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产品型号HAT1029R的Datasheet PDF文件预览

HAT1029R  
Silicon P Channel Power MOS FET  
High Speed Power Switching  
ADE-208-522 (Z)  
1st. Edition  
May 1997  
Features  
Low on-resistance  
Capable of 2.5 V gate drive  
Low drive current  
High density mounting  
Outline  
SOP–8  
5
6
7
8
4
3
2
1
6
5
7 8  
D D  
D D  
4
G
2
G
1, 3  
2, 4  
Source  
Gate  
5, 6, 7, 8 Drain  
S 3  
1
S
MOS2  
MOS1  
HAT1029R  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
–20  
VGSS  
ID  
±10  
V
–3.5  
A
Note1  
Drain peak current  
ID(pulse)  
–28  
A
Body–drain diode reverse drain current IDR  
–3.5  
A
Channel dissipation  
Pch Note2  
Pch Note3  
2
W
W
°C  
°C  
Channel dissipation  
3
Channel temperature  
Tch  
150  
Storage temperature  
Tstg  
–55 to +150  
Note: 1. PW 10µs, duty cycle 1 %  
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW10s  
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW10s  
2
HAT1029R  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
–20  
V
ID = –10mA, VGS = 0  
Gate to source breakdown  
voltage  
V(BR)GSS  
±10  
V
IG = ±100µA, VDS = 0  
Gate to source leak current  
IGSS  
–0.5  
3
±10  
–1  
µA  
µA  
V
VGS = ±8V, VDS = 0  
VDS = –20 V, VGS = 0  
VDS = –10V, I D = –1mA  
ID = –2A, VGS = –4VNote4  
ID = –2A, VGS = –2.5VNote4  
ID = –2A, VDS = –10VNote4  
VDS = –10V  
Zero gate voltege drain current IDSS  
Gate to source cutoff voltage  
Static drain to source on state  
resistance  
VGS(off)  
–1.5  
0.14  
0.23  
RDS(on)  
RDS(on)  
|yfs|  
0.10  
0.16  
4.5  
465  
270  
100  
14  
Forward transfer admittance  
Input capacitance  
S
Ciss  
Coss  
Crss  
td(on)  
tr  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
VGS = 0  
f = 1MHz  
VGS = –4V, ID = –2A  
VDD –10V  
80  
Turn-off delay time  
Fall time  
td(off)  
tf  
70  
80  
Body–drain diode forward  
voltage  
VDF  
–0.95  
–1.24  
IF = –3.5A, VGS = 0Note4  
Body–drain diode reverse  
recovery time  
trr  
55  
ns  
IF = –3.5A, VGS = 0  
diF/ dt =20A/µs  
Note: 4. Pulse test  
3
HAT1029R  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
–100  
–30  
4.0  
3.0  
2.0  
1.0  
Test Condition :  
When using the glass epoxy board  
(FR4 40x40x1.6 mm), PW < 10 s  
10 µs 100 µs  
–10  
–3  
–1  
Operation in  
this area is  
–0.3  
–0.1 limited by R  
DS(on)  
Ta = 25 °C  
1 shot Pulse  
–0.03  
1 Drive Operation  
–0.01  
0
50  
100  
150  
200  
–0.1 –0.3  
–1  
–3  
–10 –30 –100  
(V)  
Drain to Source Voltage  
V
DS  
Ambient Temperature Ta (°C)  
Note 5 :  
When using the glass epoxy board  
(FR4 40x40x1.6 mm)  
Typical Output Characteristics  
Typical Transfer Characteristics  
–10 V –5 V  
–10  
–8  
–6  
–4  
–2  
–10  
–8  
–6  
–4  
–2  
Pulse Test  
–2.5 V  
–4 V  
–3.5 V  
–3 V  
25 °C  
75 °C  
Tc = –25 °C  
–2 V  
V
= –10 V  
V
= –1.5 V  
–8  
DS  
GS  
Pulse Test  
0
0
–1  
Gate to Source Voltage  
–2  
–3  
–4  
–5  
–2  
–4  
–6  
–10  
(V)  
V
(V)  
GS  
Drain to Source Voltage  
V
DS  
4
HAT1029R  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
Static Drain to Source on State Resistance  
vs. Drain Current  
1
–0.5  
–0.4  
–0.3  
–0.2  
–0.1  
0.5  
0.2  
0.1  
V
GS  
= –2.5 V  
–4 V  
I
= –2 A  
0.05  
D
–1 A  
0.02  
0.01  
–0.5 A  
–6  
Gate to Source Voltage  
0
–2  
–4  
–8  
–10  
(V)  
–0.1 –0.2  
–0.5 –1 –2  
Drain Current  
–5 –10  
(A)  
V
I
GS  
D
Forward Transfer Admittance vs.  
Drain Current  
Static Drain to Source on State Resistance  
vs. Temperature  
20  
10  
5
0.5  
0.4  
Tc = –25 °C  
I
= –2 A  
D
0.3  
–1 A –0.5 A  
25 °C  
2
1
75 °C  
0.2 V  
0.1  
= –2.5 V  
–4 V  
GS  
0.5  
–2 A, –1 A, –0.5 A  
V
= –10 V  
DS  
Pulse Test  
–0.5 –1 –2 –5 –10  
Drain Current I  
0
–40  
0.2  
–0.1 –0.2  
0
40  
80  
120  
160  
Case Temperature Tc (°C)  
(A)  
D
5
HAT1029R  
Body–Drain Diode Reverse  
Recovery Time  
Typical Capacitance vs.  
Drain to Source Voltage  
500  
2000  
1000  
500  
200  
100  
50  
Ciss  
Coss  
200  
100  
50  
Crss  
20  
10  
5
di / dt = 20 A / µs  
= 0, Ta = 25 °C  
V
= 0  
GS  
V
f = 1 MHz  
GS  
20  
–20  
(V)  
–0.1 –0.2  
–0.5 –1 –2  
–5 –10  
(A)  
0
–4  
–8  
–12  
–16  
Reverse Drain Current  
I
DR  
Drain to Source Voltage V  
DS  
Dynamic Input Characteristics  
Switching Characteristics  
500  
0
–10  
–20  
–30  
0
V
= –5 V  
–10 V  
–20 V  
DD  
200  
100  
50  
–2  
–4  
–6  
t
d(off)  
f
I
= –3.5 A  
D
V
DS  
t
t
r
V
GS  
20  
10  
5
t
d(on)  
= –4 V, V = –10 V  
DD  
V
= –20 V  
–10 V  
–5 V  
DD  
–40  
–50  
–8  
V
GS  
PW = 3 µs, duty < 1 %  
–0.5 –1 –2  
Drain Current  
–10  
20  
0
4
8
12  
16  
–0.1 –0.2  
–5 –10  
(A)  
Gate Charge Qg (nc)  
I
D
6
HAT1029R  
Reverse Drain Current vs.  
Souece to Drain Voltage  
–10  
–8  
–6  
–4  
–2  
V
= –5 V  
GS  
0, 5 V  
Pulse Test  
–0.4 –0.8 –1.2 –1.6  
Source to Drain Voltage  
0
–2.0  
(V)  
V
SD  
Switching Time Test Circuit  
Switching Time Waveform  
10%  
Vout  
Monitor  
Vin Monitor  
D.U.T.  
Vin  
R
L
90%  
90%  
V
DD  
Vin  
–4 V  
90%  
10%  
50Ω  
= –10 V  
10%  
Vout  
td(off)  
td(on)  
t
f
tr  
7
HAT1029R  
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)  
10  
D = 1  
0.5  
1
0.1  
0.1  
θ
θ
γ
θ
ch – f(t) = s (t) • ch – f  
ch – f = 125 °C/W, Ta = 25 °C  
0.01  
When using the glass epoxy board  
(FR4 40x40x1.6 mm)  
PW  
T
P
DM  
D =  
0.001  
PW  
T
0.0001  
100 µ  
1 m  
10 m  
100 m  
1
10  
100  
1000  
10000  
10 µ  
Pulse Width PW (S)  
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)  
10  
D = 1  
0.5  
1
0.1  
0.1  
θ
θ
γ
θ
ch – f(t) = s (t) • ch – f  
ch – f = 166 °C/W, Ta = 25 °C  
0.01  
When using the glass epoxy board  
(FR4 40x40x1.6 mm)  
PW  
T
P
DM  
D =  
0.001  
PW  
T
0.0001  
100 µ  
1 m  
10 m  
100 m  
1
10  
100  
1000  
10000  
10 µ  
Pulse Width PW (S)  
8
HAT1029R  
Package Dimensions  
Unit: mm  
5.0 Max  
5
8
1
4
6.2 Max  
0 – 8°  
1.27 Max  
1.27  
0.51 Max  
0.15  
0.25  
FP–8DA  
Hitachi code  
EIAJ  
M
MS-012AA  
JEDEC  
9
HAT1029R  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & IC Div.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Electronic components Group  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
2000 Sierra Point Parkway Dornacher Straße 3  
Brisbane, CA 94005-1897 D-85622 Feldkirchen, Munich  
Tel: <1> (800) 285-1601  
Fax: <1> (303) 297-0447  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.  
10  
配单直通车
HAT1029R产品参数
型号:HAT1029R
生命周期:Obsolete
IHS 制造商:RENESAS ELECTRONICS CORP
零件包装代码:SOIC
针数:8
Reach Compliance Code:unknown
ECCN代码:EAR99
风险等级:5.61
Is Samacsys:N
最大漏极电流 (Abs) (ID):3.5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE
最高工作温度:150 °C
极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2 W
子类别:Other Transistors
表面贴装:YES
Base Number Matches:1
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