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产品型号HMC313ETR的概述

HMC313ETR概述 HMC313ETR是一款高性能的宽带电流放大器，广泛应用于射频（RF）和微波领域。该芯片能够实现卓越的增益、线性度以及工作频率范围，适合用于模块、基站、无线通信设备及其他高频电子设计中。HMC313ETR由Hittite Microwave Corporation（现为Analog Devices的一部分）生产，因其出色的电气性能和可靠性，成为现代通信系统中不可或缺的关键组件之一。 HMC313ETR详细参数 HMC313ETR芯片的主要参数包括： - 频率范围：DC到20 GHz。该芯片在广泛的频率范围内都能保持良好的性能，使其在多种应用中都能发挥作用。 - 增益：16 dB的典型增益，提供足够的信号放大能力，确保信号能够在传输过程中保持稳定。 - 线性度：具有良好的输出第三次交调失真（OIP3），通常在+30 dBm以上。这使得HMC313ETR在高功率信号...

产品型号HMC313ETR的Datasheet PDF文件预览

HMC313 / 313E

v06.0109

GaAs InGaP HBT MMIC BROADBAND

AMPLIFIER GAIN BLOCK, DC - 6 GHz

Typical Applications

Ideal as a Driver & Ampliﬁer for:

• 2.2 - 2.7 GHz MMDS

Features

P1dB Output Power: +14 dBm

Output IP3: +27 dBm

• 3.5 GHz Wireless Local Loop

• 5 - 6 GHz UNII & HiperLAN

Gain: 17 dB

Single Supply: +5V

High Reliability GaAs HBT Process

Ultra Small Package: SOT26

Included in the HMC-DK001 Designer’s Kit

Functional Diagram

General Description

The HMC313

HMC313E are GaAs InGaP

Heterojunction Bipolar Transistor (HBT) MMIC

ampliﬁers that operate from a single Vcc supply.

The surface mount SOT26 ampliﬁer can be used

as a broadband gain stage or used with external

matching for optimized narrow band applications.

With Vcc biased at +5V, the HMC313(E) offers 17 dB

of gain and +15 dBm of saturated power while only

requiring 50 mA of current.

Electrical Speciﬁcations, T_A= +25 °C, Vcc = +5.0V

Vcc = +5V

Parameter

Units

Min.

Typ.

DC - 6

Max.

Frequency Range

GHz

Gain

Gain Variation Over Temperature

Input Return Loss

0.02

0.03

dB/°C

Output Return Loss

Reverse Isolation

Output Power for 1 dB Compression (P1dB) @ 1.0 GHz

Saturated Output Power (Psat) @ 1.0 GHz

Output Third Order Intercept (IP3) @ 1.0 GHz

Noise Figure

dBm

6.5

Supply Current (Icc)

Note: Data taken with broadband bias tee on device output.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

9 - 26

HMC313 / 313E

v06.0109

GaAs InGaP HBT MMIC BROADBAND

AMPLIFIER GAIN BLOCK, DC - 6 GHz

Gain & Return Loss

Gain vs. Temperature

S11

S21

S22

+ 25 C

+ 85 C

- 40 C

-2

-11

-20

FREQUENCY (GHz)

Input & Output Return Loss

Reverse Isolation

-10

-20

-30

-40

-50

-5

-10

S11

S22

-15

-20

FREQUENCY (GHz)

P1dB vs. Temperature

Psat vs. Temperature

+ 25 C

+ 85 C

- 40 C

+ 25 C

+ 85 C

- 40 C

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

9 - 27

HMC313 / 313E

v06.0109

GaAs InGaP HBT MMIC BROADBAND

AMPLIFIER GAIN BLOCK, DC - 6 GHz

Output IP3 vs. Temperature

Power Compression @ 1 GHz

+ 25 C

+ 85 C

- 40 C

Pout (dBm)

Gain (dB)

PAE (%)

-5

-10

-22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2

INPUT POWER (dBm)

FREQUENCY (GHz)

Power Compression @ 3 GHz

Pout (dBm)

Gain (dB)

PAE (%)

-5

-10

-22

-18

-14

-10

-6

-2

INPUT POWER (dBm)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

9 - 28

HMC313 / 313E

v06.0109

GaAs InGaP HBT MMIC BROADBAND

AMPLIFIER GAIN BLOCK, DC - 6 GHz

Absolute Maximum Ratings

Collector Bias Voltage (Vcc)

RF Input Power (RFIN)(Vcc = +5Vdc)

Junction Temperature

+5.5 Vdc

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

+20 dBm

150 °C

Continuous Pdiss (T = 85 °C)

(derate 3.99 mW/°C above 85 °C)

0.259 W

Thermal Resistance

(junction to lead)

251 °C/W

Storage Temperature

Operating Temperature

ESD Sensitivity (HBM)

-65 to +150 °C

-40 to +85 °C

Class 1A

Outline Drawing

NOTES:

1. LEADFRAME MATERIAL: COPPER ALLOY

2. DIMENSIONS ARE IN INCHES [MILLIMETERS]

3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND

Package Information

Part Number

Package Body Material

Lead Finish

MSL Rating

MSL1 ^[1]

Package Marking ^[3]

H313

XXXX

HMC313

Low Stress Injection Molded Plastic

Sn/Pb Solder

313E

XXXX

MSL1 ^[2]

HMC313E

RoHS-compliant Low Stress Injection Molded Plastic

100% matte Sn

[1] Max peak reﬂow temperature of 235 °C

[2] Max peak reﬂow temperature of 260 °C

[3] 4-Digit lot number XXXX

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

9 - 29

HMC313 / 313E

v06.0109

GaAs InGaP HBT MMIC BROADBAND

AMPLIFIER GAIN BLOCK, DC - 6 GHz

Pin Descriptions

Pin Number

Function

Description

Interface Schematic

This pin is DC coupled. An off chip DC blocking capacitor

is required.

RFOUT

This pin is DC coupled. An off chip DC blocking capacitor

is required.

RFIN

GND

2, 4-6

These pins must be connected to RF/DC ground.

Application Circuit

Recommended Bias Resistor Values

for Icc = 50 mA, Rbias = (Vs - 5.0) / Icc

Supply Voltage (Vs)

R^BIASVALUE

0 Ω

20 Ω

¼ W

62 Ω

½ W

R^BIASPOWER RATING

Note:

1. Select Rbias to achieve desired Vcc voltage on Pin 1.

2. External Blocking Capacitors are required on Pins 1 & 3.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

9 - 30

HMC313 / 313E

v06.0109

GaAs InGaP HBT MMIC BROADBAND

AMPLIFIER GAIN BLOCK, DC - 6 GHz

Evaluation PCB

List of Materials for Evaluation PCB 104217 ^[1]

The circuit board used in the ﬁnal application

should use RF circuit design techniques. Signal

lines should have 50 ohm impedance while the

package ground leads should be connected directly

to the ground plane similar to that shown. A suffi-

cient number of via holes should be used to connect

the top and bottom ground planes. The evaluation

circuit board shown is available from Hittite upon

request.

Item

J1 - J2

C1 - C2

Description

PCB Mount SMA Connector

100 pF Capacitor, 0402 Pkg.

100 pF Capacitor, 0805 Pkg.

22 nH Inductor, 0805 Pkg.

22 ꢀ Resistor, 0805 Pkg.

HMC313 / HMC313E

[2]

PCB

104196 Evaluation PCB

[1] Reference this number when ordering complete evaluation PCB

[2] Circuit Board Material: Arlon 25FR or Roger 4350

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

9 - 31

HMC313ETR相关文章

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HMC313ETR产品参数

型号:	HMC313ETR
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	8.42
其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω
构造：	COMPONENT
增益：	14 dB
最大输入功率 (CW)：	20 dBm
JESD-609代码：	e3
最大工作频率：	6000 MHz
最小工作频率：
最高工作温度：	85 °C
最低工作温度：	-40 °C
射频/微波设备类型：	WIDE BAND LOW POWER
端子面层：	Matte Tin (Sn)
Base Number Matches：	1

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产品型号HMC313ETR的概述

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