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HMC347C8

v01.0404

GaAs MMIC SMT HIGH ISOLATION

SPDT SWITCH, DC - 8.0 GHz

Typical Applications

The HMC347C8 is ideal for:

• Telecom Infrastructure

Features

Isolation: 50 dB @ 2.5 GHz

36 dB @ 8.0 GHz

Insertion Loss: 2.0 dB Typical

Non-Reﬂective Design

• Microwave Radio & VSAT

• Military Radios, Radar & ECM

• Test Instrumentation

Surface Mount Ceramic Package

8

Functional Diagram

General Description

The HMC347C8 is a broadband high isolation non-

reﬂective GaAs MESFET SPDT switch in a non-her-

metic surface mount ceramic package. Covering DC

to 8.0 GHz, the switch features >50 dB isolation up

to 2 GHz and >35 dB isolation up to 8.0 GHz. The

switch operates using complementary negative con-

trol voltage logic lines of -5/0V and requires no bias

supply. This SPDT is an excellent replacement for the

HMC132C8 SPDT.

Electrical Specifications, T_A= +25° C, With 0/-5V Control, 50 Ohm System

Parameter

Frequency

Min.

Typ.

Max.

Units

DC - 2.0 GHz

DC - 6.0 GHz

DC - 8.0 GHz

1.7

2.0

2.4

2.0

2.4

2.8

dB

Insertion Loss

DC - 2.0 GHz

DC - 6.0 GHz

DC - 8.0 GHz

49

35

32

54

40

36

dB

Isolation

DC - 2.0 GHz

DC - 6.0 GHz

DC - 8.0 GHz

10

7

6

13

10

9

dB

Return Loss

“On State”

“Off State”

DC - 2.0 GHz

DC - 6.0 GHz

DC - 8.0 GHz

9

6

dB

Return Loss RF1, RF2

Input Power for 1 dB Compression

Input Third Order Intercept

0.5 - 8.0 GHz

19

38

23

43

dBm

(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)

Switching Characteristics

tRISE, tFALL (10/90% RF)

tON, tOFF (50% CTL to 10/90% RF)

DC - 8.0 GHz

3

6

ns

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 196

HMC347C8

v01.0404

GaAs MMIC SMT HIGH ISOLATION

SPDT SWITCH, DC - 8.0 GHz

Insertion Loss

Isolation

0

-10

-1

-2

-3

-4

-5

RF1

RF2

-20

-30

-40

-50

-60

-70

8

+ 25C

+ 85C

- 40C

0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

6

7

8

FREQUENCY (GHz)

Return Loss

0.1 and 1 dB Input Compression Point

0

30

1 dB Compression Point

0.1 dB Compression Point

-5

-10

-15

-20

25

20

15

10

RFC

RF1, RF2 ON

RF1, RF2 OFF

0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

6

7

8

FREQUENCY (GHz)

Input Third Order Intercept Point

50

45

40

35

30

+25C

+85C

-40C

0

1

2

3

4

5

6

7

8

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 197

HMC347C8

v01.0404

GaAs MMIC SMT HIGH ISOLATION

SPDT SWITCH, DC - 8.0 GHz

Absolute Maximum Ratings

Control Voltages

RF Input Power (Vctl = -5V)

Control Voltage Range (A & B)

Channel Temperature

+27 dBm

State

Bias Condition

+0.5V to -7.5 Vdc

150 °C

Low

0 to -0.2V @ 10 uA Max.

High

-5V @ 10 uA Typ. to -7V @ 40 uA Typ. ( 0.5 Vdc)

Thermal Resistance

(Insertion Loss Path)

440 °C/W

540 °C/W

Truth Table

Thermal Resistance

(Terminated Path)

Control Input

Signal Path State

8

Storage Temperature

Operating Temperature

ESD Sensitivity (HBM)

-65 to +150 °C

-55 to +85 °C

Class 1A

A

B

RFC to RF1

RFC to RF2

High

Low

High

On

Off

On

Caution: Do not “Hot Switch” power levels greater than +13

dBm (Vctl = 0/-5 Vdc).

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: WHITE ALUMINA 92%

2. LEAD, PACKAGE BOTTOM MATERIAL: COPPER

3. PLATING: ELECTROLYTIC GOLD 100-200 MICROINCHES, OVER

ELECTROLYTIC NICKEL 100-250 MICROINCHES.

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. PACKAGE LENGTH AND WIDTH DIMENSIONS DO NOT INCLUDE LID

SEAL PROTRUSION .005 PER SIDE.

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 198

HMC347C8

v01.0404

GaAs MMIC SMT HIGH ISOLATION

SPDT SWITCH, DC - 8.0 GHz

Suggested Driver Circuit

8

Pin Descriptions

Pin Number

Function

Description

Interface Schematic

This pin is DC coupled and matched to 50 Ohm. Blocking

capacitors are required if RF line potential is not equal to 0V.

1, 4, 7

RFC, RF1, RF2

Package bottom must also

be connected to PCB RF ground.

2, 3, 8

GND

5

6

CTLA

CTLB

See truth table and control voltage table.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 199

HMC347C8

v01.0404

GaAs MMIC SMT HIGH ISOLATION

SPDT SWITCH, DC - 8.0 GHz

Evaluation PCB

8

List of Materials for Evaluation PCB 107261 ^[1]

The circuit board used in the ﬁnal application should

be generated with proper RF circuit design tech-

niques. Signal lines at the RF port should have 50

ohm impedance and the package ground leads and

package bottom should be connected directly to the

ground plane similar to that shown above. The eval-

uation circuit board shown above is available from

Hittite Microwave Corporation upon request.

Item

Description

J1 - J3

J4 - J6

U1

PCB Mount SMA RF Connector

DC Pin

HMC347C8 SPDT Switch

102088 Evaluation PCB

[2]

PCB

[1] Reference this number when ordering complete evaluation PCB

[2] Circuit Board Material: Rogers 4350

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 200

HMC347C8

v01.0404

GaAs MMIC SMT HIGH ISOLATION

SPDT SWITCH, DC - 8.0 GHz

Notes:

8

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 201

型号:	HMC347G8
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	HITTITE MICROWAVE CORP
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.62
Is Samacsys：	N
特性阻抗：	50 Ω
构造：	COMPONENT
最大输入功率 (CW)：	26.99 dBm
最大插入损耗：	2.7 dB
JESD-609代码：	e4
最大工作频率：	8000 MHz
最小工作频率：
最高工作温度：	85 °C
最低工作温度：	-55 °C
射频/微波设备类型：	SPDT
端子面层：	Gold (Au) - with Nickel (Ni) barrier
Base Number Matches：	1

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