HMC1132PM5E北京军工IC国宇航芯黄小姐优势订货

HMC1132PM5E订货13632767652黄小姐微信同号

HMC1132PM5E 产品介绍HMC1132PM5E报价代理HMC1132PM5E咨询热线HMC1132PM5E现货

The HMC1132PM5E is a four-stage, gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) power amplifier. The device operates from 27 GHz to 32 GHz, providing 24 dB of gain and 29.5 dBm of saturated output power from a 5 V power supply.

The HMC1132PM5E exhibits excellent linearity with high output third-order intercept (IP3) of 37 dBm, and it is optimized for high capacity, point to point and point to multipoint radio systems. The amplifier configuration and high gain make the HMC1132PM5E an ideal candidate for last stage signal amplification before the antenna.

The HMC1132PM5E amplifier input/outputs (I/Os) are internally matched to 50 Ω. The device is housed in a RoHS compliant, premolded cavity, 5 mm × 5 mm LFCSP package, making the device compatible with high volume surface-mount technology (SMT) assembly equipment.

HMC1132PM5EApplication

· Point-to-point radios

· Point-to-multipoint radios

· Very small aperture terminals (VSATs) and satellite communication (SATCOM)

HMC1132PM5E优势和特点
PSAT: 29.5 dBm

· High output IP3: 37 dBm

· High gain: 24 dB (typical) at 29 GHz to 32 GHz

· DC supply: 5 V at 600 mA

· 50 Ω matched input/output

· 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2

· Military and space

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