HUF76131SK8
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
A
HUF76131SK8
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
30
30
±16
V
V
V
DSS
DGR
GS
Drain to Gate Voltage (R
= 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (Figure 2) (Notes 2, 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
10
Figure 5
Figure 6
2.5
0.02
-55 to 150
A
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
W
D
o
o
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
W/ C
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
Maximum Temperature for Soldering
C
J
STG
o
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
C
L
o
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
C
pkg
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 150 C.
J
o
Electrical Specifications T = 25 C, Unless Otherwise Specified
A
PARAMETER
SYMBOL
TEST CONDITIONS
= 250µA, V = 0V (Figure 11)
MIN
TYP
MAX UNITS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
BV
I
30
1
-
-
-
-
V
DSS
D
GS
= V , I = 250µA (Figure 10)
V
V
V
V
V
-
V
GS(TH)
GS
DS
DS
GS
DS D
I
= 25V, V
= 25V, V
= ±16V
= 0V
-
1
µA
µA
nA
Ω
DSS
GS
o
= 0V, T = 150 C
-
-
250
GS
A
Gate to Source Leakage Current
Drain to Source On Resistance
I
-
-
±100
GSS
r
I
I
I
= 10A, V
= 4.5V (Figures 9,14)
-
0.017
0.015
0.011
-
0.018
DS(ON)
D
GS
GS
GS
= 10A, V
= 10A, V
= 5V
-
0.017
Ω
D
D
= 10V
-
0.013
Ω
Turn-On Time
t
V
= 15V, I
10A, R = 1.5Ω, V
GS
= 5V,
-
115
ns
ON
DD
D
L
R
= 6.8Ω
GS
Turn-On Delay Time
Rise Time
t
-
15
61
33
36
-
-
ns
d(ON)
(Figure 15)
t
-
-
ns
r
Turn-Off Delay Time
Fall Time
t
-
-
ns
d(OFF)
t
-
-
ns
f
Turn-Off Time
t
-
105
ns
OFF
Total Gate Charge
Q
V
V
V
= 0V to 10V V
= 15V, I
10A,
= 1.0mA
g(REF)
-
39
22
1.53
4.00
9.50
1605
685
115
-
47
nC
nC
nC
nC
nC
pF
pF
pF
C/W
C/W
C/W
g(TOT)
GS
GS
GS
DD
D
R = 1.5Ω, I
(Figure 13)
L
Gate Charge at 5V
Q
= 0V to 5V
= 0V to 1V
-
26
g(5)
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Input Capacitance
Q
-
1.85
g(TH)
Q
Q
-
-
gs
gd
-
-
C
V
= 25V, V
GS
= 0V, f = 1MHz
-
-
ISS
DS
(Figure 12)
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
C
C
-
-
OSS
RSS
-
-
2
o
o
o
R
Pad Area = 0.76 in (Note 2)
-
50
θJA
2
Pad Area = 0.054 in (See TB377)
-
-
143.4
177.3
2
Pad Area = 0.0115 in (See TB377)
-
-
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.25
1.1
UNITS
V
Source to Drain Diode Voltage
V
I
I
I
I
= 10A
-
-
-
-
-
-
-
-
SD
SD
SD
SD
SD
= 2.3A
V
Reverse Recovery Time
t
= 2.3A, dI /dt = 100A/µs
SD
57
ns
rr
Reverse Recovered Charge
Q
= 2.3A, dI /dt = 100A/µs
SD
81
nC
RR
NOTES:
o
2
2. 50 C/W measured using FR-4 board with 0.76 in footprint at 10 seconds.
o
2
3. 177.3 C/W measured using FR-4 board with 0.0115 in footprint at 1000 seconds.
2