CMPA0060002F

2-W, 20-MHz – 6000-MHz, GaN MMIC Power Amplifier

Wolfspeed’s CMPA0060002F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink.

Wolf.公司的CMPA0060002F是一种基于氮化镓（GaN）高电子迁移率晶体管（HEMT）的单片微波集成电路（MMIC）。与硅或砷化镓相比，氮化镓具有更高的击穿电压、更高的饱和电子漂移速度和更高的热导率。GaN HEMT也提供了更大的功率密度和更宽的带宽相比，Si和GaAs晶体管。该MMIC采用分布式(行波)放大器设计方法，使得能够在具有铜钨散热器的小占地面积压下封装中实现极其宽的带宽。

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