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产品型号HGTH12N50E1的Datasheet PDF文件预览

HGTP10N40C1, 40E1, 50C1, 50E1,  
HGTH12N40C1, 40E1, 50C1, 50E1  
10A, 12A,  
400V and 500V N-Channel IGBTs  
April 1995  
Features  
Packages  
HGTH-TYPES JEDEC TO-218AC  
• 10A and 12A, 400V and 500V  
• VCE(ON): 2.5V Max.  
EMITTER  
COLLECTOR  
• TFI: 1µs, 0.5µs  
GATE  
COLLECTOR  
(FLANGE)  
• Low On-State Voltage  
• Fast Switching Speeds  
• High Input Impedance  
• No Anti-Parallel Diode  
Applications  
HGTP-TYPES JEDEC TO-220AB  
• Power Supplies  
• Motor Drives  
EMITTER  
COLLECTOR  
COLLECTOR  
GATE  
(FLANGE)  
• Protection Circuits  
Description  
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1,  
HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1  
are n-channel enhancement-mode insulated gate bipolar transistors  
(IGBTs) designed for high-voltage, low on-dissipation applications such as  
switching regulators and motor drivers. These types can be operated  
directly from low-power integrated circuits.  
Terminal Diagram  
N-CHANNEL ENHANCEMENT MODE  
C
PACKAGING AVAILABILITY  
PART NUMBER  
HGTH12N40C1  
HGTH12N40E1  
HGTH12N50C1  
HGTH12N50E1  
HGTP10N40C1  
HGTP10N40E1  
HGTP10N50C1  
HGTP10N50E1  
PACKAGE  
TO-218AC  
BRAND  
G12N40C1  
G
TO-218AC  
TO-218AC  
TO-218AC  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
G12N40E1  
G12N50C1  
G12N50E1  
G10N40C1  
G10N40E1  
G10N50C1  
G10N50E1  
E
NOTE: When ordering, use the entire part number.  
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified  
C
HGTH12N40C1 HGTH12N50C1 HGTP10N40C1 HGTP10N50C1  
HGTH12N40E1 HGTH12N50E1 HGTP10N40E1 HGTP10N50E1 UNITS  
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES  
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . VCGR  
Reverse Collector-Emitter Voltage . . . . . . . . . . . . VECS(rev.)  
Gate-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE  
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC  
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM  
Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD  
Power Dissipation Derating Above TC > +25oC . . . . . . . . . . .  
400  
400  
15  
500  
500  
400  
400  
500  
500  
V
V
15  
-5  
-5  
V
±20  
12  
±20  
±20  
±20  
V
12  
10  
10  
A
17.5  
75  
17.5  
75  
17.5  
60  
17.5  
60  
A
W
0.6  
0.6  
0.48  
-55 to +150  
0.48  
-55 to +150  
W/oC  
oC  
Operating and Storage Junction Temperature Range . . . TJ, TSTG -55 to +150  
-55 to +150  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 1697.3  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
3-15  
Specifications HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1  
o
Electrical Specifications T = +25 C, Unless Otherwise Specified  
C
LIMITS  
HGTH12N40C1, E1, HGTH12N50C1, E1,  
HGTP10N40C1, E1  
HGTP10N50C1, E1  
PARAMETERS  
SYMBOL  
BV  
TEST CONDITIONS  
= 1mA, V = 0  
MIN  
MAX  
MIN  
MAX  
UNITS  
Collector-Emitter Breakdown  
Voltage  
I
400  
-
500  
-
V
CES  
C
GE  
Gate Threshold Voltage  
V
V
= V , I = 1mA  
2.0  
4.5  
2.0  
4.5  
V
GE(TH)  
GE  
CE  
C
3 (Typ)  
3 (Typ)  
o
Zero Gate Voltage Collector  
Current  
I
V
V
V
V
V
= 400V, T = +25 C  
-
-
-
-
-
-
-
-
-
-
-
-
250  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
250  
-
µA  
µA  
µA  
µA  
nA  
V
CES  
CE  
CE  
CE  
CE  
GE  
C
o
= 500V, T = +25 C  
C
o
= 400V, T = +125 C  
1000  
-
C
o
= 500V, T = +125 C  
1000  
100  
2.5  
C
Gate-Emitter Leakage Current  
Collector-Emitter on Voltage  
I
= ±20V, V = 0  
100  
2.5  
GES  
CE  
V
I
I
I
I
I
= 10A, V = 10V  
GE  
CE(ON)  
C
C
C
C
C
= 17.5A, V = 20V  
3.2  
3.2  
V
GE  
Gate-Emitter Plateau Voltage  
On-State Gate Charge  
Turn-On Delay Time  
Rise Time  
V
= 5A, V = 10V  
6 (Typ)  
19 (Typ)  
50  
6 (Typ)  
19 (Typ)  
50  
V
GEP  
CE  
Q
= 5A, V = 10V  
nC  
ns  
ns  
ns  
G(ON)  
D(ON)I  
CE  
t
= 10A, V  
= 300V,  
L = 50µH, T = +100 C,  
CE(CLP)  
o
J
t
50  
50  
RI  
D(OFF)I  
V
= 10V, R = 50Ω  
GE  
G
Turn-Off Delay Time  
Fall Time  
t
400  
400  
t
FI  
40E1, 50E1  
680 (Typ)  
400  
1000  
500  
680 (Typ)  
400  
1000  
500  
ns  
ns  
40C1, 50C1  
Turn-Off Energy Loss per Cycle  
(Off Switching Dissipation =  
W
I
= 10A, V  
= 300V,  
OFF  
C
CE(CLP)  
o
L = 50µH, T = +100 C,  
J
W
x Frequency)  
V
= 10V, R = 50Ω  
OFF  
GE G  
40E1, 50E1  
40C1, 50C1  
680 (Typ)  
400 (Typ)  
1.67  
2.083  
µJ  
µJ  
o
Thermal Resistance  
Junction-to-Case  
R
HGTH, HGTM  
HGTP  
-
-
-
-
1.67  
C/W  
θJC  
o
2.083  
C/W  
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:  
4,364,073  
4,587,713  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,417,385  
4,598,461  
4,644,637  
4,801,986  
4,883,767  
4,430,792  
4,605,948  
4,682,195  
4,803,533  
4,888,627  
4,443,931  
4,618,872  
4,684,413  
4,809,045  
4,890,143  
4,466,176  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,516,143  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,532,534  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,567,641  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
3-16  
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1  
Typical Performance Curves  
20.0  
17.5  
15.0  
12.5  
10.0  
7.5  
VGE = 10V, RGEN = RGE = 100  
100  
80  
60  
40  
20  
5.0  
2.5  
0.0  
-75 -50 -25  
0
+25 +50 +75 +100 +125 +150 +175  
0
+25  
+50  
+75  
+100  
+125  
+150  
TD, JUNCTION TEMPERATURE (oC)  
TC, CASE TEMPERATURE (oC)  
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. R = 50,  
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERAT-  
ING CURVE  
G
V
= 0V ARE THE MIN. ALLOWABLE VALUES  
GE  
Z
θJC(t) = r(t)RθJC,  
VGE = VCE, IC = 1mA  
D CURVES APPLY FOR POWER PULSE,  
TRAIN SHOWN READ TIME AT t1,  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
TJ(PEAK) - TC = P(PEAK)ZθJC(t)  
10  
1.0  
D = 0.2  
D = 0.5  
0.1  
D = 0.05  
SINGLE PULSE  
0.1  
0.01  
0.01  
1.0  
10  
100  
1000  
-50  
0
+50  
+100  
+150  
TJ, JUNCTION TEMPERATURE (oC)  
t, TIME (ms)  
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-  
AGE vs JUNCTION TEMPERATURE  
FIGURE 4. NORMALIZED THERMAL RESPONSE CHARAC-  
TERISTICS  
TC = +25oC  
VGE = 7V  
17.5  
17.5  
PULSE TEST, VCE = 10V  
PULSE DURATION = 80µs  
VGE = 20V  
VGE = 10V  
VGE = 8V  
15.0  
15.0  
12.5  
10.0  
7.5  
DUTY CYCLE = 0.5% MAX.  
VGE = 6V  
12.5  
10.0  
7.5  
VGE = 5V  
5.0  
5.0  
+25oC  
+125oC  
-40oC  
2.5  
2.5  
VGE = 4V  
0
2.5  
5.0  
7.5  
10.0  
0
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)  
VGE, GATE-TO-EMITTER VOLTAGE (V)  
FIGURE 5. TYPICAL TRANSFER CHARACTERISTICS  
FIGURE 6. TYPICAL SATURATION CHARACTERISTICS  
3-17  
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1  
Typical Performance Curves (Continued)  
1200  
1000  
800  
600  
400  
200  
0
17.5  
15.0  
12.5  
10.0  
7.5  
f = 1MHz  
PULSE TEST, VGE = 10V  
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5% MAX.  
CISS  
+25oC  
5.0  
2.5  
COSS  
CRSS  
0
10  
20  
30  
40  
50  
0
1
2
3
4
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)  
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)  
FIGURE7. TYPICALCOLLECTOR-TO-EMITTERON-VOLTAGE  
vs COLLECTOR CURRENT  
FIGURE 8. CAPACITANCE vs COLLECTOR-TO-EMITTER  
VOLTAGE  
400  
3.00  
2.75  
IC = 10A, VGE = 10V, VCL = 300V  
L = 50µH, RG = 50Ω  
300  
IC = 10A, VGE = 10V  
2.50  
IC = 10A, VGE = 15V  
200  
100  
0
2.25  
2.00  
IC = 5A, VGE = 10V  
1.75  
IC = 5A, VGE = 15V  
1.50  
+25  
+50  
+75  
+100  
+125  
+150  
+25  
+50  
+75  
+100  
+125  
+150  
TJ, JUNCTION TEMPERATURE (oC)  
TJ, JUNCTION TEMPERATURE (oC)  
FIGURE 9. TYPICAL V  
vs TEMPERATURE  
FIGURE 10. TYPICAL TURN-OFF DELAY TIME  
CE(ON)  
800  
700  
600  
500  
400  
300  
200  
100  
0
IC = 5A, VGE = 10V, VCL = 300V  
EOFF = IC * VCEdt  
L = 50µH, RG = 50Ω  
VGE  
IC  
40E1/50E1  
VCE  
40C1/50C1  
+25  
+50  
+75  
+100  
+125  
+150  
TJ, JUNCTION TEMPERATURE (oC)  
FIGURE 11. TYPICAL INDUCTIVE SWITCHING WAVEFORMS  
FIGURE 12. TYPICAL FALL TIME (I = 5A)  
C
3-18  
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1  
Typical Performance Curves (Continued)  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
800  
700  
600  
500  
400  
300  
200  
100  
0
VGE = 10V, VCL = 300V  
IC = 10A, VGE = 10V, VCL = 300V  
L = 50µH, RG = 50Ω  
L = 50µH, RG = 50Ω  
10A, 40E1/50E1  
10A, 40C1/50C1  
40E1/50E1  
40C1/50C1  
5A, 40E1/50E1  
5A, 40C1/50C1  
+25  
+50  
+75  
+100  
+125  
+150  
+25  
+50  
+75  
+100  
+125  
+150  
TJ, JUNCTION TEMPERATURE (oC)  
TJ, JUNCTION TEMPERATURE (oC)  
FIGURE 13. TYPICAL FALL TIME (I = 10A)  
FIGURE 14. TYPICAL CLAMPED INDUCTIVE TURN-OFF  
SWITCHING LOSS/CYCLE  
C
10  
500  
BVCES  
RL = 50Ω  
G(REF) = 0.38mA  
I
V
GE = 10V  
VCC = BVCES  
8
GATE-  
EMITTER  
VOLTAGE  
375  
250  
125  
0
6
4
VCC = 0.25 BVCES  
NOTE:  
FOR TURN-OFF GATE CURRENTS IN  
EXCESS OF 3mA. VCE TURN-OFF IS  
NOT ACCURATELY REPRESENTED  
BY THIS NORMALIZATION.  
2
0
COLLECTOR-EMITTER VOLTAGE  
IG(REF)  
IG(REF)  
20  
80  
TIME (µs)  
IG(ACT)  
IG(ACT)  
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS  
AT CONSTANT GATE CURRENT  
Test Circuit  
RL = 13Ω  
L = 50µH  
VCC  
130V  
1/RG = 1/RGEN + 1/RGE  
RGEN = 100Ω  
VCE(CLP)  
300V  
=
20V  
0V  
RGE = 100Ω  
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT  
3-19  
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1  
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3-21  
配单直通车
HGTH12N50E1产品参数
型号:HGTH12N50E1
是否Rohs认证: 不符合
生命周期:Obsolete
IHS 制造商:HARRIS SEMICONDUCTOR
包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown
风险等级:5.92
外壳连接:COLLECTOR
最大集电极电流 (IC):12 A
集电极-发射极最大电压:500 V
配置:SINGLE
最大降落时间(tf):1000 ns
门极发射器阈值电压最大值:4.5 V
门极-发射极最大电压:20 V
JEDEC-95代码:TO-218AC
JESD-30 代码:R-PSFM-T3
JESD-609代码:e0
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL
功耗环境最大值:75 W
最大功率耗散 (Abs):75 W
认证状态:Not Qualified
最大上升时间(tr):50 ns
子类别:Insulated Gate BIP Transistors
表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE
端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL
晶体管元件材料:SILICON
最大关闭时间(toff):400 ns
最大开启时间(吨):50 ns
VCEsat-Max:3.2 V
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