CG2H80015D 的订货周期10-12周订货13632767652黄小姐微信同号

15-W, 8.0-GHz, GaN HEMT Die

SKU: CG2H80015D

Wolfspeed’s CG2H80015D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

WWFLAST的CG2H800 15D是氮化镓（GaN）高电子迁移率晶体管（HEMT）。与硅或砷化镓相比，氮化镓具有优越的性能，包括更高的击穿电压、更高的饱和电子漂移速度和更高的热导率。GaN HEMT与Si和GaAs晶体管相比，提供更大的功率密度和更宽的带宽。

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