HFA35HB60C原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

PD - 20378B

HFA35HB60C

Ultrafast, Soft Recovery Diode

FRED

Features

• Reduced RFI and EMI

• Reduced Snubbing

V_R= 600V

V_F= 1.9V

• Extensive Characterization of Recovery Parameters

• Hermetic

• Electrically Isolated

Q_rr= 270nC

• Ceramic Eyelets

di_(rec)M/dt = 345A/µs

Description

These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power

conditioning systems. An extensive characterization of the recovery behavior for different values of current,

temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery

eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors

drives and other applications where switching losses are significant portion of the total losses.

Absolute Maximum Ratings

Parameter

Max.

600

30

Units

V

V_R

Cathode to Anode Voltage (Per Leg)

Continuous Forward Current, T_C=100 °C

Single Pulse Forward Current, T_C= 25°C (Per Leg)

Maximum Power Dissipation

I_F(AV)

A

I_FSM

150

P_D@ T_C= 25°C

T_J,T_STG

63

W

Operating Junction and Storage Temperature Range

-55 to +150

°C

Note: D.C. = 50% rect. wave

1/2 sine wave, 60 Hz , P.W. = 8.33 ms

CASE STYLE

(ISOLATEDBASE)

ANODE COMMON ANODE

CATHODE

TO-254AA

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1

5/4/04

HFA35HB60C

Electrical Characteristics (Per Leg)@ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Test Conditions

V_BR

V_F

Cathode Anode Breakdown Voltage

600

—

V

I_R= 250µA

Forward Voltage

See Fig. 1

—

1.9

2.3

I_F= 15A

I_F= 30A

V

See Fig. 2

—

2.1

10

I_F= 15A, T_J= 125°C

V_R= V_RRated

I_R

Reverse Leakage Current

See Fig. 2

µA

mA

pF

—

1.0

36

V_R= 480V, T_J= 125°C

V_R= 200V

C_T

L_S

Junction Capacitance, See Fig. 3

Series Inductance

24

—

6.7

—

nH Measured from anode lead to cathode

lead , 6mm ( 0.025 in) from package

Dynamic Recovery Characteristics (Per Leg) @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Test Conditions

t_rr1

Reverse Recovery Time

—

54

88

ns T_J= 25°C See Fig.

T_J= 125°C

T_J= 25°C See Fig.

T_J= 125°C

T_J= 25°C See Fig.

T_J= 125°C

T_J= 25°C See Fig.

t_rr2

94 140

5.6 7.8

7.8 11.7

180 270

435 650

300 345

190 285

5

I_F= 15A

V_R= 200V

I_RRM1

I_RRM2

Q_rr1

Q_rr2

Peak Recovery Current

A

6

Reverse Recovery Charge

nC

7

di_f/dt = 200A/µs

di_(rec)M/dt1 Peak Rate of Fall of Recovery Current

di_(rec)M/dt2 During t_b

A/µs

T_J= 125°C

8

Thermal - Mechanical Characteristics

Parameter

Junction-to-Case, Single Leg Conducting

Typ.

—

9.3

Max.

2.0

—

Units

°C/W

g

R_thJC

Wt

Weight

2

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HFA35HB60C

1000

100

10

1

T = 150°C

J

T = 125°C

J

10

1

Tj = 150°C

Tj = 125°C

0.1

T = 25°C

J

0.01

0.001

0.0001

Tj = 25°C

0

200

400

600

Reverse Voltage - V (V)

R

Fig. 2 - Typical Reverse Current Vs. Reverse

Voltage (Per Leg)

A

1000

100

10

T = 25°C

J

1

10

100

1000

0.0

1.0

2.0

3.0

4.0

5.0

6.0

Reverse Voltage - V (V)

R

Forward Voltage Drop -V (V)

F

Fig. 3 - Typical Junction Capacitance Vs.

Fig. 1 - Maximum Forward Voltage Drop Vs.

Reverse Voltage (Per Leg)

Instantaneous Forward Current (Per Leg)

10

D = 0.50

1

0.20

0.10

0.05

P

2

DM

0.1

0.02

0.01

t

1

SINGLE PULSE

(THERMAL RESPONSE)

t

2

Notes:

1. Duty factor D = t / t

1

2. Peak T =P

x Z

+ T

C

J

DM

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

1

t , Rectangular Pulse Duration (sec)

1

Fig. 4 - Maximum Thermal Impedance Z_thjcCharacteristics (Per Leg)

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3

HFA35HB60C

100

10

1

150

V_R= 200V

T_J= 125°C

T_J= 25°C

I

= 30A

= 15A

= 7.5A

F

120

90

I

= 30A

= 15A

= 7.5A

F

60

30

V_R= 200V

T_J= 125°C

T_J= 25°C

0

100

1000

di /dt - (A/µs)

f

di /dt - (A/µs)

f

Fig. 5 - Typical Reverse Recovery Vs. di_f/dt (Per Leg)

Fig. 6 - Typical Recovery Current Vs. di_f/dt (Per Leg)

1200

10000

V_R= 200V

T_J= 125°C

T_J= 25°C

I

= 30A

= 15A

= 7.5A

F

I

900

600

300

0

F

1000

100

I

= 7.5A

= 15A

= 30A

F

I

F

V_R= 200V

T_J= 125°C

T_J= 25°C

10

100

1000

di /dt - (A/µs)

f

di /dt - (A/µs)

f

Fig. 7 - Typical Stored Charge Vs. di_f/dt (Per Leg)

Fig. 8 - Typical di_(rec)M/dt Vs. di_f/dt (Per Leg)

4

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HFA35HB60C

3

t

rr

I

F

t

a

b

0

REVERSE RECOVERY CIRCUIT

4

V

= 200V

Q

rr

R

2

I

RRM

0.5

I

RRM

5

di(rec)M/dt

Ω

0.01

0.75

I

L = 70µH

RRM

D.U.T.

1

di /dt

f

D

4. Q_rr-Areaundercurvedefinedbyt_rr

1.di_f/dt-Rateofchangeofcurrent

through zero crossing

dif/dt

ADJUST

and I_RRM

IRFP250

t_rrX I_RRM

G

Q_rr

=

2.I_RRM-Peakreverserecoverycurrent

2

S

3.trr-Reverserecoverytimemeasured

fromzerocrossingpointofnegative

goingI_Ftopointwherealinepassing

through0.75I_RRMand0.50I_RRM

extrapolatedtozerocurrent

5.di_(rec)M/dt-Peakrateofchangeof

current during t_bportion of t_rr

Fig. 10 - Reverse Recovery Waveform and Definitions

Fig. 9 - Reverse Recovery Parameter Test Circuit

Case Outline and Dimensions — TO-254AA

0.12 [.005]

6.60 [.260]

6.32 [.249]

13.84 [.545]

3.78 [.149]

13.59 [.535]

3.53 [.139]

1.27 [.050]

1.02 [.040]

A

20.32 [.800]

17.40 [.685]

20.07 [.790]

B

13.84 [.545]

13.59 [.535]

16.89 [.665]

1

2

3

C

17.40 [.685]

16.89 [.665]

0.84 [.033]

MAX.

1.14 [.045]

0.89 [.035]

3X

3.81 [.150]

2X

0.36 [.014]

B A

NOTES:

PIN ASSIGNMENTS

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENSION: INCH.

1 = ANODE 1

2 = COMMON CATHODE

3 = ANODE 2

4. CONFORMS TO JEDECOUTLINE TO-254AA.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105

IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776

Data and specifications subject to change without notice.

05/2004

www.irf.com

5

型号:	HFA35HB60C
是否无铅：	含铅
生命周期：	Transferred
IHS 制造商：	INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
零件包装代码：	TO-254AA
包装说明：	S-XSFM-P3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.38
Is Samacsys：	N
应用：	ULTRA FAST SOFT RECOVERY
外壳连接：	ISOLATED
配置：	COMMON CATHODE, 2 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
JEDEC-95代码：	TO-254AA
JESD-30 代码：	S-XSFM-P3
最大非重复峰值正向电流：	150 A
元件数量：	2
相数：	1
端子数量：	3
最高工作温度：	150 °C
最低工作温度：	-55 °C
最大输出电流：	30 A
封装主体材料：	UNSPECIFIED
封装形状：	SQUARE
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified
最大反向恢复时间：	0.088 µs
表面贴装：	NO
技术：	AVALANCHE
端子形式：	PIN/PEG
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

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