HMC634LC4TR-R5全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

HMC634LC4

v02.1109

GaAs PHEMT MMIC DRIVER

AMPLIFIER, 5 - 20 GHz

Typical Applications

The HMC634LC4 is ideal for:

• Point-to-Point Radios

Features

Gain: 21 dB

9

P1dB: +22 dBm

• Point-to-Multi-Point Radios & VSAT

• LO Driver for Mixers

Saturated Power: +23 dBm @ 17% PAE

Single Supply Voltage: +5V @180 mA

50 Ohm Matched Input/Output

24 Lead 4x4mm SMT Package: 16mm²

• Military & Space

Functional Diagram

General Description

The HMC634LC4 is a GaAs PHEMT MMIC Driver

Ampliﬁer in a leadless 4 x 4 mm ceramic surface

mount package which operates between 5 and 20

GHz The ampliﬁer provides up to 21 dB of gain, +29

dBm Output IP3, and +22 dBm of output power at 1 dB

gain compression, while requiring 180 mA from a +5V

supply. The HMC634LC4 is an ideal driver ampliﬁer

for microwave radio applications from 5 to 20 GHz,

and may be biased at +5V, 130 mA to provide lower

gain with optimized PAE. The ampliﬁer’s I/Os are DC

blocked and matched to 50 Ohms with no external

matching required.

Electrical Speciﬁcations, T_A= +25° C, Vdd_1-4= 5V, Idd= 180 mA ^[1]

Parameter

Min.

Typ.

5 - 16

21

Max.

Min.

17

Typ.

16 - 20

20

Max.

Units

GHz

dB

Frequency Range

Gain

18

Gain Variation Over Temperature

Input Return Loss

Output Return Loss

0.025

18

0.035

0.020

14

0.030

dB/ °C

dB

14

13

dB

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

19

22

16

20

dBm

dB

23

20.5

28

Output Third Order Intercept (IP3)

29

Noise Figure

7.5

Supply Current (Idd) (Idd = Idd₁+ Idd₂+ Idd₃+ Idd₄)

[1] Adjust Vgg between -2 to 0V to achieve Idd= 180 mA Typical.

180

mA

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

9 - 162

HMC634LC4

v02.1109

GaAs PHEMT MMIC DRIVER

AMPLIFIER, 5 - 20 GHz

Broadband Gain & Return Loss

Gain vs. Temperature

30

20

10

0

30

25

20

15

10

5

9

S11

S21

S22

+25 C

+85 C

-40 C

-10

-20

-30

0

2

4

6

8

10 12 14 16 18 20 22 24

FREQUENCY (GHz)

2

4

6

8

10 12 14 16 18 20 22 24

FREQUENCY (GHz)

Input Return Loss vs. Temperature

Output Return Loss vs. Temperature

0

-5

-10

-15

+25 C

-40 C

+85 C

-10

-15

-20

-25

-30

-20

+25 C

+85 C

-25

-30

-40 C

2

4

6

8

10 12 14 16 18 20 22 24

FREQUENCY (GHz)

2

4

6

8

10 12 14 16 18 20 22 24

FREQUENCY (GHz)

P1dB vs. Temperature

Psat vs. Temperature

30

28

26

24

22

20

18

16

28

26

24

22

20

18

16

+25 C

+85 C

-40 C

+25 C

+85 C

-40 C

4

6

8

10

12

14

16

18

20

22

4

6

8

10

12

14

16

18

20

22

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

9 - 163

HMC634LC4

v02.1109

GaAs PHEMT MMIC DRIVER

AMPLIFIER, 5 - 20 GHz

Power Compression @ 12.5 GHz

Power Compression @ 20 GHz

30

25

20

15

10

5

30

9

Pout (dBm)

Gain (dB)

PAE (%)

25

20

15

10

5

Pout (dBm)

Gain (dB)

PAE (%)

0

-10

-8

-6

-4

-2

0

2

4

6

-10

-8

-6

-4

-2

0

2

4

6

INPUT POWER (dBm)

Output IP3 vs. Temperature

Noise Figure vs. Temperature

36

16

32

28

+25 C

+85 C

-40 C

12

8

24

20

16

+25 C

+85 C

-40 C

4

0

2

4

6

8

10

12

14

16

18

20

6

8

10

12

14

16

18

FREQUENCY (GHz)

Gain & Power vs.

Supply Voltage @ 12.5 GHz

Reverse Isolation vs. Temperature

25

0

-10

Gain

P1dB

Psat

24

23

22

21

20

-20

+25 C

+85 C

-40 C

-30

-40

-50

-60

-70

-80

4.5

4.7

4.9

5.1

5.3

5.5

2

4

6

8

10 12 14 16 18 20 22 24

FREQUENCY (GHz)

Vdd (V)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

9 - 164

HMC634LC4

v02.1109

GaAs PHEMT MMIC DRIVER

AMPLIFIER, 5 - 20 GHz

Gain, Power & Output IP3

vs. Gate Voltage @ 12.5 GHz

Absolute Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3,

Vdd4)

210

180

150

120

90

35

30

25

20

15

+5.5 Vdc

9

Idd

Gate Bias Voltage (Vgg)

-3 to 0 Vdc

+10 dBm

175 °C

RF Input Power (RFIN)(Vdd = +5 Vdc)

Channel Temperature

Continuous Pdiss (T= 85 °C)

(derate 11.17 mW/°C above 85 °C)

1 W

Thermal Resistance

(channel to package bottom)

89.46 °C/W

Gain

P1dB

Psat

IP3

Storage Temperature

Operating Temperature

-65 to +150 °C

-40 to +85 °C

-0.88

-0.84

-0.8

-0.76

-0.72

Vgg (V)

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Typical Supply Current vs. Vdd

Vdd (V)

4.5

Idd (mA)

177

180

183

5.0

5.5

Note: Ampliﬁer will operate over full voltage ranges shown above

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA

2. LEAD AND GROUND PADDLE PLATING: 30-80

MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL.

3. DIMENSIONS ARE IN INCHES [MILLIMETERS].

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.

5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-

6. ALL GROUND LEADS AND GROUND PADDLE MUST

BE SOLDERED TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

9 - 165

HMC634LC4

v02.1109

GaAs PHEMT MMIC DRIVER

AMPLIFIER, 5 - 20 GHz

Pin Descriptions

Pin Number

Function

Description

Interface Schematic

9

1, 5 - 8,

10 - 14, 18,

21, 23

The pins are not connected internally; however, all data

shown herein was measured with these pins connected to

RF/DC ground externally.

N/C

Package Bottom must

be connected to RF/DC ground.

2, 4, 15, 17

3

GND

RFIN

This pin is AC coupled

and matched to 50 Ohms.

Gate control for ampliﬁer, please follow “MMIC Ampliﬁer

Biasing Procedure” Application Note: See application

circuit for required external components.

9

Vgg

This pin is AC coupled

and matched to 50 Ohms.

16

RFOUT

24, 22,

20, 19

Vdd1, Vdd2,

Vdd3, Vdd4

Power Supply Voltage for the ampliﬁer. See application

circuit for required external components.

Application Circuit

Component

C1 - C5

Value

100 pF

1000 pF

2.2 μF

C6 - C10

C11 - C15

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

9 - 166

HMC634LC4

v02.1109

GaAs PHEMT MMIC DRIVER

AMPLIFIER, 5 - 20 GHz

Evaluation PCB

9

List of Materials for Evaluation PCB 115857 ^[1]

The circuit board used in the ﬁnal application

should use RF circuit design techniques. Signal

lines should have 50 ohm impedance while the

package ground leads and exposed paddle should

be connected directly to the ground plane similar to

that shown. A sufficient number of via holes should

be used to connect the top and bottom ground

planes. The evaluation board should be mounted

to an appropriate heat sink. The evaluation circuit

board shown is available from Hittite upon request.

Item

Description

J1 - J2

VD1 - VD4

C1 - C5

C6 - C10

C11 - C15

U1

2.92 mm PC Mount K-Connector

DC Pin

100 pF Capacitor, 0402 Pkg.

1000 pF Capacitor, 0603 Pkg.

2.2 μF Capacitor, Tantalum

HMC634LC4 Driver Ampliﬁer

115855 Evaluation PCB

[2]

PCB

[1] Reference this number when ordering complete evaluation PCB

[2] Circuit Board Material: Rogers 4350

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

9 - 167

型号:	HMC634LC4TR-R5
Brand Name：	Analog Devices Inc
是否无铅：	含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ANALOG DEVICES INC
包装说明：	LCC24,.16SQ,20
针数：	24
制造商包装代码：	HE-24-1
Reach Compliance Code：	compliant
风险等级：	5.82
安装特点：	SURFACE MOUNT
功能数量：	1
端子数量：	24
最高工作温度：	85 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装等效代码：	LCC24,.16SQ,20
电源：	5 V
子类别：	RF/Microwave Amplifiers
表面贴装：	YES
技术：	GAAS

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