SPEC SHEET
2N5294
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Dimension
Scribe Line Width
Top Metal
Back Metal
Raper Size
Absolute Max Ratings (Ta=25°C)
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Loss (Power Dissipation)
Junction Temperature
Storage Temperature
Electrical Characteristics (Ta=25°C)
Item
Symbol
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector Saturation
Probing Spec (Ta=25°C)
No.
Mode
Min.
1
2
3
4
5
6
7
V BE
B V CEO
I CBO
I EBO
I CEO
h FE
V CE(SAT)
-
70
-
-
-
30
-
B V CBO
B V CEO
B V EBO
I CBO
I EBO
h FE
V CE(SAT)
Base
Emitter
1.9mm x 1.9mm
230 ± 20µm
665µm x 315µm
555 µm x 325 µm
50µm
Al
Ti-Ni-Ag
4 inch
(TO-220)
Symbol
V CBO
V CEO
V EBO
IC
PC
Tj
T stg
Max Ratings
80
70
7
4
36
-65 to +150
Unit
V
V
V
mA
W
°C
°C
(TO-220)
Min.
80
70
7
-
-
30
-
Typ.
-
-
-
-
-
-
-
Max.
-
-
-
-
1
120
1
Unit
V
V
V
µA
mA
-
V
Condition
I
C
= 100 µA
I
C
= 200 mA
I
E
= 100 µA
VCB = V
VEB = 7V
VCE = 4 V, IC = 500mA
IC = 500mA, IB = 50mA
Note
Limit
Max.
-
-
-
1
-
120
1
Condition
Unit
V
V
µA
mA
µA
-
V
IB=
I C = 200mA
V CB = V
V EB = 7V
V CE = V
V CE = 4 V, I C = 500A
I C = 500mA, I B = 50mA
ETC [ ETC ]
