HCF4066BEY原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号HCF4066BEY的概述

HCF4066BEY芯片概述 HCF4066BEY是一款广泛应用于电子设计和电路工程的模拟开关芯片，属于CMOS（互补金属氧化物半导体）技术系列。它提供了四个独立的模拟开关，能够在各种应用中实现信号的选择和切换，支持多种电压和信号类型，使其成为一种极具灵活性的器件。通常情况下，HCF4066BEY可以在较宽的电压范围内操作，能够处理既可以是正电压也可以是负电压的信号。详细参数 HCF4066BEY拥有以下重要参数： - 工作电压范围：3V至15V； - 最大电流：每个开关可承载较高的电流（通常为20mA）； - 输入信号范围：可达电源电压的85%； - 开关导通电阻：低于100Ω（具体值依赖于电压）； - 开关交叉渗透电流：非常小，减少对信号的干扰； - 开关延迟时间：一般在几十纳秒范围内； - 封装形式：DIP-14或者SO-14等多种形式，便于集成和安装。该芯片的工作原理基于MOS...

产品型号HCF4066BEY的Datasheet PDF文件预览

HCC/HCF4066B

QUAD BILATERAL SWITCH FOR TRANSMISSION

OR MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS

15V DIGITAL OR ± 7.5V PEAK-TO-PEAK

SWITCHING

80Ω TYPICAL ON RESISTANCE FOR 15V

OPERATION

SWITCH ON RESISTANCE MATCHED TO

WITHIN 5Ω

OVER 15V SIGNAL-INPUT

RANGE

(Plastic Package)

(Ceramic Frit Seal Package)

ON RESISTANCE FLAT OVER FULL PEAK-

TO-PEAKSIGNAL RANGE

HIGH ON/OFF OUTPUT-VOLTAGE RATIO :

65dB TYP. @ f_is= 10kHz, R_L= 10kΩ

HIGH DEGREE OF LINEARITY : < 0.5% DIS-

TORTION TYP. @ f_is= 1kHz, V_is= 5 Vp-p,

V_DD– V_SS≥ 10V, R_L= 10kΩ

EXTREMELY LOW OFF SWITCH LEAKAGE

RESULTING IN VERY LOW OFFSET CUR-

RENT AND HIGH EFFECTIVE OFF RESIST-

ANCE ; 10pA TYP. @ V_DD– V_SS= 10V,

T_A= 25°C

EXTREMELY HIGH CONTROL INPUT IMPED-

ANCE (control circuit isolated from signal cir-

cuit) : 10¹²Ω TYP.

LOW CROSSTALK BETWEEN SWITCHES : –

50dB TYP. @ f_is= 0.9MHz, R_L= 1kΩ

MATCHED CONTROL-INPUT TO SIGNAL-

OUTPUT CAPACITANCE : REDUCES OUT-

PUT SIGNAL TRANSIENTS

FREQUENCY RESPONSE, SWITCH ON =

40MHz (typ.)

QUIESCENT CURRENT SPECIFIED TO 20V

FOR HCC DEVICE

5V, 10V, AND 15V PARAMETRIC RATINGS

INPUT CURRENT OF 100nA AT 18V AND 25°C

FOR HCC DEVICE

100% TESTED FOR QUIESCENT CURRENT

MEETS ALLREQUIREMENTS OF JEDECTEN-

TATIVE STANDARD N^o. 13A, ”STANDARD

SPECIFICATIONS FOR DESCRIPTION OF ”B”

SERIES CMOS DEVICES”

(Plastic Chip Carrier)

(Micro Package)

ORDER CODES :

HCC4066BF

HCF4066BEY

HCF4066BM1

HCF4066BC1

PIN CONNECTIONS

DESCRIPTION

The HCC4066B (extended temperature range) and

HCF4066B (intermediate temperature range) are

monolithic integrated circuits, available in 14-lead

dual in-line plastic or ceramic package and plas-

tic micropackage. The HCC/HCF4066B is a quad

bilateral switch intended for the transmission or

multiplexing of analog or digital signals. It is pin-for-

June 1989

1/11

HCC/HCF4066B

pin compatible with HCC/HCF4016B, but exhibits a

much lower ON resistance. In addition, the ON re-

sistance is relatively constant over the full input-sig-

nal range. The HCC/HCF4066B consists of four

independent bilateral switches. A single control sig-

nal is required per switch. Both the p and the n de-

vice in a given switch are biased ON or OFF

simultaneously by the control signal. As shown in

schematic diagram, the well of the n-channel device

on each switch is either tied to the input when the

switch is ON or to V_SSwhen the switch is OFF. This

configuration eliminates the variation of the switch-

transistor threshold voltage with input signal, and

thus keeps the ON resistance low over the full oper-

ating-signal range. The advantages over single-

channel switches include peak input signal voltage

swings equal to the full supply voltage, and more

constant ON impedance over the input-signal

range. For sample-and-hold applications, however,

the HCC/HCF4016B is recommended.

SCHEMATIC DIAGRAM

1 OF 4 IDENTICAL SWITCHES AND ITS ASSOCIATED CONTROL CIRCUITRY.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Supply Voltage : HCC Types

HCF Types

Value

Unit

V_DD

– 0.5 to + 20

– 0.5 to + 18

V_i

I_I

Input Voltage

– 0.5 to V_DD+ 0.5

DC Input Current (any one input)

± 10

P_{t ot}

Total Power Dissipation (per package)

Dissipation per Output Transistor

200

for T_op= Full Package-temperature Range

100

T_{o p}

T_stg

Operating Temperature : HCC Types

HCF Types

– 55 to + 125

– 40 to + 85

°C

Storage Temperature

– 65 to + 150

°C

Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections

of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.

* All voltage values are referred to V_SSpin voltage.

2/11

HCC/HCF4066B

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Supply Voltage : HCC Types

HCF Types

Value

Unit

V_DD

3 to 18

3 to 15

V_I

Input Voltage

0 to V_DD

T_{o p}

Operating Temperature : HCC Types

HCF Types

– 55 to + 125

– 40 to + 85

°C

ELECTRICAL CHARACTERISTICS

(T_amb= 25°C, typical temperature coefficient for all V_DDvalues is 0,3%/°C)

Test Conditions

Value

25°C

Min. Max. Min. Typ. Max. Min. Max.

V_I

V_DD

(V)

T_Low

T_High*

Symbol

Parameter

Quiescent

Unit

(V)

I_L

0/ 5

0.25

0.5

0.01 0.25

0.01 0.5

7.5

Device

0/10 10

0/15 15

0/20 20

HCC

Types

Current (all

switches

ON or all

switches

OFF)

0.01

0.02

0.01

150

7.5

µA

0/ 5

HCF

0/10 10

0/15 15

Types

SIGNAL INPUTS (V_is) and Outputs (V_os

)

R_ON

V_C= V_DD

R_L= 10KΩ Return

– V

800

310

200

850

330

210

470 1050

180 400

125 240

470 1050

180 400

125 240

1300

550

HCC

Types

Resistance

________

320

Ω

V_is= V_SSto V_DD

1200

500

HCF

Types

300

∆ON

Resistance

R_L10kΩ, V_C= V_DD

between any 2

Switches, ∆R_ON

Ω

TDH

Total Harmonic

Distorsion

V_C= V_DD= 5V,

V_SS= – 5V,

V_is(p-p) = 5V

(sine wave centered in 0V)

R_L= 10kΩ,

0.4

f = 1kHz sine wave

- 3 dB Cutoff

Frequency (switch

on)

V_C= V_DD= 5V,

V_SS= – 5V,

V_is(p-p) = 5V

(sine wave centured on

0V)

MHz

R_L= 1kΩ

* T_Low= – 55°C for HCC device : – 40°C for HCF device.

* T_High= + 125°C for HCC device : + 85°C for HCF device.

The Noise Margin for both ”1” and ”0” level is : 1V min. with V_DD= 5V, 2V min. with V_DD= 10V, 2.5V min. with V_DD= 15V.

3/11

HCC/HCF4066B

ELECTRICAL CHARACTERISTICS (continued)

Test Conditions

Value

V_DD

T_Low

25°C

T_High

Unit

Symbol

Parameter

(V)

Min. Max. Min. Typ. Max. Min. Max.

- 50 dB

Feedthrough

V_C= V_SS= – 5V,

V_is(p-p) = 5V

Frequency(switch (sine wave centured on

MHz

off)

0V)

R_L= 1kΩ

- 50 dB Crosstalk V_C(A) = V_DD= + 5V

Frequency

V_C(B) = V_SS= – 5 V

V_is(A) = 5Vp-p,

50Ω source

MHz

R_L= 1kΩ

t_pd

Propagation Delay R_L= 200kΩ

(signal input to

signal output)

V_C= V_DD, V_SS= GND,

C_L= 50pF, V_is= 10V

(square wave centured on

5V)

t_r, t_f= 20ns

C_is

Input Capacitance V_DD= + 5V

V_C= V_SS= – 5V

C_os

Output

Capacitance

C_ios

Feedthrough

0.5

Input/Output

Leakage

Current

V_C= 0V

V_is= 18V ; V_os

= 0V

V_is= 0V ; V_os

= 18V

HCC

Types

± 0.1

± 0.3

±10^–3± 0.1

± 1

µA

Switch OFF

V_C= 0V

V_is= 15V ; V_os

= 0V

HCF

Types

±10^–3± 0.3

V_is= 0V ; V_os

= 15V

CONTROL (V_C)

V_ILC

Control Input Low

Voltage

< 10µA

V_is= V_SS, V_os= V_DD

and

V_is= V_DD, V_os= V_SS

V_IHC

Control Input High

Voltage

3.5

I_IH, I_IL

Input

Leakage

Current

HCC V_is≤ V_DD

Types V_DD– V_SS= 18V

± 0.1

± 0.3

±10^–5± 0.1

±10^–5± 0.3

± 1

µA

HCF V_DD– V_SS= 15V

Types V_CC≤ V_DD– V_SS

* T_Low= – 55°C for HCC device : – 40°C for HCF device.

* T_High= + 125°C for HCC device : + 85°C for HCF device.

The Noise Margin for both ”1” and ”0” level is : 1V min. with V_DD= 5V, 2V min. with V_DD= 10V, 2.5V min. with V_DD= 15V.

4/11

HCC/HCF4066B

ELECTRICAL CHARACTERISTICS (continued)

Test Conditions

Value

V_DD

(V)

T_Low

25°C

T_High

Unit

Symbol

Parameter

Min. Max. Min. Typ. Max. Min. Max.

Crosstalk (control V_C= 10V (sq. wave)

input to signal

output)

t_r, t_f= 20ns

R_L= 10kΩ

Turn-on

V_IN= V_DD

Propagation Delay t_r, t_f= 20ns

C_L= 50pF

R_L= 1kΩ

Control Input

V_is= V_DD,V_SS= GND

Repetition Rate

R_L= 1kΩ to gnd

C_L= 50pF

V_C= 10V (square

wave centured on

5V)

MHz

t_r, t_f= 20ns

V_os= 1/2V_os@ 1kHz

9.5

C_I

Input Capacitance Any Input

7.5

* T_Low= – 55°C for HCC device : – 40°C for HCF device.

* T_High= + 125°C for HCC device : + 85°C for HCF device.

The Noise Margin for both ”1” and ”0” level is : 1V min. with V_DD= 5V, 2V min. with V_DD= 10V, 2.5V min. with V_DD= 15V.

TYPICAL APPLICATIONS

BIDIRECTIONAL SIGNAL TRANSMISSION VIA DIGITAL CONTROL LOGIC

5/11

HCC/HCF4066B

TYPICAL APPLICATIONS (continued)

4-CHANNEL PAM MULTIPLEX SYSTEM DIAGRAM.

6/11

HCC/HCF4066B

Plastic DIP14 MECHANICAL DATA

inch

DIM.

MIN.

0.51

1.39

TYP.

MAX.

MIN.

0.020

0.055

TYP.

MAX.

1.65

0.065

0.5

0.020

0.010

0.25

0.787

8.5

2.54

15.24

0.335

0.100

0.600

7.1

5.1

0.280

0.201

3.3

0.130

1.27

2.54

0.050

0.100

P001A

7/11

HCC/HCF4066B

Ceramic DIP14/1 MECHANICAL DATA

inch

TYP.

DIM.

MIN.

TYP.

MAX.

MIN.

MAX.

0.787

0.276

7.0

3.3

0.130

0.600

0.38

0.015

15.24

2.29

0.4

2.79

0.55

1.52

0.31

2.54

10.3

8.05

5.08

0.090

0.016

0.046

0.009

0.060

0.110

0.022

0.060

0.012

0.100

0.406

0.317

0.200

1.17

0.22

1.52

7.8

0.307

P053C

8/11

HCC/HCF4066B

SO14 MECHANICAL DATA

inch

DIM.

MIN.

TYP.

MAX.

1.75

0.2

MIN.

TYP.

MAX.

0.068

0.007

0.064

0.018

0.010

0.1

0.003

1.65

0.46

0.25

0.35

0.19

0.013

0.007

0.5

0.019

45° (typ.)

8.55

5.8

8.75

6.2

0.336

0.228

0.344

0.244

1.27

7.62

0.050

0.300

3.8

4.6

0.5

4.0

5.3

0.149

0.181

0.019

0.157

0.208

0.050

0.026

1.27

0.68

8° (max.)

P013G

9/11

HCC/HCF4066B

PLCC20 MECHANICAL DATA

inch

TYP.

DIM.

MIN.

9.78

8.89

4.2

TYP.

MAX.

10.03

9.04

MIN.

0.385

0.350

0.165

MAX.

0.395

0.356

0.180

4.57

2.54

0.56

0.100

0.022

7.37

8.38

0.290

0.330

0.004

1.27

5.08

0.38

0.050

0.200

0.015

0.101

1.27

1.14

0.050

0.045

P027A

10/11

HCC/HCF4066B

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the

consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No

license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned

in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.

SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express

written approval of SGS-THOMSON Microelectonics.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

11/11

HCF4066BEY相关文章

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HCF4066BEY产品参数

型号:	HCF4066BEY
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	STMICROELECTRONICS
零件包装代码：	DIP
包装说明：	DIP, DIP14,.3
针数：	14
Reach Compliance Code：	unknown
HTS代码：	8542.39.00.01
Factory Lead Time：	16 weeks
风险等级：	7.55
模拟集成电路 - 其他类型：	SPST
JESD-30 代码：	R-PDIP-T14
JESD-609代码：	e4
正常位置：	NO
信道数量：	1
功能数量：	4
端子数量：	14
标称断态隔离度：	50 dB
通态电阻匹配规范：	5 Ω
最大通态电阻 (Ron)：	1050 Ω
最高工作温度：	125 °C
最低工作温度：	-55 °C
输出：	SEPARATE OUTPUT
封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP
封装等效代码：	DIP14,.3
封装形状：	RECTANGULAR
封装形式：	IN-LINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	3/15 V
认证状态：	Not Qualified
座面最大高度：	5.1 mm
子类别：	Multiplexer or Switches
最大供电电压 (Vsup)：	20 V
最小供电电压 (Vsup)：	3 V
标称供电电压 (Vsup)：	5 V
表面贴装：	NO
最长接通时间：	70 ns
技术：	MOS
温度等级：	MILITARY
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	THROUGH-HOLE
端子节距：	2.54 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	7.62 mm
Base Number Matches：	1

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产品型号HCF4066BEY的概述

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