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    • 深圳市一线半导体有限公司

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    产品型号HSB649T的Datasheet PDF文件预览

    Spec. No. : HT200103  
    Issued Date : 2001.12.01  
    Revised Date : 2005.12.02  
    Page No. : 1/4  
    HI-SINCERITY  
    MICROELECTRONICS CORP.  
    HSB649T  
    SILICON PNP EPITAXIAL PLANAR TRANSISTOR  
    Description  
    Low frequency power amplifier.  
    TO-126  
    Absolute Maximum Ratings (TA=25°C)  
    • Maximum Temperatures  
    Storage Temperature ........................................................................................................................... -55 ~ +150 °C  
    Junction Temperature ................................................................................................................... +150 °C Maximum  
    • Maximum Power Dissipation  
    Total Power Dissipation ....................................................................................................................................... 1 W  
    Total Power Dissipation (TC=25°C).................................................................................................................... 20 W  
    • Maximum Voltages and Currents  
    BVCBO Collector to Base Voltage...................................................................................................................... -180 V  
    BVCEO Collector to Emitter Voltage................................................................................................................... -160 V  
    BVEBO Emitter to Base Voltage............................................................................................................................. -5 V  
    IC Collector Current (DC) .................................................................................................................................. -1.5 A  
    IC Collector Current (Pulse).................................................................................................................................. -3 A  
    Thermal Characteristics  
    R
    θJC Thermal Resistance, Junction to Case (Max.)..................................................................................... 6.25 °C/W  
    Electrical Characteristics (TA=25°C)  
    Symbol  
    BVCBO  
    BVCEO  
    BVEBO  
    ICBO  
    Min.  
    Typ.  
    Max.  
    Unit  
    V
    Test Conditions  
    -180  
    -
    -
    IC=-1mA, IE=0  
    IC=-10mA, IB=0  
    IE=-1mA, IC=0  
    -160  
    -
    -
    -
    V
    -5  
    -
    V
    -
    -
    -10  
    -1  
    -1.5  
    200  
    -
    uA  
    V
    VCB=-160V, IE=0  
    *VCE(sat)  
    *VBE(on)  
    *hFE1  
    -
    -
    -
    -
    IC=-500mA, IB=-50mA  
    IC=-150mA, VCE=-5V  
    IC=-150mA, VCE=-5V  
    IC=-500mA, VCE=-5V  
    IC=-150mA ,VCE=-5V  
    VCB=-10V, f=1MHz, IE=0  
    V
    100  
    30  
    -
    -
    *hFE2  
    -
    fT  
    140  
    27  
    -
    MHz  
    pF  
    Cob  
    -
    -
    *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%  
    Classification Of hFE1  
    Rank  
    C
    Range  
    100-200  
    HSB649T  
    HSMC Product Specification  
    Spec. No. : HT200103  
    Issued Date : 2001.12.01  
    Revised Date : 2005.12.02  
    Page No. : 2/4  
    HI-SINCERITY  
    MICROELECTRONICS CORP.  
    Characteristics Curve  
    Current Gain & Collector Current  
    Saturation Voltage & Collector Current  
    1000  
    10000  
    1000  
    100  
    75oC  
    CE(sat)  
    V
    C
    B
    @ I =10I  
    125oC  
    25oC  
    75oC  
    100  
    125oC  
    25oC  
    CE  
    hFE @ V =5V  
    10  
    10  
    1
    10  
    100  
    Collector Current-I (mA)  
    1000  
    10000  
    1
    10  
    100  
    1000  
    10000  
    C
    C
    Collector Current-I (mA)  
    Saturation Voltage & Collector Current  
    Capacitance & Reverse-Biased Voltage  
    1000  
    100  
    10  
    1
    25oC  
    75oC  
    Cob  
    125oC  
    BE(ON)  
    V
    CE  
    @ V =5V  
    100  
    1
    10  
    100  
    1000  
    10000  
    0.1  
    1
    10  
    100  
    C
    Collector Current-I (mA)  
    Reverse Biased Voltage (V)  
    Safe Operating Area  
    10  
    PT=1ms  
    PT=1s  
    PT=100ms  
    1
    0.1  
    0.01  
    1
    10  
    100  
    CE  
    1000  
    Forward Voltage-V (V)  
    HSB649T  
    HSMC Product Specification  
    Spec. No. : HT200103  
    Issued Date : 2001.12.01  
    Revised Date : 2005.12.02  
    Page No. : 3/4  
    HI-SINCERITY  
    MICROELECTRONICS CORP.  
    TO-126 Dimension  
    DIM  
    A
    B
    C
    D
    F
    G
    H
    J
    K
    L
    M
    N
    Min.  
    3.60  
    6.90  
    13.00  
    7.20  
    0.65  
    1.00  
    4.52  
    1.14  
    0.90  
    0.45  
    2.92  
    2.00  
    Max.  
    4.40  
    7.60  
    16.50  
    8.50  
    0.88  
    1.42  
    4.62  
    1.50  
    1.50  
    0.60  
    3.40  
    2.70  
    Marking:  
    D
    J
    A
    B
    Pb Free Mark  
    (Note)  
    Pb-Free: " . "  
    M
    H
    S B  
    Normal: None  
    6 4 9 T  
    1
    2
    3
    Date Code  
    Control Code  
    K
    N
    Note: Green label is used for pb-free packing  
    Pin Style: 1.Emitter 2.Collector 3.Base  
    C
    G
    F
    Material:  
    • Lead solder plating: Sn60/Pb40 (Normal),  
    Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)  
    • Mold Compound: Epoxy resin family,  
    flammability solid burning class: UL94V-0  
    Unit: mm  
    H
    L
    3-Lead TO-126  
    Plastic Package  
    HSMC Package Code: T  
    Important Notice:  
    • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.  
    • HSMC reserves the right to make changes to its products without notice.  
    • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
    • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
    Head Office And Factory:  
    • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.  
    Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454  
    • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C  
    Tel: 886-3-5983621~5 Fax: 886-3-5982931  
    HSB649T  
    HSMC Product Specification  
    Spec. No. : HT200103  
    Issued Date : 2001.12.01  
    Revised Date : 2005.12.02  
    Page No. : 4/4  
    HI-SINCERITY  
    MICROELECTRONICS CORP.  
    Soldering Methods for HSMC’s Products  
    1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%  
    2. Reflow soldering of surface-mount devices  
    Figure 1: Temperature profile  
    t
    P
    Critical Zone  
    to T  
    TP  
    T
    L
    P
    Ramp-up  
    TL  
    t
    L
    Tsmax  
    Tsmin  
    tS  
    Preheat  
    Ramp-down  
    25  
    t 25oC to Peak  
    Time  
    Profile Feature  
    Average ramp-up rate (TL to TP)  
    Preheat  
    Sn-Pb Eutectic Assembly  
    <3oC/sec  
    Pb-Free Assembly  
    <3oC/sec  
    - Temperature Min (Tsmin  
    )
    100oC  
    150oC  
    150oC  
    200oC  
    - Temperature Max (Tsmax  
    - Time (min to max) (ts)  
    Tsmax to TL  
    )
    60~120 sec  
    60~180 sec  
    - Ramp-up Rate  
    <3oC/sec  
    <3oC/sec  
    Time maintained above:  
    - Temperature (TL)  
    - Time (tL)  
    183oC  
    217oC  
    60~150 sec  
    240oC +0/-5oC  
    60~150 sec  
    260oC +0/-5oC  
    Peak Temperature (TP)  
    Time within 5oC of actual Peak  
    10~30 sec  
    20~40 sec  
    Temperature (tP)  
    Ramp-down Rate  
    <6oC/sec  
    <6oC/sec  
    Time 25oC to Peak Temperature  
    <6 minutes  
    <8 minutes  
    3. Flow (wave) soldering (solder dipping)  
    Products  
    Pb devices.  
    Peak temperature  
    245oC ±5oC  
    260oC +0/-5oC  
    Dipping time  
    5sec ±1sec  
    5sec ±1sec  
    Pb-Free devices.  
    HSB649T  
    HSMC Product Specification  
    配单直通车
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