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产品型号HGTG20N60A4的概述

芯片HGTG20N60A4的概述 HGTG20N60A4是一款高性能的功率MOSFET，其设计旨在满足高效率开关电源和其他高频应用的需求。作为一款N沟道MOSFET，HGTG20N60A4主要用于高压、高功率的转换、放大及控制电路中。该器件的主要特点在于其高的耐压和低的导通电阻，使其在高功率应用中展现出了良好的热稳定性和导通效率。 HGTG20N60A4的优越特性包括快速开关速度、较低的顺应电阻，以及良好的热性能。这使其成为电源转换的理想选择，尤其在要求高频率和高效率的情况下。通过这种特性，HGTG20N60A4能够在减少功耗的同时，提高系统的整体性能。此外，这款芯片还具备良好的抗击涌流能力，使其在瞬态负载应用中表现出色。芯片HGTG20N60A4的详细参数 HGTG20N60A4的详细参数列示如下： - 型号: HGTG20N60A4 - 类型: N沟道MOSFET - 最大漏极-...

产品型号HGTG20N60A4的Datasheet PDF文件预览

HGTG20N60A4, HGTP20N60A4

Data Sheet

December 2001

600V, SMPS Series N-Channel IGBTs

Features

The HGTG20N60A4 and HGTP20N60A4 are MOS gated

high voltage switching devices combining the best features

of MOSFETs and bipolar transistors. These devices have the

high input impedance of a MOSFET and the low on-state

conduction loss of a bipolar transistor. The much lower

• >100kHz Operation at 390V, 20A

• 200kHz Operation at 390V, 12A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T = 125 C

on-state voltage drop varies only moderately between 25 C

• Low Conduction Loss

and 150 C.

• Temperature Compensating SABER™ Model

www.intersil.com

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power

supplies.

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Formerly Developmental Type TA49339.

Packaging

JEDEC TO-220AB ALTERNATE VERSION

Ordering Information

PART NUMBER

PACKAGE

TO-220AB

TO-247

BRAND

20N60A4

COLLECTOR

(FLANGE)

HGTP20N60A4

HGTG20N60A4

NOTE: When ordering, use the entire part number.

Symbol

JEDEC STYLE TO-247

COLLECTOR

(FLANGE)

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTG20N60A4, HGTP20N60A4 Rev. B

HGTG20N60A4, HGTP20N60A4

Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified

HGTG20N60A4, HGTP20N60A4

UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

600

CES

Collector Current Continuous

At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C25

At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C110

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

280

GES

GEM

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

±20

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

±30

Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA

100A at 600V

290

Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2.32

W/ C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T

-55 to 150

STG

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

300

260

PKG

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T = 25 C, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector to Emitter Breakdown Voltage

Emitter to Collector Breakdown Voltage

Collector to Emitter Leakage Current

= 250µA, V

= 0V

600

CES

ECS

= 10mA, V

= 0V

= 600V

T = 25 C

250

2.0

2.7

2.0

7.0

±250

µA

CES

T = 125 C

Collector to Emitter Saturation Voltage

= 20A,

T = 25 C

1.8

1.6

5.5

CE(SAT)

= 15V

T = 125 C

Gate to Emitter Threshold Voltage

Gate to Emitter Leakage Current

Switching SOA

= 250µA, V

= 600V

4.5

GE(TH)

C CE

= ±20V

GES

SSOA

T = 150 C, R = 3Ω, V

= 15V

100

L = 100µH, V = 600V

Gate to Emitter Plateau Voltage

On-State Gate Charge

= 20A, V

= 20A,

= 300V

8.6

142

182

GEP

= 15V

162

µJ

g(ON)

= 300V

= 20V

210

Current Turn-On Delay Time

Current Rise Time

IGBT and Diode at T = 25 C

d(ON)I

= 20A

= 390V

=15V

Current Turn-Off Delay Time

Current Fall Time

d(OFF)I

= 3Ω

L = 500µH

Test Circuit (Figure 20)

Turn-On Energy (Note 3)

Turn-Off Energy (Note 2)

105

280

150

ON1

ON2

OFF

350

200

HGTG20N60A4, HGTP20N60A4 Rev. B

HGTG20N60A4, HGTP20N60A4

Electrical Specifications T = 25 C, Unless Otherwise Specified (Continued)

PARAMETER

Current Turn-On Delay Time

Current Rise Time

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IGBT and Diode at T = 125 C

d(ON)I

= 20A

= 390V

= 15V

= 3Ω

Current Turn-Off Delay Time

Current Fall Time

105

135

d(OFF)I

L = 500µH

Test Circuit (Figure 20)

Turn-On Energy (Note 3)

Turn-Off Energy (Note 2)

Thermal Resistance Junction To Case

NOTES:

115

510

330

µJ

ON1

ON2

OFF

600

500

0.43

µJ

C/W

θJC

2. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (I

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1 ON2

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in

Figure 20.

Typical Performance Curves ^{Unless Otherwise Specified}

100

120

= 15V

DIE CAPABILITY

= 150 C, R = 3Ω, V = 15V, L = 100µH

G GE

100

PACKAGE LIMIT

100

125

150

100

200

300

400

500

600

700

, CASE TEMPERATURE ( C)

, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

500

450

400

350

300

250

200

150

100

= 390V, R = 3Ω, T = 125 C

G J

15V

75 C

300

= 0.05 / (t

d(OFF)I

+ t

)

MAX1

MAX2

d(ON)I

+ E )

OFF

= (P - P ) / (E

100

ON2

= CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)

= 0.43 C/W, SEE NOTES

ØJC

= 125 C, R = 3Ω, L = 500µH, V

= 390V

, GATE TO EMITTER VOLTAGE (V)

, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

HGTG20N60A4, HGTP20N60A4 Rev. B

HGTG20N60A4, HGTP20N60A4

Typical Performance Curves ^{Unless Otherwise Specified}(Continued)

100

DUTY CYCLE < 0.5%, V

PULSE DURATION = 250µs

= 12V

DUTY CYCLE < 0.5%, V

= 15V

PULSE DURATION = 250µs

= 125 C

= 150 C

T = 25 C

= 25 C

= 150 C

0.4

0.8

1.2

1.6

2.0

2.4

2.8

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE

FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

1400

800

= 3Ω, L = 500µH, V

= 390V

= 3Ω, L = 500µH, V

= 390V

700

600

500

400

300

200

100

1200

1000

800

600

400

200

= 125 C, V

= 12V, V = 15V

= 125 C, V

= 12V OR 15V

= 25 C, V

= 12V OR 15V

35 40

= 25 C, V

= 12V, V = 15V

, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

= 3Ω, L = 500µH, V

= 390V

= 3Ω, L = 500µH, V = 390V

= 25 C, T = 125 C, V

= 12V

= 25 C, T = 125 C, V

= 12V

= 25 C, T = 125 C, V

= 15V

= 25 C OR T = 125 C, V

= 15V

, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

HGTG20N60A4, HGTP20N60A4 Rev. B

HGTG20N60A4, HGTP20N60A4

Typical Performance Curves ^{Unless Otherwise Specified}(Continued)

120

110

= 3Ω, L = 500µH,

= 3Ω, L = 500µH, V

= 390V

= 12V, V

= 15V, T = 125 C

= 125 C, V

= 12V OR 15V

100

= 25 C, V

= 12V OR 15V

= 12V, V

= 15V, T = 25 C

, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER

CURRENT

240

= 1mA, R = 15Ω, T = 25 C

G(REF)

DUTY CYCLE < 0.5%, V

= 10V

PULSE DURATION = 250µs

200

= 600V

= 400V

160

120

= 25 C

= 200V

= 125 C

= -55 C

100

120

140

160

, GATE TO EMITTER VOLTAGE (V)

Q , GATE CHARGE (nC)

FIGURE 13. TRANSFER CHARACTERISTIC

FIGURE 14. GATE CHARGE WAVEFORMS

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

= 125 C, L = 500µH, V

= 390V, V = 15V

= 3Ω, L = 500µH, V

= 390V, V = 15V

= E

+ E

ON2 OFF

= E

ON2

+ E

TOTAL

OFF

= 30A

= 20A

= 10A

= 20A

= 10A

0.1

100

, GATE RESISTANCE (Ω)

1000

100

125

150

, CASE TEMPERATURE ( C)

FIGURE 15. TOTAL SWITCHING LOSS vs CASE

TEMPERATURE

FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE

HGTG20N60A4, HGTP20N60A4 Rev. B

HGTG20N60A4, HGTP20N60A4

Typical Performance Curves ^{Unless Otherwise Specified}(Continued)

2.2

2.1

2.0

1.9

1.8

1.7

FREQUENCY = 1MHz

DUTY CYCLE < 0.5%, T = 25 C

PULSE DURATION = 250µs,

= 30A

= 20A

IES

OES

= 10A

RES

100

V , GATE TO EMITTER VOLTAGE (V)

, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER

VOLTAGE

FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE

vs GATE TO EMITTER VOLTAGE

0.5

0.2

0.1

-1

0.05

0.02

0.01

DUTY FACTOR, D = t / t

PEAK T = (P X Z

X R

-2

) + T

θJC

θJC C

SINGLE PULSE

-5

-4

-3

-2

-1

t , RECTANGULAR PULSE DURATION (s)

FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveforms

HGTG20N60A4D

DIODE TA49372

90%

OFF

10%

ON2

L = 500µH

= 3Ω

90%

DUT

10%

d(OFF)I

= 390V

d(ON)I

FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT

FIGURE 21. SWITCHING TEST WAVEFORMS

HGTG20N60A4, HGTP20N60A4 Rev. B

HGTG20N60A4, HGTP20N60A4

Handling Precautions for IGBTs

Operating Frequency Information

Insulated Gate Bipolar Transistors are susceptible to

gate-insulation damage by the electrostatic discharge of

energy through the devices. When handling these devices,

care should be exercised to assure that the static charge

built in the handler’s body capacitance is not discharged

through the device. With proper handling and application

procedures, however, IGBTs are currently being extensively

used in production by numerous equipment manufacturers in

military, industrial and consumer applications, with virtually

no damage problems due to electrostatic discharge. IGBTs

can be handled safely if the following basic precautions are

taken:

Operating frequency information for a typical device

(Figure 3) is presented as a guide for estimating device

performance for a specific application. Other typical

frequency vs collector current (I ) plots are possible using

the information shown for a typical unit in Figures 6, 7, 8, 9

and 11. The operating frequency plot (Figure 3) of a typical

device shows f

or f ; whichever is smaller at each

MAX1

MAX2

point. The information is based on measurements of a

typical device and is bounded by the maximum rated

junction temperature.

is defined by f

= 0.05/(t

MAX1

+ t ).

d(OFF)I d(ON)I

MAX1

Deadtime (the denominator) has been arbitrarily held to 10%

of the on-state time for a 50% duty factor. Other definitions

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting

springs or by the insertion into conductive material such

as “ECCOSORBD™ LD26” or equivalent.

are possible. t

and t are defined in Figure 21.

d(OFF)I

d(ON)I

Device turn-off delay can establish an additional frequency

limiting condition for an application other than T

+ E

2. When devices are removed by hand from their carriers,

the hand being used should be grounded by any suitable

means - for example, with a metallic wristband.

is defined by f

MAX2

= (P - P )/(E

OFF

). The

ON2

MAX2

allowable dissipation (P ) is defined by P = (T - T )/R

JM θJC

The sum of device switching and conduction losses must not

exceed P . A 50% duty factor was used (Figure 3) and the

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from

circuits with power on.

conduction losses (P ) are approximated by

P = (V x I )/2.

CE CE

5. Gate Voltage Rating - Never exceed the gate-voltage

and E are defined in the switching waveforms

OFF

rating of V

. Exceeding the rated V can result in

ON2

GEM

permanent damage to the oxide layer in the gate region.

shown in Figure 21. E

is the integral of the

ON2

instantaneous power loss (I

x V ) during turn-on and

6. Gate Termination - The gates of these devices are

essentially capacitors. Circuits that leave the gate

open-circuited or floating should be avoided. These

conditions can result in turn-on of the device due to

voltage buildup on the input capacitor due to leakage

currents or pickup.

is the integral of the instantaneous power loss

OFF

x V ) during turn-off. All tail losses are included in the

calculation for E

; i.e., the collector current equals zero

OFF

= 0).

7. Gate Protection - These devices do not have an internal

monolithic Zener diode from gate to emitter. If gate

protection is required an external Zener is recommended.

HGTG20N60A4, HGTP20N60A4 Rev. B

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

SMART START™

STAR*POWER™

Stealth™

VCX™

FAST

ACEx™

Bottomless™

CoolFET™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

FASTr™

FRFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

CROSSVOLT™

DenseTrench™

DOME™

POP™

Power247™

PowerTrench^â

QFET™

EcoSPARK™

E²CMOS^TM

TinyLogic™

QS™

EnSigna^TM

TruTranslation™

UHC™

QT Optoelectronics™

Quiet Series™

SILENTSWITCHER^â

FACT™

FACT Quiet Series™

UltraFET^â

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H4

HGTG20N60A4相关文章

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HGTG20N60A4产品参数

型号:	HGTG20N60A4
是否Rohs认证：	不符合
生命周期：	Transferred
包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	not_compliant
风险等级：	5.11
其他特性：	LOW CONDUCTION LOSS
外壳连接：	COLLECTOR
最大集电极电流 (IC)：	70 A
集电极-发射极最大电压：	600 V
配置：	SINGLE
最大降落时间（tf）：	73 ns
门极发射器阈值电压最大值：	7 V
门极-发射极最大电压：	20 V
JEDEC-95代码：	TO-247
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	290 W
认证状态：	Not Qualified
最大上升时间（tr）：	18 ns
子类别：	Insulated Gate BIP Transistors
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
晶体管应用：	MOTOR CONTROL
晶体管元件材料：	SILICON
标称断开时间 (toff)：	160 ns
标称接通时间 (ton)：	28 ns
Base Number Matches：	1

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