HMC441芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号HMC441的概述

HMC441芯片概述 HMC441是一款由Hittite Microwave Corporation（现为安森美半导体）制造的高性能射频(RF)开关芯片。它设计用于频率范围为0.5GHz至18GHz的应用场合，在移动通信、卫星通信以及无线通信等领域具有广泛的使用潜力。该芯片作为单刀双掷（SPDT）射频开关，能够实现快速、可靠的信号切换，同时具备很低的插入损耗和高度的隔离度。 HMC441在各类射频电路中表现出色，适用于大多数需要高线性度和无失真的 RF 信号传输的场合。采用先进的 CMOS 工艺，使其在各种条件下都能保持高性能和稳定性。HMC441 的高隔离度特性使其能够有效地防止信号之间的干扰，从而提高了整套系统的信噪比和整体性能。 HMC441的详细参数 HMC441的主要技术参数包括： - 工作频率： 0.5GHz至18GHz - 插入损耗：在1GHz时，最大为0.3dB，至1...

产品型号HMC441的Datasheet PDF文件预览

HMC441

v02.0304

MICROWAVE CORPORATION

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 6.0 - 18.0 GHz

Typical Applications

The HMC441 is ideal for use as a medium power

ampliﬁer for:

Features

Gain: 15.5 dB

Saturated Power: +22 dBm @ 23% PAE

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• VSAT

Single Supply Voltage:

+5.0 V w/ Optional Gate Bias

50 Ohm Matched Input/Output

• LO Driver for HMC Mixers

• Military EW & ECM

Functional Diagram

General Description

The HMC441 is an efﬁcient GaAs PHEMT MMIC

Medium Power Ampliﬁer which operates between

6.0 and 18.0 GHz*. The ampliﬁer provides 15.5

dB of gain, +22 dBm of saturated power, and 23%

PAE from a +5.0 V supply voltage. An optional

gate bias is provided to allow adjustment of gain,

RF output power, and DC power dissipation. The

HMC441 ampliﬁer can easily be integrated into

Multi-Chip-Modules (MCMs) due to its small

(.99mm²) size. The backside of the die is both

RF and DC ground, simplifying the assembly

process and reducing performance variation.

All data is tested with the chip in a 50 Ohm test

ﬁxture connected via 0.025mm (1 mil) diameter

wire bonds of minimal length 0.31mm (12 mils).

Vgg1, Vgg2: Optional Gate Bias

Electrical Speciﬁcations,T_A= +25° C, Vdd1 = Vdd2 = 5V, Vgg1 = Vgg2 = Open

Parameter

Min.

Typ.

7.0 - 8.0

15.5

Max. Min.

Typ.

8.0 - 12.5

16.5

Max. Min.

Typ.

12.5 - 14.0

15.5

Max. Min.

Typ.

14.0 - 15.5

14.5

Max.

Units

GHz

Frequency Range

Gain

Gain Variation Over Temperature

Input Return Loss

Output Return Loss

0.015 0.02

dB/ °C

4.5

Output Power for 1 dB Compression (P1dB) 15.5 18.5

dBm

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

5.0

Supply Current (Idd)

*Contact HMC for Electrical Spec Limits for 6-7 & 15.5 - 18 GHz.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 60

HMC441

v02.0304

MICROWAVE CORPORATION

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 6.0 - 18.0 GHz

GaAs MMIC SUB-HARMONICALLY _GP_aU_inM_vP_s.E_TD_emM_peI_rX_aE_tuR_re17 - 25 GHz

Broadband Gain & Return Loss

S21

S11

S22

-5

-10

-15

-20

-25

-30

+25 C

+85 C

-55 C

10 11 12 13 14 15 16 17 18

FREQUENCY (GHz)

Input Return Loss vs.Temperature

Output Return Loss vs.Temperature

-2

-5

-10

-15

-20

-25

-30

-35

+25 C

+85 C

-55 C

+25 C

-4

+85 C

-6

-8

-55 C

-10

-12

-14

-16

-18

-20

10 11 12 13 14 15 16 17 18

FREQUENCY (GHz)

10 11 12 13 14 15 16 17 18

FREQUENCY (GHz)

P1dB vs.Temperature

Psat vs.Temperature

+25 C

+85 C

-55 C

+25 C

+85 C

-55 C

10 11 12 13 14 15 16 17 18

FREQUENCY (GHz)

10 11 12 13 14 15 16 17 18

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 61

HMC441

v02.0304

MICROWAVE CORPORATION

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 6.0 - 18.0 GHz

Power Compression @ 11 GHz

Power Compression @ 15 GHz

Pout (dBm)

Gain (dB)

PAE (%)

-10

-8

-6

-4

-2

-10 -8 -6 -4 -2

10 12 14

INPUT POWER (dBm)

Output IP3 vs.Temperature

Noise Figure vs.Temperature

+25 C

+85 C

-55 C

+25 C

+85 C

-55 C

10 11 12 13 14 15 16 17 18

FREQUENCY (GHz)

10 11 12 13 14 15 16 17 18

FREQUENCY (GHz)

Gain & Power vs. Supply Voltage @ 11 GHz

Reverse Isolation vs.Temperature

-10

-20

-30

-40

-50

-60

+25 C

+85 C

-55 C

Gain

P1dB

Psat

2.7

3.3

3.6

3.9

4.2

4.5

4.8

5.1

5.4

10 11 12 13 14 15 16 17 18

FREQUENCY (GHz)

Vdd Supply Voltage (Vdc)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 62

HMC441

v02.0304

MICROWAVE CORPORATION

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 6.0 - 18.0 GHz

Gain, Power & Output IP3

vs. Gate Voltage @ 12 GHz

210

180

150

120

Idd

Gain

P1dB

Psat

OIP3

-1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1

Vgg1, Vgg2 Gate Voltage (Vdc)

Typical Supply Current vs. Vdd

Absolute Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2)

Gate Bias Voltage (Vgg1,Vgg2)

RF Input Power (RFin)(Vdd = +5.0 Vdc)

Channel Temperature

+5.5 Vdc

-8.0 to 0 Vdc

+20 dBm

175 °C

Vdd (V)

+4.5

Idd (mA)

+5.0

+5.5

Continuous Pdiss (T= 85 °C)

(derate 10 mW/°C above 85 °C)

+2.7

0.9 W

+3.0

Thermal Resistance

(channel to die bottom)

100 °C/W

+3.3

Note: Ampliﬁer will operate over full voltage ranges shown above

Storage Temperature

Operating Temperature

-65 to +150 °C

-55 to +85 °C

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 63

HMC441

v02.0304

MICROWAVE CORPORATION

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 6.0 - 18.0 GHz

Outline Drawing

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

Pad Descriptions

Pin Number

Function

Description

Interface Schematic

This pad is AC coupled and matched to 50 Ohms from

7 - 15.5 GHz.

RF IN

Power Supply Voltage for the ampliﬁer. An external bypass

capacitor of 100 pF is required.

2, 3

Vdd1, Vdd2

RF OUT

This pad is AC coupled and matched to 50 Ohms from

7 -15.5 GHz.

Optional gate control for ampliﬁer. If left open, the ampliﬁer

will run at standard current. Negative voltage applied will

reduce current.

5, 6

Vgg1, Vgg2

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 64

HMC441

v02.0304

MICROWAVE CORPORATION

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 6.0 - 18.0 GHz

(a) Assembly for single

supply voltage operation

(b) Assembly with optional

gate bias voltage operation

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 65

HMC441

v02.0304

MICROWAVE CORPORATION

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 6.0 - 18.0 GHz

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han-

dling, Mounting, Bonding Note).

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin ﬁlm substrates are recommended for

bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin ﬁlm substrates must be used, the

die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One

way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader

(moly-tab) which is then attached to the ground plane (Figure 2).

Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-

to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 66

HMC441

v02.0304

MICROWAVE CORPORATION

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 6.0 - 18.0 GHz

Handling Precautions

Follow these precautions to avoid permanent damage.

Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.

Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.

Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize

inductive pick-up.

General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the

chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ﬁngers.

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting

surface should be clean and ﬂat.

Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature

of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip

to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for

attachment.

Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy ﬁllet is observed around the

perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire Bonding

Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of

150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum

level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or

substrate. All bonds should be as short as possible <0.31mm (12 mils).

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 67

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HMC441产品参数

型号:	HMC441
是否无铅：	含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	HITTITE MICROWAVE CORP
包装说明：	DIE OR CHIP
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8542.33.00.01
风险等级：	8.61
特性阻抗：	50 Ω
构造：	COMPONENT
增益：	12 dB
最大输入功率 (CW)：	20 dBm
JESD-609代码：	e4
功能数量：	1
最大工作频率：	18000 MHz
最小工作频率：	6000 MHz
最高工作温度：	85 °C
最低工作温度：	-55 °C
封装等效代码：	DIE OR CHIP
电源：	5 V
射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers
最大压摆率：	115 mA
技术：	GAAS
端子面层：	Gold (Au)

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