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  • 首天国际(深圳)集团有限公司

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  • 北京齐天芯科技有限公司

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产品型号HZS3C1TDX的Datasheet PDF文件预览

HZS Series  
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply  
REJ03G0184-0300Z  
(Previous: ADE-208-120B)  
Rev.3.00  
Mar.11.2004  
Features  
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized  
power supply, etc.  
Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.  
Suitable for 5mm-pitch high speed automatic insertion.  
Ordering Information  
Type No.  
Mark  
Package Code  
HZS Series  
Type No.  
MHD  
Pin Arrangement  
B
2
2
1
Type No.  
Cathode band  
1. Cathode  
2. Anode  
Rev.3.00, Mar.11.2004, page 1 of 6  
HZS Series  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Pd  
Value  
400  
Unit  
mW  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Tj  
200  
Tstg  
55 to +175  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Zener Voltage  
VZ (V)*1  
Reverse Current  
Dynamic Resistance  
Test  
Test  
Condition  
Test  
IR (µA)  
Max  
25  
Condition  
VR (V)  
0.5  
rd ()  
Max  
100  
Condition  
Type  
Grade  
Min  
1.6  
1.7  
1.8  
1.9  
2.0  
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
3.1  
3.2  
3.3  
3.4  
3.5  
3.6  
3.7  
3.8  
3.9  
4.0  
4.1  
4.2  
4.3  
4.4  
4.5  
4.6  
4.7  
4.8  
Max  
IZ (mA)  
IZ (mA)  
HZS2  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
1.8  
1.9  
2.0  
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
3.1  
3.2  
3.3  
3.4  
3.5  
3.6  
3.7  
3.8  
3.9  
4.0  
4.1  
4.2  
4.3  
4.4  
4.5  
4.6  
4.7  
4.8  
4.9  
5.0  
5
5
5
5
5
0.5  
0.5  
100  
100  
5
5
HZS3  
HZS4  
HZS5  
5
5
5
1.0  
100  
5
5
5
1.5  
100  
5
Note: 1. Tested with DC.  
Rev.3.00, Mar.11.2004, page 2 of 6  
HZS Series  
(Ta = 25°C)  
Dynamic Resistance  
Zener Voltage  
VZ (V)*1  
Reverse Current  
Test  
Test  
Condition  
Test  
IR (µA)  
Max  
5
Condition  
VR (V)  
1.5  
rd ()  
Max  
100  
Condition  
Type  
Grade  
Min  
4.9  
Max  
IZ (mA)  
IZ (mA)  
HZS5  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
5.1  
5
5
5.0  
5.2  
5.1  
5.3  
HZS6  
HZS7  
HZS9  
HZS11  
5.2  
5.5  
5
5
5
5
5
1
1
1
2.0  
3.5  
5.0  
7.5  
40  
15  
20  
25  
5
5
5
5
5.3  
5.6  
5.4  
5.7  
5.5  
5.8  
5.6  
5.9  
5.7  
6.0  
5.8  
6.1  
6.0  
6.3  
6.1  
6.4  
6.3  
6.6  
6.4  
6.7  
6.6  
6.9  
6.7  
7.0  
6.9  
7.2  
7.0  
7.3  
7.2  
7.6  
7.3  
7.7  
7.5  
7.9  
7.7  
8.1  
7.9  
8.3  
8.1  
8.5  
8.3  
8.7  
8.5  
8.9  
8.7  
9.1  
8.9  
9.3  
9.1  
9.5  
9.3  
9.7  
9.5  
9.9  
9.7  
10.1  
10.3  
10.6  
10.8  
11.1  
11.3  
11.6  
11.9  
12.1  
12.4  
12.7  
12.9  
13.1  
13.4  
9.9  
10.2  
10.4  
10.7  
10.9  
11.1  
11.4  
11.6  
11.9  
12.2  
12.4  
12.6  
12.9  
HZS12  
5
1
9.5  
35  
5
Note: 1. Tested with DC.  
Rev.3.00, Mar.11.2004, page 3 of 6  
HZS Series  
(Ta = 25°C)  
Dynamic Resistance  
Zener Voltage  
VZ (V)*1  
Reverse Current  
Test  
Test  
Condition  
Test  
IR (µA)  
Max  
1
Condition  
VR (V)  
9.5  
rd ()  
Max  
35  
Condition  
Type  
Grade  
Min  
Max  
IZ (mA)  
IZ (mA)  
HZS12  
C1  
C2  
C3  
1
13.2  
13.5  
13.8  
14.1  
14.5  
14.9  
15.3  
15.7  
16.3  
16.9  
17.5  
18.1  
18.8  
19.5  
20.2  
20.9  
21.6  
22.3  
22.9  
23.6  
24.3  
25.2  
26.2  
27.2  
28.2  
29.2  
30.2  
31.2  
32.2  
33.2  
34.2  
35.3  
36.4  
13.7  
14.0  
14.3  
14.7  
15.1  
15.5  
15.9  
16.5  
17.1  
17.7  
18.3  
19.0  
19.7  
20.4  
21.1  
21.9  
22.6  
23.3  
24.0  
24.7  
25.5  
26.6  
27.6  
28.6  
29.6  
30.6  
31.6  
32.6  
33.6  
34.6  
35.7  
36.8  
38.0  
5
5
HZS15  
HZS16  
HZS18  
HZS20  
HZS22  
HZS24  
HZS27  
HZS30  
HZS33  
HZS36  
5
5
5
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
11.0  
12.0  
13.0  
15.0  
17.0  
19.0  
21.0  
23.0  
25.0  
27.0  
40  
5
5
5
2
2
2
2
2
2
2
2
3
1
45  
2
3
1
55  
2
3
1
60  
2
3
1
65  
2
3
1
70  
2
3
1
80  
2
3
1
100  
120  
140  
2
3
1
2
3
1
2
3
Notes: 1. Tested with DC.  
2. Type No. is as follows; HZS2B1, HZS2B2, HZS36-3.  
Rev.3.00, Mar.11.2004, page 4 of 6  
HZS Series  
Main Characteristic  
10–2  
10–3  
10–4  
10–5  
10–6  
10–7  
10–8  
0
5
10  
15  
20  
25  
30  
35  
40  
Zener Voltage VZ (V)  
Fig.1 Zener current vs. Zener voltage  
0.10  
50  
500  
400  
300  
200  
100  
0
l
%/°C  
0.08  
0.06  
0.04  
0.02  
0
40  
2.5 mm  
3 mm  
30  
Printed circuit board  
100 180 1.6t mm  
Material: paper phenol  
×
×
20  
mV/°C  
10  
l = 5 mm  
0
0.02  
0.04  
0.06  
0.08  
0.10  
10  
20  
30  
40  
50  
l = 10 mm  
(Publication value)  
0
5
10 15 20 25 30 35 40  
0
50  
Ambient Temperature Ta (°C)  
Fig.3 Power Dissipation vs. Ambient Temperature  
100  
150  
200  
Zener Voltage VZ (V)  
Fig.2 Temperature Coefficient vs. Zener voltage  
Rev.3.00, Mar.11.2004, page 5 of 6  
HZS Series  
Package Dimensions  
As of January, 2003  
Unit: mm  
26.0 Min  
26.0 Min  
2.4 Max  
Package Code  
JEDEC  
JEITA  
MHD  
Conforms  
Mass (reference value)  
0.084 g  
Rev.3.00, Mar.11.2004, page 6 of 6  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited.  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom  
Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900  
Renesas Technology Europe GmbH  
Dornacher Str. 3, D-85622 Feldkirchen, Germany  
Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11  
Renesas Technology Hong Kong Ltd.  
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2375-6836  
Renesas Technology Taiwan Co., Ltd.  
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .1.0  
配单直通车
HZS3C1TD-E产品参数
型号:HZS3C1TD-E
Brand Name:Renesas
是否Rohs认证: 符合
生命周期:Obsolete
零件包装代码:DO-34
包装说明:O-LALF-W2
针数:2
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.10.00.50
风险等级:5.63
外壳连接:ISOLATED
配置:SINGLE
二极管元件材料:SILICON
二极管类型:ZENER DIODE
JEDEC-95代码:DO-34
JESD-30 代码:O-LALF-W2
JESD-609代码:e2
湿度敏感等级:1
元件数量:1
端子数量:2
最高工作温度:200 °C
封装主体材料:GLASS
封装形状:ROUND
封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL
最大功率耗散:0.4 W
认证状态:Not Qualified
表面贴装:NO
技术:ZENER
端子面层:Tin/Copper (Sn/Cu)
端子形式:WIRE
端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED
工作测试电流:5 mA
Base Number Matches:1
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