HA2-2520/883全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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产品型号HA2-2520/883的概述

芯片HA2-2520/883的概述 HA2-2520/883是一款为高可靠性应用设计的集成电路，广泛应用于航天、军用和工业设备中。该芯片凭借其卓越的性能和耐用性，成为许多关键系统中的核心组件。HA2-2520/883的目的是在恶劣环境中保持良好的工作状态，其设计遵循了严格的标准，以确保长期可靠性的表现。 HA2-2520/883属于运算放大器系列，适用于各种信号处理应用。它特有的高增益、低噪声特性使得它在精密测量和数据采集系统中发挥重要作用。尤其在要求高线性度和高带宽的系统中，HA2-2520/883提供了合适的解决方案，是工程师们青睐的组件之一。芯片HA2-2520/883的详细参数 HA2-2520/883在多个方面具有卓越的性能，其主要参数包括以下几点： 1. 封装类型：HA2-2520/883通常采用DIP或SOIC封装，方便在各种电路板上的安装。 2. 增益带宽积：此芯片的...

产品型号HA2-2520/883的Datasheet PDF文件预览

HA-2520/883

Data Sheet

October 11, 2004

FN3735.3

Uncompens ated, High Slew Rate

Operational Amplifier

Features

• This Circuit is Processed in Accordance to MIL-STD-883

and is Fully Conformant Under the Provisions of

Paragraph 1.2.1.

The HA-2520/883 is a monolithic operational amplifier which

delivers an unsurpassed combination of specifications for

slew rate, bandwidth and settling time. This dielectrically

isolated amplifier is designed for closed loop gains of 3 or

greater without external compensation. In addition, this high

performance component also provides low offset current and

high input impedance.

• High Slew Rate . . . . . . . . . . . . . . . . . . . . . .100V/µs (Min)

120V/µs (Min)

• Wide Power Bandwidth . . . . . . . . . . . . . . . . 1.5MHz (Min)

• Wide Gain Bandwidth. . . . . . . . . . . . . . . . . . .10MHz (Min)

20MHz (Typ)

The 100V/µs (min) slew rate and fast settling time of this

amplifier make it ideal for pulse amplification and data

acquisition designs. To insure compliance with slew rate and

transient response specifications, the device is 100% tested

for AC performance characteristics over full temperature.

This device is a valuable component for RF and video

circuitry requiring wideband operation. For accurate signal

conditioning designs, the HA-2520/883’s superior dynamic

specifications are complemented by 25nA (max) offset

current and offset voltage adjust capability.

• High Input Impedance . . . . . . . . . . . . . . . . . . 50MΩ (Min)

100MΩ (Typ)

• Low Offset Current. . . . . . . . . . . . . . . . . . . . . . 25nA (Min)

10nA (Typ)

• Fast Settling (0.1% of 10V Step) . . . . . . . . . . 200ns (Typ)

• Low Quiescent Supply Current . . . . . . . . . . . . 6mA (Max)

Pinout

HA-2520/883

(METAL CAN)

TOP VIEW

Part Number Information

PART

NUMBER

TEMP. RANGE

( C)

PACKAGE

PKG. NO.

COMP

HA2-2520/883

-55 C to +125 C

8 Pin Can

T8.C

BAL

V+

Applications

OUT

-IN

• Data Acquisition Systems

• RF Amplifiers

BAL

+IN

• Video Amplifiers

V-

• Signal Generators

• Pulse Amplification

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

HA-2520/883

Absolute Maximum Ratings

Thermal Information

Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . .40V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V

Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . V+ to V-

Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Thermal Resistance

Metal Can Package. . . . . . . . . . . . . . . . . 160 C/W 75 C/W

Package Power Dissipation Limit at +75 C for T ≤ +175 C

Metal Can Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW

Package Power Dissipation Derating Factor Above +75 C

Metal Can Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.3mW/ C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

Storage Temperature Range . . . . . . . . . . . . . . . . . -65 C to +150 C

ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<2000V

Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . .+300 C

Operating Conditions

Operating Temperature Range . . . . . . . . . . . . . . . -55 C to +125 C

≤ 1/2 (V+ - V-)

INCM

R ≥ 2kΩ

Operating Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. θ_JAis measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379

for details.

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: V

= ±15V, R

= 100Ω, R

LOAD

= 500kΩ, V = 0V, Unless Otherwise Specified.

OUT

SUPPLY

SOURCE

HA-2520/883

GROUP A

PARAMETERS

SYMBOL

CONDITIONS

SUBGROUPS

TEMPERATURE

MIN

-8

MAX

UNITS

Input Offset

Voltage

= 0V

2, 3

+25 C

200

400

200

400

+125 C, -55 C

-10

-200

-400

-200

-400

-25

-50

+10

Input Bias Current

= 0V, +R = 100kΩ, -R = 100Ω

+25 C

2, 3

+125 C, -55 C

-I

= 0V, +R = 100Ω, -R = 100kΩ

+25 C

2, 3

+125 C, -55 C

Input Offset

Current

= 0V, +R = 100kΩ, -R = 100kΩ

+25 C

2, 3

+125 C, -55 C

Common Mode

Range

+CMR

-CMR

V+ = 5V, V- = -25V

V+ = 25V, V- = -5V

+25 C

2, 3

+125 C, -55 C

+25 C

-10

2, 3

+125 C, -55 C

Large Signal

Voltage Gain

= 0V and +10V, R = 2kΩ

+25 C

kV/V

VOL

OUT

5, 6

+125 C, -55 C

7.5

-A

= 0V and -10V, R = 2kΩ

+25 C

5, 6

+125 C, -55 C

7.5

Common Mode

Rejection Ratio

+CMRR

-CMRR

∆V

= +10V, V+ = +5V, V- = -25V,

= -10V

+25 C

OUT

2, 3

+125 C, -55 C

∆V

= -10V, V+ = +25V, V- = -5V,

= +10V

+25 C

OUT

2, 3

+125 C, -55 C

Output Voltage

Swing

= 2kΩ

+25 C

OUT

5, 6

+125 C, -55 C

-V

= 2kΩ

+25 C

-10

OUT

5, 6

+125 C, -55 C

HA-2520/883

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Tested at: V

= ±15V, R

= 100Ω, R

LOAD

= 500kΩ, V = 0V, Unless Otherwise Specified.

OUT

SUPPLY

SOURCE

HA-2520/883

GROUP A

PARAMETERS

SYMBOL

CONDITIONS

= -10V

SUBGROUPS

TEMPERATURE

MIN

7.5

MAX

UNITS

Output Current

5, 6

+25 C

OUT

+125 C, -55 C

-I

= +10V

+25 C

-10

OUT

5, 6

+125 C, -55 C

-7.5

Quiescent Power

Supply Current

= 0V, I

= 0mA

+25 C

OUT

2, 3

+125 C, -55 C

6.5

-I

+25 C

-6

2, 3

+125 C, -55 C

-6.5

Power Supply

Rejection Ratio

+PSRR

-PSRR

∆V

= 10V, V+ = +20V, V- = -15V, V+

+25 C

SUP

= +10V, V- = -15V

2, 3

+125 C, -55 C

∆V

= 10V, V+ = +15V, V- = -20V, V+

+25 C

SUP

= +15V, V- = -10V

2, 3

+125 C, -55 C

Offset Voltage

Adjustment

+V Adj

Note 1

+25 C

-1

2, 3

+125 C, -55 C

-1

-V Adj

Note 1

+25 C

2, 3

+125 C, -55 C

NOTE:

2. Offset adjustment range is [V (Measured) ±1mV] minimum referred to output. This test is for functionality only to assure adjustment through 0V.

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: V

= ±15V, R

= 50Ω, R

LOAD

= 2kΩ, C

LOAD

= 50pF, A

= +3V/V, Unless Otherwise Specified.

SUPPLY

SOURCE

VCL

HA-2520/883

GROUP A

PARAMETERS

SYMBOL

+SR

CONDITIONS

SUBGROUPS

TEMPERATURE

MIN

MAX

UNITS

V/µs

Slew Rate

= -5V to +5V, 25% ≤ +SR ≤ 75%

8A, 8B

+25 C

100

OUT

+125 C, -55 C

-SR

= +5V to -5V, 75% ≥ -SR ≥ 25%

+25 C

100

8A, 8B

+125 C, -55 C

Rise and Fall Time

= 0 to +200mV, 10% ≤ T ≤ 90%

+25 C

8A, 8B

+125 C, -55 C

= 0 to -200mV, 10% ≤ T ≤ 90%

+25 C

8A, 8B

+125 C, -55 C

Overshoot

+OS

-OS

= 0 to +200mV

= 0 to -200mV

+25 C

8A, 8B

+125 C, -55 C

+25 C

8A, 8B

+125 C, -55 C

HA-2520/883

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Characterized at: V

= ±15V, R

= 2kΩ, C

LOAD

= 50pF, A ≥ 3, C

COMP

= 0pF, Unless Otherwise Specified.

HA-2520/883

SUPPLY

LOAD

PARAMETERS

SYMBOL

CONDITIONS

NOTES

TEMPERATURE

MIN

MAX

UNITS

Differential Input

Resistance

= 0V

+25 C

MΩ

Full Power

Bandwidth

GBWP

= 200mV, f = 10kHz

+25 C

MHz

= 200mV, f = 1MHz

+25 C

Full Power

Bandwidth

FPBW

CLSG

= 10V

1, 2

+25 C

1.6

PEAK

Minimum Closed

Loop Stable Gain

= 2kΩ, C = 50pF

-55 C to +125 C

V/V

Quiescent Power

Consumption

= 0V, I

= 0mA

OUT

1, 3

-55 C to +125 C

195

OUT

NOTES:

3. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters

are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon

data from multiple production runs which reflect lot to lot and within lot variation.

4. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV

PEAK

5. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQUIREMENTS

Interim Electrical Parameters (Pre Burn-In)

SUBGROUPS (SEE TABLES 1 AND 2)

Final Electrical Test Parameters

Group A Test Requirements

Groups C and D Endpoints

NOTE:

1 (Note 4), 2, 3, 4, 5, 6, 7, 8A, 8B

1, 2, 3, 4, 5, 6, 7, 8A, 8B

6. PDA applies to Subgroup 1 only.

HA-2520/883

Die Characteris tics

DIE DIMENSIONS:

WORST CASE CURRENT DENSITY:

67 x 57 x 19 mils ± 1 mils

0.26 x 10 A/cm

1700 x 1440 x 483µm ± 25.4µm

SUBSTRATE POTENTIAL (Powered Up):

Unbiased

METALLIZATION:

Type: Al, 1% Cu

TRANSISTOR COUNT:

Thickness: 16kÅ ± 2kÅ

HA-2520/883: 40

GLASSIVATION:

PROCESS:

Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)

Silox Thickness: 12kÅ ± 2kÅ

Bipolar Dielectric Isolation

Nitride Thickness: 3.5kÅ ± 1.5kÅ

Metallization Mas k Layout

COMP

V+

OUT

BAL

-IN

+IN

V-

HA-2520/883

Metal Can Packages (Can)

REFERENCE PLANE

T8.C MIL-STD-1835 MACY1-X8 (A1)

8 LEAD METAL CAN PACKAGE

INCHES

MILLIMETERS

SYMBOL

MIN

MAX

0.185

0.019

0.021

0.024

0.375

0.335

0.160

MIN

4.19

0.41

8.51

7.75

2.79

MAX

4.70

0.48

0.53

0.61

9.40

8.51

4.06

NOTES

ØD2

Øb

Øb1

Øb2

ØD

ØD1

ØD2

0.165

0.016

0.335

0.305

0.110

Øe

ØD ØD1

Øb1

Øb

0.200 BSC

0.100 BSC

5.08 BSC

2.54 BSC

BASE AND

SEATING PLANE

0.040

0.034

0.045

0.750

0.050

1.02

0.86

1.14

19.05

1.27

BASE METAL

LEAD FINISH

Øb2

0.027

0.500

0.69

12.70

Øb1

SECTION A-A

0.250

0.010

6.35

0.25

0.045

1.14

NOTES:

45 BSC

1. (All leads) Øb applies between L1 and L2. Øb1 applies between

L2 and 0.500 from the reference plane. Diameter is uncontrolled

in L1 and beyond 0.500 from the reference plane.

45 BSC

2. Measured from maximum diameter of the product.

Rev. 0 5/18/94

3. α is the basic spacing from the centerline of the tab to terminal 1

and β is the basic spacing of each lead or lead position (N -1

places) from α, looking at the bottom of the package.

4. N is the maximum number of terminal positions.

5. Dimensioning and tolerancing per ANSI Y14.5M - 1982.

6. Controlling dimension: INCH.

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.

Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

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HA2-2520/883产品参数

型号:	HA2-2520/883
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	HARRIS SEMICONDUCTOR
包装说明：	, CAN8,.2
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8542.33.00.01
风险等级：	5.26
Is Samacsys：	N
放大器类型：	OPERATIONAL AMPLIFIER
架构：	VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：	0.4 µA
25C 时的最大偏置电流 (IIB)：	0.2 µA
标称共模抑制比：	80 dB
频率补偿：	YES (AVCL>=3)
最大输入失调电压：	10000 µV
JESD-30 代码：	O-MBCY-W8
JESD-609代码：	e0
低-失调：	NO
负供电电压上限：	-20 V
标称负供电电压 (Vsup)：	-15 V
功能数量：	1
端子数量：	8
最高工作温度：	125 °C
最低工作温度：	-55 °C
封装主体材料：	METAL
封装等效代码：	CAN8,.2
封装形状：	ROUND
封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	+-15 V
认证状态：	Not Qualified
筛选级别：	38535Q/M;38534H;883B
最小摆率：	84 V/us
标称压摆率：	84 V/us
子类别：	Operational Amplifier
最大压摆率：	6.5 mA
供电电压上限：	20 V
标称供电电压 (Vsup)：	15 V
表面贴装：	NO
技术：	BIPOLAR
温度等级：	MILITARY
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WIRE
端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED
标称均一增益带宽：	20000 kHz
最小电压增益：	7500
Base Number Matches：	1

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