EE-SX1018
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
Photomicrosensor
(Through-beam)
Features
•
•
•
Compact model with a 2-mm-wide slot.
PCB mounting type.
High resolution with a 0.5-mm-wide slit.
Four, C0.3
0.5±0.05
Absolute Maximum Ratings
(Ta = 25°C)
Item
Emitter
Forward current
Pulse forward
current
Symbol
I
F
I
FP
V
R
V
CEO
V
ECO
Rated
value
50 mA
(see note 1)
1A
(see note 2)
4V
30 V
---
20 mA
100 mW
(see note 1)
–25°C to
85°C
–30°C to
100°C
260°C
Optical
axis
Four, 0.5
Four, 0.25
Reverse voltage
Receiver
Cross section AA
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
I
C
Internal Circuit
K
C
Collector
dissipation
Unless otherwise specified, the
tolerances are as shown below.
Ambient
temperature
Operating
Storage
Soldering temperature
Note:
P
C
Topr
Tstg
Tsol
A
E
Dimensions
3 mm max.
3
t
mm
v
6
6
t
mm
v
10
10
t
mm
v
18
18
t
mm
v
30
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
1. Refer to the temperature rating chart if the ambient
temperature exceeds 25°C.
2. The pulse width is 10
µs
maximum with a frequency
of 100 Hz.
3. Complete soldering within 10 seconds.
Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Forward voltage
Reverse current
Peak emission wavelength
Receiver
Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Rising time
Falling time
I
R
λ
P
I
L
I
D
I
LEAK
V
CE
(sat)
λ
P
tr
tf
Symbol
V
F
Value
1.2 V typ., 1.5 V max.
0.01
µA
typ., 10
µA
max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
850 nm typ.
4
µs
typ.
4
µs
typ.
I
F
= 30 mA
V
R
= 4 V
I
F
= 20 mA
I
F
= 20 mA, V
CE
= 10 V
V
CE
= 10 V, 0 x
---
I
F
= 20 mA, I
L
= 0.1 mA
V
CE
= 10 V
V
CC
= 5 V, R
L
= 100
Ω,
I
L
= 5 mA
V
CC
= 5 V, R
L
= 100
Ω,
I
L
= 5 mA
Condition
38
ETC [ ETC ]
