Rev 2: Nov 2004
AO3416, AO3416L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3416 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. AO3416L ( Green
Product ) is offered in a lead-free package.
Features
V
DS
(V) = 20V
I
D
= 6.5 A
R
DS(ON)
< 22mΩ (V
GS
= 4.5V)
R
DS(ON)
< 26mΩ (V
GS
= 2.5V)
R
DS(ON)
< 34mΩ (V
GS
= 1.8V)
ESD Rating: 2000V HBM
TO-236
(SOT-23)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
20
±8
6.5
5.2
30
1.4
0.9
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
65
85
43
Max
90
125
60
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
ETC [ ETC ]
