HZU4ALLTRF-E全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

产品型号HZU4ALLTRU的Datasheet PDF文件预览

To all our customers

Regarding the change of names mentioned in the document, such as Hitachi

Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand

names are mentioned in the document, these names have in fact all been changed to Renesas

Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and

corporate statement, no changes whatsoever have been made to the contents of the document, and

these changes do not constitute any alteration to the contents of the document itself.

Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

Cautions

Keep safety first in your circuit designs!

1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better

and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate

measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or

(iii) prevention against any malfunction or mishap.

Notes regarding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas

Technology Corporation product best suited to the customer's application; they do not convey any

license under any intellectual property rights, or any other rights, belonging to Renesas Technology

Corporation or a third party.

2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any

third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or

circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and

algorithms represents information on products at the time of publication of these materials, and are

subject to change by Renesas Technology Corporation without notice due to product improvements or

other reasons. It is therefore recommended that customers contact Renesas Technology Corporation

or an authorized Renesas Technology Corporation product distributor for the latest product information

before purchasing a product listed herein.

The information described here may contain technical inaccuracies or typographical errors.

Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss

rising from these inaccuracies or errors.

Please also pay attention to information published by Renesas Technology Corporation by various

means, including the Renesas Technology Corporation Semiconductor home page

(http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams,

charts, programs, and algorithms, please be sure to evaluate all information as a total system before

making a final decision on the applicability of the information and products. Renesas Technology

Corporation assumes no responsibility for any damage, liability or other loss resulting from the

information contained herein.

5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device

or system that is used under circumstances in which human life is potentially at stake. Please contact

Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor

when considering the use of a product contained herein for any specific purposes, such as apparatus or

systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in

whole or in part these materials.

7. If these products or technologies are subject to the Japanese export control restrictions, they must be

exported under a license from the Japanese government and cannot be imported into a country other

than the approved destination.

Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the

country of destination is prohibited.

8. Please contact Renesas Technology Corporation for further details on these materials or the products

contained therein.

HZU-LL Series

Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise

ADE-208-236C (Z)

Rev.3

Dec. 2002

Features

•

Low noise voltage (approximately 1/3 to 1/10 lower than the HZU series).

Temperature coefficient is approximately 1/2 lower than the HZU series.

Vz-Iz characteristics are semi-logarithmic linear from Iz=1nA to 1mA.

Ultra small Resin Package(URP) is suitable for surface mount design.

Ordering Information

Type No.

Mark

Package Code

HZU-LL Series

Let to Mark Code

URP

Pin Arrangement

Cathode mark

Mark

1. Cathode

2. Anode

HZU-LL Series

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Pd*¹

Value

150

Unit

°C

Power dissipation

Junction temperature

Storage temperature

Note: 1. See Fig.3.

150

Tstg

-55 to +150

°C

Electrical Characteristics

(Ta = 25°C)

Zener Voltage

V_Z(V) *¹

Reverse Current Dynamic Resistance

Linearity

∆V_Z(V) *³

I_R(nA)

I_Z(mA) Max

Z_ZT(Ω)

Max

350

Z_ZK(kΩ) *²

Type

Grade Min

Max

2.0

2.3

2.6

2.9

3.2

3.5

3.8

4.1

4.4

4.7

5.0

5.3

V_R(V)

I_ZT(mA) Typ I_ZK(µA) Max

HZU2LL

1.6

1.9

2.2

2.5

2.8

3.1

3.4

3.7

4.0

4.3

4.6

4.9

0.5

100

0.5

(1.2)

(1.5)

0.5

HZU3LL

HZU4LL

HZU5LL

1.0

2.0

3.0

360

370

380

Notes: 1. Tested with DC.

2. Reference only.

3. ∆V_Z= V_Z(I_Z= 0.5 mA) - V_Z(I_z= 0.05 mA)

4. Type No. is as follows; HZU2ALL, HZU2BLL, … HZU5CLL.

Mark Code

Type

Grade

MarK No.

Type

Grade

Mark No.

HZU2LL

HZU4LL

HZU3LL

HZU5LL

Rev.3, Dec. 2002, page 2 of 2

HZU-LL Series

Main Characteristic

10^–2

10^–3

10^–4

10^–5

10^–6

10^–7

10^–8

0.01

0.02

0.03

0.04

0.05

0.5

%/°C

mV/°C

1.0

1.5

2.0

Zener Voltage V_Z(V)

Fig.1 Zener current vs. Zener voltage

Zener Voltage V_Z(V)

Fig.2 Temperature Coefficient vs. Zener voltage

250

200

150

100

0.8mm

1.5mm

Cu Foil

Printed circuit board

15 20 1.6t mm

Material: Glass Epoxy Resin

+Cu Foil

Ambient Temperature Ta (°C)

Fig.3 Power Dissipation vs. Ambient Temperature

100

150

200

Rev.3, Dec. 2002, page 3 of 3

HZU-LL Series

Package Dimensions

As of July, 2002

Unit: mm

1.7 0.1ꢀ

2.ꢀ 0.1ꢀ

Hitachi Code

JEDEC

JEITA

URP

Conforms

—

Mass (reference value)

0.004 g

Rev.3, Dec. 2002, page 4 of 4

HZU-LL Series

Disclaimer

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Sales Offices

Hitachi, Ltd.

Semiconductor & Integrated Circuits

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: (03) 3270-2111 Fax: (03) 3270-5109

URL

http://www.hitachisemiconductor.com/

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe Ltd.

Hitachi Asia Ltd.

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower

Electronic Components Group

Hitachi Tower

179 East Tasman Drive Whitebrook Park

16 Collyer Quay #20-00

Singapore 049318

Tel : <65>-6538-6533/6538-8577

Fax : <65>-6538-6933/6538-3877

URL : http://semiconductor.hitachi.com.sg

San Jose,CA 95134

Lower Cookham Road

World Finance Centre,

Tel: <1> (408) 433-1990 Maidenhead

Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Harbour City, Canton Road

Tsim Sha Tsui, Kowloon Hong Kong

Tel : <852>-2735-9218

Fax : <852>-2730-0281

URL : http://semiconductor.hitachi.com.hk

Fax: <44> (1628) 778322

Hitachi Asia Ltd.

(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road

Hung-Kuo Building

Taipei (105), Taiwan

Hitachi Europe GmbH

Electronic Components Group

Dornacher Str 3

D-85622 Feldkirchen

Postfach 201, D-85619 Feldkirchen

Germany

Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

URL : http://semiconductor.hitachi.com.tw

Colophon 7.0

Rev.3, Dec. 2002, page 5 of 5

型号:	HZU4ALLTRF-E
Brand Name：	Renesas
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Obsolete
零件包装代码：	URP
包装说明：	R-PDSO-G2
针数：	2
制造商包装代码：	PTSP0002ZA-A2
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.50
Factory Lead Time：	1 week
风险等级：	5.64
其他特性：	LOW NOISE
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	ZENER DIODE
最大动态阻抗：	370 Ω
JESD-30 代码：	R-PDSO-G2
JESD-609代码：	e6
湿度敏感等级：	1
元件数量：	1
端子数量：	2
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL
最大功率耗散：	0.15 W
认证状态：	Not Qualified
标称参考电压：	3.6 V
子类别：	Voltage Reference Diodes
表面贴装：	YES
技术：	ZENER
端子面层：	TIN BISMUTH
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
工作测试电流：	0.5 mA
Base Number Matches：	1

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