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产品型号HMC755LP4E的Datasheet PDF文件预览

HMC755LP4E  
v00.0709  
GaAs MMIC 1 WATT  
POWER AMPLIFIER, 2.3 - 2.8 GHz  
Typical Applications  
The HMC755LP4E is Ideal for:  
• Cellular/3G & LTE/4G  
Features  
High Gain: 31 dB  
High PAE: 28% @ +33 dBm Pout  
Low EVM: 2.5% @ Pout = +25 dBm  
with 54 Mbps OFDM Signal  
• WiMAX, WiBro & Fixed Wireless  
• Military & SATCOM  
High Output IP3: +43 dBm  
• Test Equipment  
Integrated Detector & Power Control  
24 Lead 4x4mm QFN Package: 16mmꢀ  
11  
Functional Diagram  
General Description  
The HMC755LP4E is a high gain, high linearity GaAs  
InGaP HBT MMIC Power amplifier covering 2.3 to  
2.8 GHz. The amplifier provides 31 dB of gain and  
+33 dBm of saturated power from a single +5V  
supply. The power control pins (VEN1, 2, 3) can be  
used to reduce the RF output power/quiescent cur-  
rent, or for full power down of the PA. The integrated  
output power detector (VDET) is internally coupled  
and requires no external components. For +25 dBm  
OFDM output power (64 QAM, 54 Mbps), the HMC-  
755LP4E achieves an error vector magnitude (EVM)  
of only 2.5% making it ideal for WiMAX/LTE/4G Appli-  
cations. The amplifier is packaged in a compact QFN  
SMT package and requires a minimum of external  
matching components.  
Electrical Specifications, TA = +25 °C, Vcc1, 2, 3 = +5V, VEN1, 2, 3 = +5V, Vcs = +5V  
Parameter  
Min.  
Typ.  
2.3 - 2.8  
31  
Max.  
Units  
GHz  
dB  
Frequency Range  
Gain  
28  
Gain Variation Over Temperature  
Input Return Loss  
Output Return Loss  
0.05  
10  
7
dB/ °C  
dB  
dB  
Output Power for 1dB Compression (P1dB)  
Saturated Output Power (Psat)  
28  
31  
33  
43  
dBm  
dBm  
dBm  
[1]  
Output Third Order Intercept (IP3)  
Error Vector Magnitude @ 2.5 GHz  
(54 Mbps OFDM Signal @ +22 dBm Pout)  
2.5  
%
Supply Current (Icc1 + Icc2 + Icc3)  
Control Current (Ien1 + Ien2 + Ien3)  
Bias Current (Ics)  
400  
480  
16  
600  
mA  
mA  
mA  
12  
[1] Two-tone output power of +25 dBm per tone, 1 MHz spacing.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 344  
HMC755LP4E  
v00.0709  
GaAs MMIC 1 WATT  
POWER AMPLIFIER, 2.3 - 2.8 GHz  
Broadband Gain & Return Loss  
Gain vs. Temperature  
40  
30  
20  
10  
0
40  
35  
30  
S21  
S11  
S22  
25  
+25 C  
20  
15  
10  
+85 C  
- 40 C  
11  
-10  
-20  
1.6  
1.9  
2.2  
2.5  
2.8  
3.1  
3.4  
3.7  
4
4.3  
2
2.2  
2.4  
2.6  
2.8  
3
3.2  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Input Return Loss vs. Temperature  
Output Return Loss vs. Temperature  
0
0
+25 C  
+85 C  
- 40 C  
-5  
-5  
-10  
-15  
-10  
+25 C  
+85 C  
- 40 C  
-15  
-20  
2
2.2  
2.4  
2.6  
2.8  
3
3.2  
2
2.2  
2.4  
2.6  
2.8  
3
3.2  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Reverse Isolation vs. Temperature  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
+25 C  
+85 C  
- 40 C  
2
2.2  
2.4  
2.6  
2.8  
3
3.2  
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 345  
HMC755LP4E  
v00.0709  
GaAs MMIC 1 WATT  
POWER AMPLIFIER, 2.3 - 2.8 GHz  
P1dB vs. Temperature  
Psat vs. Temperature  
40  
40  
35  
30  
25  
20  
35  
30  
+25 C  
+85 C  
- 40 C  
+25 C  
+85 C  
- 40 C  
11  
25  
20  
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
2.7  
2.8  
2.9  
3
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
2.7  
2.8  
2.9  
3
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Output IP3 vs. Temperature @ 26 dBm  
Output IP3 vs. Temperature @ 2.4 GHz  
50  
50  
45  
40  
45  
40  
+25 C  
+25 C  
+85 C  
- 40 C  
35  
35  
+85 C  
- 40 C  
30  
30  
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
2.7  
2.8  
2.9  
3
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
FREQUENCY (GHz)  
SINGLE TONE POUT (dBm)  
VDET Output Voltage vs. Temperature  
Power Compression @ 2.5 GHz  
3.5  
50  
3
+25 C  
40  
30  
20  
10  
0
+85 C  
- 40 C  
2.5  
2
1.5  
1
Pout  
Gain  
PAE  
0.5  
0
13  
17  
21  
25  
29  
33  
-20  
-15  
-10  
-5  
0
5
INPUT POWER (dBm)  
OUTPUT POWER (dBm)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 346  
HMC755LP4E  
v00.0709  
GaAs MMIC 1 WATT  
POWER AMPLIFIER, 2.3 - 2.8 GHz  
Gain & Power vs. Supply Voltage  
Noise Figure vs. Temperature  
50  
40  
30  
20  
12  
10  
8
6
4
11  
+25 C  
+85 C  
- 40 C  
Gain  
P1dB  
IP3  
2
0
4.5  
5
5.5  
2.2  
2.3  
2.4  
2.5  
2.6  
2.7  
2.8  
2.9  
3
SUPPLY VOLTAGE (V)  
FREQUENCY (GHz)  
EVM vs. Frequency  
Power Dissipation  
(54 Mbps OFDM Signal)  
6
7
5.5  
6
Max Pdiss @ +85C  
5
4.5  
4
2.3 GHz  
5
4
3
2
1
0
2.4 GHz  
2.5 GHz  
2.6 GHz  
2.7 GHz  
2.8 GHz  
3.5  
3
2.5  
2
-20  
-15  
-10  
-5  
0
5
15  
17  
19  
21  
23  
25  
27  
INPUT POWER (dBm)  
OUTPUT POWER (dBm)  
EVM vs. Temperature @ 2.5 GHz  
(54 Mbps OFDM Signal)  
7
6
5
4
3
2
1
0
+25 C  
+85 C  
- 40 C  
15  
17  
19  
21  
23  
25  
27  
OUTPUT POWER (dBm)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 347  
HMC755LP4E  
v00.0709  
GaAs MMIC 1 WATT  
POWER AMPLIFIER, 2.3 - 2.8 GHz  
Typical Supply Current vs.  
Supply Voltage  
Absolute Maximum Ratings  
Collector Bias Voltage (Vcc1, Vcc2, Vcc3)  
5.5V  
Vcc +0.5  
Vcc (V)  
Icq (mA)  
430  
Control Voltage (VEN1, 2, 3)  
4.5  
RF Input Power (RFIN)(Vcc = +5V)  
Junction Temperature  
+5 dBm  
150 °C  
5.0  
480  
5.5  
530  
Continuous Pdiss (T = 85 °C)  
(derate 80 mW/°C above 85 °C)  
5.2 W  
Thermal Resistance  
(junction to ground paddle)  
12.5 °C/W  
11  
Storage Temperature  
Operating Temperature  
-65 to +150 °C  
-40 to +85 °C  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
Outline Drawing  
NOTES:  
1. LEADFRAME MATERIAL: COPPER ALLOY  
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]  
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.  
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.  
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.  
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.  
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE  
SOLDERED TO PCB RF GROUND.  
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED  
LAND PATTERN.  
Package Information  
Part Number  
Package Body Material  
Lead Finish  
MSL Rating  
MSL3 [2]  
Package Marking [1]  
H755  
XXXX  
HMC755LP4E  
RoHS-compliant Low Stress Injection Molded Plastic  
100% matte Sn  
[1] 4-Digit lot number XXXX  
[2] Max peak reflow temperature of 260 °C  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 348  
HMC755LP4E  
v00.0709  
GaAs MMIC 1 WATT  
POWER AMPLIFIER, 2.3 - 2.8 GHz  
Pin Descriptions  
Pin Number  
Function  
Description  
Interface Schematic  
These pins are not connected internally. However, all data  
shown herein was measured with these pins connected to  
RF/DC ground.  
1, 3, 5, 6, 12 - 14,  
18, 19, 21, 22, 24  
N/C  
Ground: Backside of package has exposed metal paddle  
that must be connected to ground thru a short path.  
Vias under the device are required.  
2
4
GND  
11  
This pin is DC coupled  
and matched to 50 Ohms.  
RFIN  
VCS  
7
DC power supply pin for bias circuitry.  
Power control pins. For max power these  
pins should be connected to 5V. This voltage  
can be reduced, or R1-R4 resistor values increased  
to reduce the quiescent current.  
8 - 10  
VEN1 - 3  
For full power down, apply V <0.5V  
11  
VDET  
DC voltage output proportional to RFOUT signal.  
RF output and DC bias for the output stage. External  
RF matching, bypass capacitors, and pull up choke are  
required as shown in the application circuit.  
15, 16, 17  
RFOUT  
Power supply voltage for the second amplifier stage.  
External bypass capacitors and pull up choke are required  
as shown in the application schematic.  
20  
23  
Vcc2  
Vcc1  
Power supply voltage for the first amplifier stage. External  
bypass capacitors are required as shown in the application  
schematic.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 349  
HMC755LP4E  
v00.0709  
GaAs MMIC 1 WATT  
POWER AMPLIFIER, 2.3 - 2.8 GHz  
Evaluation PCB  
11  
List of Materials for Evaluation PCB 123643 [1]  
Item  
Description  
Item  
U1  
Description  
J1, J2  
J3, J4  
C1 - C10  
C11  
PCB Mount SMA Connector  
2MM Molex Header  
HMC755LP4E Power Amplifier  
123641 Eval Board  
[2]  
PCB  
100 pF Capacitor, 0402 Pkg.  
3 pF Capacitor Ultra Low ESD, 0603 Pkg.  
1.5 pF Capacitor Ultra Low ESD, 0603 Pkg.  
1000 pF Capacitor, 0603 Pkg.  
2.2 μF Capacitor, Tantalum  
4.7 μF Capacitor, Tantalum  
10000 pF Capacitor, 0402 Pkg.  
10 nH Inductor, 0603 Pkg.  
0 Ohm Resistor, 0402 Pkg.  
200 Ohm Resistor, 0402 Pkg.  
300 Ohm Resistor, 0402 Pkg.  
130 Ohm Resistor, 0402 Pkg.  
[1] Reference this number when ordering complete evaluation PCB  
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR  
C12  
The circuit board used in the application should  
use RF circuit design techniques. Signal lines sho-  
uld have 50 Ohm impedance while the package  
ground leads and exposed paddle should be con-  
nected directly to the ground plane similar to that  
shown. A sufficient number of via holes should  
be used to connect the top and bottom ground  
planes and the evaluation board should be mounted  
to an appropriate heat sink. The evaluation circuit  
board shown is available from Hittite upon request.  
C13 - C15  
C16  
C17  
C18 - C12  
L1  
R1  
R2  
R3  
R4  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 350  
HMC755LP4E  
v00.0709  
GaAs MMIC 1 WATT  
POWER AMPLIFIER, 2.3 - 2.8 GHz  
Application Circuit  
11  
TL1  
27 Ohm  
0.033”  
6.6°  
TL2  
Impedance  
50 Ohm  
0.133”  
38°  
Physical Length  
Electrical Length  
PCB Material: 10 mil Rogers 4350 or Arlon 25FR  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 351  
配单直通车
HMC755LP4E产品参数
型号:HMC755LP4E
是否无铅:不含铅
是否Rohs认证:符合
生命周期:Transferred
IHS 制造商:HITTITE MICROWAVE CORP
包装说明:LCC24,.16SQ,20
Reach Compliance Code:compliant
ECCN代码:EAR99
风险等级:5.66
Is Samacsys:N
其他特性:SMA
特性阻抗:50 Ω
构造:COMPONENT
增益:28 dB
最大输入功率 (CW):5 dBm
JESD-609代码:e3
安装特点:SURFACE MOUNT
功能数量:1
端子数量:24
最大工作频率:2800 MHz
最小工作频率:2300 MHz
最高工作温度:85 °C
最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY
封装等效代码:LCC24,.16SQ,20
电源:5 V
射频/微波设备类型:WIDE BAND MEDIUM POWER
子类别:RF/Microwave Amplifiers
最大压摆率:600 mA
表面贴装:YES
技术:GAAS
端子面层:Matte Tin (Sn)
Base Number Matches:1
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