HJ3669芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

产品型号HJ3669的Datasheet PDF文件预览

Spec. No. : HE6021-B

Issued Date : 1996.04.15

Revised Date : 2000.11.01

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HJ3953

NPN EPITAXIAL PLANAR TRANSISTOR

Description

High-definition CRT display video output, wide-band amp,

Features

• High fT: fT =400MHz

• High breakdown voltage: VCEO=120V (min)

• Small reverse transfer capacitance and excellent HF response

(Ta=25°C)

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature .................................................................................................... +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ................................................................................... 1.3 W

• Maximum Voltages and Currents

BVCEO Collector to Emitter Voltage................................................................................. 120 V

BVCBO Collector to Emitter Voltage................................................................................. 120 V

BVEBO Emitter to Base Voltage........................................................................................... 3 V

IC Collector Current (DC)............................................................................................... 200 mA

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=100uA, IE=0

IC=1mA, IB=0

IE=100uA, IC=0

VCB=80V, IE=0

BVCBO

BVCEO

BVEBO

ICBO

120

100

320

IEBO

VEB=2V, IC=0

*VCE(sat)

*VBE(sat)

*hFE1

*hFE2

IC=30mA, IB=3mA

VCE=10V, IC=10mA

VCE=10V, IC=100mA

VCE=10V, IC=50mA

VCB=30V, f=1MHz

400

2.1

160

MHz

Cob

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank

Range

60-120

100-200

160-320

HSMC Product Specification

Spec. No. : HE6021-B

Issued Date : 1996.04.15

Revised Date : 2000.11.01

Page No. : 2/3

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Current Gain & Collector Current

Saturation Voltage & Collector Current

1000

100

=10V

100

CE(sat)

@ I =10I

0.1

Collector Current (mA)

100

1000

0.1

Collector Current (mA)

100

1000

Output Capacitance & Reverse-Biased Voltage

Saturation Voltage & Collector Current

1000

BE(sat)

@ I =10I

Cob

100

0.1

100

0.1

Collector Current (mA)

100

1000

Reverse-Biased Voltage (V)

HSMC Product Specification

Spec. No. : HE6021-B

Issued Date : 1996.04.15

Revised Date : 2000.11.01

Page No. : 3/3

HI-SINCERITY

MICROELECTRONICS CORP.

TO-252 Dimension

Marking :

HSMC Logo

Part Number

Date Code

Product Series

Rank

Ink Mark

Style : Pin 1.Base 2.Collector 3.Emitter

3-Lead TO-252 Plastic Surface Mount Package

HSMC Package Code : J

*:Typical

Inches

Min. Max.

Millimeters

Inches

Min. Max.

0.0866 0.1102

Millimeters

DIM

Min.

Max.

0.55

1.95

1.50

0.60

6.80

5.80

Min.

Max.

2.80

*2.30

0.90

0.80

5.50

1.60

0.0177 0.0217

0.0650 0.0768

0.0354 0.0591

0.0177 0.0236

0.2520 0.2677

0.2125 0.2283

0.45

1.65

0.90

0.45

6.40

5.40

2.20

*0.0906

0.0354

0.0315

0.2047 0.2165

0.0551 0.0630

5.20

1.40

Notes : 1.Dimension and tolerance based on our Spec. dated May. 05,1996.

2.Controlling dimension : millimeters.

3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.

Material :

• Lead : 42 Alloy ; solder plating

• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its products without notice.

• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory :

• Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.

Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454

• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C

Tel : 886-3-5983621~5 Fax : 886-3-5982931

• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C

Tel : 886-3-5977061 Fax : 886-3-5979220

HSMC Product Specification

型号:	HJ3669
生命周期：	Obsolete
IHS 制造商：	HSMC CORP
包装说明：	,
Reach Compliance Code：	unknown
风险等级：	5.84
Is Samacsys：	N
最大集电极电流 (IC)：	2 A
配置：	Single
最小直流电流增益 (hFE)：	300
最高工作温度：	150 °C
极性/信道类型：	NPN
最大功率耗散 (Abs)：	1.25 W
子类别：	Other Transistors
表面贴装：	YES
Base Number Matches：	1

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