HMC755LP4E
v00.0709
GaAs MMIC 1 WATT
POWER AMPLIFIER, 2.3 - 2.8 GHz
Typical Applications
The HMC755LP4E is Ideal for:
• Cellular/3G & LTE/4G
Features
High Gain: 31 dB
High PAE: 28% @ +33 dBm Pout
Low EVM: 2.5% @ Pout = +25 dBm
with 54 Mbps OFDM Signal
• WiMAX, WiBro & Fixed Wireless
• Military & SATCOM
High Output IP3: +43 dBm
• Test Equipment
Integrated Detector & Power Control
24 Lead 4x4mm QFN Package: 16mmꢀ
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Functional Diagram
General Description
The HMC755LP4E is a high gain, high linearity GaAs
InGaP HBT MMIC Power amplifier covering 2.3 to
2.8 GHz. The amplifier provides 31 dB of gain and
+33 dBm of saturated power from a single +5V
supply. The power control pins (VEN1, 2, 3) can be
used to reduce the RF output power/quiescent cur-
rent, or for full power down of the PA. The integrated
output power detector (VDET) is internally coupled
and requires no external components. For +25 dBm
OFDM output power (64 QAM, 54 Mbps), the HMC-
755LP4E achieves an error vector magnitude (EVM)
of only 2.5% making it ideal for WiMAX/LTE/4G Appli-
cations. The amplifier is packaged in a compact QFN
SMT package and requires a minimum of external
matching components.
Electrical Specifications, TA = +25 °C, Vcc1, 2, 3 = +5V, VEN1, 2, 3 = +5V, Vcs = +5V
Parameter
Min.
Typ.
2.3 - 2.8
31
Max.
Units
GHz
dB
Frequency Range
Gain
28
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
0.05
10
7
dB/ °C
dB
dB
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
28
31
33
43
dBm
dBm
dBm
[1]
Output Third Order Intercept (IP3)
Error Vector Magnitude @ 2.5 GHz
(54 Mbps OFDM Signal @ +22 dBm Pout)
2.5
%
Supply Current (Icc1 + Icc2 + Icc3)
Control Current (Ien1 + Ien2 + Ien3)
Bias Current (Ics)
400
480
16
600
mA
mA
mA
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[1] Two-tone output power of +25 dBm per tone, 1 MHz spacing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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