JTDB 75
75 Watts, 36 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The JTDB 75 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input and output prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
2
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
220 Watts
55 Volts
3.5 Volts
8.0 Amps
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
η
c
VSWR
BVebo
BVces
h
FE
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 960-1215 MHz
Vcc = 36 Volts
PW = 10
µsec
DF = 40%
F = 1090 MHz
Ie = 30mA
Ic = 30 mA
Ic = 25 mA, Vce = 5 V
MIN
75
15
7.0
7.5
40
3:1
TYP
MAX
UNITS
Watts
Watts
dB
%
θ
jc
2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
3.5
55
10
0.8
Volts
Volts
o
C/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Issue A, July 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
ETC [ ETC ]
