H11D1M芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号H11D1M的概述

芯片H11D1M的概述 H11D1M是一款常用的光耦合器（光隔离器），广泛应用于电子电路中以实现信号传输和隔离。光耦合器通常由发光二极管（LED）和光敏接收器（如光电晶体管或光电二极管）组成。H11D1M采用封装形式，允许在不直接接触的情况下传递信息，确保电路的安全性和可靠性。该芯片特别适合用于高压环境下的数字信号传输，起到隔离、保护和转换信号的作用。芯片H11D1M的详细参数芯片H11D1M的关键参数包括工作温度范围、输入和输出电流、隔离电压等。其具体参数如下： - 工作温度范围：-40°C 至 +100°C - 输入电流：20 mA起始，最大值通常在50 mA - 输出电流：50 mA（集电极电流） - 隔离电压：5000 Vrms，确保高压和低压电路之间有效隔离 - 传输延迟时间：通常在1 ms以内，适用于大多数控制应用 - 传输增益：典型值为1000，因此其信号在传递过程中...

产品型号H11D1M的Datasheet PDF文件预览

September 2007

H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M

High Voltage Phototransistor Optocouplers

Features

General Description

■ High voltage:

The H11DXM, 4N38M and MOC8204M are photo-

transistor-type optically coupled optoisolators. A gallium

arsenide infrared emitting diode is coupled with a high

voltage NPN silicon phototransistor. The device is sup-

plied in a standard plastic six-pin dual-in-line package.

– MOC8204M, BV

= 400V

CER

– H11D1M, H11D2M, BV

= 300V

CER

– H11D3M, BV

= 200V

CER

■ High isolation voltage:

– 7500 V peak, 1 second

■ Underwriters Laboratory (UL) recognized

File # E90700, Volume 2

Applications

■ Power supply regulators

■ Digital logic inputs

■ Microprocessor inputs

■ Appliance sensor systems

■ Industrial controls

Schematic

ANODE

CATHODE

N/C

6 BASE

COLLECTOR

EMITTER

H11DXM, 4N38M, MOC8204M Rev. 1.0.2

www.fairchildsemi.com

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol

Parameter

Device

Value

Units

TOTAL DEVICE

Storage Temperature

All

-55 to +150

-40 to +100

260 for 10 sec

260

°C

STG

Operating Temperature

OPR

Lead Solder Temperature (Wave Solder)

°C

SOL

Total Device Power Dissipation @ T = 25°C

mW/°C

3.5

Derate Above 25°C

EMITTER

(1)

All

6.0

3.0

Forward DC Current

(1)

Reverse Input Voltage

(1)

I (pk)

Forward Current – Peak (1µs pulse, 300pps)

(1)

150

LED Power Dissipation @ T = 25°C

1.41

mW/°C

Derate Above 25°C

DETECTOR

Power Dissipation @ T = 25°C

All

300

4.0

400

300

200

mW/°C

Derate linearly above 25°C

(1)

Collector to Emitter Voltage

MOC8204M

H11D1M, H11D2M

H11D3M

CER

CBO

ECO

4N38M

(1)

Collector Base Voltage

MOC8204M

H11D1M, H11D2M

H11D3M

400

300

200

4N38M

(1)

Emitter to Collector Voltage

H11D1M, H11D2M,

H11D3M,

MOC8204M

Collector Current (Continuous)

All

100

Note:

1. Parameters meet or exceed JEDEC registered data (for 4N38M only).

H11DXM, 4N38M, MOC8204M Rev. 1.0.2

www.fairchildsemi.com

Electrical Characteristics ^(T= 25°C unless otherwise specified.)

Individual Component Characteristics

Symbol

Characteristic

Test Conditions

Device

Min.

Typ.* Max. Unit

EMITTER

(2)

Forward Voltage

I = 10mA

All

1.15

-1.8

1.5

∆V

Forward Voltage

Temp. Coefﬁcient

mV/°C

∆T

Reverse Breakdown

Voltage

= 10µA

All

Junction Capacitance V = 0V, f = 1MHz

µA

V = 1V, f = 1MHz

Reverse Leakage

= 6V

All

0.05

(2)

Current

DETECTOR

Breakdown Voltage

Collector to Emitter

= 1MΩ, I = 1.0mA, I = 0

MOC8204M

H11D1M/2M

H11D3M

4N38M

400

300

200

CER

(2)

No RBE, I = 1.0mA

CEO

CBO

(2)

Collector to Base

= 100µA, I = 0

MOC8204M

H11D1M/2M

H11D3M

4N38M

400

300

200

Emitter to Base

= 100µA, I = 0

4N38M

EBO

Emitter to Collector

= 100µA, I = 0

All

ECO

Leakage Current

Collector to Emitter

= 300V, I = 0, T = 25°C

MOC8204M

100

250

100

250

100

250

µA

CER

(2)

= 300V, I = 0, T = 100°C

(R = 1MΩ)

= 200V, I = 0, T = 25°C

H11D1M/2M

H11D3M

4N38M

= 200V, I = 0, T = 100°C

= 100V, I = 0, T = 25°C

= 100V, I = 0, T = 100°C

No R , V = 60V, I = 0,

BE CE F

CEO

T = 25°C

Transfer Characteristics (T = 25°C Unless otherwise speciﬁed.)

Symbol

EMITTER

CTR

Characteristics

Test Conditions

Device

Min. Typ.* Max. Units

Current Transfer

Ratio, Collector to

Emitter

I = 10mA, V = 10V,

H11D1M/2M/3M,

MOC8204M

2 (20)

mA (%)

= 1MΩ

I = 10mA, V = 10V

4N38M

(2)

Saturation Voltage

I = 10mA, I = 0.5mA,

H11D1M/2M/3M,

MOC8204M

0.1

0.40

1.0

CE(SAT)

= 1MΩ

I = 20mA, I = 4mA

4N38M

SWITCHING TIMES

Non-Saturated

= 10V, I = 2mA,

All

µs

Turn-on Time

R = 100Ω

Turn-off Time

OFF

*All Typical values at T = 25°C

Note:

2. Parameters meet or exceed JEDEC registered data (for 4N38M only).

H11DXM, 4N38M, MOC8204M Rev. 1.0.2

www.fairchildsemi.com

DC Electrical Characteristics (T = 25°C unless otherwise specified.) (Continued)

Isolation Characteristics

Symbol

Characteristic

Isolation Voltage

Test Conditions

Device

All

Min.

Typ.*

Max.

Units

f = 60Hz, t = 1 sec.

7500

PEAK

ISO

Isolation Resistance

Isolation Capacitance

= 500 VDC

All

Ω

I-O

f = 1MHz

All

0.2

*All Typical values at T = 25°C

H11DXM, 4N38M, MOC8204M Rev. 1.0.2

www.fairchildsemi.com

Typical Performance Curves

1.8

1.7

1.6

1.5

1.4

Normalized to:

= 10 V

= 10 mA

= 10

Ω

= 25˚C

= 50 mA

= 10 mA

= 55˚C

= 25˚C

= 5 mA

1.3

1.2

1.1

1.0

0.1

0.01

= 100˚C

0.1

100

- LED FORWARDCURRENT (mA)

- COLLECTOR VOLTAGE (V)

Fig. 1 LED Forward Voltage vs. Forward Current

Fig. 2 Normalized Output Characteristics

Normalized to:

= 10 V

Normalized to:

= 10 mA

= 10 V

= 10 mA

= 10 Ω

= 25˚C

= 10 Ω

= 25˚C

= 20 mA

= 10 mA

= 5 mA

0.1

0.01

0.1

-60

-40

-20

100

- LED INPUT CURRENT (mA)

T - AMBIENT TEMPERATURE (˚C)

Fig. 3 Normalized Output Current vs. LED Input Current

Fig. 4 Normalized Output Current vs.Temperature

Normalized to:

= 100 V

= 10 V

10000

1000

100

= 10

Ω

= 10 mA

= 25˚C

R = 10

Ω

= 50 mA

= 25˚C

= 300 V

= 100 V

= 50 V

= 10 mA

= 5 mA

-40

0.1

100

110

-60

-20

100

- AMBIENT TEMPERATURE (˚C)

Fig. 5 Normalized Dark Current vs. Ambient Temperature

Fig. 6 Normalized Collector-Base Current vs.Temperature

H11DXM, 4N38M, MOC8204M Rev. 1.0.2

www.fairchildsemi.com

Package Dimensions

Through Hole

Surface Mount

0.350 (8.89)

0.320 (8.13)

0.350 (8.89)

0.320 (8.13)

0.390 (9.90)

0.332 (8.43)

0.260 (6.60)

0.240 (6.10)

0.260 (6.60)

0.240 (6.10)

0.070 (1.77)

0.040 (1.02)

0.070 (1.77)

0.040 (1.02)

0.320 (8.13)

0.014 (0.36)

0.010 (0.25)

0.014 (0.36)

0.010 (0.25)

0.200 (5.08)

0.115 (2.93)

0.200 (5.08)

0.115 (2.93)

0.012 (0.30)

0.008 (0.20)

0.100 (2.54)

0.015 (0.38)

0.025 (0.63)

0.020 (0.51)

0.100 [2.54]

0.020 (0.50)

0.016 (0.41)

15°

0.035 (0.88)

0.006 (0.16)

0.100 (2.54)

0.020 (0.50)

0.016 (0.41)

0.012 (0.30)

0.4" Lead Spacing

Recommended Pad Layout for

Surface Mount Leadform

0.350 (8.89)

0.320 (8.13)

0.070 (1.78)

0.060 (1.52)

0.260 (6.60)

0.240 (6.10)

0.425 (10.79)

0.100 (2.54)

0.305 (7.75)

0.070 (1.77)

0.040 (1.02)

0.014 (0.36)

0.010 (0.25)

0.030 (0.76)

0.200 (5.08)

0.115 (2.93)

0.100 (2.54)

0.015 (0.38)

0.012 (0.30)

0.008 (0.21)

0.100 [2.54]

0.020 (0.50)

0.016 (0.41)

0.425 (10.80)

0.400 (10.16)

Note:

All dimensions are in inches (millimeters).

H11DXM, 4N38M, MOC8204M Rev. 1.0.2

www.fairchildsemi.com

Ordering Information

Order Entry Identiﬁer

(Example)

Option

Description

No option

H11D1M

H11D1SM

Standard Through Hole Device

Surface Mount Lead Bend

Surface Mount; Tape and Reel

0.4" Lead Spacing

SR2

H11D1SR2M

H11D1TM

H11D1VM

VDE 0884

H11D1TVM

H11D1SVM

H11D1SR2VM

VDE 0884, 0.4" Lead Spacing

VDE 0884, Surface Mount

VDE 0884, Surface Mount, Tape and Reel

SR2V

Marking Information

H11D1

V X YY Q

Deﬁnitions

Fairchild logo

Device number

VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

One digit year code, e.g., ‘7’

Two digit work week ranging from ‘01’ to ‘53’

Assembly package code

H11DXM, 4N38M, MOC8204M Rev. 1.0.2

www.fairchildsemi.com

Carrier Tape Speciﬁcations

12.0 ± 0.1

2.0 ± 0.05

4.5 ± 0.20

Ø1.5 MIN

1.75 ± 0.10

0.30 ± 0.05

4.0 ± 0.1

11.5 ± 1.0

24.0 ± 0.3

9.1 ± 0.20

21.0 ± 0.1

Ø1.5 ± 0.1/-0

10.1 ± 0.20

0.1 MAX

User Direction of Feed

Reﬂow Proﬁle

300

280

260

240

220

200

180

160

140

120

100

260°C

>245°C = 42 Sec

Time above

183°C = 90 Sec

°C

1.822°C/Sec Ramp up rate

33 Sec

120

180

270

360

Time (s)

H11DXM, 4N38M, MOC8204M Rev. 1.0.2

www.fairchildsemi.com

TRADEMARKS

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx^®

Power247^®

Green FPS™

Green FPS™ e-Series™

GTO™

i-Lo™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

SuperSOT™-8

POWEREDGE^®

Power-SPM™

PowerTrench^®

Programmable Active Droop™

QFET^®

Build it Now™

CorePLUS™

CROSSVOLT™

CTL™

SyncFET™

The Power Franchise^®

TinyBoost™

TinyBuck™

TinyLogic^®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

µSerDes™

UHC^®

Current Transfer Logic™

EcoSPARK^®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

SMART START™

SPM^®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

Fairchild^®

Fairchild Semiconductor^®

FACT Quiet Series™

FACT^®

MicroPak™

MillerDrive™

Motion-SPM™

OPTOLOGIC^®

FAST^®

OPTOPLANAR^®

FastvCore™

UniFET™

VCX™

FPS™

FRFET^®

PDP-SPM™

Power220^®

Global Power Resource^SM

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE

APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS

PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S

WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,

which, (a) are intended for surgical implant into the body or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in a significant injury of the user.

device, or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary

First Production

Full Production

Not In Production

This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve design.

No Identification Needed

Obsolete

This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve

design.

This datasheet contains specifications on a product that has been

discontinued by Fairchild Semiconductor. The datasheet is printed for

reference information only.

Rev. I31

H11DXM, 4N38M, MOC8204M Rev. 1.0.2

www.fairchildsemi.com

H11D1M相关文章

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H11D1M产品参数

型号:	H11D1M
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	PLASTIC, DIP-6
Reach Compliance Code：	unknown
风险等级：	5.68
其他特性：	UL APPROVED
Coll-Emtr Bkdn Voltage-Min：	300 V
配置：	SINGLE
标称电流传输比：	20%
最大正向电流：	0.08 A
最大绝缘电压：	7500 V
JESD-609代码：	e3
元件数量：	1
最高工作温度：	100 °C
最低工作温度：	-40 °C
光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER
端子面层：	MATTE TIN
Base Number Matches：	1

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