HIP2060
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HIP2060
UNITS
Continuous Drain-Source Voltage Over Operating Junction and Case Temperature Range. . . . . .V
60
V
DS
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
60
±20
V
V
DGR
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
SD
DM
Continuous Source-Drain Diode Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
10
A
Pulsed Drain Current, each Output, all Outputs on (Notes 1, 2) . . . . . . . . . . . . . . . . . . . . . . . I
25
A
Continuous Drain Current, each Output, all Outputs on (Note 2). . . . . . . . . . . . . . . . . . . . . . . .I
10
A
DS
AS
Single Pulse Avalanche Energy (Note 3) Refer to UIS Curve . . . . . . . . . . . . . . . . . . . . . . . . . E
o
100
mJ
W
Continuous Power Dissipation at T = 25 C (Infinite Heatsink). . . . . . . . . . . . . . . . . . . . . . . . . P
C
46
D
o
o
Continuous Power Dissipation, Derate above T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
0.37
60
W/ C
o
Thermal Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . θJA
C/W
o
Operating Case Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
-40 to 125
-40 to 150
300
C
C
o
Junction and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
C
J
STG
o
Lead Temperature (For Soldering, 10s)(Lead Tips Only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
L
Continuous Drain1-Source2 Voltage Over Operating Junction Temperature Range. . . . . . V
60
V
D1S2
NOTES:
1. Pulse width limited by maximum junction temperature.
2. Drain current limited by package construction.
o
3. V
= 25V, Start T = 25 C, L = 1.5mH, R
J
= 50Ω, R = 0. See Figures 2, 12, and 13.
GS
DD
o
Electrical Specifications
PARAMETER
T
= 25 C, Unless Otherwise Specified
C
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
o
Drain-Source Breakdown Voltage
BV
DSS
I
= 100µA, V
GS
= 0V
T
= -40 C to
60
-
-
V
D
C
o
125 C
o
T
= 25 C
-
1.5
-
70
2.3
105
-
2.7
-
V
V
V
C
Gate Threshold Voltage
V
V
= V , I = 250µA
GS(TH)
GS DS D
o
Drain1-Source2 Breakdown Voltage
(Across D1)
BV
I
V
= 1µA,
T
T
= 25 C
D1S2
D1S2
C
C
V
= 0V
G1S1, G2S2
o
Zero Gate Voltage Drain Current
I
V
= 60V
= 0V
= 25 C
-
-
1
µA
DSS
DS
V
GS
o
Drain1-Source2 Current (Through D1)
I
V
= 60V
= 0V, V
T
T
= 25 C
-
-
-
-
-
0.3
1
1
µA
µA
V
D1S2
D1S2
C
C
V
= 0V
G1S1
G2S2
o
= 125 C
-
Drain-Source On-State Voltage
(Note 4)
V
I
I
= 10A, V
= 10A, V
= 15V
= 10V
0.9
1.1
-
1.25
1.5
100
DS(ON)
D
GS
V
D
GS
Forward Gate Current, Drain Short
Circuited to Source
I
V
= 0V, V
= 20V
nA
GSSF
DS
DS
GS
GS
Reverse Gate Current, Drain Short
Circuited to Source
I
V
= 0V, V
= -20V
-
-
-100
nA
GSSR
o
Drain-Source On Resistance (Note 4)
r
V
V
V
V
V
= 15V, I = 10A
T
T
T
T
= 25 C
-
-
-
-
-
0.09
0.15
0.11
0.19
4.5
0.135
0.21
0.15
0.25
-
Ω
Ω
Ω
Ω
S
DS(ON)
GS
GS
GS
GS
DS
D
C
C
C
C
o
= 15V, I = 10A
= 125 C
D
o
= 10V, I = 10A
= 25 C
D
o
= 10V, I = 10A
= 125 C
D
Forward Transconductance (Note 4)
g
= 15V, I = 5A
D
fs
2