CGH60008D 的订货周期10-12周订货13632767652黄小姐微信同号

8 W, 6.0 GHz, GaN HEMT Die

Wolfspeed’s CGH60008D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

WWFLAST的CGH6008D是氮化镓（GaN）高电子迁移率晶体管（HEMT）。与硅或砷化镓相比，氮化镓具有优越的性能，包括更高的击穿电压、更高的饱和电子漂移速度和更高的热导率。GaN HEMT与Si和GaAs晶体管相比，提供更大的功率密度和更宽的带宽。

国宇航芯最新优势型号

ADC12D1800CIUT/NOPB

XC5VSX35T-1FFG665I

XC5VLX85T-1FFG1136C

XC5VFX200T-2FFG1738C

XQV100-4CB228M

XQV300-4CB228M

AD9914BCPZ