HMC516LC5TR应用文章市场行情现货热卖使用介绍供应商报价-中国IC网-芯三七

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产品型号HMC516LC5TR的概述

芯片HMC516LC5TR的概述 HMC516LC5TR是一种高速、高性能的射频（RF）功率放大器，由著名的射频和微波解决方案供应商——Analog Devices Inc.（ADI）提供。该芯片广泛应用于通信、雷达和电子战等领域，是设计高频、低噪声及高线性度放大器电路的理想选择。 HMC516LC5TR的核心功能是在频率范围内实现高功率增益和良好的线性度。该芯片可以在适应不同频率下灵活工作，特别适合用于微波频段，其频率响应覆盖了从0.1 GHz到20 GHz的宽频带。这种宽频带特性使得它在许多应用中都变得极具吸引力，尤其是在需要多频点操作的场合。芯片HMC516LC5TR的详细参数 HMC516LC5TR具有众多优良的性能指标，其主要参数包括： - 工作频率范围：0.1 GHz 至 20 GHz - 增益：最低增益为 18 dB，最大增益可达 20 dB - 输出功率：在1 GHz...

产品型号HMC516LC5TR的Datasheet PDF文件预览

HMC516LC5

v02.1208

SMT PHEMT LOW NOISE

AMPLIFIER, 9 - 18 GHz

Typical Applications

The HMC516LC5 is ideal for use as a LNA or driver

ampliﬁer for:

Features

Noise Figure: 2 dB

Gain: 20 dB

• Point-to-Point Radios

• Point-to-Multi-Point Radios & VSAT

• Test Equipment and Sensors

• Military

OIP3: +25 dBm

Single Supply: +3V @ 65 mA

50 Ohm Matched Input/Output

RoHS Compliant 5x5 mm Package

Functional Diagram

General Description

The HMC516LC5 is a high dynamic range GaAs

PHEMT MMIC Low Noise Ampliﬁer (LNA) housed in

a leadless “Pb free” RoHS compliant SMT package.

The HMC516LC5 provides 20 dB of small signal

gain, 2 dB of noise ﬁgure and has an output IP3 of

+25 dBm. The P1dB output power of +13 dBm enables

the LNA to also function as a LO driver for balanced,

I/Q or image reject mixers. The HMC516LC5 allows

the use of surface mount manufacturing techniques.

Electrical Speciﬁcations, T_A= +25° C, Vdd 1, 2, 3 = +3V

Parameter

Min.

Typ.

9 - 12

Max.

Min.

Typ.

12 - 18

20.5

0.015

2.0

Max.

Units

GHz

Frequency Range

Gain

17.5

Gain Variation Over Temperature

Noise Figure

0.015

2.0

0.025

2.5

0.025

2.5

dB/ °C

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Current (Idd)(Vdd = +3V)

dBm

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 138

HMC516LC5

v02.1208

SMT PHEMT LOW NOISE

AMPLIFIER, 9 - 18 GHz

Broadband Gain & Return Loss

Gain vs. Temperature

S21

S11

S22

+25C

+85C

-40C

-5

-10

-15

-20

FREQUENCY (GHz)

Input Return Loss vs. Temperature

Output Return Loss vs. Temperature

+25C

+85C

-40C

-5

-10

-15

-20

-25

-30

+25C

+85C

-40C

-5

-10

-15

-20

FREQUENCY (GHz)

Noise Figure vs. Temperature

Output IP3 vs. Temperature

+25C

+85C

-40C

+25C

+85C

-40C

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 139

HMC516LC5

v02.1208

SMT PHEMT LOW NOISE

AMPLIFIER, 9 - 18 GHz

P1dB vs.Temperature

Psat vs.Temperature

+25C

+85C

-40C

+25C

+85C

-40C

FREQUENCY (GHz)

Reverse Isolation vs.Temperature

Power Compression @ 12 GHz

-10

-20

Pout

Gain

PAE

-30

+25C

+85C

-40C

-40

-50

-60

-70

-80

-22 -20 -18 -16 -14 -12 -10 -8

-6

-4

-2

FREQUENCY (GHz)

INPUT POWER (dBm)

Gain, Noise Figure & Power vs.

Supply Voltage @ 12 GHz

Gain

P1dB

Noise Figure

2.5

3.5

Vdd (V)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 140

HMC516LC5

v02.1208

SMT PHEMT LOW NOISE

AMPLIFIER, 9 - 18 GHz

Typical Supply Current vs. Vdd

Absolute Maximum Ratings

Vdd (Vdc)

Idd (mA)

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)

RF Input Power (RFIN)(Vdd = +3.0 Vdc)

Channel Temperature

+4 Vdc

+2.5

+5 dBm

+3.0

175 °C

1.25 W

+3.5

Continuous Pdiss (T= 85 °C)

(derate 14 mW/°C above 85 °C)

Note: Ampliﬁer will operate over full voltage range shown

above.

Thermal Resistance

(channel to die bottom)

71 °C/W

Storage Temperature

Operating Temperature

ESD Sensitivity (HBM)

-65 to +150 °C

-40 to +85 °C

Class 1A

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA

2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES

GOLD OVER 50 MICROINCHES MINIMUM NICKEL

3. DIMENSIONS ARE IN INCHES [MILLIMETERS]

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE

SOLDERED TO PCB RF GROUND

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 141

HMC516LC5

v02.1208

SMT PHEMT LOW NOISE

AMPLIFIER, 9 - 18 GHz

Pin Descriptions

Pin Number

Function

Description

Interface Schematic

1, 2, 6-19,

23-25, 27,

29, 31, 32

This pin may be connected to RF/DC ground.

Performance will not be affected.

N/C

RFIN

This pin is AC coupled and matched to 50 Ohms.

Power Supply Voltage for the ampliﬁer. External bypass

capacitors of 100 pF and 2.2 μF are required.

30, 28, 26

Vdd1, 2, 3

RFOUT

GND

This pin is AC coupled and matched to 50 Ohms.

These pins and package bottom must be

connected to RF/DC ground.

3, 5, 20, 22

Application Circuit

Component Value

C1, C2, C3

C4, C5, C6

100 pF

2.2 μF

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 142

HMC516LC5

v02.1208

SMT PHEMT LOW NOISE

AMPLIFIER, 9 - 18 GHz

Evaluation PCB

List of Materials for Evaluation PCB 110431 ^[1]

The circuit board used in the ﬁnal application should

use RF circuit design techniques. Signal lines

should have 50 ohm impedance while the package

ground leads and exposed paddle should be con-

nected directly to the ground plane similar to that

shown. A sufficient number of via holes should be

used to connect the top and bottom ground planes.

The evaluation board should be mounted to an

appropriate heat sink. The evaluation circuit board

shown is available from Hittite upon request.

Item

Description

J1 - J2

PCB Mount K Connector

2 mm DC Header

C1 - C3

C4 - C6

100 pF Capacitor, 0402 Pkg.

2.2 μF Capacitor, Tantalum

HMC516LC5 Ampliﬁer

109001 Evaluation PCB

[2]

PCB

[1] Reference this number when ordering complete evaluation PCB

[2] Circuit Board Material: Rogers 4350

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 143

HMC516LC5TR相关文章

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HMC516LC5TR产品参数

型号:	HMC516LC5TR
是否Rohs认证：	符合
生命周期：	Transferred
包装说明：	LCC32,.2SQ,20
Reach Compliance Code：	unknown
风险等级：	8.47
安装特点：	SURFACE MOUNT
功能数量：	1
端子数量：	32
最高工作温度：	85 °C
最低工作温度：	-40 °C
封装主体材料：	CERAMIC
封装等效代码：	LCC32,.2SQ,20
电源：	3 V
射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers
最大压摆率：	88 mA
表面贴装：	YES
技术：	GAAS
Base Number Matches：	1

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产品型号HMC516LC5TR的概述

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