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产品型号HSMP-3834-TR1的概述

HSMP-3834-TR1 芯片概述及详细参数分析一、HSMP-3834-TR1 的概述 HSMP-3834-TR1 是一款高性能的发光二极管（LED）组件，广泛应用于光通信、光模块和激光器驱动等领域。该组件的设计目的是为了实现高效率、高亮度的光输出，同时实现较小的封装尺寸，便于集成到各种电子设备中。其优异的特性使得 HSMP-3834-TR1 成为市场上较为热门的选择之一，在光电子领域具有重要的技术价值和商业意义。二、详细参数 1. 结构参数 - 类型：LED 光源 - 封装形式：表面贴装(SMD) - 颜色：红色（波长范围通常在620nm至630nm之间） - 发光强度：在指定电流下的典型发光强度可达到 2000 mcd - 最小工作电压：1.8V - 最大工作电压：2.2V - 驱动电流：20 mA（推荐值） 2. 电气特性 - 反向电流：最大值为 0.5 µA - 极...

产品型号HSMP-3834-TR1的Datasheet PDF文件预览

Surface Mount PIN Diodes

Technical Data

HSMP-38XX and

HSMP-48XX Series

required. The HSMP-48XX series

Features

Package Lead Code

Identification

are special products featuring

ultra low parasitic inductance in

the SOT-23 package, specifically

designed for use at frequencies

which are much higher than the

upper limit for conventional

SOT-23 PIN diodes. The

HSMP-4810 diode is a low distor-

tion attenuating PIN designed for

operation to 3 GHz. The

HSMP-4820 diode is ideal for

limiting and low inductance

switching applications up to

1.5 GHz. The HSMP-4890 is

optimized for low current switch-

ing applications up to 3 GHz.

• Diodes Optimized for:

Low Current Switching

Low Distortion Attenuating

Ultra-Low Distortion

Switching

SINGLE

Microwave Frequency

Operation

COMMON

ANODE

SERIES

• Surface Mount SOT-23 and

SOT-143 Packages

Single and Dual Versions

Tape and Reel Options

Available

COMMON

CATHODE

UNCONNECTED

PAIR

• Low Failure in Time ( FIT)

Rate^[1]

Note:

1. For more information see the

Surface Mount PIN Reliability Data

Sheet.

The HSMP-386X series of general

purpose PIN diodes are designed

for two classes of applications.

The first is attenuators where

current consumption is the most

important design consideration.

The second application for this

series of diodes is in switches

where low cost is the driving

issue for the designer.

DUAL ANODE

DUAL CATHODE

Description/Applications

The HSMP-380X and HSMP-381X

series are specifically designed for

low distortion attenuator applica-

tions. The HSMP-382X series is

optimized for switching applica-

tions where ultra-low resistance is

required. The HSMP-3880 switch-

ing diode is an ultra low distortion

device optimized for higher power

applications from 50 MHz to

attenuators, the HSMP-380X or

-381X series are recommended.

For high performance switching

applications, the HSMP-389X

series is recommended.

The HSMP-386X series Total

Capacitance (C_T) and Total

Resistance (R_T) are typical

specifications. For applications

that require guaranteed perfor-

mance, the general purpose

HSMP-383X series is recom-

mended. For low distortion

A SPICE model is not available

for PIN diodes as SPICE does not

provide for a key PIN diode

1.5 GHz. The HSMP-389X series is

optimized for switching applica-

tions where low resistance at low

current and low capacitance are

characteristic, carrier lifetime.

Absolute Maximum Ratings^[1]T_A= 25°C

Symbol

Parameter

Units Absolute Maximum

I_f

P_t

Forward Current (1 ms Pulse)

Total Device Dissipation

Peak Inverse Voltage

Junction Temperature

Storage Temperature

Amp

mW^[2]

—

250

P_iv

T_j

Same as V

°C

150

T_STG

°C

-65 to 150

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to

this device.

2. CW Power Dissipation at T_LEAD= 25°C. Derate to zero at maximum rated temperature.

PIN Attenuator Diodes

Electrical Specifications T_A= 25°C ( Each Diode)

Nearest

Equivalent Minimum

Axial Lead Breakdown

Maximum

Series

Maximum

Total

Minimum Maximum

High Low

Part

Package

Code^[1]Code Configuration

Number Marking Lead

HSMP-

Part No.

5082-

Voltage

V_BR( V)

Resistance Capacitance Resistance Resistance

R_S(Ω)

C_T( pF)

R_H(Ω)

R_L( Ω)

3800

3802

3804

Single

Series

3080

100

2.0

0.37

1000

Common Cathode

3810

3812

3813

3814

Single

3081

100

3.0

0.35

1500

Series

Common Anode

Common Cathode

Test Conditions

V_R= V_BR

Measure

I_F= 100 mA

f = 100 MHz

V_R= 50 V

f = 1 MHz

I_F= 0.01 mA I_F= 20 mA

f = 100 MHz f= 100 MHz

I_R≤ 10 µA

PIN Switching Diodes

Electrical Specifications T_A= 25°C

Nearest

Maximum

Equivalent

Minimum

Maximum

Shunt Mode

Part

Package

Code^[1]Code Configuration

Axial Lead Breakdown

Series

Resistance

R_S( Ω)

Total

Capacitance

C_T( pF)

Harmonic

Distortion

Hmd ( dBc)

Number Marking Lead

HSMP-

Part No.

Voltage

5082-

V_BR( V)

3820

3822

3823

3824

Single

3188

0.6*

0.8*

—

Series

Common Anode

Common Cathode

3880

Single

—

100

6.5

2.5

0.40

–55

—

3890

3892

3893

3894

3895

Single

Series

0.30**

Common Anode

Common Cathode

Unconnected Pair

Test Conditions

V_R= V_BR

Measure

I_R≤ 10 µA

I_F= 5 mA

f = 100 MHz

I_F= 10 mA*

V_R= 50 V

f = 1 MHz

V_R= 20 V*

V_R= 5 V**

2 f_o,Z_o= 50 W

f_o= 400 MHz

P_in= +30 dBm

0 V bias

Note:

1. Package marking code is white.

PIN General Purpose Diodes, Electrical Specifications T_A= 25°C

Nearest

Equivalent

Axial Lead

Part No.

5082-

Minimum

Breakdown

Voltage

Maximum

Series

Resistance

R_S( Ω)

Maximum

Total

Capacitance

C_T( pF)

Part

Package

Number Marking

HSMP-

Lead

Code

Code^[1]

Configuration

Single

Series

Common Anode

Common Cathode

V_BR(V)

3830

3832

3833

3834

3077

200

1.5

0.3

Test Conditions

V = V_BR

Measure

I_F= 100 mA

f = 100 MHz

V = 50 V

f = 1 MHz

I_R≤ 10 mA

High Frequency ( Low Inductance, 500 MHz – 3 GHz) PIN Diodes, Electrical Specifications T_A= 25°C

Minimum

Break-

down

Maximum

Series

Resis-

Typical

Total

Capaci-

Maximum

Total

Capaci-

Typical

Total

Induc-

Part

Package

Number Marking Lead

Config-

uration

Voltage

tance

R_S( Ω)

tance

C_T( pF)

tance

C_T( pF)

tance

L_T( nH)

Appli-

cation

HSMP-

Code

V_BR( V)

4810

Dual

100

3.0

0.35

0.4

1.0

Attenu-

ator

Cathode

Dual Anode

4820

4890

0.6*

0.75*

0.33

1.0

1.0*

1.0

Limiter

Switch

100

2.5**

0.375

V_R= V_BR

Measure

I_F= 100 mA

I_F= 10 mA*

I_F= 5 mA**

V_R= 50 V

f = 1 MHz

V_R= 50 V

f = 1 MHz

f = 500 MHz –

3 GHz

V_R= 20 V*

I_R≤ 10 µA

V = 20 V*

V = 0 V

PIN General Purpose Diodes, Typical Specifications T_A= 25°C

Code

Minimum

Breakdown

Voltage V_BR( V)

Typical Series

Resistance

R_S( Ω)

Typical Total

Capacitance

C_T( pF)

Part Number

HSMP-

Marking

Lead

Code

Code^[1]

Configuration

3860

3862

3863

3864

Single

Series

Common Anode

Common Cathode

3.0/1.5*

0.20

Test Conditions

V_R= V_BR

Measure

I_R≤ 10 µA

I_F= 10 mA

f = 100 MHz

*I_F= 100 mA

V = 50 V

f = 1 MHz

Typical Parameters at T_A= 25°C

Part Number

HSMP-

Series Resistance

Carrier Lifetime

Reverse Recovery Time

T_rr(ns)

Total Capacitance

C_T( pF)

R_S( Ω)

τ ( ns)

380X

381X

382X

383X

388X

389X

1.5

3.8

1800

1500

70*

500

2500

200*

500

300

550

–

0.32 @ 50 V

0.27 @ 50 V

0.60 @ 20 V

0.20 @ 50 V

0.30 @ 50 V

0.20 @ 5 V

Test Conditions

I_F= 1 mA

f = 100 MHz

I_F= 10 mA*

I_F= 50 mA

I_R= 250 mA

I_F= 10 mA*

I_R= 6 mA*

V = 10 V

I_F= 20 mA

90% Recovery

Note:

1. Package marking code is white.

Typical Parameters at T_A= 25°C ( unless otherwise noted) , Single Diode

0.45

0.40

0.35

0.30

0.25

0.20

0.35

10000

1000

100

HSMP-381x, /HSMP-4810

HSMP-383x, -386x

0.30

1 MHz

0.25

0.20

100 MHz

1 GHz

30 MHz

HSMP-382x, -4820

frequency>100 MHz

0.1

0.01

0.15

10 12 14 16 18 20

0.1

100

– FORWARD BIAS CURRENT (mA)

REVERSE VOLTAGE (V)

Figure 3. Resistance at 25°C vs.

Forward Bias Current.

Figure 1. RF Capacitance vs. Reverse

Bias, HSMP-3810 Series.

Figure 2. RF Capacitance vs. Reverse

Bias, HSMP-3830 Series.

1.4

1.2

10000

3000

T_A= +85°C

1000

_A= +25°C

_A= –55°C

_A= +25°C

_A= –55°C

1000

100

0.8

0.6

0.4

0.2

HSMP-382X

HSMP-3880

100

HSMP-3800

HSMP-381X

HSMP-3830

HSMP-3890

0.01

0.1

100

0.1

100

– FORWARD BIAS CURRENT (mA)

– REVERSE VOLTAGE (V)

– FORWARD BIAS CURRENT (mA)

Figure 5. RF Resistance vs. Forward

Bias Current for HSMP-3810/

HSMP-4810.

Figure 6. Capacitance vs. Reverse

Voltage.

Figure 4. RF Resistance vs. Forward

Bias Current for HSMP-3800.

120

100

Diode Mounted as a

HSMP-382X

Series Attenuator in a

50 Ohm Microstrip and

Tested at 123 MHz

Series Attenuator

in a 50 Ohm Microstrip

and Tested at 123 MHz

110

100

115

V_R= 2V

110

_R= 5V

105

HSMP-3830

HSMP-3880

100

V_R= 10V

HSMP-3810

HSMP-3820

HSMP-3830

HSMP-3890

1000

FORWARD CURRENT (mA)

100

DIODE RF RESISTANCE (OHMS)

– FORWARD BIAS CURRENT (mA)

Figure 7. 2nd Harmonic Input

Intercept Point vs. Diode RF

Resistance for Attenuator Diodes.

Figure 8. 2nd Harmonic Input

Intercept Point vs. Forward Bias

Current for Switch Diodes.

Figure 9. Reverse Recovery Time vs.

Forward Current for Various Reverse

Voltages. HSMP-3820 Series.

Typical Parameters (continued)

1000

900

800

700

600

500

200

160

120

1000

HSMP-3830

= 5V

V = –2V

= 10V

= 5V

400

300

= 10V

= 20V

100

= –5V

= 20V

200

= –10V

100

FORWARD CURRENT (mA)

Figure 11. Typical Reverse Recovery

Time vs. Reverse Voltage. HSMP-3880

Series.

Figure 12. Typical Reverse Recovery

Time vs. Reverse Voltage. HSMP-3890

Series.

Figure 10. Reverse Recovery Time vs.

Forward Current for Various Reverse

Voltage. HSMP-3830 Series.

100

HSMP-3810

HSMP-4810

HSMP-3800

HSMP-382X

HSMP-482X

0.1

25°C

–50°C

125°C

0.2 0.4

–50°C

125°C 25°C

0.4 0.6

25°C

125°C

0.2 0.4

0.01

0.6

0.8

1.0

1.2

0.6

0.8

1.0 1.2

0.2

0.8

1.0 1.2

– FORWARD VOLTAGE (mA)

Figure 13. Forward Current vs.

Forward Voltage. HSMP-3800 Series.

Figure 14. Forward Current vs.

Forward Voltage. HSMP-3810 and

HSMP-4810 Series.

Figure 15. Forward Current vs.

Forward Voltage. HSMP-3820 and

HSMP-4820 Series.

100

HSMP-3830

0.1

125°C 25°C

–55°C

125°C 25°C –50°C

–55°C

0.6 0.8

V – FORWARD VOLTAGE (mA)

125°C 25°C

0.01

0.2

0.4

0.6

0.8

1.0 1.2

0.2

0.4

0.6

0.8

1.0 1.2

0.2 0.4

1.0 1.2

– FORWARD VOLTAGE (mA)

– FORWARD CURRENT (mA)

Figure 16. Forward Current vs.

Forward Voltage. HSMP-3830 Series.

Figure 17. Forward Current vs.

Forward Voltage. HSMP-3880 Series.

Figure 18. Forward Current vs.

Forward Voltage. HSMP-3890 and

HSMP-4890 Series.

Typical Parameters (continued)

1000

100

0.5

0.4

0.3

0.2

0.1

T_A= +125°C

T_A= +25°C

T_A= +85°C

T_A= +25°C

T_A= –55°C

_A= –50°C

100

0.1

0.01

0.1

100

0.2

0.4

0.6

0.8

1.0 1.2

V – REVERSE VOLTAGE (V)

BIAS CURRENT (mA)

– FORWARD VOLTAGE (V)

Figure 19. Typical RF Resistance vs.

Forward Bias Current for HSMP-3860.

Figure 20. Forward Current vs.

Forward Voltage for HSMP-3860.

Figure 21. Typical Capacitance vs.

Reverse Bias for HSMP-3860.

Equivalent Circuit Model

HSMS-3860

C_p

0.08 pF

1.5 Ω

2.0 nH

C_j

R_T= 1.5 + R_j

C_T= C_P+ C_j

0.12 pF*

* Measured at -20 V

R_j

Ω

I^0.9

I = Forward Bias Current in mA

Typical Applications for Multiple Diode Products

RF COMMON

RF 2

RF 1

RF 2

BIAS 1

BIAS 2

BIAS

Figure 22. Simple SPDT Switch, Using Only Positive Current.

Figure 23. High Isolation SPDT Switch, Dual Bias.

RF COMMON

BIAS

RF 1

RF 2

RF 1

BIAS

Figure 24. Switch Using Both Positive and Negative Bias

Current.

Figure 25. Very High Isolation SPDT Switch, Dual Bias.

Typical Applications for Multiple Diode Products (continued)

VARIABLE BIAS

RF IN/OUT

INPUT

FIXED

BIAS

VOLTAGE

Figure 26. Four Diode π Attenuator.

BIAS

Figure 27. High Isolation SPST Switch

( Repeat Cells as Required) .

Figure 28. Power Limiter Using HSMP-3822

Diode Pair.

Typical Applications for HSMP-48XX Low Inductance Series

0.5nH

0.3 pF*

0.5 nH

HSMP-4810

HSMP-4820 & HSMP-4890

*0.8pF TYPICAL FOR HSMP-3820

Figure 29. Internal Connections.

Figure 30. Equivalent Circuit.

0.3 pF*

0.25 nH

0.5 nH

*0.8 pF TYPICAL FOR HSMP-3820

Figure 32. Equivalent Circuit.

Figure 31. Circuit Layout.

Microstrip Series

Connection for HSMP-48XX Series

In order to take full advantage

of the low inductance of the

HSMP-48XX series when using

them in series application,

both lead 1 and lead 2 should be

connected together, as shown above.

1.5 nH

50 OHM MICROSTRIP LINES

0.3 pF*

0.3 nH

PAD CONNECTED TO

GROUND BY TWO

VIA HOLES

*0.8 pF TYPICAL FOR HSMP-4820

Figure 33. Circuit Layout.

Figure 34. Equivalent Circuit.

Microstrip Shunt

Connections for

HSMP-48XX Series

In the diagram above, the

center conductor of the

microstrip line is interrupted

and leads 1 and 2 of the

increasing the maximum

HSMP-38XX series diode are

placed across the resulting gap.

This forces the 0.5 nH lead

inductance of leads 1 and 2 to

appear as part of a low pass

filter, reducing the shunt

available attenuation. The 0.3 nH

of shunt inductance external

to the diode is created by the via

holes, and is a good estimate for

0.032" thick material.

parasitic inductance and

Co-Planar Waveguide

Groundplane

0.3 pF*

0.75 nH

Center Conductor

Groundplane

*0.8 pF TYPICAL FOR HSMP-4820

Figure 35. Circuit Layout.

Figure 36. Equivalent Circuit.

Co-Planar Waveguide

Shunt Connection for

HSMP-48XX Series

Co-Planar waveguide, with

ground on the top side of the

printed circuit board, is shown

in the diagram above. Since it

eliminates the need for via holes

to ground, it offers lower shunt

parasitic inductance and higher

maximum attenuation when

compared to a microstrip circuit.

Package Dimensions

PC Board Footprints

Outline 23 ( SOT-23)

SOT-23

1.02 (0.040)

0.89 (0.035)

0.54 (0.021)

0.37 (0.015)

DATE CODE (X)

0.037

0.95

0.037

0.95

PACKAGE

MARKING

CODE (XX)

1.40 (0.055)

1.20 (0.047)

2.65 (0.104)

2.10 (0.083)

X X X

0.079

2.0

0.50 (0.024)

0.45 (0.018)

2.04 (0.080)

1.78 (0.070)

TOP VIEW

0.035

0.9

0.152 (0.006)

0.066 (0.003)

3.06 (0.120)

2.80 (0.110)

0.031

0.8

1.02 (0.041)

0.85 (0.033)

inches

DIMENSIONS IN

0.69 (0.027)

0.45 (0.018)

0.10 (0.004)

0.013 (0.0005)

SIDE VIEW

END VIEW

DIMENSIONS ARE IN MILLIMETERS (INCHES)

SOT-143

Outline 143 ( SOT-143)

0.92 (0.036)

0.78 (0.031)

DATE CODE (X)

0.112

2.85

PACKAGE

MARKING

CODE (XX)

0.079

1.40 (0.055)

1.20 (0.047)

2.65 (0.104)

2.10 (0.083)

X X X

0.033

0.85

0.60 (0.024)

0.45 (0.018)

0.108

2.75

0.075

1.9

0.041

1.05

0.54 (0.021)

0.37 (0.015)

0.071

1.8

2.04 (0.080)

1.78 (0.070)

0.033

0.85

3.06 (0.120)

2.80 (0.110)

0.15 (0.006)

0.09 (0.003)

0.047 0.031 0.033

1.04 (0.041)

0.85 (0.033)

1.2

0.8

0.85

inches

DIMENSIONS IN

0.69 (0.027)

0.45 (0.018)

0.10 (0.004)

0.013 (0.0005)

DIMENSIONS ARE IN MILLIMETERS (INCHES)

Package Characteristics

Lead Material ...................................................................................... Alloy 42

Lead Finish ............................................................................ Tin-Lead 85-15%

Maximum Soldering Temperature .............................. 260°C for 5 seconds

Minimum Lead Strength .......................................................... 2 pounds pull

Typical Package Inductance .................................................................. 2 nH

Typical Package Capacitance ..............................0.08 pF (opposite leads)

Profile Option Descriptions

-BLK = Bulk

-TR1 = 3K pc. Tape and Reel, Device Orientation; See Figures 37 and 38

-TR2 = 10K pc. Tape and Reel, Device Orientation; See Figures 37 and 38

Tape and Reeling conforms to Electronic Industries RS-481, “Taping of

Surface Mounted Components for Automated Placement.”

Ordering Information

Specify part number followed by option under. For example:

SMP

38XX

- XXX

Bulk or Tape and Reel Option

Part Number

Surface Mount PIN Diode

Hewlett-Packard

REEL

CARRIER

TAPE

USER

FEED

DIRECTION

COVER TAPE

TOP VIEW

4 mm

END VIEW

8 mm

www.hp.com/go/rf

For technical assistance or the location of

your nearest Hewlett-Packard sales

office, distributor or representative call:

Figure 37. Options -TR1, -TR2 for SOT-23 Packages.

Americas/Canada: 1-800-235-0312 or

408-654-8675

TOP VIEW

4 mm

END VIEW

Far East/Australasia: Call your local HP

sales office.

Japan: (81 3) 3335-8152

Europe: Call your local HP sales office.

8 mm

Data subject to change.

Obsoletes 5968-3435E

5968-5439E (6/99)

Figure 38. Options -TR1, -TR2 for SOT-143 Packages.

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HSMP-3834-TR1产品参数

型号:	HSMP-3834-TR1
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	BROADCOM INC
包装说明：	SOT-23, 3 PIN
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.70
风险等级：	5.25
其他特性：	LOW DISTORTION
应用：	ATTENUATOR; SWITCHING
最小击穿电压：	200 V
配置：	COMMON CATHODE, 2 ELEMENTS
最大二极管电容：	0.3 pF
标称二极管电容：	0.3 pF
二极管元件材料：	SILICON
最大二极管正向电阻：	1.5 Ω
二极管电阻测试电流：	100 mA
二极管电阻测试频率：	100 MHz
二极管类型：	PIN DIODE
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e0
少数载流子标称寿命：	0.5 µs
元件数量：	2
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
最大功率耗散：	0.25 W
认证状态：	Not Qualified
反向测试电压：	50 V
子类别：	PIN Diodes
表面贴装：	YES
技术：	POSITIVE-INTRINSIC-NEGATIVE
端子面层：	TIN LEAD
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED

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