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CMPA1D1E080F

时间:2020-3-26,阅读:36,发布企业:深圳市国宇航芯科技有限公司, 资讯类别:会员资讯
公司:
深圳市国宇航芯科技有限公司
联系人:
黄云艳
手机:
13632767652
电话:
086-0755-84829291
传真:
-0755-82286633
QQ:
956145708 和我即时交谈
地址:
龙华区民治光浩国际中心一期16F
摘要:CMPA1D1E080F

Cree’s CMPA1D1E080F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The Ku Band 80W MMIC is targeted for commercial Ku Band satellite communications applications. It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations. This Ku Band MMIC is available in a 14 lead, 0.685” x 0.945” (17.4mm x 24mm) metal/ceramic flanged package.

Features

  • 50-Ohm Matched

  • 80 W CW Typical Pout

  • 40 W Linear Power Under OQPSK

  • 28 dB Typical Small Signal Gain

  • 40 V Operation


资讯分类
会员资讯