欢迎访问ic37.com |
会员登录 免费注册
发布采购
所在地: 型号: 精确
  • 批量询价
  •  
  • 供应商
  • 型号
  • 数量
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
  •  
  • 北京元坤伟业科技有限公司

         该会员已使用本站17年以上

  • HGTG5N120BND
  • 数量-
  • 厂家-
  • 封装-
  • 批号-
  • -
  • QQ:857273081QQ:857273081 复制
    QQ:1594462451QQ:1594462451 复制
  • 010-62104931、62106431、62104891、62104791 QQ:857273081QQ:1594462451
更多
  • HGTG5N120BND图
  • 深圳市金和信科技有限公司(原金合讯)

     该会员已使用本站14年以上
  • HGTG5N120BND 现货库存
  • 数量3000 
  • 厂家ON 
  • 封装TO-247 
  • 批号2135+ 
  • 可以低于市场价格,15年销售经验,原装公司现货库存可零售可送货优势特价热卖销售
  • QQ:714451819QQ:714451819 复制
    QQ:2880443025QQ:2880443025 复制
  • 755-36853282 QQ:714451819QQ:2880443025
  • HGTG5N120BND图
  • 深圳市欧立现代科技有限公司

     该会员已使用本站12年以上
  • HGTG5N120BND 现货库存
  • 数量5000 
  • 厂家FAIRCHILD 
  • 封装TO-247 
  • 批号24+ 
  • 全新原装现货,低价出售,欢迎询购!
  • QQ:1950791264QQ:1950791264 复制
    QQ:2216987084QQ:2216987084 复制
  • 0755-83222787 QQ:1950791264QQ:2216987084
  • HGTG5N120BND图
  • 集好芯城

     该会员已使用本站13年以上
  • HGTG5N120BND
  • 数量13852 
  • 厂家ON/安森美 
  • 封装TO-247 
  • 批号最新批次 
  • 原装原厂 现货现卖
  • QQ:3008092965QQ:3008092965 复制
    QQ:3008092965QQ:3008092965 复制
  • 0755-83239307 QQ:3008092965QQ:3008092965
  • HGTG5N120BND图
  • 深圳市恒佳微电子有限公司

     该会员已使用本站12年以上
  • HGTG5N120BND
  • 数量5000 
  • 厂家ON/安森美 
  • 封装TO-247 
  • 批号23+ 
  • 只做原装只有原装深圳现货
  • QQ:864187665QQ:864187665 复制
    QQ:1807086236QQ:1807086236 复制
  • 755-82533156 QQ:864187665QQ:1807086236
  • HGTG5N120BND图
  • 深圳市富科达科技有限公司

     该会员已使用本站13年以上
  • HGTG5N120BND
  • 数量21688 
  • 厂家FSC/INTERSIL 
  • 封装TO-247 
  • 批号2020+ 
  • 全新原装进口现货特价热卖,长期供货
  • QQ:1327510916QQ:1327510916 复制
    QQ:1220223788QQ:1220223788 复制
  • 0755-28767101 QQ:1327510916QQ:1220223788
  • HGTG5N120BND图
  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • HGTG5N120BND
  • 数量8848 
  • 厂家ON/安森美 
  • 封装TO-247 
  • 批号23+ 
  • 原厂可订货,技术支持,直接渠道。可签保供合同
  • QQ:3007947087QQ:3007947087 复制
    QQ:3007947087QQ:3007947087 复制
  • 0755-83061789 QQ:3007947087QQ:3007947087
  • HGTG5N120BND图
  • 深圳市炎凯科技有限公司

     该会员已使用本站7年以上
  • HGTG5N120BND
  • 数量168 
  • 厂家ON/安森美 
  • 封装TO-247 
  • 批号24+ 
  • 原装现货
  • QQ:354696650QQ:354696650 复制
    QQ:2850471056QQ:2850471056 复制
  • 0755-89587732 QQ:354696650QQ:2850471056
  • HGTG5N120BND图
  • 深圳市积美福电子科技有限公司

     该会员已使用本站4年以上
  • HGTG5N120BND
  • 数量450 
  • 厂家ON/安森美 
  • 封装TO-247-3 
  • 批号21+ 
  • 自己原包装现货 实单|原装| 现货
  • QQ:647176908QQ:647176908 复制
    QQ:499959596QQ:499959596 复制
  • 0755-83228296 QQ:647176908QQ:499959596
  • HGTG5N120BND图
  • 深圳市捷立辉科技有限公司

     该会员已使用本站10年以上
  • HGTG5N120BND
  • 数量29686 
  • 厂家ON/安森美 
  • 封装 
  • 批号21+ 
  • 进口原装现货,公司真实库存ON代理渠道
  • QQ:1803576909QQ:1803576909 复制
  • -0755-82792948 QQ:1803576909
  • HGTG5N120BND图
  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • HGTG5N120BND
  • 数量128 
  • 厂家FAIRCHILD/仙童 
  • 封装NA/ 
  • 批号23+ 
  • 优势代理渠道,原装正品,可全系列订货开增值税票
  • QQ:3007977934QQ:3007977934 复制
    QQ:3007947087QQ:3007947087 复制
  • 0755-82546830 QQ:3007977934QQ:3007947087
  • HGTG5N120BND图
  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • HGTG5N120BND
  • 数量5000 
  • 厂家FSC 
  • 封装TO-247 
  • 批号16+ 
  • 百分百原装正品,现货库存
  • QQ:857273081QQ:857273081 复制
    QQ:1594462451QQ:1594462451 复制
  • 010-62106431 QQ:857273081QQ:1594462451
  • HGTG5N120BND图
  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
  • HGTG5N120BND
  • 数量31859 
  • 厂家FAIRCHILD 
  • 封装TO-247 
  • 批号2023+ 
  • 绝对原装正品现货,全新深圳原装进口现货
  • QQ:364510898QQ:364510898 复制
    QQ:515102657QQ:515102657 复制
  • 0755-83777708“进口原装正品专供” QQ:364510898QQ:515102657
  • HGTG5N120BND图
  • 千层芯半导体(深圳)有限公司

     该会员已使用本站9年以上
  • HGTG5N120BND
  • 数量5500 
  • 厂家FAIRCHILD 
  • 封装SMD 
  • 批号2019+ 
  • 长期供应原装现货实单可谈
  • QQ:2685694974QQ:2685694974 复制
    QQ:2593109009QQ:2593109009 复制
  • 0755-83978748,0755-23611964,13760152475 QQ:2685694974QQ:2593109009
  • HGTG5N120BND图
  • 深圳市金和信科技有限公司(原金合讯)

     该会员已使用本站14年以上
  • HGTG5N120BND
  • 数量3000 
  • 厂家ON 
  • 封装TO-247 
  • 批号2135+ 
  • 可以低于市场价格,15年销售经验,原装公司现货库存可零售可送货优势特价热卖销售
  • QQ:714451819QQ:714451819 复制
    QQ:2880443025QQ:2880443025 复制
  • 755-36853282 QQ:714451819QQ:2880443025
  • HGTG5N120BND图
  • 深圳市恒达亿科技有限公司

     该会员已使用本站12年以上
  • HGTG5N120BND
  • 数量4500 
  • 厂家FAIRCHILD 
  • 封装T0-3P 
  • 批号25+ 
  • 全新原装公司现货销售
  • QQ:1245773710QQ:1245773710 复制
    QQ:867789136QQ:867789136 复制
  • 0755-82772189 QQ:1245773710QQ:867789136
  • HGTG5N120BND图
  • 深圳市恒益昌科技有限公司

     该会员已使用本站6年以上
  • HGTG5N120BND
  • 数量5680 
  • 厂家FAIRCHILD 
  • 封装TO-3P 
  • 批号25+ 
  • 原装正品长期供货
  • QQ:3336148967QQ:3336148967 复制
    QQ:974337758QQ:974337758 复制
  • 0755-82723761 QQ:3336148967QQ:974337758
  • HGTG5N120BND图
  • 深圳市晶美隆科技有限公司

     该会员已使用本站15年以上
  • HGTG5N120BND
  • 数量85000 
  • 厂家FAIRCHILD/仙童 
  • 封装TO220 
  • 批号24+ 
  • 假一罚十,原装进口正品现货供应,价格优势。
  • QQ:198857245QQ:198857245 复制
  • 0755-82865294 QQ:198857245
  • HGTG5N120BND图
  • 深圳市恒达亿科技有限公司

     该会员已使用本站16年以上
  • HGTG5N120BND
  • 数量4500 
  • 厂家FAIRCHILD 
  • 封装T0-3P 
  • 批号25+ 
  • 全新原装现货特价销售!
  • QQ:867789136QQ:867789136 复制
    QQ:1245773710QQ:1245773710 复制
  • 0755-82723761 QQ:867789136QQ:1245773710
  • HGTG5N120BND图
  • 深圳市瑞天芯科技有限公司

     该会员已使用本站7年以上
  • HGTG5N120BND
  • 数量20000 
  • 厂家ONSemi 
  • 封装TO-247 
  • 批号22+ 
  • 深圳现货库存,保证原装正品
  • QQ:1940213521QQ:1940213521 复制
  • 15973558688 QQ:1940213521
  • HGTG5N120BND图
  • 深圳市宏世佳电子科技有限公司

     该会员已使用本站13年以上
  • HGTG5N120BND
  • 数量3625 
  • 厂家FAIRCHILD 
  • 封装TO-247 
  • 批号2023+ 
  • 全新原厂原装产品、公司现货销售
  • QQ:2881894392QQ:2881894392 复制
    QQ:2881894393QQ:2881894393 复制
  • 0755- QQ:2881894392QQ:2881894393
  • HGTG5N120BND图
  • 上海振基实业有限公司

     该会员已使用本站13年以上
  • HGTG5N120BND
  • 数量1276 
  • 厂家Fairchild 
  • 封装原厂封装 
  • 批号23+ 
  • 全新原装现货/另有约30万种现货,欢迎来电!
  • QQ:330263063QQ:330263063 复制
    QQ:1985476892QQ:1985476892 复制
  • 021-59159268 QQ:330263063QQ:1985476892
  • HGTG5N120BND图
  • 深圳市勤思达科技有限公司

     该会员已使用本站14年以上
  • HGTG5N120BND
  • 数量17957 
  • 厂家ON/安森美 
  • 封装TO-247 
  • 批号24+ 
  • 全新现货可以开税票
  • QQ:2881239445QQ:2881239445 复制
  • 0755-83264115 QQ:2881239445
  • HGTG5N120BND图
  • 上海磐岳电子有限公司

     该会员已使用本站11年以上
  • HGTG5N120BND
  • 数量5800 
  • 厂家FaIRchild 
  • 封装 
  • 批号2024+ 
  • 全新原装现货,杜绝假货。
  • QQ:3003653665QQ:3003653665 复制
    QQ:1325513291QQ:1325513291 复制
  • 021-60341766 QQ:3003653665QQ:1325513291
  • HGTG5N120BND图
  • 深圳市欧立现代科技有限公司

     该会员已使用本站12年以上
  • HGTG5N120BND
  • 数量5784 
  • 厂家FSC 
  • 封装TO-3P 
  • 批号24+ 
  • 全新原装现货,欢迎询购!
  • QQ:1950791264QQ:1950791264 复制
    QQ:221698708QQ:221698708 复制
  • 0755-83222787 QQ:1950791264QQ:221698708
  • HGTG5N120BND图
  • 北京齐天芯科技有限公司

     该会员已使用本站15年以上
  • HGTG5N120BND
  • 数量14950 
  • 厂家仙童 
  • 封装NA 
  • 批号2024+ 
  • 原装正品,假一罚十
  • QQ:2880824479QQ:2880824479 复制
    QQ:1344056792QQ:1344056792 复制
  • 010-62104931 QQ:2880824479QQ:1344056792
  • HGTG5N120BND图
  • 万三科技(深圳)有限公司

     该会员已使用本站2年以上
  • HGTG5N120BND
  • 数量660000 
  • 厂家onsemi(安森美) 
  • 封装TO-247-3 
  • 批号23+ 
  • 支持实单/只做原装
  • QQ:3008961398QQ:3008961398 复制
  • 0755-21006672 QQ:3008961398
  • HGTG5N120BND图
  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • HGTG5N120BND
  • 数量13880 
  • 厂家ON/安森美 
  • 封装TO-247-3 
  • 批号21+ 
  • 公司只售原装 支持实单
  • QQ:2881495751QQ:2881495751 复制
  • 0755-88917743 QQ:2881495751
  • HGTG5N120BND图
  • 深圳市羿芯诚电子有限公司

     该会员已使用本站7年以上
  • HGTG5N120BND
  • 数量8500 
  • 厂家原厂品牌 
  • 封装原厂封装 
  • 批号新年份 
  • 羿芯诚只做原装长期供,支持实单
  • QQ:2880123150QQ:2880123150 复制
  • 0755-82570600 QQ:2880123150
  • HGTG5N120BND图
  • 深圳市楚胜电子有限公司

     该会员已使用本站18年以上
  • HGTG5N120BND
  • 数量22358 
  • 厂家FAIRCHILD 
  • 封装TO-247 
  • 批号22+ 
  • 房间现货,价格优势。
  • QQ:424519403QQ:424519403 复制
  • 一线:0755-23483775 QQ:424519403
  • HGTG5N120BND_NL图
  • 深圳市一线半导体有限公司

     该会员已使用本站11年以上
  • HGTG5N120BND_NL
  • 数量24500 
  • 厂家原厂品牌 
  • 封装原厂外观 
  • 批号 
  • 全新原装部分现货其他订货
  • QQ:2881493920QQ:2881493920 复制
    QQ:2881493921QQ:2881493921 复制
  • 0755-88608801多线 QQ:2881493920QQ:2881493921
  • HGTG5N120BND图
  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • HGTG5N120BND
  • 数量85000 
  • 厂家ON/安森美 
  • 封装TO-247 
  • 批号23+ 
  • 真实库存全新原装正品!代理此型号
  • QQ:2881495753QQ:2881495753 复制
  • 0755-23605827 QQ:2881495753
  • HGTG5N120BND图
  • 深圳市创思克科技有限公司

     该会员已使用本站2年以上
  • HGTG5N120BND
  • 数量8800 
  • 厂家FAIRCHILD/仙童 
  • 封装TO-247 
  • 批号20+ 
  • 全新原装原厂实力挺实单欢迎来撩
  • QQ:1092793871QQ:1092793871 复制
  • -0755-88910020 QQ:1092793871

产品型号HGTG5N120BND的概述

芯片HGTG5N120BND的概述 HGTG5N120BND是一款高压、高流量的IGBT(绝缘栅双极晶体管),主要用于功率电子领域。该芯片具备低导通电阻和高速开关能力,适用于逆变器、电机驱动以及其他功率转换应用。其高耐压能力使其在工业控制领域也具有广泛的应用。 HGTG5N120BND通常被归类为N型晶体管。它的主要优点包括高效率、良好的散热性能以及宽广的工作温度范围。这使得它在多种应用场合下都能表现出色。该晶体管可以在高达1200V的电压下稳定工作,对于高电压环境下的应用设计尤为重要。 芯片HGTG5N120BND的详细参数 HGTG5N120BND的详细参数包括以下几个关键指标: - 最大集电极-发射极电压 (V_CE): 1200V - 连续集电极电流 (I_C): 5A - 脉冲集电极电流 (I_C,pulse): 15A - 网格-发射极电压 (V_GE): ±20V - 导...

产品型号HGTG5N120BND的Datasheet PDF文件预览

HGTG5N120BND, HGTP5N120BND  
Data Sheet  
May 2003  
21A, 1200V, NPT Series N-Channel IGBTs  
with Anti-Parallel Hyperfast Diodes  
Features  
o
• 21A, 1200V, T = 25 C  
C
The HGTG5N120BND and HGTP5N120BND are Non-  
Punch Through (NPT) IGBT designs. They are new  
members of the MOS gated high voltage switching IGBT  
family. IGBTs combine the best features of MOSFETs and  
bipolar transistors. This device has the high input impedance  
of a MOSFET and the low on-state conduction loss of a  
bipolar transistor. The IGBT used is the development type  
TA49308. The Diode used is the development type TA49058  
(Part number RHRD6120).  
• 1200V Switching SOA Capability  
o
Typical Fall Time . . . . . . . . . . . . . . . . 175ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
Thermal Impedance SPICE Model  
Temperature Compensating SABER™ Model  
www.fairchildsemi.com  
• Related Literature  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Packaging  
JEDEC STYLE TO-247  
Formerly Developmental Type TA49306.  
E
C
Ordering Information  
COLLECTOR  
(FLANGE)  
G
PART NUMBER  
HGTG5N120BND  
HGTP5N120BND  
PACKAGE  
TO-247  
TO-220AB  
BRAND  
5N120BND  
5N120BND  
NOTE: When ordering, use the entire part number. i.e.,  
HGTG5N120BND.  
JEDEC TO-220AB (ALTERNATE VERSION)  
Symbol  
C
COLLECTOR  
(FLANGE)  
E
C
G
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2003 Fairchild Semiconductor Corporation  
HGTG5N120BND, HGTP5N120BND, Rev. B1  
HGTG5N120BND, HGTP5N120BND  
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified  
C
HGTG5N120BND  
HGTP5N120BND  
UNITS  
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV  
1200  
V
CES  
Collector Current Continuous  
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
21  
10  
A
A
A
V
V
C25  
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
C110  
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
40  
CM  
GES  
GEM  
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
±20  
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
o
±30  
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA  
J
30A at 1200V  
167  
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
1.33  
W/ C  
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T  
J
-55 to 150  
C
STG  
Maximum Lead Temperature for Soldering  
o
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
300  
260  
8
C
L
o
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
C
pkg  
Short Circuit Withstand Time (Note 2) at V  
Short Circuit Withstand Time (Note 2) at V  
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t  
µs  
µs  
GE  
SC  
SC  
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t  
15  
GE  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTES:  
1. Pulse width limited by maximum junction temperature.  
o
2. V  
= 840V, T = 125 C, R = 25Ω.  
J G  
CE(PK)  
o
Electrical Specifications  
T = 25 C, Unless Otherwise Specified  
C
PARAMETER  
SYMBOL  
BV  
TEST CONDITIONS  
= 250µA, V = 0V  
MIN  
TYP  
MAX  
-
UNITS  
V
Collector to Emitter Breakdown Voltage  
Collector to Emitter Leakage Current  
I
1200  
-
-
CES  
C
GE  
o
I
V
= 1200V  
T
= 25 C  
-
-
250  
-
µA  
µA  
mA  
V
CES  
CE  
C
C
C
C
C
o
T
T
T
T
= 125 C  
100  
-
o
= 150 C  
-
1.5  
2.7  
4.2  
-
o
Collector to Emitter Saturation Voltage  
V
I
= 5A,  
= 15V  
= 25 C  
-
2.45  
3.7  
6.8  
-
CE(SAT)  
C
V
GE  
o
= 150 C  
-
V
Gate to Emitter Threshold Voltage  
Gate to Emitter Leakage Current  
Switching SOA  
V
I
= 45µA, V = V  
CE GE  
6.0  
-
V
GE(TH)  
C
I
V
= ±20V  
±250  
-
nA  
A
GES  
GE  
o
SSOA  
T = 150 C, R = 25, V  
= 15V,  
30  
-
J
G
GE  
= 1200V  
L = 5mH, V  
CE(PK)  
Gate to Emitter Plateau Voltage  
On-State Gate Charge  
V
I
I
= 5A, V  
= 600V  
CE  
-
-
-
-
-
-
-
-
-
10.5  
53  
-
V
GEP  
C
Q
= 5A,  
V
V
= 15V  
65  
nC  
nC  
ns  
ns  
ns  
ns  
µJ  
µJ  
G(ON)  
C
GE  
V
= 600V  
CE  
= 20V  
o
60  
72  
GE  
Current Turn-On Delay Time  
Current Rise Time  
t
IGBT and Diode at T = 25 C,  
22  
25  
d(ON)I  
J
I
= 5A,  
CE  
t
15  
20  
rI  
V
V
R
= 960V,  
= 15V,  
CE  
Current Turn-Off Delay Time  
Current Fall Time  
t
GE  
160  
130  
450  
390  
180  
160  
600  
450  
d(OFF)I  
= 25,  
G
t
fI  
L = 5mH,  
Test Circuit (Figure 20)  
Turn-On Energy  
E
ON  
Turn-Off Energy (Note 3)  
E
OFF  
©2003 Fairchild Semiconductor Corporation  
HGTG5N120BND, HGTP5N120BND, Rev. B1  
HGTG5N120BND, HGTP5N120BND  
o
Electrical Specifications  
PARAMETER  
T = 25 C, Unless Otherwise Specified (Continued)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
20  
MAX  
25  
UNITS  
ns  
o
Current Turn-On Delay Time  
Current Rise Time  
t
IGBT and Diode at T = 150 C,  
-
-
-
-
-
-
-
-
-
-
-
d(ON)I  
J
I
= 5A,  
CE  
t
15  
20  
ns  
rI  
V
V
= 960V,  
= 15V,  
CE  
Current Turn-Off Delay Time  
Current Fall Time  
t
GE  
182  
175  
1000  
560  
2.70  
50  
280  
200  
1300  
800  
3.50  
65  
ns  
d(OFF)I  
R
= 25,  
G
t
ns  
fI  
L = 5mH,  
Test Circuit (Figure 20)  
Turn-On Energy  
E
µJ  
ON  
Turn-Off Energy (Note 3)  
Diode Forward Voltage  
Diode Reverse Recovery Time  
E
µJ  
OFF  
V
I
I
I
= 10A  
V
EC  
EC  
EC  
EC  
t
= 7A, dl /dt = 200A/µs  
EC  
ns  
rr  
= 1A, dl /dt = 200A/µs  
EC  
30  
40  
ns  
o
Thermal Resistance Junction To Case  
NOTE:  
R
IGBT  
-
0.75  
1.75  
C/W  
θJC  
o
Diode  
-
C/W  
3. Turn-Off Energy Loss (E  
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and  
OFF  
ending at the point where the collector current equals zero (I  
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for  
CE  
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.  
Typical Performance Curves Unless Otherwise Specified  
25  
20  
15  
10  
5
35  
30  
25  
20  
15  
10  
5
o
V
= 15V  
T
= 150 C, R = 25, V = 15V, L = 5mH  
GE  
GE  
J
G
0
0
25  
50  
75  
100  
125  
150  
0
200  
400  
600  
800  
1000  
1200  
1400  
o
T
, CASE TEMPERATURE ( C)  
V
CE  
, COLLECTOR TO EMITTER VOLTAGE (V)  
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE  
TEMPERATURE  
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA  
©2003 Fairchild Semiconductor Corporation  
HGTG5N120BND, HGTP5N120BND, Rev. B1  
HGTG5N120BND, HGTP5N120BND  
Typical Performance Curves Unless Otherwise Specified (Continued)  
40  
80  
70  
60  
50  
40  
30  
20  
o
o
V
= 840V, R = 25, T = 125 C  
G J  
CE  
T
= 150 C, R = 25, L = 5mH,  
V
G
= 960V  
J
CE  
200  
100  
50  
o
T
= 75 C, V = 15V  
T
GE  
C
V
35  
30  
25  
20  
15  
10  
C
GE  
IDEAL DIODE  
I
o
SC  
15V  
12V  
75 C  
o
75 C  
f
f
= 0.05 / (t  
d(OFF)I  
+ t  
)
MAX1  
d(ON)I  
+ E )  
OFF  
t
SC  
= (P - P ) / (E  
MAX2  
D
C
ON  
P
= CONDUCTION DISSIPATION  
T
V
15V  
12V  
C
C
GE  
10  
o
(DUTY FACTOR = 50%)  
110 C  
110 C  
o
o
R
= 0.75 C/W, SEE NOTES  
ØJC  
10  
11  
12  
13  
14  
15  
2
4
6
8
10  
V
, GATE TO EMITTER VOLTAGE (V)  
GE  
I
, COLLECTOR TO EMITTER CURRENT (A)  
CE  
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO  
EMITTER CURRENT  
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME  
30  
30  
25  
20  
15  
10  
5
DUTY CYCLE <0.5%, V  
GE  
PULSE DURATION = 250µs  
= 12V  
25  
20  
15  
10  
5
o
= 25 C  
o
o
= -55 C  
o
T
T
= 150 C  
T
C
C
T
= -55 C  
C
C
o
T
= 25 C  
C
o
T
= 150 C  
C
DUTY CYCLE <0.5%, V  
= 15V  
PULSE DURATION = 250µs  
GE  
0
0
0
2
4
6
8
10  
0
2
4
6
8
10  
V
, COLLECTOR TO EMITTER VOLTAGE (V)  
CE  
V
, COLLECTOR TO EMITTER VOLTAGE (V)  
CE  
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE  
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE  
3000  
900  
R
= 25, L = 5mH, V  
= 960V  
CE  
R
= 25, L = 5mH, V  
= 960V  
CE  
G
G
800  
700  
600  
500  
400  
300  
200  
2500  
2000  
1500  
1000  
500  
o
T
= 150 C, V  
= 12V, V  
= 15V  
J
GE  
GE  
o
T
= 150 C, V  
= 12V OR 15V  
J
GE  
o
T
= 25 C, V = 12V OR 15V  
GE  
J
o
T
= 25 C, V  
= 12V, V  
8
= 15V  
9
J
GE  
7
GE  
0
2
3
4
5
6
10  
2
3
4
5
6
7
8
9
10  
I
, COLLECTOR TO EMITTER CURRENT (A)  
CE  
I
, COLLECTOR TO EMITTER CURRENT (A)  
CE  
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO  
EMITTER CURRENT  
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO  
EMITTER CURRENT  
©2003 Fairchild Semiconductor Corporation  
HGTG5N120BND, HGTP5N120BND, Rev. B1  
HGTG5N120BND, HGTP5N120BND  
Typical Performance Curves Unless Otherwise Specified (Continued)  
40  
35  
30  
25  
20  
40  
35  
30  
25  
20  
15  
R
= 25, L = 5mH, V = 960V  
CE  
R
J
= 25, L = 5mH, V = 960V  
CE  
G
G
o
o
T
= 25 C, T = 150 C, V  
= 12V  
GE  
J
o
o
T
= 25 C, T = 150 C, V  
= 12V  
GE  
J
J
15  
10  
0
o
o
o
o
T
= 25 C, T = 150 C, V  
= 15V  
J
J
GE  
T
= 25 C, T = 150 C, V  
= 15V  
7
J
J
GE  
2
3
4
5
6
7
8
9
10  
2
3
4
5
6
8
9
10  
I
, COLLECTOR TO EMITTER CURRENT (A)  
CE  
I
, COLLECTOR TO EMITTER CURRENT (A)  
CE  
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO  
EMITTER CURRENT  
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO  
EMITTER CURRENT  
250  
250  
R
= 25, L = 5mH, V  
= 960V  
G
CE  
R
= 25, L = 5mH, V  
= 960V  
CE  
G
225  
200  
175  
150  
125  
100  
o
V
= 12V, V = 15V, T = 150 C  
GE J  
GE  
200  
150  
o
T
= 150 C, V  
= 12V OR 15V  
J
GE  
o
= 25 C, V  
100  
50  
T
= 12V OR 15V  
GE  
J
o
= 15V, T = 25 C  
V
= 12V, V  
GE  
GE  
J
2
3
I
4
5
6
7
8
9
10  
2
3
4
5
6
7
8
9
10  
, COLLECTOR TO EMITTER CURRENT (A)  
CE  
I
, COLLECTOR TO EMITTER CURRENT (A)  
CE  
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO  
EMITTER CURRENT  
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO  
EMITTER CURRENT  
16  
80  
o
I
= 1mA, R = 120, T = 25 C  
G(REF)  
L
C
DUTY CYCLE <0.5%, V  
PULSE DURATION = 250µs  
= 20V  
CE  
14  
12  
10  
8
70  
V
= 1200V  
CE  
60  
50  
40  
30  
20  
10  
0
V
= 800V  
CE  
V
= 400V  
o
CE  
T
o
= 25 C  
C
6
4
o
T
= 150 C  
T
= -55 C  
C
C
2
0
0
10  
20  
30  
40  
50  
60  
7
8
9
10  
11  
12  
13  
14  
15  
V
, GATE TO EMITTER VOLTAGE (V)  
Q , GATE CHARGE (nC)  
G
GE  
FIGURE 13. TRANSFER CHARACTERISTIC  
FIGURE 14. GATE CHARGE WAVEFORMS  
©2003 Fairchild Semiconductor Corporation  
HGTG5N120BND, HGTP5N120BND, Rev. B1  
HGTG5N120BND, HGTP5N120BND  
Typical Performance Curves Unless Otherwise Specified (Continued)  
10  
8
2.0  
1.5  
1.0  
0.5  
0
o
DUTY CYCLE < 0.5%, T = 110 C  
C
PULSE DURATION = 250µs  
FREQUENCY = 1MHz  
6
C
IES  
V
= 15V  
GE  
V
= 10V  
GE  
4
2
C
OES  
C
RES  
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
0
5
10  
15  
20  
25  
V
, COLLECTOR TO EMITTER VOLTAGE (V)  
CE  
V
, COLLECTOR TO EMITTER VOLTAGE (V)  
CE  
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER  
VOLTAGE  
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE  
0
10  
0.5  
0.2  
0.1  
-1  
10  
0.05  
0.02  
t
1
P
D
DUTY FACTOR, D = t / t  
1
2
0.01  
-5  
SINGLE PULSE  
t
2
PEAK T = (P x Z  
x R  
) + T  
θJC C  
J
D
θJC  
-2  
10  
10  
-4  
-3  
10  
-2  
-1  
10  
0
10  
10  
10  
t , RECTANGULAR PULSE DURATION (s)  
1
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE  
100  
10  
1
60  
o
= 25 C, dl  
T
/ dt = 200A/µs  
EC  
C
50  
40  
30  
20  
10  
0
t
rr  
o
150 C  
t
a
o
25 C  
t
b
o
-55 C  
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
V , FORWARD VOLTAGE (V)  
I , FORWARD CURRENT (A)  
F
F
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD  
VOLTAGE DROP  
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT  
©2003 Fairchild Semiconductor Corporation  
HGTG5N120BND, HGTP5N120BND, Rev. B1  
HGTG5N120BND, HGTP5N120BND  
Test Circuit and Waveforms  
HGTG5N120BND  
90%  
OFF  
10%  
ON  
V
GE  
E
L = 2mH  
E
V
CE  
R
= 25Ω  
G
90%  
+
-
10%  
t
d(OFF)I  
I
CE  
V
= 960V  
DD  
t
rI  
t
fI  
t
d(ON)I  
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT  
FIGURE 21. SWITCHING TEST WAVEFORMS  
Handling Precautions for IGBTs  
Operating Frequency Information  
Insulated Gate Bipolar Transistors are susceptible to gate-  
insulation damage by the electrostatic discharge of energy  
through the devices. When handling these devices, care  
should be exercised to assure that the static charge built in the  
handler’s body capacitance is not discharged through the  
device. With proper handling and application procedures,  
however, IGBTs are currently being extensively used in  
production by numerous equipment manufacturers in military,  
industrial and consumer applications, with virtually no damage  
problems due to electrostatic discharge. IGBTs can be  
handled safely if the following basic precautions are taken:  
Operating frequency information for a typical device (Figure 3)  
is presented as a guide for estimating device performance for  
a specific application. Other typical frequency vs collector  
current (I ) plots are possible using the information shown  
CE  
for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating  
frequency plot (Figure 3) of a typical device shows f  
or  
MAX1  
; whichever is smaller at each point. The information is  
f
MAX2  
based on measurements of a typical device and is bounded  
by the maximum rated junction temperature.  
f
is defined by f  
MAX1  
= 0.05/(t ).  
+ t  
MAX1  
d(OFF)I d(ON)I  
Deadtime (the denominator) has been arbitrarily held to 10%  
of the on-state time for a 50% duty factor. Other definitions are  
1. Prior to assembly into a circuit, all leads should be kept  
shorted together either by the use of metal shorting  
springs or by the insertion into conductive material such as  
“ECCOSORBD™ LD26” or equivalent.  
possible. t  
and t are defined in Figure 19. Device  
d(OFF)I  
d(ON)I  
turn-off delay can establish an additional frequency limiting  
condition for an application other than T . t is  
JM d(OFF)I  
2. When devices are removed by hand from their carriers, the  
hand being used should be grounded by any suitable  
means - for example, with a metallic wristband.  
important when controlling output ripple under a lightly loaded  
condition.  
3. Tips of soldering irons should be grounded.  
f
is defined by f  
MAX2  
= (P - P )/(E  
OFF  
+ E ). The  
ON  
MAX2  
D
C
allowable dissipation (P ) is defined by P = (T - T )/R  
The sum of device switching and conduction losses must  
.
4. Devices should never be inserted into or removed from  
circuits with power on.  
D
D
JM θJC  
C
5. Gate Voltage Rating - Never exceed the gate-voltage  
not exceed P . A 50% duty factor was used (Figure 3) and  
D
rating of V  
. Exceeding the rated V can result in  
the conduction losses (P ) are approximated by  
C
GEM  
GE  
permanent damage to the oxide layer in the gate region.  
P
= (V  
x I )/2.  
C
CE  
CE  
6. Gate Termination - The gates of these devices are  
essentially capacitors. Circuits that leave the gate open-  
circuited or floating should be avoided. These conditions  
can result in turn-on of the device due to voltage buildup on  
the input capacitor due to leakage currents or pickup.  
E
and E  
OFF  
are defined in the switching waveforms shown  
is the integral of the instantaneous power  
ON  
in Figure 21. E  
loss (I x V ) during turn-on and E  
instantaneous power loss (I x V ) during turn-off. All tail  
ON  
is the integral of the  
CE CE OFF  
CE CE  
losses are included in the calculation for E  
OFF  
; i.e., the  
7. Gate Protection - These devices do not have an internal  
monolithic Zener diode from gate to emitter. If gate  
collector current equals zero (I = 0).  
CE  
protection is required an external Zener is recommended.  
©2003 Fairchild Semiconductor Corporation  
HGTG5N120BND, HGTP5N120BND, Rev. B1  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarksꢀ  
ACEx™  
PACMAN™  
POP™  
Power247™  
PowerTrench  
QFET™  
QS™  
SPM™  
Stealth™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
ImpliedDisconnect™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
FACT™  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
EcoSPARK™  
E2CMOSTM  
EnSignaTM  
FACT Quiet Series™  
â
FAST  
â
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
HiSeC™  
I2C™  
SyncFET™  
â
QT Optoelectronics™ TinyLogic  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
TruTranslation™  
UHC™  
UltraFET  
MSXPro™  
OCX™  
â
OCXPro™  
OPTOLOGIC  
Across the boardAround the worldꢀ™  
The Power Franchise™  
ProgrammableActive Droop™  
â
â
SILENT SWITCHER VCX™  
SMARTSTART™  
OPTOPLANAR™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGNꢀ FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERSꢀ  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATIONꢀ  
As used herein:  
1ꢀ Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
userꢀ  
2ꢀ A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectivenessꢀ  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product developmentꢀ Specifications may change in  
any manner without noticeꢀ  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later dateꢀ  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
designꢀ  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specificationsꢀ Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve designꢀ  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductorꢀ  
The datasheet is printed for reference information onlyꢀ  
Revꢀ I2  
配单直通车
HGTG5N120BND产品参数
型号:HGTG5N120BND
是否Rohs认证: 不符合
生命周期:Transferred
包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:not_compliant
风险等级:5.18
其他特性:LOW CONDUCTION LOSS
外壳连接:COLLECTOR
最大集电极电流 (IC):21 A
集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODE
最大降落时间(tf):160 ns
门极-发射极最大电压:20 V
JEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3
JESD-609代码:e0
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):167 W
认证状态:Not Qualified
最大上升时间(tr):20 ns
子类别:Insulated Gate BIP Transistors
表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE
端子位置:SINGLE
晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON
标称断开时间 (toff):357 ns
标称接通时间 (ton):35 ns
Base Number Matches:1
  •  
  • 供货商
  • 型号 *
  • 数量*
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
批量询价选中的记录已选中0条,每次最多15条。
 复制成功!