HMC416LP4
v01.0604
MICROWAVE CORPORATION
MMIC VCO w/ BUFFER
AMPLIFIER, 2.75 - 3.0 GHz
Typical Applications
Features
Low noise MMIC VCO w/Buffer Amplifier for:
• Wireless Infrastructure
• Industrial Controls
Pout: +4.5 dBm
Phase Noise: -114 dBc/Hz @100 k Hz
No External Resonator Needed
Single Supply: 3V @ 37 mA
QFN Leadless SMT Package, 16 mm2
• Test Equipment
• Military
Functional Diagram
General Description
The HMC416LP4 is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) MMIC VCO with
integrated resonator, negative resistance device,
varactor diode, and buffer amplifier. Covering 2.75
to 3.0 GHz, the VCO’s phase noise performance
is excellent over temperature, shock, vibration
and process due to the oscillator’s monolithic
structure. Power output is 4.5 dBm typical from
a single supply of 3V @ 37 mA. The voltage
controlled oscillator is packaged in a low cost
leadless QFN 4 x 4 mm surface mount package.
15
Electrical Specifications,TA = +25° C, Vcc = +3V
Parameter
Min.
1.5
0
Typ.
2.75 - 3.0
4.5
Max.
Units
GHz
dBm
dBc/Hz
V
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
-114
10
10
Supply Current (Icc) (Vcc = +3.0V)
Tune Port Leakage Current
37
9
mA
µA
Output Return Loss
dB
Harmonics
2nd
3rd
-5
-16
dBc
dBc
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +5V
Frequency Drift Rate
3
-1
MHz pp
MHz/V
MHz/°C
0.3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
15 - 66