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产品型号H11G2的概述

芯片H11G2的概述 H11G2 是一款广泛应用于光电隔离和信号传输的芯片，其主要功能是将电气信号通过光耦合的方式进行隔离，从而实现安全、稳定的信号传递。该芯片属于光电耦合器（光耦合器）系列产品，通常用于需要电气隔离的场合，例如工业自动化、计算机接口、通信设备等。该芯片包含一个红外发射二极管和一个光敏晶体管，这一结构使得它在输入和输出端之间实现了良好的电气隔离。在正常工作状态下，当输入端施加电压时，红外发射二极管会发出光，驱动与之对称的光敏晶体管进行导通，实现输入信号向输出信号的转变。芯片H11G2的详细参数在分析H11G2的技术参数时，常见的关键参数包括输入电流、输出电压、电气隔离等级等。以下是一些常见的参数： - 输入电流 (IF)：最大允许值通常为20 mA。 - 输出电压 (VCE)：最大集电极-发射极电压可达到30 V。 - 工作温度范围：通常介于-40℃到+85℃。 ...

产品型号H11G2的Datasheet PDF文件预览

Order this document

by H11G1/D

SEMICONDUCTOR TECHNICAL DATA

[CTR = 1000% Min]

GlobalOptoisolator

[CTR = 200% Min]

The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs

optically coupled to silicon photodarlington detectors which have integral

base–emitter resistors. The on–chip resistors improve higher temperature

leakage characteristics. Designed with high isolation, high CTR, high voltage

and low leakage, they provide excellent performance.

*Motorola Preferred Devices

STYLE 1 PLASTIC

•

High CTR, H11G1 & H11G2 — 1000% (@ I = 10 mA), 500% (@ I = 1 mA)

High V

(BR)CEO

, H11G1 — 100 Volts, H11G2 — 80 Volts

To order devices that are tested and marked per VDE 0884 requirements, the

suffix ”V” must be included at end of part number. VDE 0884 is a test option.

Applications

•

Interfacing and coupling systems of different potentials and impedances

Phase and Feedback Controls

STANDARD THRU HOLE

CASE 730A–04

General Purpose Switching Circuits

Solid State Relays

SCHEMATIC

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

INPUT LED

Reverse Voltage

Volts

Forward Current — Continuous

Forward Current — Peak

Pulse Width = 300 µs, 2% Duty Cycle

Amps

LED Power Dissipation @ T = 25°C

120

1.41

mW/°C

PIN 1. ANODE

2. CATHODE

3. N.C.

Derate above 25°C

OUTPUT DETECTOR

Collector–Emitter Voltage

4. EMITTER

5. COLLECTOR

6. BASE

H11G1

H11G2

H11G3

100

Volts

CEO

Emitter–Base Voltage

Volts

EBO

Collector Current — Continuous

150

Detector Power Dissipation @ T = 25°C

Derate above 25°C

150

1.76

mW/°C

TOTAL DEVICE

Total Device Power Dissipation @ T = 25°C

Derate above 25°C

250

2.94

mW/°C

(2)

Operating Junction Temperature Range

–55 to +100

–55 to +150

260

°C

(2)

Storage Temperature Range

stg

Soldering Temperature (10 s)

°C

(1)

Isolation Surge Voltage

(Peak ac Voltage, 60 Hz, 1 sec Duration)

ISO

7500

Vac(pk)

1. Isolation surge voltage is an internal device dielectric breakdown rating.

1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

Preferred devices are Motorola recommended choices for future use and best overall value.

GlobalOptoisolator is a trademark of Motorola, Inc.

REV 1

Motorola Optoelectronics Device Data

Motorola, Inc. 1995

(1)

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

(1)

Typ

Characteristic

INPUT LED

Symbol

Min

Max

Unit

Reverse Leakage Current (V = 3 V)

—

0.05

1.5

—

µA

Volts

Forward Voltage I = 10 mA)

1.1

Capacitance (V = 0 V, f = 1 MHz)

DARLINGTON OUTPUT (T = 25°C and I = 0 unless otherwise noted)

Collector–Emitter Breakdown Current

Volts

(BR)CEO

(BR)CBO

(BR)EBO

(I = 1 mA, I = 0)

H11G1

H11G2

H11G3

100

—

Collector–Base Breakdown Voltage

(I = 100 µA, I = 0)

H11G1

H11G2

H11G3

100

—

Emitter–Base Breakdown Voltage (I = 100 µA, I = 0)

—

Collector–Emitter Dark Current

CEO

= 80 V)

= 80 V, T = 80°C)

= 60 V)

= 60 V, T = 80°C)

H11G1

H11G2

H11G3

—

100

µA

= 30 V)

Capacitance (V

= 10 V, f = 1 MHz)

—

COUPLED (T = 25°C unless otherwise noted)

(2)

(CTR)

Collector Output Current

mA (%)

= 1 V, I = 10 mA)

H11G1, 2

H11G3

100 (1000)

5 (500)

2 (200)

—

= 5 V, I = 1 mA)

Collector–Emitter Saturation Voltage

(I = 1 mA, I = 1 mA)

Volts

CE(sat)

H11G1, 2

H11G3

—

0.75

0.85

1.2

(I = 16 mA, I = 50 mA)

(I = 20 mA, I = 50 mA)

(3,4)

Isolation Surge Voltage

(60 Hz ac Peak, 1 Second)

7500

—

Vac(pk)

Ohms

ISO

(3)

Isolation Resistance (V = 500 Vdc)

(3)

Isolation Capacitance (V = 0 V, f = 1 MHz)

—

SWITCHING (T = 25°C)

Turn–On Time

Turn–Off Time

—

µs

(I = 10 mA, V

= 5 V, R = 100 Ω,

300 µs, f = 30 Hz)

Pulse Width

100

off

1. Always design to the specified minimum/maximum electrical limits (where applicable).

2. Current Transfer Ratio (CTR) = I /I x 100%.

C F

3. For this test, Pins 1 and 2 are common, and Photodarlington Pins 4 and 5 are common.

4. Isolation Surge Voltage, V , is an internal device dielectric breakdown rating.

ISO

Motorola Optoelectronics Device Data

TYPICAL CHARACTERISTICS

100

= 50 mA

= 5 mA

NORMALIZED TO:

= 25

= 5 V

°C

= 1 mA (300

s PULSES)

= 1 mA (300 µs PULSES)

= 5 V

= 1 mA

0.1

= 0.5 mA

0.1

0.01

0.1

100

1000

–60

–40

–20

100

120

140

I , IRED INPUT CURRENT (mA)

T , AMBIENT TEMPERATURE (

°C)

Figure 1. Output Current versus Input Current

Figure 2. Output Current versus Temperature

100

= 50 mA

PULSE ONLY

PULSE OR DC

1.8

= 10 mA

= 2 mA

1.6

1.4

1.2

= 1 mA

= 0.5 mA

= –55

NORMALIZED TO:

= 25

0.1

°C

= 1 mA (300

= 5 V

µs PULSES)

100°C

0.01

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

100

1000

0.2

I , LED FORWARD CURRENT (mA)

Figure 3. Output Current versus

Collector–Emitter Voltage

Figure 4. LED Forward Characteristics

100 k

10 k

1000

100

= 80 V

= 10

Ω

= 100

Ω

R = 1 k

Ω

= 30 V

NORMALIZED TO:

= 10 mA

= 10 V

= 100 OHMS

= 5 V

0.1

100

0.1

+ t , TOTAL SWITCHING SPEED (NORMALIZED)

T , AMBIENT TEMPERATURE (

on off

Figure 5. Collector–Emitter Dark Current

versus Temperature

Figure 6. Input Current versus Total

Switching Speed (Typical Values)

Motorola Optoelectronics Device Data

INTERFACING TTL OR CMOS LOGIC TO 50–VOLT, 1000–OHMS RELAY

FOR TELEPHONY APPLICATIONS

In order to interface positive logic to negative–powered electromechanical relays, a change in voltage level and polarity plus

electrical isolation are required. The H11Gx can provide this interface and eliminate the external amplifiers and voltage divider

networks previously required. The circuit below shows a typical approach for the interface.

TO 1

TO 2

H11Gx

CMOS

5 V

RELAY GROUND

TO 1

TO 2

180

1/4 W

Ω

1000

Ω

–50 V

50 mA

TTL

1N4004

Motorola Optoelectronics Device Data

PACKAGE DIMENSIONS

–A–

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

–B–

Y14.5M, 1982.

STYLE 1:

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION L TO CENTER OF LEAD WHEN

FORMED PARALLEL.

PIN 1. ANODE

2. CATHODE

3. NC

4. EMITTER

5. COLLECTOR

INCHES

MILLIMETERS

F 4 PL

DIM

MIN

MAX

0.350

0.260

0.200

0.020

0.070

0.014

MIN

8.13

6.10

2.93

0.41

1.02

0.25

MAX

8.89

6.60

5.08

0.50

1.77

0.36

6. BASE

0.320

0.240

0.115

0.016

0.040

0.010

–T–

SEATING

0.100 BSC

2.54 BSC

PLANE

J 6 PL

0.008

0.100

0.012

0.150

0.21

2.54

0.30

3.81

0.13 (0.005)

E 6 PL

0.300 BSC

7.62 BSC

D 6 PL

0.015

0.100

0.38

2.54

0.13 (0.005)

CASE 730A–04

ISSUE G

–A–

NOTES:

–B–

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

MILLIMETERS

DIM

MIN

MAX

0.350

0.260

0.200

0.020

0.070

0.014

MIN

8.13

6.10

2.93

0.41

1.02

0.25

MAX

8.89

6.60

5.08

0.50

1.77

0.36

F 4 PL

0.320

0.240

0.115

0.016

0.040

0.010

–T–

SEATING

PLANE

0.100 BSC

2.54 BSC

0.020

0.008

0.006

0.320 BSC

0.332

0.025

0.012

0.035

0.51

0.20

0.16

8.13 BSC

8.43

0.63

0.30

0.88

K 6 PL

0.13 (0.005)

E 6 PL

D 6 PL

0.390

9.90

0.13 (0.005)

*Consult factory for leadform

option availability

CASE 730C–04

ISSUE D

Motorola Optoelectronics Device Data

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

–A–

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION L TO CENTER OF LEAD WHEN

FORMED PARALLEL.

–B–

INCHES

MILLIMETERS

DIM

MIN

MAX

0.350

0.260

0.200

0.020

0.070

0.014

MIN

8.13

6.10

2.93

0.41

1.02

0.25

MAX

8.89

6.60

5.08

0.50

1.77

0.36

0.320

0.240

0.115

0.016

0.040

0.010

F 4 PL

0.100 BSC

2.54 BSC

0.008

0.100

0.400

0.015

0.012

0.150

0.425

0.040

0.21

2.54

0.30

3.81

–T–

SEATING

PLANE

10.16

0.38

10.80

1.02

D 6 PL

0.13 (0.005)

E 6 PL

*Consult factory for leadform

option availability

CASE 730D–05

ISSUE D

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609

INTERNET: http://Design–NET.com

HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola Optoelectronics Device Data

H11G1/D

◊

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H11G2产品参数

型号:	H11G2
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	THOMSON CONSUMER ELECTRONICS
Reach Compliance Code：	unknown
风险等级：	5.74
Is Samacsys：	N
当前传输比率-最小值：	1000%
最大正向电流：	0.06 A
最大正向电压：	1.5 V
最大绝缘电压：	1500 V
安装特点：	THROUGH HOLE MOUNT
元件数量：	1
最大通态电流：	0.15 A
最高工作温度：	100 °C
最低工作温度：	-55 °C
最大功率耗散：	0.25 W
最长响应时间：	0.0001 s
子类别：	Optocoupler - Transistor Outputs
表面贴装：	NO
Base Number Matches：	1

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产品型号H11G2的概述

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