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产品型号HMC463LP5的概述

HMC463LP5芯片概述 HMC463LP5是一款高性能的混合信号集成电路，主要用于RF（射频）和微波应用。作为高频小信号放大器，它在通信、传感器和雷达系统中得到了广泛的应用。HMC463LP5具有良好的线性度、低噪声特性和宽带宽，使其成为现代电子设计中一个极具吸引力的选择。 HMC463LP5的详细参数 HMC463LP5的性能参数非常出色。芯片工作频段覆盖从DC到50 GHz，能够满足多个频段的应用需求。下面列出该芯片的一些主要电气参数： - 频率范围：DC至50 GHz - 增益：大约16 dB - 输入/输出功率：+17 dBm（输出） - 噪声系数：约为3 dB - 电源电压：+5V - 工作温度范围：-40°C至+85°C - 封装类型：LCC（Leadless Chip Carrier）此外，HMC463LP5具有低静态功耗，这使得它在可持续电源设计中更加受欢迎。其宽...

产品型号HMC463LP5的Datasheet PDF文件预览

HMC463LP5

v00.0404

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

AGC AMPLIFIER, 2.0 - 20.0 GHz

Typical Applications

The HMC463LP5 is ideal for:

• Telecom Infrastructure

• Microwave Radio & VSAT

• Military EW, ECM & C³I

• Test Instrumentation

Features

Gain: 13 dB

Noise Figure: 2.8 dB @ 10 GHz

P1dB Output Power: +18 dBm @ 10 GHz

Supply Voltage: +5.0V @ 60 mA

50 Ohm Matched Input/Output

25 mm²Leadless Package

• Fiber Optics

Functional Diagram

General Description

The HMC463LP5 is a GaAs MMIC PHEMT Low

Noise AGC Distributed Ampliﬁer packaged in a

leadless 5 x 5 mm surface mount package which

operates between 2 and 20 GHz. The ampliﬁer

provides 13 dB of gain, 3.0 dB noise ﬁgure and 18

dBm of output power at 1 dB gain compression

while requiring only 60 mA from a +5V supply.

An optional gate bias (Vgg2) is provided to allow

Adjustable Gain Control (AGC) of 8 dB typical.

Gain ﬂatness is excellent at ±0.5 dB from 6 - 18

GHz making the HMC463LP5 ideal for EW, ECM

RADAR and test equipment applications. The

HMC463LP5 LNA I/Os are internally matched to

50 Ohms and are internally DC blocked.

Vgg2: Optional Gate Bias for AGC

Electrical Speciﬁcations,T_A= +25° C, Vdd= 5V, Idd= 60 mA*

Parameter

Min.

Typ.

2.0 - 6.0

Max.

Min.

Typ.

6.0 - 18.0

Max.

Min.

Typ.

18.0 - 20.0

Max.

Units

GHz

Frequency Range

Gain

Gain Flatness

±0.5

0.010

3.0

±0.5

0.010

3.0

±0.5

0.010

5.5

Gain Variation Over Temperature

Noise Figure

0.015

4.0

0.015

5.0

0.015

6.5

dB/ °C

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

dBm

Supply Current

(Idd) (Vdd= 5V, Vgg1= -0.9V Typ.)

* Adjust Vgg1 between -2 to -0V to achieve Idd= 60 mA typical.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8 - 262

HMC463LP5

v00.0404

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

AGC AMPLIFIER, 2.0 - 20.0 GHz

GaAs MMIC SUB-HARMONICALLY _GP_aU_inM_vP_s.E_TD_emM_peI_rX_aE_tuR_re17 - 25 GHz

Gain & Return Loss

S21

S11

S22

-5

-10

-15

-20

-25

-30

+25C

+85C

-40C

10 12 14 16 18 20 22

FREQUENCY (GHz)

Input Return Loss vs.Temperature

Output Return Loss vs.Temperature

+25C

+85C

-40C

-5

+85C

-40C

-5

-10

-15

-20

-25

-30

-10

-15

-20

10 12 14 16 18 20 22

FREQUENCY (GHz)

Noise Figure vs.Temperature

Reverse Isolation vs.Temperature

-5

+25C

-10

+85C

-40C

-15

+25C

+85C

-40C

-20

-25

-30

-35

-40

-45

-50

-55

-60

10 12 14 16 18 20 22

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8 - 263

HMC463LP5

v00.0404

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

AGC AMPLIFIER, 2.0 - 20.0 GHz

GaAs MMIC SUB-HARMONICALLY _PP_sU_atM_vP_s.E_TeD_mM_peI_rX_atE_uR_re17 - 25 GHz

P1dB vs.Temperature

+25C

+85C

-40C

+25C

+85C

-40C

10 12 14 16 18 20 22

FREQUENCY (GHz)

Gain, Power & Noise Figure

Output IP3 vs.Temperature

vs. Supply Voltage @ 10 GHz, Fixed Vgg1

4.5

3.5

2.5

1.5

+25C

+85C

-40C

Gain

P1dB

Psat

0.5

Noise Figure

10 12 14 16 18 20 22

4.5

5.5

FREQUENCY (GHz)

Vdd (Vdc)

Gain, P1dB & Output IP3

vs. Control Voltage @ 10 GHz

Noise Figure & Supply Current

vs. Control Voltage @ 10 GHz

5.5

4.5

3.5

2.5

1.5

Gain

P1dB

OIP3

Noise Figure

Idd

0.5

-2

-4

-1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2

0.2 0.4 0.6 0.8

-1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2

0.2 0.4 0.6 0.8

Vgg2 (Vdc)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8 - 264

HMC463LP5

v00.0404

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

AGC AMPLIFIER, 2.0 - 20.0 GHz

Gain @ Several Control Voltages

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+9.0 Vdc

Gate Bias Voltage (Vgg1)

-2.0 to 0 Vdc

(Vdd -9.0)

Vdc to +2.0 Vdc

Gate Bias Voltage (Vgg2)(AGC)

RF Input Power (RFin)(Vdd = +5.0 Vdc) +23 dBm

Channel Temperature

150 °C

3.25 W

-2

-4

-6

-8

Vgg-1.3 V

Vgg=-1.2 V

Vgg=-1.1 V

Vgg=-1.0V

Vgg=-0.9 V

Vgg=-0.8 V

Vgg=-0.6 V

Vgg=-0.4 V

Vgg=-0.2 V

Vgg=0 V

Continuous Pdiss (T= 85 °C)

(derate 50 mW/°C above 85 °C)

Thermal Resistance

(channel to ground paddle)

-10

-12

20 °C/W

10 12 14 16 18 20 22

Storage Temperature

Operating Temperature

-65 to +150 °C

-40 to +85 °C

FREQUENCY (GHz)

Typical Supply Current vs. Vdd

Vdd (V)

Idd (mA)

+4.5

+5.0

+5.5

Outline Drawing

NOTES:

1. ALL DIMENSIONS IN INCHES [MILLIMETERS]

2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS

3. DIE THICKNESS IS 0.004 (0.100)

4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE

5. BACKSIDE METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND

7. BOND PAD METALIZATION: GOLD

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8 - 265

HMC463LP5

v00.0404

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

AGC AMPLIFIER, 2.0 - 20.0 GHz

Pad Descriptions

Pad Number

Function

Description

Interface Schematic

1, 3, 4, 6-14,

16-20, 22-29,

31, 32

No connection. These pins may be connected to RF ground.

Performance will not be affected.

N/C

Optional gate control if AGC is required.

Leave Vgg2 open circuited if AGC is not required.

Vgg2

This pad is AC coupled and matched to 50 Ohms

from 2.0 - 20.0 GHz

RFIN

Vgg1

Gate control for ampliﬁer. Adjust to achieve Idd= 60 mA.

This pad is AC coupled and matched to 50 Ohms

from 2.0 - 20.0 GHz

RFOUT

Vdd

Power supply voltage for the ampliﬁer.

External bypass capacitors are required

Ground

Paddle

GND

Grpund paddle must be connected to RF/DC ground.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8 - 266

HMC463LP5

v00.0404

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

AGC AMPLIFIER, 2.0 - 20.0 GHz

Evaluation PCB

List of Materials for Evaluation PCB 108341*

The circuit board used in the ﬁnal application should use

RF circuit design techniques. Signal lines should have

50 ohm impedance while the package ground leads and

package bottom should be connected directly to the

ground plane similar to that shown.A sufﬁcient number of

VIA holes should be used to connect the top and bottom

ground planes.The evaluation board should be mounted

to an appropriate heat sink. The evaluation circuit board

shown is available from Hittite upon request.

Item

Description

J1 - J2

J3 - J4

C1 - C3

C4 - C6

C7 - C8

SRI K Connector

2 mm Molex Header

100 pF Capacitor, 0402 Pkg.

1000 pF Capacitor, 0603 Pkg.

4.7 µF Capacitor, Tantalum

HMC463LP5

PCB**

107339 Evaluation PCB

** Circuit Board Material: Rogers 4350

* Reference this number when ordering complete evaluation PCB.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8 - 267

HMC463LP5相关文章

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HMC463LP5产品参数

型号:	HMC463LP5
Brand Name：	Analog Devices Inc
是否无铅：	含铅
是否Rohs认证：	不符合
生命周期：	Active
IHS 制造商：	ANALOG DEVICES INC
包装说明：	LCC32,.2SQ,20
针数：	32
制造商包装代码：	HCP-32-1
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8542.31.00.01
风险等级：	1.34
Is Samacsys：	N
其他特性：	LOW NOISE
特性阻抗：	50 Ω
构造：	COMPONENT
增益：	8 dB
最大输入功率 (CW)：	23 dBm
JESD-609代码：	e0
安装特点：	SURFACE MOUNT
功能数量：	1
端子数量：	32
最大工作频率：	20000 MHz
最小工作频率：	2000 MHz
最高工作温度：	85 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装等效代码：	LCC32,.2SQ,20
电源：	5 V
射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers
表面贴装：	YES
技术：	GAAS
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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