NPN S I L I C O N T R A N S I S T O
Shantou Huashan Electronic Devices Co.,Ltd.
H5609
█ APPLICATIONS
AUDIO AMPLIFICATION
TO-92
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃
Tstg——Storage Temperature………………………… -55~150℃
T ——Junction Temperature…………………………………150℃
Tjj——Junction Temperature…………………………………150℃
P ——Collector Dissipation…………………………………750mW
PCC——Collector Dissipation…………………………………750mW
1―Emitter,E
2―Collector,C
3― Base,B
VCBO——Collector-Base Voltage………………………………-25V
VCBO——Collector-Base Voltage………………………………25V
VCEO——Collector-Emitter Voltage……………………………-20V
VCEO——Collector-Emitter Voltage……………………………20V
VEBO——Emitter-Base Voltage………………………………-5V
VEBO——Emitter-Base Voltage………………………………5V
I ——Collector Current……………………………………-1A
ICC——Collector Current……………………………………1A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Min
Typ
Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
25
20
5
V
V
V
IC=10μA, IE=0
IC=1mA, IB=0
IE=10μA,IC=0
1 μA VCB=20V, IE=0
HFE
DC Current Gain
60
240
VCE=2V, IC=500mA
IC=800mA, IB=80mA
VCE=2V, IC=500mA
VCE(sat)
VBE(ON)
fT
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
0.2 0.5 V
0.7 1
180
V
MHz VCE=2V, IC=500mA
pF VCB=10V, IE=0,f=1MHz
Cob
22
█ hFE Classification
A
B
C
60—120
85—170
120—240