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产品型号HIP2060AS3的Datasheet PDF文件预览

HIP2060  
60V, 10A Half Bridge Power MOSFET Array  
April 1998  
Features  
Description  
• Two 10A Power MOS N-Channel Transistors  
• Output Voltage to 60V  
The HIP2060 is a power half-bridge MOSFET array that con-  
sists of two matched N-Channel enhancement-mode MOS  
transistors. The advanced Intersil PASIC2 process technol-  
ogy used in this product utilizes efficient geometries that pro-  
vides outstanding device performance and ruggedness.  
• r  
• r  
. . . . . 0.135Max Per Transistor at V  
= 15V  
= 10V  
DS(ON)  
GS  
GS  
. . . . . . 0.15Max Per Transistor at V  
DS(ON)  
The HIP2060 is designed to integrate two power devices in  
one chip thus providing board layout area and heat sink sav-  
ings for applications such as Motor Controls, Uninterruptable  
Power Supplies, Switch Mode Power Supplies, Voice Coil  
Motors, and Class D Power Amplifier.  
• Pulsed Current . . . . . . . . . . . . . . . .25A Each Transistor  
• Avalanche Energy . . . . . . . . . . 100mJ Each Transistor  
• Grounded Tab Eliminates Heat Sink Isolation  
Ordering Information  
TEMP.  
PKG.  
NO.  
Symbol  
o
PART NUMBER RANGE ( C)  
PACKAGE  
HIP2060AS1  
HIP2060AS2  
HIP2060AS3  
-40 to 125 5 Ld SIP  
Z5.067C  
DRAIN1  
5
-40 to 125 5 Ld Gullwing SIP Z5.067A  
-40 to 125 5 Ld SIP Z5.067B  
GATE1  
Z1  
Z2  
D1  
NOTE: When ordering use the entire part number.  
1
SOURCE1 = DRAIN2  
4
GATE2  
2
3, TAB  
SOURCE2  
Packages  
JEDEC TS-001AA (ALTERNATE VERSION)  
HIP2060 AS1  
JEDEC MO-169  
HIP2060 AS2  
5
4
3
2
1
1 GATE1  
2 GATE2  
(TAB)  
3 SOURCE2  
4 SOURCE1-DRAIN2  
5 DRAIN1  
Z5.067B (SIP)  
HIP2060 AS3  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 3983.5  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
1
HIP2060  
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified  
C
HIP2060  
UNITS  
Continuous Drain-Source Voltage Over Operating Junction and Case Temperature Range. . . . . .V  
60  
V
DS  
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
60  
±20  
V
V
DGR  
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
GS  
SD  
DM  
Continuous Source-Drain Diode Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
10  
A
Pulsed Drain Current, each Output, all Outputs on (Notes 1, 2) . . . . . . . . . . . . . . . . . . . . . . . I  
25  
A
Continuous Drain Current, each Output, all Outputs on (Note 2). . . . . . . . . . . . . . . . . . . . . . . .I  
10  
A
DS  
AS  
Single Pulse Avalanche Energy (Note 3) Refer to UIS Curve . . . . . . . . . . . . . . . . . . . . . . . . . E  
o
100  
mJ  
W
Continuous Power Dissipation at T = 25 C (Infinite Heatsink). . . . . . . . . . . . . . . . . . . . . . . . . P  
C
46  
D
o
o
Continuous Power Dissipation, Derate above T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
C
0.37  
60  
W/ C  
o
Thermal Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . θJA  
C/W  
o
Operating Case Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
-40 to 125  
-40 to 150  
300  
C
C
o
Junction and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
C
J
STG  
o
Lead Temperature (For Soldering, 10s)(Lead Tips Only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
C
L
Continuous Drain1-Source2 Voltage Over Operating Junction Temperature Range. . . . . . V  
60  
V
D1S2  
NOTES:  
1. Pulse width limited by maximum junction temperature.  
2. Drain current limited by package construction.  
o
3. V  
= 25V, Start T = 25 C, L = 1.5mH, R  
J
= 50, R = 0. See Figures 2, 12, and 13.  
GS  
DD  
o
Electrical Specifications  
PARAMETER  
T
= 25 C, Unless Otherwise Specified  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
o
Drain-Source Breakdown Voltage  
BV  
DSS  
I
= 100µA, V  
GS  
= 0V  
T
= -40 C to  
60  
-
-
V
D
C
o
125 C  
o
T
= 25 C  
-
1.5  
-
70  
2.3  
105  
-
2.7  
-
V
V
V
C
Gate Threshold Voltage  
V
V
= V , I = 250µA  
GS(TH)  
GS DS D  
o
Drain1-Source2 Breakdown Voltage  
(Across D1)  
BV  
I
V
= 1µA,  
T
T
= 25 C  
D1S2  
D1S2  
C
C
V
= 0V  
G1S1, G2S2  
o
Zero Gate Voltage Drain Current  
I
V
= 60V  
= 0V  
= 25 C  
-
-
1
µA  
DSS  
DS  
V
GS  
o
Drain1-Source2 Current (Through D1)  
I
V
= 60V  
= 0V, V  
T
T
= 25 C  
-
-
-
-
-
0.3  
1
1
µA  
µA  
V
D1S2  
D1S2  
C
C
V
= 0V  
G1S1  
G2S2  
o
= 125 C  
-
Drain-Source On-State Voltage  
(Note 4)  
V
I
I
= 10A, V  
= 10A, V  
= 15V  
= 10V  
0.9  
1.1  
-
1.25  
1.5  
100  
DS(ON)  
D
GS  
V
D
GS  
Forward Gate Current, Drain Short  
Circuited to Source  
I
V
= 0V, V  
= 20V  
nA  
GSSF  
DS  
DS  
GS  
GS  
Reverse Gate Current, Drain Short  
Circuited to Source  
I
V
= 0V, V  
= -20V  
-
-
-100  
nA  
GSSR  
o
Drain-Source On Resistance (Note 4)  
r
V
V
V
V
V
= 15V, I = 10A  
T
T
T
T
= 25 C  
-
-
-
-
-
0.09  
0.15  
0.11  
0.19  
4.5  
0.135  
0.21  
0.15  
0.25  
-
S
DS(ON)  
GS  
GS  
GS  
GS  
DS  
D
C
C
C
C
o
= 15V, I = 10A  
= 125 C  
D
o
= 10V, I = 10A  
= 25 C  
D
o
= 10V, I = 10A  
= 125 C  
D
Forward Transconductance (Note 4)  
g
= 15V, I = 5A  
D
fs  
2
HIP2060  
o
Electrical Specifications  
PARAMETER  
T = 25 C, Unless Otherwise Specified (Continued)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
4
MAX  
UNITS  
ns  
Turn-On Delay Time (Note 5)  
Rise Time (Note 5)  
t
V
= 30V, R = 3Ω  
-
-
-
-
-
-
-
-
-
d(ON)  
DD  
= 10A, V  
L
I
= 10V, R = 50Ω  
D
GS  
G
t
5
-
-
ns  
r
See Figure 14  
Turn-Off Delay Time (Note 5)  
Fall Time (Note 5)  
t
12  
ns  
d(OFF)  
t
6
-
ns  
f
Total Gate Charge (Note 5)  
Gate-Source Charge (Note 5)  
Gate-Drain Charge (Note 5)  
Q
V
= 50V, V  
GS  
= 10V, I = 10A  
10.5  
1.4  
4.9  
230  
12.0  
2.0  
5.5  
-
nC  
nC  
nC  
pF  
g(TOT)  
DS  
See Figures 16 and 17  
D
Q
gs  
gd  
Q
Short-Circuit Input Capacitance,  
Common Source  
C
V
= 25V, V = 0V, f = 1MHz  
GS  
ISS  
DS  
Short-Circuit Output Capacitance,  
Common Source for Upper FET  
C
-
-
150  
225  
40  
-
-
-
pF  
pF  
pF  
OSS(U)  
Short Circuit Output Capacitance  
Common Source for Lower FET  
C
OSS(L)  
Short-Circuit Reverse Transfer  
Capacitance, Common Source  
C
-
RSS  
o
Thermal Resistance Junction to Case  
Thermal Resistance Junction to Ambient  
R
R
-
-
-
-
2.7  
60  
C/W  
θJC  
o
C/W  
θJA  
Source-Drain Diode Specifications  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
SOURCE-TO-DRAIN DIODE SPECIFICATIONS (Across Z1 and Z2)  
Forward Voltage (Note 4)  
V
I
I
I
= 10A, V  
GS  
= 0V  
-
-
-
1.05  
50  
1.25  
V
SD  
SD  
SD  
SD  
Reverse Recovery Time (Across Z1)  
Reverse Recovery Time (Across Z2)  
t
t
= 10A, dI /dt = 100A/µs  
SD  
-
-
ns  
ns  
rr(S1-D1)  
rr(S2-D2)  
= 10A, dI /dt = 100A/µs  
SD  
75  
SOURCE2-TO-DRAIN1 DIODE SPECIFICATIONS D (Across D1)  
Forward Voltage (Note 4)  
Reverse Recovery Time  
DEVICE MATCHING  
Drain-Source On Resistance Match  
NOTES:  
V
I
I
= 10A, V  
GS  
= 0V  
-
-
8.5  
9.5  
-
V
SD  
SD  
t
= 10A, dI /dt = 100A/µs  
SD  
200  
ns  
rr  
SD  
o
r
V
= 10V, I = 10A, T = 25 C  
-
90  
-
%
DS(ON)M  
GS  
D
C
4. Pulse test: Pulse Width 300µs, Duty Cycle 2%.  
5. Independent of operating temperature.  
3
HIP2060  
Typical Performance Curves  
50  
50  
o
T
= 25 C  
o
C
STARTING T = 25 C  
C
10µs  
10  
5
100µs  
10  
5
o
STARTING T = 125 C  
C
1ms  
OPERATION IN THIS  
10ms  
DC  
AREA MAY BE  
1
LIMITED BY r  
DS(ON)  
0.5  
1
5
10  
50  
100  
0.01  
0.1  
1
1
0.001  
t
, TIME IN AVALANCHE (ms)  
V
, DRAIN-TO-SOURCE VOLTAGE (V)  
DS  
AV  
FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING  
FIGURE 1. SAFE-OPERATING AREA CURVE  
20  
20  
o
o
V
= 15V  
= 12V  
= 10V  
= 8V  
25 C  
GS  
-40 C  
V
GS  
V
= 15V  
DS  
V
GS  
15  
10  
5
15  
10  
5
V
GS  
o
150 C  
o
PULSE DURATION = 300µs, T = 25 C  
C
0
0
0
10  
10  
0
2
4
6
8
2
4
6
8
V
, DRAIN-TO-SOURCE VOLTAGE (V)  
DS  
V
, GATE-TO-SOURCE VOLTAGE (V)  
GS  
FIGURE 3. SATURATION CHARACTERISTICS  
FIGURE 4. TRANSFER CHARACTERISTICS  
2.5  
2.0  
1.5  
1.0  
0.5  
0
1.2  
1.1  
1.0  
0.9  
0.8  
PULSE DURATION = 300µs, V  
GS  
= 10V, I = 10A  
D
I
= 100µA  
D
-75  
-25  
25  
75  
125  
175  
-75  
-25  
25  
75  
125  
175  
o
o
T , JUNCTION TEMPERATURE ( C)  
T , JUNCTION TEMPERATURE ( C)  
J
J
FIGURE 5. NORMALIZED r  
DS(ON)  
vs JUNCTION TEMPERATURE  
FIGURE 6. NORMALIZED BV vs JUNCTION TEMPERATURE  
DSS  
4
HIP2060  
Typical Performance Curves (Continued)  
16  
2.0  
V
V
V
= 50V  
= 30V  
= 20V  
DS  
DS  
DS  
V
= V , I = 250µA  
GS  
DS  
D
12  
8
1.5  
1.0  
0.5  
0
o
I
= 10A, T = 25 C  
C
D
4
0
-75  
-25  
25  
75  
125  
175  
0
5
10  
Q, GATE CHARGE (nC)  
15  
20  
o
T , JUNCTION TEMPERATURE ( C)  
J
FIGURE 8. GATE-SOURCE VOLTAGE vs GATE CHARGE  
FIGURE 7. NORMALIZED V  
TEMPERATURE  
vs JUNCTION  
GS(TH)  
12  
10  
1000  
800  
600  
400  
200  
0
o
V
= 0V, f = 1MHz, T = 25 C  
C
GS  
V
= 15V  
= 10V  
GS  
V
GS  
8
6
4
C
C
C
C
RSS  
OSS(U)  
OSS(L)  
ISS  
2
0
0
5
10  
15  
20  
25  
25  
50  
75  
100  
125  
150  
o
V
, DRAIN-TO-SOURCE VOLTAGE (V)  
T , CASE TEMPERATURE ( C)  
DS  
C
FIGURE 9. CAPACITANCE vs VOLTAGE  
FIGURE 10. MAXIMUM CONTINUOUS DRAIN CURRENT vs  
CASE TEMPERATURE  
10  
o
T
= 25 C  
C
D = 1.0  
1
0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
NOTES:  
1. DUTY FACTOR, D = t /t  
0.01  
1
2
2. PEAK T = P  
x (Z ) +T  
SINGLE PULSE  
J
DM  
θJC C  
0.01  
-5  
10  
-4  
10  
-3  
10  
-2  
-1  
o
1
10  
10  
10  
10  
t , RECTANGULAR PULSE DURATION (s)  
1
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE  
5
HIP2060  
Test Circuits and Waveforms  
t
t
AV  
P
V
10V  
0
DS  
V
GS  
L
I
AS  
R
+
-
G
DUT  
V
DD  
V
GS  
I
D
0
BV  
DSS  
t
P
I
0V  
D
V
DS  
0.01Ω  
0
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT  
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS  
t
t
ON  
OFF  
t
d(OFF)  
V
t
DD  
d(ON)  
t
t
f
r
V
DS  
90%  
90%  
R
L
V
DS  
V
10%  
10%  
GS  
DUT  
90%  
50%  
0V  
50%  
R
GS  
V
GS  
PULSE WIDTH  
10%  
FIGURE 14. RESISTIVE SWITCHING TEST CIRCUIT  
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS  
+V  
CURRENT  
DS  
Q
G
REGULATOR  
SAME TYPE  
AS DUT  
10V  
+
-
15V  
BATTERY  
25kΩ  
0.2µF  
0.1µF  
Q
Q
GS  
GD  
V
G
DUT  
I
GS  
0
CHARGE  
FIGURE 16. GATE CHARGE TEST CIRCUIT  
FIGURE 17. BASIC GATE CHARGE WAVEFORM  
6
HIP2060  
R
= 8Ω  
L
30µH  
+36V  
1µF  
0.47µF  
3.9Ω  
0.22µF  
0.22µF  
UF 4002  
0.22µF  
BHB  
HEN  
DIS  
BHO  
BHS  
BLO  
BLS  
VDD  
VCC  
ALS  
ALO  
AHS  
AHO  
10Ω  
30µH  
+12V  
1µF  
VSS  
OUT  
IN+  
10Ω  
HIP2060  
HIP2060  
+12V  
IN-  
HDEL  
LDEL  
AHB  
10Ω  
10Ω  
0.1Ω  
HIP4080A  
100Ω  
0.001µF  
ILIM  
100kΩ  
UF 4002  
0.22µF  
100kΩ  
0.22µF  
+
FEEDBACK  
+
AUDIO INPUT  
250kHz  
FIGURE 18. 70W SWITCHING AUDIO AMPLIFIER APPLICATION CIRCUIT  
Device Model Netlist for HIP2060 Half Bridge Power MOSFET Array  
.SUBCKT HIP2060  
1 2 3 4 5  
X1  
LS1  
X2  
LS2  
LS3  
6
5
7
7
8
1
6
2
4
3
7
7.5n  
3
HIP2060_1  
8
3
7.5n  
7.5n  
HIP2060_1  
.ENDS  
.SUBCKT HIP2060_1  
3
1
2
11  
9
MOS1  
JFET  
D1  
4
10  
5
2
1
4
NMOS1  
1
J1  
D1  
10 D2  
6
DBODY  
1
DBREAK 10  
7
3
D3  
D4  
DSUB  
VBREAK  
C21  
9
7
2
1
DC 90  
850P  
10 50P  
1350P  
10 1.5e-03  
11 17.5e-03  
VMEAS 1.0  
1.0  
1
C23  
2
C24  
2
4
RDRAIN  
3
RSOURCE  
FDSCHRG  
E41  
1
4
5
2
11  
DC 10.0  
11 DC 0.0  
4 1  
VPINCH  
VMEAS  
6
8
8
.MODEL NMOS1 NMOS LEVEL=3 (VTO=2.75 TOX=5e-08 KP=3.150e-03 PHI=0.65 GAMMA=2.55  
+ VMAX=6.42e+07 NSUB=4.33e+16 THETA=0.60973 ETA=0.0015 KAPPA=1.275 L=1u W=5950u)  
.MODEL J1 NJF (VTO=-15.0 BETA=10.736 LAMBDA=1.15e-02 P1.MODEL D1 D (IS=1.0e-15 N=0.03 RS=1.0)  
.MODEL D2 D (IS=3.0e-13 RS=2.5e-03 TT=20N CJO=350e-12)  
.MODEL D3 D (IS=1.0e-13 N=1.0 RS=2.0)  
.MODEL D4 D (IS=1.0e-13 RS=2.0e-03 CJO=197e-12)  
.ENDS  
NOTE: For further discussion of the PSPICE PowerFET Macromodel consult “Spicing-up SPICE II Software for Power MOSFET Modeling”,  
Intersil Application Note AN8610.  
7
HIP2060  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.  
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-  
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may  
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com  
Sales Office Headquarters  
NORTH AMERICA  
EUROPE  
ASIA  
Intersil Corporation  
Intersil SA  
Mercure Center  
100, Rue de la Fusee  
1130 Brussels, Belgium  
TEL: (32) 2.724.2111  
FAX: (32) 2.724.22.05  
Intersil (Taiwan) Ltd.  
Taiwan Limited  
7F-6, No. 101 Fu Hsing North Road  
Taipei, Taiwan  
Republic of China  
TEL: (886) 2 2716 9310  
FAX: (886) 2 2715 3029  
P. O. Box 883, Mail Stop 53-204  
Melbourne, FL 32902  
TEL: (407) 724-7000  
FAX: (407) 724-7240  
8
配单直通车
HIP2060AS3产品参数
型号:HIP2060AS3
是否Rohs认证:不符合
生命周期:Obsolete
IHS 制造商:HARRIS SEMICONDUCTOR
包装说明:FLANGE MOUNT, R-PZFM-T5
Reach Compliance Code:unknown
ECCN代码:EAR99
风险等级:5.75
Is Samacsys:N
雪崩能效等级(Eas):100 mJ
外壳连接:SOURCE
配置:COMPLEX
最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):10 A
最大漏极电流 (ID):10 A
最大漏源导通电阻:0.15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PZFM-T5
JESD-609代码:e0
元件数量:2
端子数量:5
工作模式:ENHANCEMENT MODE
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):46 W
最大脉冲漏极电流 (IDM):25 A
认证状态:Not Qualified
子类别:FET General Purpose Power
表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE
端子位置:ZIG-ZAG
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING
晶体管元件材料:SILICON
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