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MBR10100CT 参数 Datasheet PDF下载

MBR10100CT图片预览
型号: MBR10100CT
PDF下载: 下载PDF文件 查看货源
内容描述: 10安培HT功率肖特基整流器100伏特至200Volts [10 Amp HT Power Schottky Barrier Rectifier 100 Volts to 200Volts]
分类和应用: 二极管瞄准线功效
文件页数/大小: 1 页 / 212 K
品牌: ETC [ ETC ]
   
LTO-DMS
MBR10100CT thru MBR10200CT
10 Amp HT Power Schottky Barrier Rectifier
100 Volts to 200Volts
Features
* High Junction Temperature Capability
* Low Leakage Current and Low Forward Voltage Drop
* Low Power Loss and High Efficiency
Maximum Ratings
* Operating Junction Temperature: 150°C
* Storage Temperature: - 55 °C to +175°C
* Per diode Thermal Resistance 2.2°C/W Junction to Case
Mechanical Data
* Case: Molded Plastic
* Terminals: Plated Lead Solderable per
MIL-STD-202, Method 208
* Marking:Type Number
* Weight: 2.24 grams (approx)
LTO-DMS Semiconductor Corporatin
1468, 86th Street, Brooklyn
New York, 11228, USA
Tel: (718) 234 6010 / (707) 3223 4679
Fax:(718) 234 6013 / (707) 3223 6696
TO-220AB
DIMENSIONS
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
INCHES
MIN
0.570
0.380
0.100
0.235
0.335
0.110
0.500
0.095
0.025
0.016
0.142
0.160
0.045
0.102 typ
MAX
0.620.
0.405
0.120
0.255
0.365
0.155
0.562
0.105
0.035
0.025
0.147
0.190
0.055
MM
MIN
14.4
9.66
2.54
5.97
8.51
2.80
12.7
2.42
0.64
0.41
3.61
4.06
1.14
2.6 typ
MAX
15.75
10.28
3.04
6.48
9.27
3.93
14.27
2.66
0.89
0.64
3.37
4.82
1.39
NOTE
Symbol
Characteristics
MBR10100CT
MBR10150CT
MBR10200CT
Unit
V
RRM
V
RM
V
R(RMS)
V
F
I
F(AV)
I
FSM
dv/dt
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum RMS Voltage
Maximum Forward Voltage (Note 1)
I
F
=10A @T
J
=25°C
Average Forward Current
8.3ms Single Half-Sine-Wave
Peak Forward Surge Current
Voltage Rate Of Change (Rated V
R
)
Maximum
DC
at
Reverse
DC
T
J
=25°C
T
J
=125°C
100
100
70
0.85
150
150
105
200
200
140
0.95
V
V
V
V
A
A
V/us
10
150
10000
0.2
40
2.0
170
-55to+150
-55to+175
I
R
R
thJC
C
J
T
J
T
STG
Current
Rated
mA
°C/ W
pF
°C
°C
Blocking Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Revision: 1
2002/06/17