H21A6供应商报价哪里找芯片批发报价原理和应用中文资料-中国IC网-芯三七

产品型号H21A6的概述

芯片H21A6的概述 H21A6是一款广泛应用于嵌入式系统和低功耗设备的集成电路芯片。其设计主要针对物联网（IoT）、智能家居以及汽车电子等领域，旨在提供高效能和低功耗解决方案。由于WIFI和蓝牙等无线技术的迅速发展，H21A6应运而生，成为许多现代电子产品的核心组成部分。该芯片广泛采用了先进的制造工艺，以提高集成度、降低功耗、增强处理速度。H21A6采用了多种架构，能够灵活处理不同的应用需求，尤其是在传感器数据的采集和处理方面表现优异。此外，其内置的强大算法支持，使得H21A6在信号处理、数据分析等多方面都有极佳的表现。芯片H21A6的详细参数 H21A6芯片的详细参数如下： - 主频：最高可达120MHz - 数据总线宽度：32位 - 内存支持：支持最大512KB的SRAM和4MB的Flash - I/O端口数量：32个 - 工作电压：1.8V至3.6V - 功耗：待机功耗低至...

产品型号H21A6的Datasheet PDF文件预览

PHOTOTRANSISTOR

OPTICAL INTERRUPTER SWITCH

H21A4

H21A5

H21A6

PACKAGE DIMENSIONS

0.972 (24.7)

0.957 (24.3)

Ø 0.133 (3.4)

0.472 (12.0)

Ø 0.126 (3.2)

0.457 (11.6)

(2X)

C

L

+

D

+

0.249 (6.35)

0.243 (6.15)

C

L

E

0.39 (1.00)

0.34 (0.85)

0.755 (19.2)

0.745 (18.9)

0.129 (3.3)

0.119 (3.0)

0.103 (2.60) NOM

Optical

C

L

0.433 (11.0)

0.422 (10.7)

0.315 (8.0)

SCHEMATIC

0.125 (3.2)

0.119 (3.0)

1

2

4

3

C

L

.295 (7.5)

.272 (6.9)

0.110 (2.8)

0.091 (2.3)

PIN 1 ANODE

PIN 2 CATHODE

PIN 3 COLLECTOR

PIN 4 EMITTER

2

3

4

1

0.020 (0.51) (SQ)

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions

unless otherwise specified.

DESCRIPTION

The H21A series are gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a plastic housing. The

packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and

reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output

from an “ON” to an “OFF” state.

FEATURES

• Opaque housing

• Low cost

• .035” apertures

• High I_C(ON)

2001 Fairchild Semiconductor Corporation

DS300291

6/05/01

1 OF 4

www.fairchildsemi.com

PHOTOTRANSISTOR

OPTICAL INTERRUPTER SWITCH

H21A4

H21A5

H21A6

(T = 25°C unless otherwise specified)

ABSOLUTE MAXIMUM RATINGS

A

Parameter

Operating Temperature

Storage Temperature

Soldering Temperature (Iron)^{(2,3 and 4)}

Soldering Temperature (Flow)^{(2 and 3)}

INPUT (EMITTER)

Symbol

T_OPR

T_STG

T_SOL-I

T_SOL-F

Rating

Unit

°C

-55 to +100

240 for 5 sec

260 for 10 sec

IF

50

mA

Continuous Forward Current

Reverse Voltage

Power Dissipation ⁽¹⁾

V_R

P_D

6

100

V

mW

OUTPUT (SENSOR)

V_CEO

55

V

Collector to Emitter Voltage

Emitter to Collector Voltage

Collector Current

V_ECO

I_C

P_D

4.5

20

150

V

mA

mW

Power Dissipation (T_C= 25°C)⁽¹⁾

NOTE:

1. Derate power dissipation linearly 1.67 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron tip 1/16” (1.6mm) minimum from housing.

(TA =25°C) (All measurements made under pulse conditions)

ELECTRICAL / OPTICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

SYMBOL

DEVICES

MIN

TYP

MAX

UNITS

INPUT (EMITTER)

Forward Voltage

I_F= 60 mA

V^F

All

—

1.7

V

Reverse Breakdown Voltage

Reverse Leakage Current

OUTPUT (SENSOR)

Emitter to Collector Breakdown

Collector to Emitter Breakdown

Collector to Emitter Leakage

COUPLED

I_R= 10 µA

V_R= 3 V

V_R

I_R

6.0

—

1.0

µA

All

I_F= 100 µA, Ee = 0

BV_ECO

All

6.0

—

V

I_C= 1 mA, Ee = 0

V_CE= 45 V, Ee = 0

BV_CEO

I_CEO

55

—

0.15

—

100

—

V

nA

All

H21A4

H21A5

H21A6

H21A4

H21A5

H21A6

H21A4

H21A5

H21A6

H21A5/6

H21A4

All

I_F= 5 mA, V_CE= 5 V

I_F= 20 mA, V_CE= 5 V

I_F= 30 mA, V_CE= 5 V

0.30

0.60

1.0

2.0

4.0

1.9

3.0

5.5

On-State Collector Current

I_C(ON)

mA

I_F= 20 mA, I_C= 1.8 mA

I_F= 30 mA, I_C= 1.8 mA

I_F= 30 mA, V_CC= 5 V, R_L= 2.5 KΩ

—

8

0.40

—

V

µs

Saturation Voltage

V^CE(SAT)

Turn-On Time

Turn-Off Time

t_on

t_off

50

—

µs

All

www.fairchildsemi.com

2 OF 4

6/05/01 DS300291

PHOTOTRANSISTOR

OPTICAL INTERRUPTER SWITCH

H21A4

H21A5

H21A6

TYPICAL PERFORMANCE CURVES

Figure 2. Output Current vs. Temperature

Figure 1. Output Current vs. Input Current

10

8

10

8

6

NORMALIZED TO

INPUT PULSED

V

= 1.5 V,

I

= 5 mA, T = 25 °C

F A

CE

6

4

I

= 100 mA

F

I

= 60 mA

F

2

1

.8

.6

2

I

= 30 mA

= 20 mA

F

I

.4

NORMALIZED TO

1

F

I

= 20 mA

F

.8

.2

V

CE

= 5 V

.6

.4

PULSED

P

I

= 10 mA

F

.1

= 100 µsec

W

.08

PRR

= 100 pps

.06

.04

.2

.1

I

= 5 mA

80

F

.02

.01

-55

-40

-20

0

T , AMBIENT TEMPERATURE (

A

20

40

60

C)

100

1

2

4

6

8

10

20

40

60 80 100

200

400 600

1000

°

I

, INPUT CURRENT (mA)

F

Figure 4. Leakage Current vs. Temperature

DETECTOR EMITTER

Figure 3. V

vs. Temperature

CE(SAT)

3

10

I

1.8 mA

20 mA

C

F

NORMALIZED TO

=

I

1.8 mA

C

, T = 25°C

=

2

A

I

30 mA

2

F

I

3.6 mA

60 mA

10

C

F

V

= 45 V

CE

PULSED

PW = 100 µs, PRR = 100 pps

I

V

= 10 V

CE

1

10

1

I

1.8 mA

C

F

=

I

30 mA

0.8

1

I

0.9 mA

15 mA

C

F

NORMALIZED TO

= 45 V

NORMALIZED TO

=

I

V

= 5 V

CE

T

= 25

°C

T

= 25

°C

0.6

A

0.1

25

50

75

100

25

50

75

100

C)

-50

-25

0

25

50

75

100

T

, AMBIENT TEMPERATURE (

°

C)

T , AMBIENT TEMPERATURE (°

A

T

, AMBIENT TEMPERATURE (

°

C)

A

Figure 6. Output Current vs. Distance

d, DISTANCE (mils)

Figure 5. Switching Speed vs. RL

78.7

157.5

236.2

315

393.7

4.5

1.00

4

PW = 300 µs

3

PRR = 100 pps

7.5

t

on

.1

I

=

AMPS, V = 5V

NORMALIZED

TO VALUE WITH

SHIELD

F

CC

R

L

t

off

NORMALIZED TO

= 2.5 KΩ

2

R

L

REMOVED

BLACK

SHIELD

1.5

.01

.001

+

E

D

+

d

o

BLACK

SHIELD

1

.9

R

L

d

o

+

.8

.7

I_F

V

CC

.6

.5

.45

.0001

1K

2K

3K

4K

5K

6K

7K 8K 9K 10K

0

2

4

6

8

10

R

, LOAD RESISTANCE (Ω)

d, DISTANCE (mm)

L

DS300291

6/05/01

3 OF 4

www.fairchildsemi.com

PHOTOTRANSISTOR

OPTICAL INTERRUPTER SWITCH

H21A4

H21A5

H21A6

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO

ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME

ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF

OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD

SEMICONDUCTOR CORPORATION. As used herein:

2. A critical component in any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical

implant into the body,or (b) support or sustain life,

and (c) whose failure to perform when properly

used in accordance with instructions for use provided

in labeling, can be reasonably expected to result in a

significant injury of the user.

www.fairchildsemi.com

4 OF 4

6/05/01 DS300291

H21A6相关产品

H21AC648 H21B1 H21B1-0088K H21B1-LF H21B1_0088K H21B2 H21B2-0218 H21B224K H21B3 H21B3-0088K H21B4 H21B5 H21B6 H21CG1 H21CG1R2 H21E H21K H21L0B H21L0I H21L1 H21LO1 H21LOB H21LOI H21LOI-LF h21ltb H21LTI H21LW21H6Q579 H21P-SHF-AA H21UL H22 H22-6A-1 H220 H2200NFB H22013FB0314

型号:	H21A6
生命周期：	Transferred
IHS 制造商：	GENERAL ELECTRIC SOLID STATE
Reach Compliance Code：	unknown
风险等级：	5.58
Is Samacsys：	N
Base Number Matches：	1

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