H-CHIP芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

产品型号H-CHIP的概述

芯片H-CHIP的概述在当今科技迅速发展的时代，芯片作为现代电子设备的核心部件，其技术进步和应用范围不断扩大。H-CHIP作为一种新型集成电路芯片，因其独具的性能及广泛的应用前景而备受关注。H-CHIP的开发旨在满足越来越复杂的计算需求和高效的能量管理，尤其在物联网（IoT）、人工智能（AI）、智能家居和智能医疗等领域显示出巨大的潜力。 H-CHIP集成了多种功能模块，包括处理器核心、内存、以及多种接口。这使得H-CHIP能够在较小的空间内实现强大的计算和控制能力。此外，H-CHIP还支持多种通信协议，如Wi-Fi、蓝牙及Zigbee，使其能够灵活适应不同的应用场景。芯片H-CHIP的详细参数 H-CHIP的具体参数在很大程度上取决于其应用领域和设计要求，以下是一些关键指标： 1. 处理器核心：H-CHIP通常配备高性能的ARM Cortex系列处理器，主频可达到1GHz以上，支持...

产品型号H-HP803-XX的Datasheet PDF文件预览

H-HP803-xx 3W Hexagon Power LED Series

Features

Highest Flux

Very long operating life ( life >> 50000hr )

More Energy Efficient than Incandescent and most Halogen lamps

Low voltage DC operated

Instant light (less than 100 ns)

Superior ESD protection

Package Dimensions

Notes

Drawings not to scale

All dimensions are in millimeters .

Tolerance is ±0.1mm unless otherwise noted.

Protruded resin under flange is 1.0mm max.

Lead spacing is measured where the leads emerge from the package.

Specifications are subject to change without notice.

Precautions for ESD:

STATIC SHIELD Electricity and surge damages the LED. It is recommended to use a wrist band or

anti-electrostatic glove when handling the LED. All devices, equipment and machinery must be

properly grounded

Absolute Maximum Ratings at Ta=25C

Parameter

Symbol

Max

Unit

Power Dissipation

1000

Pulse Forward Current

Forward Current

IPF

700

Reverse Voltage

Operating Temperature Range

Storage Temperature Range

Topr

Tstg

- 40 to +85

- 40 to + 85

Flux Characteristics at 700mA , Junction Temperature, TJ= 25C

Color

Model

Typ.(Lumens)

Angle

White

H-HP803NW

H-HP803WW

H-HP803NB

H-HP803CN

H-HP803PG

H-HP803NO

H-HP803NR

55 lm

120

Warm White

Blue

45 lm

16 lm

Cyan

40 lm

55 lm

Pure

Green

Amber

Red

40 lm

55 lm

Optical Characteristics at 700mA , Junction Temperature, TJ = 25C

CCT / λD

Color

λ/T

Min.

Typ.

Max.

White

Warm White

Blue

5000K

2850K

460nm

490nm

520nm

587nm

620nm

6000K

3300K

470nm

505nm

530nm

590nm

625nm

7000K

3800K

475nm

515nm

540nm

595nm

645nm

0.04

0.05

Cyan

Pure

Green

Amber

Red

Electrical Characteristics at 700mA , Junction Temperature, TJ = 25C

Forward Voltage

Thermal Resistance,

Color

V/T

Min.

Typ.

Max.

Junction To Case

White

Warm White

Blue

3.8 v

3.6 v

2.8 v

4.0 v

3.8 v

3.0 v

4.2 v

3.2 v

-2.0

Cyan

Pure

Green

Amber

Red

Notes

Minimum luminous flux or radiometric power performance guaranteed within published operating

conditions. maintains a tolerance of ±10% on flux and power measurements

Dominant wavelength is derived from the CIE 1931 Chromaticity diagram and represents the

perceived color. maintains a tolerance of± 1 nm for dominant wavelength measurements.

CCT ±5% tester tolerance.

Precautions For Use

ꢀ

Over–current–proof

Customer must apply resistors for protection, otherwise slight voltage shift will cause

big current change Burn out will happen

Typical Electrical / Optical Characteristics Curves

Spectrum Distribution

100

Amber

Blue

Yellow

Green

Pure Blue

Red

Cyan

400 420 440 460 480 500 520 540 560 580 600 620 640 660 680 700 720 740 760

Wavelength (nm)

Spectrum Distribution

Forward Current VS. Forward Voltage

Luminous Intensity VS. Forward Current

1000

125

800

100

Yellow/Red

600

400

Blue/Green

White

200

1.0

2.0

3.0

4.0

5.0

200

400

600

800

1000

Forward Voltage(VF) -Volts

Forward Current IF (mA)

Radiation Diagram

Forward Current VS. Ambient Temperature

20¢X 10¢X 0¢X

1000

30¢X

40¢X

750

Yellow/Red

1.0

0.9

0.8

500

50¢X

60¢X

Blue/Green

White

250

0.7

70¢X

80¢X

90¢X

0.6 0.4 0.2

0 0.1 0.3 0.5

100

150

200

Ambient Temperature (¢CX)

Reliability Test Items and Conditions

No.

Item

Test Conditions

260±5C

Test time

5 sec

Ac⁄Re

0⁄1

Solder Heat

-40C

25C

105C

25C

Temperature Cycle

Thermal Shock

100cycle

20 cycle

0⁄1

30 min

5 min

30 min

5 min

-40C

5 min

105C

5 min

High Temperature Storage

Low Temperature Storage

DC Operating Life

85C

-35C

1000 hrs

0⁄1

I_F700mA

1000 hrs

High Temperature⁄High Humidity

Ta 60C R.H 90 .

Forward Voltage Vf

1000 hrs

Vf_maxIncrease <1.2x

I_{R max}Increase <2x

Iv Decay < 50%

Judgment Criteria

Reverse Current I_R

Luminous Intensity Flux

Note Measurement shall be taken after the tested samples have been returned to normal ambient conditions.

Soldering heat reliability DIP Please refer to the following figure

Soldering heat 260¢ JMax.

245¡ Ó5¢ Jwithin 5 sec

Preheat

¢ J

ROITHNER LASERTECHNIK, A-1040 Vienna, Austria, Wiedner Hauptstrasse 76, Top 9/1

Tel.: +43-1-586 52 43 - 0, Fax.: +43-1-586 52 43 44

e-mail: office@roithner-laser.com

http://www.roithner-laser.com

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产品型号H-HP803-XX的Datasheet PDF文件预览

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