TN0200T/TS
N-Channel Enhancement-Mode MOSFET
Product Summary
I
D
(A)
V
DS
(V)
20
TO-236
(SOT-23)
Top View
G
1
3
0.73
0.65
1.2
1.1
S
2
D
TN0200T (N0)*
TN0200TS (NS)*
*Marking Code for TO-236
r
DS(on)
(W)
0.4 @ V
GS
= 4.5 V
0.5 @ V
GS
= 2.5 V
TN0200T
TN0200TS
Features
D
D
D
D
D
Low On-Resistance: 0.29
W
Low Threshold: 0.9 V (typ)
2.5-V or Lower Operation
Fast Switching Speed: 22 ns
Low Input and Output Leakage
Benefits
D
D
D
D
D
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Low Error Voltage
Low Battery Voltage Operation
Applications
D
D
D
D
D
Direct Logic-Level Interfact: TTL/CMOS
Dirvers: Relays, Solenoids, Lamps, Hammers
Battery Operated Systems, DC/DC Converters
Solid-State Relays
Load/Power Switching–Cell Phones, Pagers
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
b
Power Dissipation
b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
TN0200T
20
"8
0.73
0.58
4
0.6
0.35
0.22
TN0200TS
c
20
"8
1.2
1.0
4
1.0
1.0
0.65
Unit
V
A
W
_C
–55 to 150
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
b
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t
v
10 sec.
c. Copper lead frame.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70202.
A SPICE Model data sheet is available for this product (FaxBack document #70560).
Symbol
R
thJA
TN0200T
357
TN0200TS
c
125
Unit
_C/W
Siliconix
S-52426—Rev. B, 14-Apr-97
1
ETC [ ETC ]
