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产品型号HSMS-270C-TR1G的概述

HSMS-270C-TR1G芯片概述 HSMS-270C-TR1G是一款由光电半导体公司(如Avago Technologies,现为Broadcom)制造的高性能高速散热光电二极管。此静态光电二极管广泛应用于多个领域,如光通信、光标感应、条形码阅读器、光纤通信以及医疗设备等。其规格和特性使得HSMS-270C-TR1G能够在低电压和高频率条件下有效工作。 该芯片特别适用于需要高灵敏度和快速响应的应用,提供更快的数据传输率和更低的噪声水平。由于其可靠性和优异的电气性能,HSMS-270C-TR1G在客户设计中逐渐成为首选组件。 HSMS-270C-TR1G详细参数 HSMS-270C-TR1G具有以下主要参数: 1. 外观:小型封装,通常为SOT-23类型的表面贴装封装。 2. 波长范围:灵敏光谱范围大致在400nm到1100nm之间,适用于近紫外光到近红外光的应用。 3. 光敏面积:...

产品型号HSMS-270C-TR1G的Datasheet PDF文件预览

HSMS-2700, 2702, 270B, 270C, 270P  
High Performance Schottky Diode  
for Transient Suppression  
Data Sheet  
Description  
Features  
Ultra-low Series Resistance for Higher Current  
The HSMS-2700 series of Schottky diodes, commonly  
referred to as clipping/clamping diodes, are optimal for  
circuit and waveshape preservation applications with  
high speed switching. Ultra-low series resistance, RS,  
makes them ideal for protecting sensitive circuit elements  
against higher current transients carried on data lines.  
With picosecond switching, the HSMS-270x can respond  
to noise spikes with rise times as fast as 1 ns. Low ca-  
pacitance minimizes waveshape loss that causes signal  
degradation.  
Handling  
Picosecond Switching  
Low Capacitance  
Lead-free  
Applications  
RF and computer designs that require circuit protection,  
high-speed switching, and voltage clamping.  
HSMS-270x DC Electrical Specifications, TA = +25°C[1]  
Maximum Minimum  
Typical  
Series  
Maximum  
Eff. Carrier  
Part  
Package  
Forward  
Voltage  
VF (mV)  
Breakdown Typical  
Voltage  
VBR (V)  
Number Marking Lead  
Capacitance Resistance Lifetime  
HSMS-  
Code[2]  
Code Configuration Package  
CT (pF)  
RS (Ω)  
τ (ps)  
-2700  
J0  
0
B
2
C
Single  
SOT-23  
SOT-323  
(3-lead SC-70)  
-270B  
-2702  
-270C  
SOT-23  
550[3]  
15[4]  
6.7[5]  
0.65  
100[6]  
SOT-323  
(3-lead SC-70)  
J2  
JP  
Series  
SOT-363  
(6-lead SC-70)  
-270P  
Notes:  
P
Bridge Quad  
1. TA = +25°C, where TA is defined to be the temperature at the package pins where contact is made to the circuit board.  
2. Package marking code is laser marked.  
3. IF = 100 mA; 100% tested  
4. IR = 100 μA; 100% tested  
5. VF = 0; f =1 MHz  
6. Measured with Karkauer method at 20 mA; guaranteed by design.  
Package Lead Code Identification (Top View)  
SINGLE  
3
SERIES  
3
BRIDGE QUAD  
6
5
4
0, B  
2, C  
1
2
1
2
1
2
3
Absolute Maximum Ratings, TA= 25ºC  
Absolute Maximum[1]  
Symbol  
IF  
Parameter  
Unit  
mA  
A
HSMS-2700/-2702  
HSMS-270B/270C/270P  
DC Forward Current  
350  
750  
IF-peak  
PT  
Peak Surge Current (1μs pulse)  
Total Power Dissipation  
Peak Inverse Voltage  
1.0  
1.0  
mW  
V
250  
825  
PINV  
TJ  
15  
15  
Junction Temperature  
Storage Temperature  
Thermal Resistance, junction to lead  
°C  
150  
150  
TSTG  
θJC  
°C  
-65 to 150  
500  
-65 to 150  
150  
°C/W  
Note:  
1. Operation in excess of any one of these conditions may result in permanent damage to the device.  
Linear and Non-linear SPICE Model  
SPICE Parameters  
0.08 pF  
Parameter  
Unit  
V
Value  
25  
BV  
CJO  
EG  
IBV  
IS  
pF  
eV  
A
6.7  
0.55  
10E-4  
1.4E-7  
1.04  
0.65  
0.6  
2 nH  
R
S
A
SPICE model  
N
RS  
PB  
PT  
M
Ω
V
2
0.5  
2
Typical Performance  
300  
100  
500  
100  
160  
140  
120  
100  
80  
Max. safe junction temp.  
TA = +75 C  
TA = +25 C  
TA = –25 C  
10  
1
10  
1
60  
40  
0.1  
0.1  
TA = +75 C  
TA = +25 C  
TA = –25 C  
TA = +75 C  
TA = +25 C  
TA = –25 C  
20  
0
0.01  
0.01  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
0
50  
100 150  
300 350  
200 250  
V
– FORWARD VOLTAGE (V)  
V
– FORWARD VOLTAGE (V)  
I – FORWARD CURRENT (mA)  
F
F
F
Figure 1. Forward Current vs. Forward Voltage at  
Temperature for HSMS-2700 and HSMS-2702.  
Figure 2. Forward Current vs. Forward Voltage at  
Temperature for HSMS-270B and HSMS-270C.  
Figure 3. Junction Temperature vs. Forward Current  
as a Function of Heat Sink Temperature for the  
HSMS-2700 and HSMS-2702.  
Note: Data is calculated from SPICE parameters.  
160  
7
6
Max. safe junction temp.  
TA = +75 C  
140  
TA = +25 C  
120  
100  
80  
TA = –25 C  
5
4
3
60  
40  
2
1
20  
0
0
150  
300  
450  
600  
750  
0
5
10  
V – REVERSE VOLTAGE (V)  
F
15  
20  
I
– FORWARD CURRENT (mA)  
F
Figure 4. Junction Temperature vs. Current as a  
Figure 5. Total Capacitance vs. Reverse Voltage.  
Function of Heat Sink Temperature for HSMS-270B  
and HSMS-270C.  
Note: Data is calculated from SPICE parameters.  
3
Package Dimensions  
Device Orientation  
For Outlines SOT-23/323  
Outline SOT-23  
REEL  
e2  
e1  
CARRIER  
TAPE  
E1  
E
XXX  
USER  
FEED  
DIRECTION  
e
COVER TAPE  
L
B
D
C
TOP VIEW  
END VIE W  
4 mm  
DIMENSIONS (mm)  
SYMBOL  
MIN.  
0.79  
0.000  
0.30  
0.08  
2.73  
1.15  
0.89  
1.78  
0.45  
2.10  
0.45  
MAX.  
1.20  
0.100  
0.54  
0.20  
3.13  
1.50  
1.02  
2.04  
0.60  
2.70  
0.69  
A
A1  
B
C
D
E1  
e
e1  
e2  
E
A
8 mm  
ABC  
ABC  
ABC  
ABC  
A1  
Note: "AB" represents package marking code.  
"C" represents date code.  
Notes:  
XXX-package marking  
Drawings are not to scale  
L
Recommended PCB Pad Layout  
For Avago’s SOT-23 Products  
Tape Dimensions and Product Orientation  
For Outline SOT-23  
P
P
D
2
0.039  
1
E
F
P
0.039  
1
0
0.079  
2.0  
W
D
1
0.035  
0.9  
t1  
Ko  
13.5° MAX  
8° MAX  
9° MAX  
0.031  
0.8  
B
inches  
mm  
A
0
0
Dimensions in  
DESCRIPTION  
SYMBOL  
SIZE (mm)  
SIZE (INCHES)  
CAVITY  
LENGTH  
WIDTH  
DEPTH  
PITCH  
A
B
K
P
3.15 0.10  
2.77 0.10  
1.22 0.10  
4.00 0.10  
1.00 + 0.05  
0.124 0.004  
0.109 0.004  
0.048 0.004  
0.157 0.004  
0.039 0.002  
0
0
0
BOTTOM HOLE DIAMETER  
D
1
PERFORATION  
CARRIER TAPE  
DIAMETER  
PITCH  
POSITION  
D
1.50 + 0.10  
4.00 0.10  
1.75 0.10  
0.059 + 0.004  
0.157 0.004  
0.069 0.004  
P
E
0
WIDTH  
W
8.00+0.300.10 0.315+0.0120.004  
THICKNESS  
t1  
0.229 0.013  
0.009 0.0005  
DISTANCE  
BETWEEN  
CAVITY TO PERFORATION  
(WIDTH DIRECTION)  
F
3.50 0.05  
0.138 0.002  
CENTERLINE  
CAVITY TO PERFORATION  
(LENGTH DIRECTION)  
P
2.00 0.05  
0.079 0.002  
2
4
Package Dimensions  
Recommended PCB Pad Layout  
For Avago’s SC70 3L/SOT-323 Products  
Outline SOT-323 (SC-70 3 Lead)  
e1  
0.026  
E1  
E
XXX  
0.079  
e
L
0.039  
B
C
0.022  
D
DIMENSIONS (mm)  
SYMBOL  
MIN.  
0.80  
0.00  
0.15  
0.08  
1.80  
1.10  
MAX.  
1.00  
0.10  
0.40  
0.25  
2.25  
1.40  
A
A1  
B
Dimensions in inches  
A
C
D
A1  
E1  
e
0.65 typical  
1.30 typical  
e1  
E
Notes:  
1.80  
0.26  
2.40  
0.46  
XXX-package marking  
L
Drawings are not to scale  
Outline SOT-363 (SC-70 6 Lead)  
DIMENSIONS (mm)  
SYMBOL  
MIN.  
1.15  
1.80  
1.80  
0.80  
0.80  
0.00  
MAX.  
1.35  
2.25  
2.40  
1.10  
1.00  
0.10  
HE  
E
E
D
HE  
A
A2  
A1  
e
e
0.650 BCS  
b
0.15  
0.08  
0.10  
0.30  
0.25  
0.46  
c
D
L
c
A1  
A2  
A
b
L
5
Tape Dimensions and Product Orientation  
For Outline SOT-323/363 (SC-70 3 and 6 Lead)  
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)  
T (COVER TAPE THICKNESS)  
t
1
K
8° MAX.  
8° MAX.  
0
A
B
0
0
DESCRIPTION  
SYMBOL  
SIZE (mm)  
SIZE (INCHES)  
CAVITY  
LENGTH  
WIDTH  
DEPTH  
PITCH  
A
B
K
P
2.40 0.10  
2.40 0.10  
1.20 0.10  
4.00 0.10  
1.00 + 0.25  
0.094 0.004  
0.094 0.004  
0.047 0.004  
0.157 0.004  
0.039 + 0.010  
0
0
0
BOTTOM HOLE DIAMETER  
D
1
PERFORATION  
DIAMETER  
PITCH  
POSITION  
D
1.55 0.05  
4.00 0.10  
1.75 0.10  
0.061 0.002  
0.157 0.004  
0.069 0.004  
P
E
0
CARRIER TAPE  
COVER TAPE  
DISTANCE  
WIDTH  
THICKNESS  
W
8.00 0.30  
0.254 0.02  
0.315 0.012  
0.0100 0.0008  
t
1
WIDTH  
TAPE THICKNESS  
C
5.4 0.10  
0.062 0.001  
0.205 0.004  
0.0025 0.00004  
T
t
CAVITY TO PERFORATION  
(WIDTH DIRECTION)  
F
3.50 0.05  
0.138 0.002  
CAVITY TO PERFORATION  
(LENGTH DIRECTION)  
P
2.00 0.05  
0.079 0.002  
2
6
Another significant difference between Schottky and p-n  
diodes is the forward voltage drop. Schottky diodes have  
a threshold of typically 0.3 V in comparison to that of 0.6 V  
in p-n junction diodes. See Figure 6.  
Applications Information  
Schottky Diode Fundamentals  
The HSMS-270x series of clipping/clamping diodes  
are Schottky devices. A Schottky device is a rectifying,  
metal-semiconductor contact formed between a metal  
and an n-doped or a p-doped semiconductor. When a  
metal-semiconductor junction is formed, free electrons  
flow across the junction from the semiconductor and fill  
the free-energy states in the metal. This flow of electrons  
creates a depletion or potential across the junction. The  
difference in energy levels between semiconductor and  
metal is called a Schottky barrier.  
Through the careful manipulation of the diameter of the  
Schottky contact and the choice of metal deposited on  
the n-doped silicon, the important characteristics of the  
diode (junction capacitance, CJ; parasitic series resistance,  
RS; breakdown voltage, VBR; and forward voltage, VF,)  
can be optimized for specific applications. The HSMS-  
270x series and HBAT-540x series of diodes are a case in  
point.  
Both diodes have similar barrier heights; and this is  
indicated by corresponding values of saturation current,  
IS. Yet, different contact diameters and epitaxial-layer  
thickness result in very different values of CJ and RS. This  
is seen by comparing their SPICE parameters in Table 1.  
P-doped, Schottky-barrier diodes excel at applications  
requiring ultra low turn-on voltage (such as zero-biased  
RF detectors). But their very low, breakdown-voltage  
and high series-resistance make them unsuitable for  
the clipping and clamping applications involving high  
forward currents and high reverse voltages. Therefore,  
this discussion will focus entirely on n-doped Schottky  
diodes.  
Table 1. HSMS-270x and HBAT-540x SPICE Parameters.  
Parameter  
HSMS- 270x  
25 V  
HBAT- 540x  
40 V  
BV  
CJ0  
EG  
IBV  
IS  
Under a forward bias (metal connected to positive in an  
n-doped Schottky), or forward voltage, VF, there are many  
electrons with enough thermal energy to cross the barrier  
potential into the metal. Once the applied bias exceeds  
the built-in potential of the junction, the forward current,  
IF, will increase rapidly as VF increases.  
6.7 pF  
0.55 eV  
10E-4 A  
1.4E-7 A  
1.04  
3.0 pF  
0.55 eV  
10E-4 A  
1.0E-7 A  
1.0  
N
RS  
PB  
PT  
M
0.65 Ω  
0.6 V  
2.4 Ω  
0.6 V  
When the Schottky diode is reverse biased, the potential  
barrier for electrons becomes large; hence, there is a  
small probability that an electron will have sufficient  
thermal energy to cross the junction. The reverse leakage  
current will be in the nanoampere to microampere range,  
depending upon the diode type, the reverse voltage, and  
the temperature.  
2
2
0.5  
0.5  
At low values of IF ≤ 1 mA, the forward voltages of the  
two diodes are nearly identical. However, as current rises  
above 10 mA, the lower series resistance of the HSMS-  
270x allows for a much lower forward voltage. This gives  
the HSMS-270x a much higher current handling capabil-  
ity. The trade-off is a higher value of junction capacitance.  
The forward voltage and current plots illustrate the  
differences in these two Schottky diodes, as shown in  
Figure 7.  
In contrast to a conventional p-n junction, current in  
the Schottky diode is carried only by majority carriers  
(electrons). Because no minority-carrier (hole) charge  
storage effects are present, Schottky diodes have carrier  
lifetimes of less than 100 ps. This extremely fast switching  
time makes the Schottky diode an ideal rectifier at fre-  
quencies of 50 GHz and higher.  
300  
HSMS-270x  
100  
P
N
METAL N  
HBAT-540x  
10  
CAPACITANCE  
CURRENT  
CURRENT  
0.3V  
CAPACITANCE  
1
0.6V  
.1  
+
+
BIAS VOLTAGE  
BIAS VOLTAGE  
PN JUNCTION  
SCHOTTKY JUNCTION  
.01  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
Figure 6.  
V
– FORWARD VOLTAGE (V)  
F
Figure 7. Forward Current vs. Forward Voltage at 25°C.  
7
Because the automatic, pick-and-place equipment used tained at a low limit even at high values of current.  
to assemble these products selects dice from adjacent  
Maximum reliability is obtained in a Schottky diode when  
sites on the wafer, the two diodes which go into the  
the steady state junction temperature is maintained at or  
HSMS-2702 or HSMS-270C (series pair) are closely  
below 150°C, although brief excursions to higher junction  
matchedwithout the added expense of testing and  
temperatures can be tolerated with no significant impact  
binning.  
upon mean-time-to-failure, MTTF. In order to compute  
the junction temperature, Equations (1) and (3) below  
must be simultaneously solved.  
Current Handling in Clipping/Clamping Circuits  
The purpose of a clipping/clamping diode is to handle  
high currents, protecting delicate circuits downstream  
of the diode. Current handling capacity is determined  
by two sets of characteristics, those of the chip or device  
itself and those of the package into which it is mounted.  
11600 (VF I RS)  
F
nT  
J
(1)  
IF = IS  
e
–1  
2
n
1
TJ  
1
298  
noisy data-spikes  
4060  
TJ  
298  
(2)  
(3)  
current  
Vs  
IS = I0  
e
limiting  
TJ = VFIFJC + TA  
long cross-site cable  
pull-down  
where:  
0V  
(or pull-up)  
IF = forward current  
voltage limited to  
Vs + Vd  
0V – Vd  
IS = saturation current  
VF = forward voltage  
RS = series resistance  
TJ = junction temperature  
Figure 8. Two Schottky Diodes Are Used for Clipping/Clamping in a Circuit.  
Consider the circuit shown in Figure 8, in which two  
Schottky diodes are used to protect a circuit from noise  
spikes on a stream of digital data. The ability of the diodes  
to limit the voltage spikes is related to their ability to sink  
the associated current spikes. The importance of current  
handling capacity is shown in Figure 9, where the forward  
voltage generated by a forward current is compared in  
two diodes.  
IO = saturation current at 25°C  
n = diode ideality factor  
θJC = thermal resistance from junction to case (diode  
lead)  
= θpackage + θchip  
6
5
4
TA = ambient (diode lead) temperature  
Equation (1) describes the forward V-I curve of a Schottky  
diode. Equation (2) provides the value for the diode’s satu-  
ration current, which value is plugged into (1). Equation  
(3) gives the value of junction temperature as a function  
of power dissipated in the diode and ambient (lead)  
temperature.  
R
= 7.7  
s
3
2
R
= 1.0  
0.3  
s
1
0
The key factors in these equations are: RS, the series resis-  
tance of the diode where heat is generated under high  
current conditions; θchip, the chip thermal resistance of  
the Schottky die; and θpackage, or the package thermal  
resistance.  
0
0.1  
0.2  
0.4  
0.5  
I
– FORWARD CURRENT (mA)  
F
Figure 9. Comparison of Two Diodes.  
RS for the HSMS-270x family of diodes is typically 0.7 Ω  
and is the lowest of any Schottky diode available from  
Avago. Chip thermal resistance is typically 40°C/W; the  
thermal resistance of the iron-alloy-leadframe, SOT-23  
package is typically 460°C/W; and the thermal resistance  
of the copper-leadframe, SOT-323 package is typically  
110°C/W. The impact of package thermal resistance on  
the current handling capability of these diodes can be  
seen in Figures 3 and 4. Here the computed values of  
junction temperature vs. forward current are shown  
The first is a conventional Schottky diode of the type  
generally used in RF circuits, with an RS of 7.7 Ω. The  
second is a Schottky diode of identical characteristics,  
save the RS of 1.0 Ω. For the conventional diode, the  
relatively high value of RS causes the voltage across the  
diode’s terminals to rise as current increases. The power  
dissipated in the diode heats the junction, causing RS to  
climb, giving rise to a runaway thermal condition. In the  
second diode with low RS, such heating does not take  
place and the voltage across the diode terminals is main-  
8
for three values of ambient temperature. The SOT-323  
products, with their copper leadframes, can safely handle  
almost twice the current of the larger SOT-23 diodes.  
Note that the term “ambient temperature” refers to the  
temperature of the diode’s leads, not the air around the  
circuit board. It can be seen that the HSMS-270B and  
HSMS-270C products in the SOT-323 package will safely  
withstand a steady-state forward current of 550 mA when  
the diode’s terminals are maintained at 75°C.  
Part Number Ordering Information  
Part Number  
No. of Devices  
Container  
HSMS-2700-BLKG  
HSMS-2700-TR1G  
HSMS-2700-TR2G  
100  
3,000  
10,000  
Antistatic Bag  
7" Reel  
13" Reel  
HSMS-2702-BLKG  
HSMS-2702-TR1G  
HSMS-2702-TR2G  
100  
3,000  
10,000  
Antistatic Bag  
7" Reel  
13" Reel  
HSMS-270B-BLKG  
HSMS-270B-TR1G  
HSMS-270B-TR2G  
100  
3,000  
10,000  
Antistatic Bag  
7" Reel  
13" Reel  
For pulsed currents and transient current spikes of less  
than one microsecond in duration, the junction does not  
have time to reach thermal steady state. Moreover, the  
diode junction may be taken to temperatures higher than  
150°C for short time-periods without impacting device  
MTTF. Because of these factors, higher currents can be  
safely handled. The HSMS-270x family has the highest  
current handling capability of any Avago diode.  
HSMS-270C-BLKG  
HSMS-270C-TR1G  
HSMS-270C-TR2G  
100  
3,000  
10,000  
Antistatic Bag  
7" Reel  
13" Reel  
HSMS-270P-BLKG  
HSMS-270P-TR1G  
100  
3,000  
Antistatic Bag  
7" Reel  
For product information and a complete list of distributors, please go to our web site: www.avagotech.com  
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.  
Data subject to change. Copyright © 2005-2010 Avago Technologies Limited. All rights reserved. Obsoletes 5989-0473EN  
AV02-1366EN - July 7, 2010  
配单直通车
HSMS-270C-TR1G产品参数
型号:HSMS-270C-TR1G
是否Rohs认证: 符合
生命周期:Transferred
零件包装代码:SC-70
包装说明:R-PDSO-G3
针数:3
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.10.00.50
风险等级:5.3
其他特性:LOW CAPACITANCE
最小击穿电压:15 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
最大正向电压 (VF):0.55 V
JESD-30 代码:R-PDSO-G3
JESD-609代码:e3
湿度敏感等级:1
最大非重复峰值正向电流:1 A
元件数量:2
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL
最大功率耗散:0.825 W
认证状态:Not Qualified
最大重复峰值反向电压:15 V
子类别:Rectifier Diodes
表面贴装:YES
技术:SCHOTTKY
端子面层:TIN
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:20
Base Number Matches:1
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