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HZ H Series

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

ADE-208-794 (Z)

Rev. 0

May 1999

Features

•

Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for

stabilized power supply, etc.

Wide spectrum from 1.9V through 38V of zener voltage provide flexible application.

Ordering Information

Type No.

Mark

Package Code

HZ H Series

Type No.

DO-35

Outline

7

B 2

2

1

Type No.

Cathode band

1. Cathode

2. Anode

HZ H Series

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Pd

Value

500

Unit

mW

°C

Power dissipation

Junction temperature

Storage temperature

Tj

175

Tstg

-55 to +175

°C

Electrical Characteristics

(Ta = 25°C)

Zener Voltage

Reverese Current

Test

Dynamic Resistance

Test

Condition

V_Z(V)*¹

Condition I_R(µA)

Condition r_d(Ω)

Type

Grade

B1

B2

B3

C1

C2

C3

A1

A2

A3

B1

B2

B3

C1

C2

C3

A1

A2

A3

B1

B2

B3

Min

1.9

2.0

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

3.6

3.7

3.8

3.9

Max

I_Z(mA)

Max

V_R(V)

Max

I_Z(mA)

HZ2 H

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

3.6

3.7

3.8

3.9

4.0

4.1

5

0.5

100

5

HZ3 H

5

0.5

100

5

HZ4 H

5

1.0

100

5

Note: 1. Tested with DC.

Rev.0, May. 1999, page 2 of 8

HZ H Series

Zener Voltage

Reverese Current

Test

Dynamic Resistance

Test

V_Z(V)*¹

Condition I_R(µA)

Condition r_d(Ω)

Condition

I_Z(mA)

5

Type

Grade

C1

C2

C3

A1

A2

A3

B1

B2

B3

C1

C2

C3

A1

A2

A3

B1

B2

B3

C1

C2

C3

A1

A2

A3

B1

B2

B3

C1

C2

C3

Min

4.0

4.1

4.2

4.3

4.4

4.5

4.6

4.7

4.8

4.9

5.0

5.1

5.2

5.3

5.4

5.5

5.6

5.7

5.8

6.0

6.1

6.3

6.4

6.6

6.7

6.9

7.0

7.2

7.3

7.5

Max

I_Z(mA)

Max

V_R(V)

Max

HZ4 H

4.2

4.3

4.4

4.5

4.6

4.7

4.8

4.9

5.0

5.1

5.2

5.3

5.5

5.6

5.7

5.8

5.9

6.0

6.1

6.3

6.4

6.6

6.7

6.9

7.0

7.2

7.3

7.6

7.7

7.9

5

1.0

100

HZ5 H

HZ6 H

HZ7 H

5

1

1.5

2.0

3.5

100

5

40

15

Note: 1. Tested with DC.

Rev.0, May. 1999, page 3 of 8

HZ H Series

Zener Voltage

Reverese Current

Test

Dynamic Resistance

Test

V_Z(V)*¹

Condition I_R(µA)

Condition r_d(Ω)

Condition

I_Z(mA)

5

Type

Grade

A1

A2

A3

B1

B2

B3

C1

C2

C3

A1

A2

A3

B1

B2

B3

C1

C2

C3

A1

A2

A3

B1

B2

B3

C1

C2

C3

1

Min

7.7

Max

I_Z(mA)

Max

V_R(V)

Max

HZ9 H

8.1

5

1

5.0

20

7.9

8.3

8.1

8.5

8.3

8.7

8.5

8.9

8.7

9.1

8.9

9.3

9.1

9.5

9.3

9.7

HZ11 H

HZ12 H

HZ15 H

9.5

9.9

5

1

7.5

25

35

40

5

9.7

10.1

10.3

10.6

10.8

11.1

11.3

11.6

11.9

12.1

12.4

12.7

12.9

13.1

13.4

13.7

14.0

14.3

14.7

15.1

15.5

9.9

10.2

10.4

10.7

10.9

11.1

11.4

11.6

11.9

12.2

12.4

12.6

12.9

13.2

13.5

13.8

14.1

14.5

14.9

9.5

11.0

2

3

Note: 1. Tested with DC.

Rev.0, May. 1999, page 4 of 8

HZ H Series

Zener Voltage

Reverese Current

Test

Dynamic Resistance

Test

V_Z(V)*¹

Condition I_R(µA)

Condition r_d(Ω)

Condition

I_Z(mA)

5

Type

Grade

Min

Max

I_Z(mA)

Max

V_R(V)

Max

HZ16 H

1

2

3

1

2

3

1

2

3

1

2

3

1

2

3

1

2

3

1

2

3

1

2

3

1

2

3

15.3

15.7

16.3

16.9

17.5

18.1

18.8

19.5

20.2

20.9

21.6

22.3

22.9

23.6

24.3

25.2

26.2

27.2

28.2

29.2

30.2

31.2

32.2

33.2

34.2

35.3

36.4

15.9

16.5

17.1

17.7

18.3

19.0

19.7

20.4

21.1

21.9

22.6

23.3

24.0

24.7

25.5

26.6

27.6

28.6

29.6

30.6

31.6

32.6

33.6

34.6

35.7

36.8

38.0

5

1

12.0

45

HZ18 H

HZ20 H

HZ22 H

HZ24 H

HZ27 H

HZ30 H

HZ33 H

HZ36 H

5

2

1

13.0

15.0

17.0

19.0

21.0

23.0

25.0

27.0

55

5

2

60

65

70

80

100

120

140

Note: 1. Tested with DC.

Note: 2. Type No. is as follows; HZ2 H B1, HZ 2 H B2, HZ36 H 3.

Rev.0, May. 1999, page 5 of 8

HZ H Series

Main Characteristic

10^-2

10^-3

10^-4

10^-5

10^-6

10^-7

10^-8

0

5

15

Zener Voltage V _Z(V)

Fig.1 Zener current Vs. Zener voltage

25

30

35

40

10

20

500

400

0.10

50

40

5mm

%/ C

0.08

2.5 mm

3 mm

0.06

0.04

0.02

0

30

Printed circuit board

×

100 180 1.6t mm

20

Quality: paper phenol

mV/ C

10

300

200

0

–10

–20

–30

–0.02

–0.04

–0.06

100

0

–40

–50

–0.08

–0.10

15 20 25 30

35 40

0

5

10

0

50

Ambient Temperature Ta ( C)

200

100

150

Zener Voltage V (V)

Z

Fig.2 Temperature Coefficient Vs. Zener voltage

Fig.3 Power Dissipation Vs. Ambient Temperature

Rev.0, May. 1999, page 6 of 8

HZ H Series

Package Dimensions

Unit: mm

26.0 Min

4.2 Max

7

B 2

1

2

Type No. (Yellow)

Cathode band (Navy blue)

1. Cathode

2. Anode

Hitachi Code

JEDECCode

EIAJCode

DO-35

Abbreviation of type name

DO-35

SC-48

0.13

Type name

without HZ.

7

Weight(g)

Zener voltage

classification

symbol equal

to B1 or B3.

B2

Expanded drawing of marking

Rev.0, May. 1999, page 7 of 8

HZ H Series

Disclaimer

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

copyright, trademark, or other intellectual property rights for information contained in this document.

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Sales Offices

Hitachi, Ltd.

Semiconductor & Integrated Circuits

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

Asia

: http://semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

: http://sicapac.hitachi-asia.com

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive Whitebrook Park

Hitachi Europe Ltd.

Electronic Components Group

Hitachi Asia Ltd.

Hitachi Tower

16 Collyer Quay #20-00

Singapore 049318

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower

San Jose,CA 95134

Lower Cookham Road

World Finance Centre,

Tel: <1> (408) 433-1990 Maidenhead

Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Tel : <65>-538-6533/538-8577

Fax : <65>-538-6933/538-3877

URL : http://www.hitachi.com.sg

Harbour City, Canton Road

Tsim Sha Tsui, Kowloon

Hong Kong

Tel : <852>-(2)-735-9218

Fax : <852>-(2)-730-0281

URL : http://semiconductor.hitachi.com.hk

Fax: <44> (1628) 585200

Hitachi Asia Ltd.

(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road

Hung-Kuo Building

Hitachi Europe GmbH

Electronic Components Group

Dornacher Straße 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Taipei (105), Taiwan

Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

Colophon 4.0

Rev.0, May. 1999, page 8 of 8

型号:	HYW-1719-X3-NNN-05
生命周期：	Contact Manufacturer
Reach Compliance Code：	unknown
风险等级：	5.38
其他特性：	N-F, I/P POWER-MAX(PEAK)=5000WATT
构造：	COAXIAL
最大输入功率 (CW)：	53.01 dBm
最大插入损耗：	0.25 dB
最大工作频率：	1990 MHz
最小工作频率：	1700 MHz
射频/微波设备类型：	90 DEGREE HYBRID COUPLER
最大电压驻波比：	1.2
Base Number Matches：	1

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