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产品型号H11AA1M的概述

芯片H11AA1M的概述 H11AA1M是一种光耦合器(Optocoupler),其主要功能是实现光电隔离,保护电路不受高压或噪声的影响,并在不同电压或电平之间实现信号传递。光耦合器广泛应用于电源、工业控制、通信设备以及消费电子产品等领域。H11AA1M尤其以其优越的性能和可靠性而受到工程师的喜爱。该芯片利用光传导原理,使用LED作为输入信号,并通过光敏晶体管来接收信号,从而实现信号的隔离与转换。 芯片H11AA1M的详细参数 H11AA1M的主要技术参数如下: 1. 输入部分: - 输入光源:LED - 正向电压(V_F):1.2 – 1.5 V - 正向电流(I_F):较大为20 mA - 光输出强度:最小典型值为10 mA/mW 2. 输出部分: - 输出晶体管最大集电极电压(V_CE):通常在30 V - 最大集电极电流(I_C):可...

产品型号H11AA1M的Datasheet PDF文件预览

September 2009  
H11AA1M, H11AA2M, H11AA3M, H11AA4M  
AC Input/Phototransistor Optocouplers  
Description  
The H11AAXM series consists of two gallium-arsenide  
infrared emitting diodes connected in inverse parallel  
driving a single silicon phototransistor output.  
Features  
Bi-polar emitter input  
Built-in reverse polarity input protection  
Underwriters Laboratory (UL) recognized File  
#E90700, Volume 2  
VDE approved File #102497 (ordering option ‘V’)  
Applications  
AC line monitor  
Unknown polarity DC sensor  
Telephone line interface  
Schematic  
Package Outlines  
1
2
6
BASE  
5 COLL  
3
4 EMITTER  
©2006 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3  
Absolute Maximum Ratings (T =25°C Unless otherwise specified)  
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only.  
Symbol  
Parameter  
Device  
Value  
Units  
TOTAL DEVICE  
T
Storage Temperature  
All  
All  
All  
All  
-40 to +150  
-40 to +100  
260 for 10 sec  
250  
°C  
°C  
STG  
T
Operating Temperature  
Lead Solder Temperature  
OPR  
T
°C  
SOL  
P
mW  
mW/°C  
Total Device Power Dissipation  
Derate Linearly From 25°C  
D
2.94  
EMITTER  
I
Continuous Forward Current  
All  
All  
All  
60  
1.0  
mA  
A
F
I (pk)  
Forward Current – Peak (1µs pulse, 300 pps)  
F
P
120  
1.41  
mW  
LED Power Dissipation  
D
Derate Linearly From 25°C  
mW/°C  
DETECTOR  
I
Continuous Collector Current  
All  
All  
50  
mA  
mW  
C
P
150  
1.76  
Detector Power Dissipation  
Derate linearity from 25°C  
D
mW/°C  
©2006 Fairchild Semiconductor Corporation  
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3  
www.fairchildsemi.com  
2
Electrical Characteristics (T = 25°C Unless otherwise specified.)  
A
Individual Component Characteristics  
Symbol  
EMITTER  
Parameter  
Test Conditions  
Device  
Min.  
Typ.*  
Max. Unit  
V
Input Forward Voltage  
Capacitance  
I = 10mA  
All  
All  
1.17  
80  
1.5  
V
F
F
C
V = 0 V, f = 1.0MHz  
pF  
J
F
DETECTOR  
BV  
Breakdown Voltage  
Collector to Emitter  
I = 1.0mA, I = 0  
All  
30  
100  
V
CEO  
C
F
BV  
BV  
BV  
Collector to Base  
Emitter to Base  
I = 100µA, I = 0  
All  
All  
All  
70  
5
120  
10  
10  
1
V
V
CBO  
EBO  
ECO  
C
F
I = 100µA, I = 0  
E
F
Emitter to Collector  
I = 100µA, I = 0  
7
V
E
F
I
Leakage Current  
Collector to Emitter  
V
= 10 V, I = 0  
H11AA1M  
H11AA3M  
H11AA4M  
50  
nA  
CEO  
CE  
F
H11AA2M  
All  
1
200  
C
Capacitance Collector  
to Emitter  
V
= 0, f = 1MHz  
10  
pF  
CE  
CE  
C
C
Collector to Base  
Emitter to Base  
V
V
= 0, f = 1MHz  
= 0, f = 1MHz  
All  
All  
80  
15  
pF  
pF  
CB  
CB  
EB  
EB  
*Typical values at T = 25°C  
A
Transfer Characteristics  
Symbol Characteristics  
Test Conditions  
Device  
Min.  
Typ.* Max. Units  
CTR  
Current Transfer Ratio,  
Collector to Emitter  
I = 10mA, V = 10V  
H11AA4M  
H11AA3M  
H11AA1M  
H11AA2M  
All  
100  
50  
%
CE  
F
CE  
20  
10  
Current Transfer Ratio,  
Symmetry  
I = 10mA, V = 10V  
.33  
3.0  
F
CE  
(Figure 11)  
V
Saturation Voltage,  
Collector to Emitter  
I = 10mA, I = 0.5mA  
All  
.40  
V
CE(SAT)  
F
CE  
Isolation Characteristics  
Symbol Characteristic  
Test Conditions  
Min.  
Typ.*  
Max.  
Units  
C
Package Capacitance  
Input/Output  
V
= 0, f = 1MHz  
I-O  
0.7  
pF  
I-O  
V
R
Isolation Voltage  
f = 60Hz, t = 1 sec.  
= 500 VDC  
7500  
Vac(pk)  
ISO  
11  
Isolation Resistance  
V
10  
ISO  
I-O  
*Typical values at T = 25°C  
A
©2006 Fairchild Semiconductor Corporation  
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3  
www.fairchildsemi.com  
3
Safety and Insulation Ratings  
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.  
Compliance with the safety ratings shall be ensured by means of protective circuits.  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
Installation Classifications per DIN VDE 0110/1.89  
Table 1  
For Rated Main Voltage < 150Vrms  
For Rated Main voltage < 300Vrms  
Climatic Classification  
I-IV  
I-IV  
55/100/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
CTI  
175  
V
Input to Output Test Voltage, Method b,  
1594  
V
V
PR  
peak  
V
x 1.875 = V , 100% Production Test  
IORM  
PR  
with tm = 1 sec, Partial Discharge < 5pC  
Input to Output Test Voltage, Method a,  
1275  
peak  
V
x 1.5 = V , Type and Sample Test  
PR  
IORM  
with tm = 60 sec, Partial Discharge < 5pC  
Max. Working Insulation Voltage  
Highest Allowable Over Voltage  
External Creepage  
V
850  
6000  
7
V
V
IORM  
peak  
V
IOTM  
peak  
mm  
mm  
mm  
External Clearance  
7
Insulation Thickness  
0.5  
9
RIO  
Insulation Resistance at Ts, V = 500V  
10  
IO  
©2006 Fairchild Semiconductor Corporation  
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3  
www.fairchildsemi.com  
4
Typical Performance Characteristics  
Fig. 2 Normalized CTR vs. Forward Current  
Fig. 1 Input Voltage vs. Input Current  
100  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
T
= 25°C  
T = 25°C  
A
A
Normalized to I = 10mA  
F
80  
60  
V
= 5V  
CE  
40  
20  
0
-20  
-40  
-60  
-80  
-100  
0
5
10  
15  
20  
-2.0  
-1.5  
-1.0  
-0.5  
0.0  
0.5  
1.0  
1.5  
2.0  
I
– FORWARD CURRENT (mA)  
F
V
– INPUT VOLTAGE (V)  
F
Fig. 4 CTR vs. RBE (Unsaturated)  
Fig. 3 Normalized CTR vs. Ambient Temperature  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
V
= 5V  
V
= 5V  
CE  
= 25°C  
CE  
Normalized to I = 10mA, T = 25°C  
T
F
A
A
I
= 10mA  
= 5mA  
F
I
I
= 20mA  
F
F
I
= 10mA  
F
I
= 5mA  
F
I
= 20mA  
F
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
10  
100  
– BASE RESISTANCE (kΩ)  
1000  
R
T
A
– AMBIENT TEMPERATURE (°C)  
BE  
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current  
Fig. 5 CTR vs. RBE (Saturated)  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
100  
V
T
= 0.3V  
T
= 25°C  
CE  
A
= 25°C  
A
10  
1
I
= 20mA  
F
I
= 10mA  
F
I
= 2.5mA  
I = 5mA  
F
F
I
= 5mA  
F
0.1  
I
= 10mA  
I = 20mA  
F
F
0.01  
10  
100  
- BASE RESISTANCE (k Ω)  
1000  
0.001  
R
BE  
0.01  
0.1  
1
10  
I
C
- COLLECTOR CURRENT (mA)  
©2006 Fairchild Semiconductor Corporation  
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3  
www.fairchildsemi.com  
5
Typical Performance Characteristics (Continued)  
Fig. 7 Switching Speed vs. Load Resistor  
Fig. 8 Normalized t vs. R  
on  
BE  
1000  
7
6
5
4
3
2
1
0
I
V
T
= 10mA  
= 10V  
V
I
= 10V  
F
CC  
= 2mA  
CC  
C
= 25°C  
R
T
= 100Ω  
= 25°C  
L
A
T
off  
T
A
100  
10  
1
f
T
on  
T
r
0.1  
10  
100  
R
1000  
10000  
100000  
0.1  
1
10  
100  
- BASE RESISTANCE (k Ω)  
R – LOAD RESISTOR (kΩ)  
BE  
Fig. 10 Dark Current vs. Ambient Temperature  
Fig. 9 Normalized t vs. R  
off  
BE  
10000  
1000  
100  
10  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
I
R
= 10V  
= 2mA  
= 100Ω  
= 25°C  
CC  
C
L
T
A
V
= 30V  
V
= 10V  
CE  
CE  
1
0.1  
0
20  
40  
60  
80  
100  
10  
100  
1000  
10000  
100000  
T
A
– AMBIENT TEMPERATURE (°C)  
R
BE  
– BASE RESISTANCE (kΩ)  
Fig. 11 Output Symmetry Characteristics  
10  
5
I
=
=
- 10mA  
10mA  
F
I
I
I
1
I
F
I
.5  
NORMALIZED TO:  
= 10 V  
V
.1  
CE  
= 10 mA  
I
F
.05  
THE MAXIMUM PEAK  
OUTPUT CURRENT  
WILL BE NO MORE  
THAN THREE TIMES  
THE MINIMUM PEAK  
OUTPUT CURRENT AT  
.01  
.005  
I
= ±10 mA  
F
.01  
.05 .1  
.5  
1
5
10  
V
– COLLECTOR TO EMITTER VOLTAGE (V)  
CE  
©2006 Fairchild Semiconductor Corporation  
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3  
www.fairchildsemi.com  
6
Package Dimensions  
Through Hole  
0.4" Lead Spacing  
8.13–8.89  
6
4
8.13–8.89  
6
4
6.10–6.60  
6.10–6.60  
Pin 1  
1
3
Pin 1  
1
3
5.08 (Max.)  
3.28–3.53  
0.25–0.36  
7.62 (Typ.)  
5.08 (Max.)  
3.28–3.53  
0.25–0.36  
0.38 (Min.)  
2.54–3.81  
2.54 (Bsc)  
0.38 (Min.)  
2.54–3.81  
2.54 (Bsc)  
0.20–0.30  
(0.86)  
15° (Typ.)  
(0.86)  
0.41–0.51  
0.76–1.14  
0.20–0.30  
10.16–10.80  
1.02–1.78  
0.41–0.51  
0.76–1.14  
1.02–1.78  
Surface Mount  
(1.78)  
8.13–8.89  
6
4
(1.52)  
(2.54)  
(7.49)  
6.10–6.60  
8.43–9.90  
(10.54)  
1
3
(0.76)  
Pin 1  
Rcommended Pad Layout  
0.25–0.36  
3.28–3.53  
5.08  
(Max.)  
0.20–0.30  
0.38 (Min.)  
0.16–0.88  
(8.13)  
2.54 (Bsc)  
(0.86)  
0.41–0.51  
0.76–1.14  
1.02–1.78  
Note:  
All dimensions in mm.  
©2006 Fairchild Semiconductor Corporation  
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3  
www.fairchildsemi.com  
7
Ordering Information  
Order Entry Identifier  
(Example)  
Option  
Description  
No option  
H11AA1M  
H11AA1SM  
Standard Through Hole Device  
Surface Mount Lead Bend  
Surface Mount; Tape and Reel  
0.4" Lead Spacing  
S
SR2  
T
H11AA1SR2M  
H11AA1TM  
V
H11AA1VM  
VDE 0884  
TV  
H11AA1TVM  
H11AA1SVM  
H11AA1SR2VM  
VDE 0884, 0.4" Lead Spacing  
VDE 0884, Surface Mount  
VDE 0884, Surface Mount, Tape and Reel  
SV  
SR2V  
Marking Information  
1
2
H11AA1  
V X YY Q  
6
5
3
4
Definitions  
1
2
3
Fairchild logo  
Device number  
VDE mark (Note: Only appears on parts ordered with VDE  
option – See order entry table)  
4
5
6
One digit year code, e.g., ‘3’  
Two digit work week ranging from ‘01’ to ‘53’  
Assembly package code  
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that  
are marked with date code ‘325’ or earlier are marked in portrait format.  
©2006 Fairchild Semiconductor Corporation  
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3  
www.fairchildsemi.com  
8
Carrier Tape Specification  
12.0 ± 0.1  
2.0 ± 0.05  
4.5 ± 0.20  
Ø1.5 MIN  
1.75 ± 0.10  
0.30 ± 0.05  
4.0 ± 0.1  
11.5 ± 1.0  
24.0 ± 0.3  
9.1 ± 0.20  
21.0 ± 0.1  
Ø1.5 ± 0.1/-0  
10.1 ± 0.20  
0.1 MAX  
User Direction of Feed  
Reflow Profile  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
260°C  
>245°C = 42 Sec  
Time above  
183°C = 90 Sec  
°C  
1.822°C/Sec Ramp up rate  
60  
40  
33 Sec  
20  
0
0
60  
120  
180  
270  
360  
Time (s)  
©2006 Fairchild Semiconductor Corporation  
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3  
www.fairchildsemi.com  
9
TRADEMARKS  
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not  
intended to be an exhaustive list of all such trademarks.  
PowerTrench®  
PowerXS™  
The Power Franchise®  
Auto-SPM  
Build it Now™  
CorePLUS™  
CorePOWER™  
CROSSVOLT™  
CTL™  
Current Transfer Logic™  
EcoSPARK®  
EfficentMax™  
EZSWITCH™*  
™*  
F-PFS™  
FRFET®  
Global Power ResourceSM  
Green FPS™  
Green FPSe-Series™  
Gmax™  
GTO™  
IntelliMAX™  
ISOPLANAR™  
MegaBuck™  
MICROCOUPLER™  
MicroFET™  
Programmable Active Droop™  
QFET®  
TinyBoost™  
TinyBuck™  
QS™  
Quiet Series™  
RapidConfigure™  
TinyLogic®  
TINYOPTO™  
TinyPower™  
TinyPWM™  
Saving our world, 1mW/W/kW at a time™  
SmartMax™  
TinyWire™  
TriFault Detect™  
TRUECURRENT*  
µSerDes™  
SMART START™  
SPM®  
®
MicroPak™  
MillerDrive™  
MotionMax™  
Motion-SPM™  
OPTOLOGIC®  
STEALTH™  
SuperFET™  
SuperSOT-3  
SuperSOT-6  
SuperSOT-8  
SupreMOS™  
SyncFET™  
Fairchild®  
Fairchild Semiconductor®  
FACT Quiet Series™  
FACT®  
UHC®  
Ultra FRFET™  
UniFET™  
VCX™  
VisualMax™  
XS™  
OPTOPLANAR®  
FAST®  
®
FastvCore™  
FETBench™  
PDP SPM™  
Power-SPM™  
Sync-Lock™  
FlashWriter®  
®
*
*
FPS™  
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR  
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE  
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,  
WHICH COVERS THESE PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE  
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are  
intended for surgical implant into the body or (b) support or sustain life,  
and (c) whose failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be reasonably  
expected to result in a significant injury of the user.  
2. A critical component in any component of a life support, device, or  
system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or system, or to affect its  
safety or effectiveness.  
ANTI-COUNTERFEITING POLICY  
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,  
under Sales Support.  
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.  
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,  
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of  
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are  
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have  
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.  
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide  
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our  
customers to do their part in stopping this practice by buying direct or from authorized distributors.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification Product Status  
Definition  
Datasheet contains the design specifications for product development. Specifications may change in  
any manner without notice.  
Advance Information  
Preliminary  
Formative / In Design  
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild  
Semiconductor reserves the right to make changes at any time without notice to improve design.  
First Production  
Full Production  
Not In Production  
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes  
at any time without notice to improve the design.  
No Identification Needed  
Obsolete  
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.  
The datasheet is for reference information only.  
Rev. I40  
©2006 Fairchild Semiconductor Corporation  
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3  
www.fairchildsemi.com  
10  
配单直通车
H11AA1M产品参数
型号:H11AA1M
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
包装说明:DIP-6
Reach Compliance Code:compliant
HTS代码:8541.40.80.00
风险等级:5.35
Coll-Emtr Bkdn Voltage-Min:80 V
配置:SINGLE
当前传输比率-最小值:20%
标称电流传输比:20%
最大暗电源:50 nA
最大正向电流:0.06 A
最大正向电压:1.5 V
最大绝缘电压:5000 V
安装特点:THROUGH HOLE MOUNT
元件数量:1
最高工作温度:100 °C
最低工作温度:-55 °C
光电设备类型:AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散:0.15 W
最长响应时间:0.00001 s
子类别:Optocoupler - Transistor Outputs
表面贴装:NO
Base Number Matches:1
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