

30

100

30

I

max (pulsed)*

C

50 µs*

I

max (continuous)

C

100 µs*

1 ms*

10

DC operation

3

1

3

1

*: Single pulse

Tc = 25°C

Curves must be

derated linearly

with increase in

temperature.

0.3

0.1

0.3

0.1

T ≤ 125°C

j

10 ms*

300

V

= 15 V

GE

R

G

= 24 Ω

1

3

10

30

100

1000

1

3

10

30

100

V

300

1000

Collector-emitter voltage

V

(V)

Collector-emitter voltage

(V)

CE

5

2002-04-19

GT30J324

r

th

(t) – t

w

10²

10¹

FRD

10⁰

IGBT

−1

10

−2

−3

10

Tc = 25°C

10¹10²

−4

−5

−4

−3

−2

−1

10

Pulse width

10

10⁰

(s)

t

w

6

2002-04-19

GT30J324

RESTRICTIONS ON PRODUCT USE

000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other

rights of the third parties which may result from its use. No license is granted by implication or otherwise under

any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

7

2002-04-19

型号:	GT30J324
生命周期：	End Of Life
包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.17
其他特性：	HIGH SPEED
外壳连接：	COLLECTOR
最大集电极电流 (IC)：	30 A
集电极-发射极最大电压：	600 V
配置：	SINGLE WITH BUILT-IN DIODE
门极-发射极最大电压：	20 V
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	170 W
认证状态：	Not Qualified
子类别：	Insulated Gate BIP Transistors
表面贴装：	NO
端子面层：	TIN LEAD
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
晶体管应用：	POWER CONTROL
晶体管元件材料：	SILICON
标称断开时间 (toff)：	430 ns
标称接通时间 (ton)：	240 ns
Base Number Matches：	1

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