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产品型号HAT1038R的Datasheet PDF文件预览

HAT1038R/HAT1038RJ

Silicon P Channel Power MOS FET

High Speed Power Switching

ADE-208-663C (Z)

4th. Edition

February 1999

Features

•

For Automotive Application ( at Type Code “J “)

Low on-resistance

Capable of 4 V gate drive

High density mounting

Outline

SOP–8

7 8

D D

1, 3

2, 4

Source

Gate

5, 6, 7, 8 Drain

S 3

MOS2

MOS1

HAT1038R/HAT1038RJ

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

– 60

± 20

– 3.5

– 28

– 3.5

—

Unit

Drain to source voltage

Gate to source voltage

Drain current

V_DSS

V_GSS

I_D

Note1

Drain peak current

Body-drain diode reverse drain current

I_D(pulse)

I_DR

Note4

Avalanche current

HAT1038R

I_AP

—

HAT1038RJ

HAT1038R

HAT1038RJ

– 3.5

—

Note4

Avalanche energy

E_AR

—

°C

1.05

Channel dissipation

Channel temperature

Storage temperature

Pch ^Note2

Pch ^Note3

Tch

150

Tstg

– 55 to + 150

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s

3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s

4. Value at Tch = 25°C, Rg ≥ 50 Ω

HAT1038R/HAT1038RJ

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

—

Max

—

Unit

Test Conditions

Drain to source breakdown voltage V_(BR)DSS– 60

I_D= – 10 mA, V_GS= 0

I_G= ± 100 µA, V_DS= 0

V_GS= ± 16 V, V_DS= 0

V_DS= – 60 V, V_GS= 0

Gate to source breakdown voltage V_(BR)GSS± 20

—

Gate to source leak current

I_GSS

—

– 1.2

—

± 10

– 1

µA

Zero gate voltage

drain current

HAT1038R I_DSS

HAT1038RJ I_DSS

HAT1038R I_DSS

HAT1038RJ I_DSS

—

– 0.1 µA

Zero gate voltage

drain current

—

µA

V_DS= – 48 V, V_GS= 0

Ta=125°C

—

–10

– 2.2

0.15

0.23

—

Gate to source cutoff voltage

Static drain to source on state

resistance

V_GS(off)

R_DS(on)

|y_fs|

—

V_DS= – 10 V, I _D= – 1 mA

I_D= – 2 A, V_GS= – 10 V^Note5

I_D= – 2 A, V_GS= – 4 V^Note5

I_D= – 2 A, V_DS= – 10 V^Note5

V_DS= –10 V

0.12

0.16

4.5

600

290

Ω

Forward transfer admittance

Input capacitance

Ciss

Coss

Crss

t_d(on)

t_r

—

Output capacitance

Reverse transfer capacitance

Turn-on delay time

—

V_GS= 0

—

f = 1MHz

—

V_GS= –10 V, I_D= – 2 A

V_DD– 30 V

Rise time

—

Turn-off delay time

t_d(off)

t_f

100

—

Fall time

—

Body–drain diode forward voltage

V_DF

– 0.98 – 1.28

IF = – 3. 5 A, V_GS= 0^Note5

Body–drain diode reverse

recovery time

t_rr

—

IF = – 3. 5 A, V_GS= 0

diF/ dt = 50A/µs

Note: 5. Pulse test

HAT1038R/HAT1038RJ

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

10 µs

–100

–30

4.0

3.0

2.0

1.0

Test Condition :

When using the glass epoxy board

(FR4 40x40x1.6 mm), PW < 10 s

–10

–3

–1

–0.3

–0.1

Operation in

this area is

limited by R

DS(on)

–0.03

–0.01

Ta = 25 °C

1 shot pulse

100

150

200

–0.1 –0.3 –1

–3

–10 –30 –100

(V)

Drain to Source Voltage

Ambient Temperature Ta (°C)

Note 6 :

When using the glass epoxy board

(FR4 40x40x1.6 mm)

Typical Transfer Characteristics

Typical Output Characteristics

–10 V

–10

–8

–6

–4

–2

–10

–8

–6

–4

–2

= 10 V

Pulse Test

–5 V

–3.5 V

–4 V

Pulse Test

–3 V

25 °C

–25 °C

–4

Tc = 75 °C

= –2.5 V

–8

–1

–2

–3

–5

(V)

–2

–4

–6

–10

Gate to Source Voltage

Drain to Source Voltage

(V)

HAT1038R/HAT1038RJ

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Static Drain to Source on State Resistance

vs. Drain Current

–0.5

–0.4

–0.3

–0.2

–0.1

Pulse Test

0.5

0.2

= –4 V

= –2 A

–1 A

0.1

–10 V

0.05

–0.5 A

0.02

0.01

–4

–8

–12

–16

–20

–0.1 –0.3

–1

–3

–10 –30 –100

(A)

Gate to Source Voltage

(V)

Drain Current

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance vs.

Drain Current

0.5

Pulse Test

= 10 V

Pulse Test

0.4

0.3

0.2

0.1

Ta = –25 °C

= –2 A

25 °C

–1 A

–0.5 A

75 °C

= –4 V

–2 A

0.5

–0.5, –1 A

–10 V

0.2

–40

120

160

–0.1 –0.2

–0.5 –1 –2

–5 –10

Case Temperature Tc (°C)

Drain Current

(A)

HAT1038R/HAT1038RJ

Body–Drain Diode Reverse

Typical Capacitance vs.

Drain to Source Voltage

Recovery Time

2000

1000

500

= 0

f = 1 MHz

200

100

Ciss

200

100

Coss

Crss

–30

di / dt = 50 A / µs

= 0, Ta = 25 °C

–0.1 –0.2 –0.5 –1 –2

–5 –10

(A)

–10

–20

–40

–50

Reverse Drain Current

Drain to Source Voltage

(V)

Switching Characteristics

= –10 V, V = –30 V

Dynamic Input Characteristics

1000

–20

–40

–60

= –3.5 A

= –10 V

–25 V

Pw = 5 µs, duty < 1 %

300

100

–50 V

–4

–8

–12

d(off)

d(on)

= –50 V

–25 V

–80

–16

–20

–10 V

–100

Gate Charge Qg (nc)

–0.1 –0.2

–0.5 –1 –2

Drain Current

–5

(A)

–10

HAT1038R/HAT1038RJ

Maximun Avalanche Energy vs.

Channel Temperature Derating

Reverse Drain Current vs.

Source to Drain Voltage

–10

–8

–6

–4

–2

2.5

2.0

1.5

1.0

= –3.5 A

= –25 V

L = 100 µH

duty < 0.1 %

Rg > 50

Ω

–10 V

= 0, 5 V

–5 V

0.5

Pulse Test

–0.4 –0.8 –1.2

–1.6

–2.0

(V)

100

125

150

Channel Temperature Tch (°C)

Source to Drain Voltage

Avalanche Waveform

Avalanche Test Circuit

DSS

– V

• L • I

•

DSS

Monitor

(BR)DSS

D. U. T

Vin

-15 V

50Ω

Switching Time Test Circuit

Switching Time Waveform

10%

Vout

Monitor

Vin Monitor

Vin

D.U.T.

90%

= –30 V

Vin

-10 V

90%

10%

50Ω

10%

Vout

td(off)

td(on)

HAT1038R/HAT1038RJ

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

D = 1

0.5

0.1

ch – f(t) = s (t) • ch – f

ch – f = 125 °C/W, Ta = 25 °C

0.01

0.001

When using the glass epoxy board

(FR4 40x40x1.6 mm)

D =

0.0001

100 µ

1 m

10 m

100 m

100

1000

10000

10 µ

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)

D = 1

0.5

0.1

ch – f(t) = s (t) • ch – f

ch – f = 166 °C/W, Ta = 25 °C

0.01

0.001

When using the glass epoxy board

(FR4 40x40x1.6 mm)

D =

0.0001

100 µ

1 m

10 m

100 m

100

1000

10000

10 µ

Pulse Width PW (S)

HAT1038R/HAT1038RJ

Package Dimensions

Unit: mm

5.0 Max

6.2 Max

0 – 8°

1.27 Max

1.27

0.51 Max

0.15

0.25

FP–8DA

—

Hitachi code

EIAJ

MS-012AA

JEDEC

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

: http:semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

Asia (Taiwan)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe GmbH

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Electronic components Group

Dornacher Stra§e 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Telex: 40815 HITEC HX

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

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HAT1038R产品参数

型号:	HAT1038R
生命周期：	Not Recommended
零件包装代码：	SOIC
包装说明：	FP-8DA, SOP-8
针数：	8
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.31
Is Samacsys：	N
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	3.5 A
最大漏极电流 (ID)：	3.5 A
最大漏源导通电阻：	0.23 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	MS-012AA
JESD-30 代码：	R-PDSO-G8
元件数量：	2
端子数量：	8
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	4 W
最大脉冲漏极电流 (IDM)：	28 A
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子形式：	GULL WING
端子位置：	DUAL
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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